JPH04142037A - Correction method of chipped-off part at conductor - Google Patents

Correction method of chipped-off part at conductor

Info

Publication number
JPH04142037A
JPH04142037A JP26466290A JP26466290A JPH04142037A JP H04142037 A JPH04142037 A JP H04142037A JP 26466290 A JP26466290 A JP 26466290A JP 26466290 A JP26466290 A JP 26466290A JP H04142037 A JPH04142037 A JP H04142037A
Authority
JP
Japan
Prior art keywords
conductor
substrate
film
repair
correction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP26466290A
Other languages
Japanese (ja)
Other versions
JP2556615B2 (en
Inventor
Toshihiko Takakura
敏彦 高倉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP2264662A priority Critical patent/JP2556615B2/en
Publication of JPH04142037A publication Critical patent/JPH04142037A/en
Application granted granted Critical
Publication of JP2556615B2 publication Critical patent/JP2556615B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To enhance a conductive property between conductors and to enhance a close contact property between a conductor for correction and a substrate by a method wherein the conductor for correction and an existing conductor as a film on the substrate are irradiated with a laser and they are melted in a short time and partially. CONSTITUTION:A substrate 10 where a chipped-off part 14 is caused at an Al conductor 12 formed as a film is coated with a photoresist 16; the substrate 10 is exposed to light and developed; an opening part is formed; the chipped-off part 14 is revealed. Then, an Al conductor 18 for correction is formed as a film on the revealed chipped-off part 14. The Al conductor 18 for correction use and the existing Al conductor 12 as the film on the substrate are irradiated with a laser and melted. After that, the inessential conductor for correction and the photoresist are removed. Thereby, an oxide film between the Al conductor 18 for correction and the Al conductor 12 is eliminated, and a good continuity state and a good contact force are obtained. Also a discontinuous face at a microslit is melted. As a result, the discontious Al conductor is obtained, and a close contact property with a substratum at the chipped-off part 14 not provided with the Al conductor 12 is improved.

Description

【発明の詳細な説明】 [産業上の利用分野コ 本発明は導体欠損部の修正方法に係り、特に修正用導体
と既存の基板上成膜導体との導通性に優れた修正方法に
関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for repairing a defective portion of a conductor, and more particularly to a method for repairing a defective portion of a conductor, and particularly to a method for repairing a defective portion of a conductor, which has excellent conductivity between a conductor for repair and a conductor formed on an existing substrate.

〔従来の技術] 従来、大型の基板上に薄膜抵抗体、A1導体、及び保護
膜(耐酸化膜、耐磨耗膜)等から成る回路を形成し、例
えばサーマルヘッド等を作成する製造方法か知られてい
る。この様な製造方法においは、回路の欠損が避けられ
ず、修正を必要とする場合が多々発生する。
[Prior Art] Conventionally, there has been a manufacturing method in which a circuit consisting of a thin film resistor, an A1 conductor, a protective film (oxidation resistant film, abrasion resistant film), etc. is formed on a large substrate to create, for example, a thermal head. Are known. In such a manufacturing method, defects in the circuit are unavoidable, and corrections are often required.

第3図は従来の導体欠損部の修正方法を示す工程図であ
る。
FIG. 3 is a process diagram showing a conventional method for correcting conductor defects.

第3図(a)はサーマルヘッドの断面図を示し、基板1
0上に薄膜抵抗体あるいはAI!導体等の導体、ここで
はA1導体12か成膜パターン形成されている。AI!
導体12は、図示のように欠損部14か発生している。
FIG. 3(a) shows a cross-sectional view of the thermal head, with the substrate 1
Thin film resistor or AI on 0! A conductor such as a conductor, in this case an A1 conductor 12, is formed in a film pattern. AI!
The conductor 12 has a defect 14 as shown in the figure.

修正工程は、まず第3図(b)に示すように、基板全面
にフォトレジスト16を塗布することから始める。次に
、第3図(C)に示すように、露光現像を行い、フォト
レジスト16に開口部を設け、欠損部14を露出させる
。続いて、第3図(d)に示すように、基板の全面に修
正用A1導体18を成膜する。そして、欠損部14以外
のフォトレジスト16上の修正用Af導体18を剥離し
く第3図(e)参照)、さらにフォトレジスト16をも
剥離する(第3図(f)参照)。こうして、A1導体1
2の欠損を修正していた。
The repair process begins by coating the entire surface of the substrate with a photoresist 16, as shown in FIG. 3(b). Next, as shown in FIG. 3(C), exposure and development is performed to provide an opening in the photoresist 16 and expose the defective part 14. Subsequently, as shown in FIG. 3(d), a repair A1 conductor 18 is formed over the entire surface of the substrate. Then, the repairing Af conductor 18 on the photoresist 16 other than the defective portion 14 is peeled off (see FIG. 3(e)), and the photoresist 16 is also peeled off (see FIG. 3(f)). In this way, A1 conductor 1
2 deficiencies were corrected.

