JPH0413102A - Reflecting mirror for synchrotron radiation light - Google Patents
Reflecting mirror for synchrotron radiation lightInfo
- Publication number
- JPH0413102A JPH0413102A JP11735490A JP11735490A JPH0413102A JP H0413102 A JPH0413102 A JP H0413102A JP 11735490 A JP11735490 A JP 11735490A JP 11735490 A JP11735490 A JP 11735490A JP H0413102 A JPH0413102 A JP H0413102A
- Authority
- JP
- Japan
- Prior art keywords
- base material
- film
- sic
- heat resistant
- holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005469 synchrotron radiation Effects 0.000 title claims description 24
- 239000000463 material Substances 0.000 claims abstract description 37
- 238000001816 cooling Methods 0.000 claims abstract description 14
- 239000000919 ceramic Substances 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052799 carbon Inorganic materials 0.000 abstract description 3
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000005498 polishing Methods 0.000 description 4
- 239000000498 cooling water Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Landscapes
- Optical Elements Other Than Lenses (AREA)
- Laminated Bodies (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明はシンクロトロン放射光用反射ミラーに関する。[Detailed description of the invention] [Field of application of the invention] The present invention relates to a reflection mirror for synchrotron radiation.
近年、シンクロトロン放射光（ＳＯＲ）の応用研究が急
速な進歩を遂げている。その応用分野は、半導体製造、
医学、化学及び物理と広範囲にわたっている。また、Ｓ
ＯＲ装置の大型化、高エネルギー化も著しくなってきて
いる。この結果、ＳＯＲ用の反射ミラーに対する要求も
ますます厳しくなってきている。この用途の反射ミラー
には、耐熱性セラミック基材にＣＶＤ法によりＳｉＣＭ
をコーティングしてその表面を光学研磨し、更に金属膜
を蒸着したものが用いられている。In recent years, applied research on synchrotron radiation (SOR) has made rapid progress. Its application fields include semiconductor manufacturing,
It covers a wide range of fields including medicine, chemistry, and physics. Also, S
OR devices are becoming larger and more energy efficient. As a result, requirements for SOR reflecting mirrors are becoming increasingly strict. The reflective mirror for this purpose is made of SiCM made by CVD method on a heat-resistant ceramic base material.
The surface is optically polished, and a metal film is further deposited on the surface.
従来、耐熱性セラミック基材としては、カーボン基材又
はＳｉＣ基材が用いられている。Conventionally, a carbon base material or a SiC base material has been used as a heat-resistant ceramic base material.
しかし、ＳＯＲ装置の高エネルギー化により反射ミラー
の受ける熱負荷が大きくなるのに伴い、熱衝撃が主な原
因となって生じるＳｉＣ膜の剥離、金属膜の変形が問題
になってきている。However, as the thermal load on the reflecting mirror increases due to the increase in the energy of SOR devices, peeling of the SiC film and deformation of the metal film, which are mainly caused by thermal shock, have become problems.
本発明はこれらの問題を解決するためになされたもので
あり、強制冷却によりＳｉＣ膜の剥離や金属膜の変形が
生じにくいシンクロトロン放射光用反射ミラーを提供す
ることを目的とする。The present invention has been made to solve these problems, and an object of the present invention is to provide a reflection mirror for synchrotron radiation that is unlikely to cause peeling of the SiC film or deformation of the metal film due to forced cooling.
本発明のシンクロトロン放射光用反射ミラーは、耐熱性
セラミック基材にＣＶＤ法によりＳｉＣ膜をコーティン
グしてその表面を光学研磨し、更に金属膜を蒸着したシ
ンクロトロン放射光用反射ミラーにおいて、前記耐熱性
セラミック基材に強制冷却用の溝又は貫通孔を設けたこ
とを特徴とするものである。The reflection mirror for synchrotron radiation of the present invention is a reflection mirror for synchrotron radiation, in which a heat-resistant ceramic base material is coated with a SiC film by the CVD method, the surface thereof is optically polished, and a metal film is further deposited. It is characterized by having grooves or through holes for forced cooling in the heat-resistant ceramic base material.
本発明において、耐熱性セラミック基材としてはカーボ
ン基材、ＳｉＣ基材などを用いることができる。ただし
、ＳｉＣ基材の方がＳｉＣ膜との熱膨張係数が差が小さ
いので好ましい。In the present invention, a carbon base material, a SiC base material, etc. can be used as the heat-resistant ceramic base material. However, the SiC base material is preferable because it has a smaller difference in thermal expansion coefficient from the SiC film.