[発明か解決しようとする課題] しかしなから、従来の導体欠損部の修正方法によれば、
以下のような欠点かあった。
[Problem to be solved by the invention] However, according to the conventional method for repairing conductor defects,
There were some drawbacks as follows.

■既存の基板上Af導体12の表面には成膜後、酸化膜
か自然形成されるため、Aノ導体12と修正用A、12
導体18との導通性が不良となり、リード抵抗か高(な
ってしまう。
■Since an oxide film is naturally formed on the surface of the Af conductor 12 on the existing substrate after film formation, the A conductor 12 and the repair A, 12
The conductivity with the conductor 18 becomes poor, resulting in high lead resistance.

■修正用Al導体18は、フォトレジスト16の特性上
、成膜温度の上限か制限されているため、基板10ある
いはA)導体12に対する密着性か悪く剥れ易い。
(2) The repairing Al conductor 18 has a limited upper limit of film forming temperature due to the characteristics of the photoresist 16, so it has poor adhesion to the substrate 10 or A) conductor 12 and is likely to peel off.

■A、!!導体12の端部ては、修正用Ai導体18の
膜の回り込みが悪く、AI導体12と修正用A1導体1
8との間に隙間(マイクロスリット)か発生し、導体間
の導通性か不良となる。
■A,! ! At the end of the conductor 12, the film of the repairing A1 conductor 18 does not wrap around well, and the AI conductor 12 and the repairing A1 conductor 1
A gap (micro slit) is generated between the conductors and the conductor, resulting in poor conductivity between the conductors.

本発明は、上記課題を解決するためになされたものであ
り、その目的は、導通性、密着性、及び修復性に優れた
導体欠損部の修正方法を提供することにある。
The present invention has been made to solve the above problems, and its purpose is to provide a method for repairing a defective conductor portion with excellent conductivity, adhesion, and repairability.

[課題を解決するための手段] 上記目的を達成するために本発明に係る導体欠損部の修
正方法は、成膜された導体に欠損部が発生した基板上に
フォトレジストを塗布する工程と、この基板に露光現象
を行なうことにより前記フォトレジストに開口部を設け
欠損部分を露出させる露光現象工程と、露出された欠損
部分に修正用導体を成膜する修正工程と、を含み、基板
上に成膜された導体の欠損部分を修正する導体欠損部の
修正方法において、前記修正用導体と既存の基板上成膜
導体とをレーザ照射により溶融させる溶融工程と、溶融
後、不要な修正用導体とフォトレジストを除去する除去
工程と、を含むことを特徴とする。
[Means for Solving the Problems] In order to achieve the above object, a method for repairing a conductor defect according to the present invention includes a step of applying a photoresist on a substrate in which a defect occurs in a formed conductor; The steps include an exposure phenomenon step in which an opening is formed in the photoresist and a defective portion is exposed by performing an exposure phenomenon on the substrate, and a repair step in which a repair conductor is formed as a film on the exposed defective portion. In a method for repairing a defective part of a conductor that has been formed into a film, the repairing conductor and the existing film-formed conductor on the substrate are melted by laser irradiation, and after melting, the unnecessary repairing conductor is removed. and a removing step of removing the photoresist.

[作用] 上記構成を有する本発明の導体欠損部の修正方法におい
ては、修正用導体と既存の基板上成膜導体とをレーザ照
射により、短時間及び部分的に溶融させることで、導体
間の導通性に優れ、修正用導体と基板との密着性を向上
させることができる。
[Function] In the method for repairing a conductor defect of the present invention having the above-mentioned configuration, the repair conductor and the existing film-formed conductor on the substrate are melted briefly and partially by laser irradiation, thereby reducing the gap between the conductors. It has excellent conductivity and can improve the adhesion between the correction conductor and the substrate.

[実施例] 以下、図面に基づいて本発明の詳細な説明する。[Example] Hereinafter, the present invention will be explained in detail based on the drawings.

第1図は本発明に係る導体欠損部の修正方法の一実施例
を示す工程図である。なお、第3図と同一部分には同一
の符号を付しである。
FIG. 1 is a process diagram showing an embodiment of a method for repairing a conductor defect according to the present invention. Note that the same parts as in FIG. 3 are given the same reference numerals.

ます、第1図(a)に示すように、抵抗体、A1導体1
2等の成膜、パターン形成後に、電気的特性(導通性)
を測定し、導体欠損部14が発生している基板10を検
出する。
First, as shown in Figure 1(a), a resistor, A1 conductor 1
After forming the second layer and forming the pattern, electrical properties (conductivity)
is measured, and the substrate 10 in which the conductor defective portion 14 has occurred is detected.

次に、第1図(b)に示すように、前記基板10の全面
に例えばポジ型フォトレジスト16を塗布する。
Next, as shown in FIG. 1(b), for example, a positive photoresist 16 is applied to the entire surface of the substrate 10.

続いて、第1図(c)に示すように、欠損部14を露光
し現像することにより、A!導体12か欠損している部
分を露出させる。このとき、修正により接続させるべき
Aノ導体12の端部を両側共に露出させる。
Subsequently, as shown in FIG. 1(c), by exposing and developing the defective portion 14, A! The missing portion of the conductor 12 is exposed. At this time, the ends of the A conductor 12 to be connected are exposed on both sides by modification.

次に、第1図(d)に示すように、露出された欠損部1
4を含む基板上に修正用A1導体18を成膜する。
Next, as shown in FIG. 1(d), the exposed defect 1
A repair A1 conductor 18 is formed on the substrate including A1.

続いて、第1図(e)に示すように、修正用A、12導
体18と既存の基板上成膜Aノ導体12とをレーザ照射
により溶融させる。第2図はレーザ照射部分を示す基板
平面図である。図中、斜線にて示すようにレーザ照射部
分20は、例えばスリットによりスポット径10口〜2
00口μm程度、A1導体12の1/3幅程度に設定さ
れる。このレーザ照射により、修正用A、4導体18と
A1導体12とが2層に重なっている部分、そしてマイ
クロスリットか発生し易いA1導体12の端部、さらに
基板10に接する修正用AI導体18か確実に溶融され
る。
Subsequently, as shown in FIG. 1(e), the repair A, 12 conductor 18 and the A conductor 12 formed on the existing substrate are melted by laser irradiation. FIG. 2 is a plan view of the substrate showing the laser irradiated portion. As shown by diagonal lines in the figure, the laser irradiation portion 20 is formed by, for example, a slit with a spot diameter of 10 to 2 mm.
The width of the conductor 12 is approximately 1/3 of the width of the A1 conductor 12. By this laser irradiation, the portion where the repair A, 4 conductor 18 and the A1 conductor 12 overlap in two layers, the end of the A1 conductor 12 where micro-slits are likely to occur, and the repair AI conductor 18 that is in contact with the substrate 10. or it will definitely be melted.

このため、修正用A1導体18とAJ!導体12の層間
の酸化皮膜が無くなり、良好な導通状態と密着力が得ら
れる。また、マイクロスリットの不連続面も溶融させて
しまう為、連続したA、f77層か得られる。さらに、
Aノ導体12のなかった欠損部14の下地とも密着性が
良くなる。
For this reason, the correction A1 conductor 18 and the AJ! There is no oxide film between the layers of the conductor 12, resulting in good conduction and adhesion. Furthermore, since the discontinuous surfaces of the microslits are also melted, continuous A and f77 layers can be obtained. moreover,
Adhesion is also improved to the base of the defective portion 14 where the A conductor 12 was not present.

なお、レーザの照射時間はμsec程度とし、そのパワ
ーはA1導体か溶融し、全てか飛散してしまわない程度
とされる。
Note that the laser irradiation time is about μsec, and the power is set to such an extent that the A1 conductor is melted and not all of it is scattered.

次に、第1図(e)に示す余分な修正用A1導体18を
例えば剥離用粘着テープで除去する。そして、フォトレ
ジスト16を剥離液にて除去する。
Next, the excess correction A1 conductor 18 shown in FIG. 1(e) is removed using, for example, a peeling adhesive tape. Then, the photoresist 16 is removed using a stripping solution.

なお、余分な修正用Aで導体は、レーザ照射時の金属蒸
気のマスキング材となっている。また、欠損部14の修
正用A1導体18は、溶融して下地と密着している為、
余分な修正用AI導体と同時に剥れてしまう事はない。
Note that the extra conductor for correction serves as a masking material for metal vapor during laser irradiation. In addition, since the A1 conductor 18 for repairing the defective part 14 is melted and in close contact with the base,
It will not peel off at the same time as the extra repair AI conductor.