本発明において、金属膜としては、例えばＣｒ下地層の
上にｐｔ又はＡｕを形成したものが挙げられる。また、
特定波長のＸ線を反射するために、ｐｔ又はＡｕの代わ
りに、Ｎｉ、Ｃｏ、Ｃｕ。In the present invention, examples of the metal film include one in which PT or Au is formed on a Cr underlayer. Also,
Ni, Co, Cu instead of PT or Au to reflect X-rays of specific wavelengths.
Ｆｅ、ＲｅＳＺｎＳＷＳＭｎｚ Ｔａｓ Ａｕなどの重
元素とＢｅ、、Ｍｇ、Ｓｎ、５ｂＳＶＳＴｅなどの軽元
素とを組み合わせた多層膜を用いてもよい。A multilayer film may be used in which a heavy element such as Fe, ReSZnSWSMnz Tas Au is combined with a light element such as Be, Mg, Sn, or 5bSVSTe.
なお、Ｃｒ下地層は必ずしも設ける必要はない。Note that it is not necessary to provide the Cr underlayer.
本発明のシンクロトロン放射光用反射ミラーは、耐熱性
セラミック基材に強制冷却用の溝又は貫通孔を設けてい
るので、ＳＯＲ＠置の高エネルギー化により反射ミラー
の受ける熱負荷が大きくなっても、ＳｉＣ膜の剥離、金
属膜の変形を有効に防止することができる。The reflection mirror for synchrotron radiation of the present invention has grooves or through holes for forced cooling in the heat-resistant ceramic base material, so that the heat load on the reflection mirror increases due to the high energy of SOR@ placement. Also, peeling of the SiC film and deformation of the metal film can be effectively prevented.
以下、本発明の実施例を図面を参照して説明する。 Embodiments of the present invention will be described below with reference to the drawings.
実施例１ 第１図（ａ）及び（ｂ）に示すように、長さ１２ｃｍ。Example 1 As shown in FIGS. 1(a) and (b), the length is 12 cm.
幅１０ｃ＋ｎｓ厚さ２ 、５ｃｍのＳｉＣからなる基材
１の裏面には強制冷却用の溝４が形成されている。また
基材１の反射面側には、ＣＶＤ法により膜厚的１００−
のＳｉＣ膜２、及びイオンブレーティング法によりＣｒ
下地層とＰｔとからなる膜厚０．１１の金属膜３が順次
形成されてＳＯＲ用反射ミラーが構成されている。Grooves 4 for forced cooling are formed on the back surface of a base material 1 made of SiC with a width of 10 c+ns and a thickness of 2 cm and 5 cm. Furthermore, on the reflective surface side of the base material 1, a film with a thickness of 100-
SiC film 2 of
A metal film 3 having a thickness of 0.11 and consisting of a base layer and Pt is successively formed to constitute an SOR reflecting mirror.
この場合、基材１の裏面の表面積が、反射面の表面積（
本実施例では１２０ａｎ２）の１．２〜４．０倍となる
ように、溝４を形成することが望ましい。In this case, the surface area of the back surface of the base material 1 is the surface area of the reflective surface (
In this embodiment, it is desirable to form the groove 4 so that the width is 1.2 to 4.0 times 120an2).
このＳＯＲ用反射ミラーは、第２図に示すように、固定
盤ｌＯ上に載せられ、溝４が開口している側面にフラン
ジ１１を取り付けられ、冷却水が流される。冷却水は基
材１の裏面に設けられた満４の内部を通過するので、基
材１は有効に冷却される。As shown in FIG. 2, this SOR reflecting mirror is placed on a stationary plate 1O, a flange 11 is attached to the side surface where the groove 4 is open, and cooling water is flowed therethrough. Since the cooling water passes through the inside of the tube provided on the back surface of the base material 1, the base material 1 is effectively cooled.
なお、基材の強度を保持しつつ、裏面の表面積を大きく
するためには、第３図（ａ）及び（ｂ）に示すように、
湾曲した形状の溝４を設けることが望ましい。In addition, in order to increase the surface area of the back side while maintaining the strength of the base material, as shown in FIGS. 3(a) and (b),
It is desirable to provide the groove 4 with a curved shape.
実施例２ 第４図（ａ）及び（ｂ）に示すように、長さ１２ｃｍ。Example 2 As shown in FIGS. 4(a) and (b), the length is 12 cm.
幅１０ ｃｍ ｓ厚さ２．５国のＳｉＣからなる基材１
には強制冷却用の貫通孔５が形成されている。貫通孔５
はミラーの短辺に沿った方向に複数個設けられている。Base material 1 made of SiC with a width of 10 cm and a thickness of 2.5 mm.
A through hole 5 for forced cooling is formed in. Through hole 5
A plurality of are provided in the direction along the short side of the mirror.