さらに、レーザ照射条件により、余分な修正用A1導体
を切断することも可能である。
Furthermore, depending on the laser irradiation conditions, it is also possible to cut off the excess A1 conductor for correction.

上記レーザ照射によって修正用A1導体18は、溶融し
て確実にAノ導体12と結合しており、欠損の無かった
AI導体12に対して良好な導通状態か得られる。この
ため、レーザ照射時に照射状態をモニターする事により
、外観上から導通の可否が判断できる。この事から、修
正出来たか否かを、抵抗値(導通性)で確認する必要か
なく、そのまま、後工程に流す事かできる。
By the laser irradiation, the repairing A1 conductor 18 is melted and reliably connected to the A1 conductor 12, and a good electrical conduction state is obtained with respect to the AI conductor 12 which has no defects. Therefore, by monitoring the irradiation state during laser irradiation, it is possible to determine whether conduction is possible or not based on the appearance. From this, it is not necessary to check by the resistance value (conductivity) whether the correction has been made or not, and it can be passed on to the subsequent process as is.

上記のような本発明の修正方法は、例えばサマルヘッド
を製作するときの回路欠損部の修正に特に有効である。
The repair method of the present invention as described above is particularly effective for repairing circuit defects when manufacturing a thermal head, for example.

サーマルヘッドは、発熱体とつながる例えばAJ導体の
抵抗値か低く、ドラツキの小さい方が好ましい。この導
体の抵抗値変化か、そのサーマルヘッドの抵抗値特性、
すなわち印字品位に影響する。従って、サーマルヘッド
において、高品質の印字を目的とする場合、当然そのサ
ーマルヘッドの抵抗値のバラツキは、できるたけ小さい
方か印字品質も向上する。この様な導体抵抗値のバラツ
キは、本発明の修正方法を用いることにより小さくする
ことが可能であり、本発明は、抵抗値のバラツキを小さ
くしたい回路の修正に特に有効である。
In the thermal head, it is preferable that, for example, the AJ conductor connected to the heating element has a low resistance value and a small drag. The resistance value change of this conductor, the resistance value characteristic of the thermal head,
In other words, it affects printing quality. Therefore, when high-quality printing is aimed at with a thermal head, it is natural that the variation in resistance value of the thermal head should be minimized to improve printing quality. Such variations in conductor resistance values can be reduced by using the modification method of the present invention, and the present invention is particularly effective in modifying circuits in which it is desired to reduce variations in resistance values.

なお、以上説明した実施例では修正用導体か既存の基板
上成膜導体と同一材質(実施例中はA、12)である場
合を例示したが、本発明は上記実施例に限定されるもの
ではなく、異なる材質の修正用導体を用いても良い。
In addition, in the embodiments described above, the case where the repair conductor is made of the same material as the existing film-formed conductor on the substrate (A, 12 in the embodiments) is illustrated, but the present invention is limited to the above embodiments. Instead, a correction conductor made of a different material may be used.

[発明の効果コ 以上説明したように、本発明の導体欠損部の修正方法に
よれば、基板上成膜導体と修正用導体とかレーザによっ
て溶融する事により、連続した導体となる為、欠損のな
い導体と同等の信頼性か得られ、かつ、リード抵抗も、
同等の値か得られる。
[Effects of the Invention] As explained above, according to the method for repairing a conductor defect according to the present invention, the conductor film formed on the substrate and the conductor for repair are melted by a laser to form a continuous conductor. Reliability equivalent to non-conductor conductors can be obtained, and lead resistance is also reduced.
An equivalent value can be obtained.

また、余分な修正用導体を剥す以前に、レーザ処理を行
なう為、熱蒸気による汚染が無く、保護膜等の密着力の
低下も招かない。
Furthermore, since laser treatment is performed before removing the excess correction conductor, there is no contamination by hot steam and no reduction in the adhesion of the protective film or the like.

さらに、確実な導体間の溶融接続かできる為、修正前に
導体の表面酸化状態の確認、及び、その酸化膜の除去を
行なわなくて良く修正用導体の成膜条件も密着力かある
程度得られれば良く成膜条件か簡易になる。
Furthermore, since a reliable fusion connection can be made between the conductors, there is no need to check the surface oxidation state of the conductor or remove the oxide film before repair, and the film formation conditions for the repair conductor can be maintained to a certain degree with adhesion. The better, the film forming conditions will be simpler.

また、確実に導体欠損不良を良品とてきる為、繰り返し
修正と廃棄が無くなり、修正効率か向上する。
In addition, since defective conductors are reliably identified as non-defective products, repeated repairs and disposal are eliminated, improving repair efficiency.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(a)〜(f)は本発明に係る導体欠損部の修正
方法の一実施例を示す工程図、第2図はレーザ照射時分
を示す基板平面図、第3図(a)〜(f)は従来の導体
欠損部の修正方法を示す工程図である。 基板 AJ!導体 欠損部 フォトレジスト 修正用A、+2導体 レーザ照射部分
FIGS. 1(a) to (f) are process diagrams showing one embodiment of the method for repairing conductor defects according to the present invention, FIG. 2 is a plan view of the substrate showing laser irradiation time, and FIG. 3(a) -(f) are process diagrams showing a conventional method for correcting conductor defects. Board AJ! A, +2 conductor laser irradiation area for photoresist repair of conductor defects

Claims (3)

【特許請求の範囲】[Claims] (1)成膜された導体に欠損部が発生した基板上にフォ
トレジストを塗布する工程と、 この基板に露光現象を行なうことにより前記フォトレジ
ストに開口部を設け欠損部を露出させる露光現象工程と
、 露出された欠損部に修正用導体を成膜する修正工程と、
を含み、基板上に成膜された導体の欠損部を修正する導
体欠損部の修正方法において、前記修正用導体と既存の
基板上成膜導体とをレーザ照射により溶融させる溶融工
程と、 溶融後、不要な修正用導体とフォトレジストを除去する
除去工程と、を含むことを特徴とする導体欠損部の修正
方法。
(1) A process of applying a photoresist onto a substrate in which a defect has occurred in the conductor that has been formed, and an exposure phenomenon process of exposing the defect by creating an opening in the photoresist by performing an exposure phenomenon on this substrate. and a repair process of depositing a repair conductor on the exposed defective part.
A method for repairing a defective part of a conductor formed on a substrate, comprising: a melting step of melting the repair conductor and the existing film-formed conductor on the substrate by laser irradiation; and after melting. A method for repairing a defective conductor, the method comprising: a removing step of removing an unnecessary repair conductor and photoresist.
(2)請求項(1)記載の修正方法において、修正用導
体と既存の基板上成膜導体は同一材質であることを特徴
とする導体欠損部の修正方法。
(2) A method for repairing a defective conductor portion according to claim (1), wherein the repair conductor and the existing film-formed conductor on the substrate are made of the same material.
(3)請求項(1)記載の修正方法において、修正用導
体と既存の基板上成膜導体は異なる材質であることを特
徴とする導体欠損部の修正方法。
(3) A method for repairing a defective conductor portion according to claim (1), wherein the repair conductor and the existing film-formed conductor on the substrate are made of different materials.
JP2264662A 1990-10-01 1990-10-01 How to repair a conductor defect Expired - Fee Related JP2556615B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2264662A JP2556615B2 (en) 1990-10-01 1990-10-01 How to repair a conductor defect

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2264662A JP2556615B2 (en) 1990-10-01 1990-10-01 How to repair a conductor defect

Publications (2)

Publication Number Publication Date
JPH04142037A true JPH04142037A (en) 1992-05-15
JP2556615B2 JP2556615B2 (en) 1996-11-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2264662A Expired - Fee Related JP2556615B2 (en) 1990-10-01 1990-10-01 How to repair a conductor defect

Country Status (1)

Country Link
JP (1) JP2556615B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007048877A (en) * 2005-07-15 2007-02-22 V Technology Co Ltd Method and device for repairing wiring pattern of electronic circuit board

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53116790A (en) * 1977-03-22 1978-10-12 Mitsubishi Electric Corp Electrical connection method within semiconductor chip
JPH0266545A (en) * 1988-08-31 1990-03-06 Hoya Corp Method for correcting deficient or defective part of thin film pattern

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53116790A (en) * 1977-03-22 1978-10-12 Mitsubishi Electric Corp Electrical connection method within semiconductor chip
JPH0266545A (en) * 1988-08-31 1990-03-06 Hoya Corp Method for correcting deficient or defective part of thin film pattern

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007048877A (en) * 2005-07-15 2007-02-22 V Technology Co Ltd Method and device for repairing wiring pattern of electronic circuit board
JP4701036B2 (en) * 2005-07-15 2011-06-15 株式会社ブイ・テクノロジー Wiring pattern repair method and wiring pattern repair device for electronic circuit board

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