これらの貫通孔５は、側面の開口部から中心側に向かっ
て徐々に径が小さくなる（テーパー形状）とともに、反
射面側へ傾斜して反射面に近づくように形成されている
。また、基材１の反射面側には、ＣＶＤ法により膜厚的
１００１のＳｉＣ膜２、及びイオンブレーティング法に
よりＣｒ下地層とＰｔとからなる膜厚的０．１．の金属
膜４が順次形成されてＳＯＲ用反射ミラーが構成されて
いる。These through-holes 5 are formed so that the diameter gradually decreases from the side opening toward the center (tapered shape) and is inclined toward the reflective surface so as to approach the reflective surface. Further, on the reflective surface side of the base material 1, a SiC film 2 with a thickness of 1001 mm was formed by CVD, and a 0.1 mm thick film made of a Cr underlayer and Pt was formed by ion blating. The metal films 4 are sequentially formed to constitute an SOR reflecting mirror.
基材１の貫通孔５の開口部にはねじ山が切られ、ジヨイ
ントが取り付けられる。このジヨイントに図示しない冷
却管が接続されて冷却水が流され、基材１が有効に冷却
される。A thread is cut into the opening of the through hole 5 of the base material 1, and a joint is attached thereto. A cooling pipe (not shown) is connected to this joint, through which cooling water flows, and the base material 1 is effectively cooled.
貫通孔の孔径、及び貫通孔の数を種々変化させ、貫通孔
５の内面の表面積と、反射面の面積（本実施例では１２
０ｃｍ２）との比が異なる複数にＳＯＲ用反射ミラーを
作製した。The diameter of the through-hole and the number of through-holes are varied, and the surface area of the inner surface of the through-hole 5 and the area of the reflective surface (in this example, 12
A plurality of SOR reflecting mirrors having different ratios to 0 cm2) were fabricated.
各反射ミラーをＳＯＲ装置に装着し、以下のようにして
耐用寿命を調べた。すなわち、硬Ｘ線ウィグラ（２０極
、２．４ｍ）を用い、３ Ｗ ／ ｍｍ ２の表面パワ
ー密度で６０秒間照射して熱負荷を与える操作を繰り返
し、基材とＳｉＣ膜との剥離が生じた回数を調べた。そ
して、基材に貫通孔を設けていない場合の回数を１００
として、耐用寿命を相対値で表示した。その結果を第１
表に示す。Each reflective mirror was attached to an SOR device, and its service life was examined as follows. That is, using a hard X-ray wiggler (20 poles, 2.4 m), repeated irradiation for 60 seconds at a surface power density of 3 W/mm2 to apply heat load caused peeling between the base material and the SiC film. I checked the number of times. Then, the number of times when the through hole is not provided in the base material is 100.
The service life is expressed as a relative value. The result is the first
Shown in the table.
第
表
第１表の結果から、貫通孔は以下の要件を満たすことが
望ましいことかわかった。From the results shown in Table 1, it was found that it is desirable that the through holes satisfy the following requirements.
■貫通孔５の径は基材１の厚みの１／２以下とする。(2) The diameter of the through hole 5 should be 1/2 or less of the thickness of the base material 1.
■貫通孔５の内面の表面積は、反射面の面積の０．６５
〜２．００倍とする。０，６５倍未満ては冷却効果が小
さい。２，００倍を超えると、基材の強度が著しく低下
する。■The surface area of the inner surface of the through hole 5 is 0.65 of the area of the reflective surface.
~2.00 times. If it is less than 0.65 times, the cooling effect is small. When it exceeds 2,00 times, the strength of the base material decreases significantly.
本実施例では、第４図に示すように、中心部で反射面側
へ傾斜して反射面に近づくように形成された貫通孔５を
設けた。貫通孔は、第５図に示すように反射面に平行な
もの、又は第６図に示すように中心部で裏面側へ傾斜し
て裏面に近づくように形成されたものでもよいが、これ
らは第４図のものと比較して若干冷却効果が劣る。In this embodiment, as shown in FIG. 4, a through hole 5 is provided which is formed at the center so as to be inclined toward the reflective surface and approach the reflective surface. The through hole may be formed parallel to the reflective surface as shown in FIG. 5, or may be formed in the center so as to be inclined toward the back surface and approach the back surface as shown in FIG. The cooling effect is slightly inferior to that shown in Fig. 4.
なお、実施例１．２のいずれの場合でも、ＣＶＤ法によ
るＳｉＣ膜をコーティング、溝又は貫通孔の加工、Ｓｉ
Ｃ膜の研磨の各工程の順序を考慮する必要がある。In any case of Example 1.2, the SiC film is coated by the CVD method, the grooves or through holes are formed, and the Si
It is necessary to consider the order of each step of polishing the C film.
すなわち、ＣＶＤ法によりＳｉＣ膜をコーティングし満
又は貫通孔を加工した後にＳｉＣ膜を研磨すると、Ｓｉ
Ｃ膜に蓄えられた応力が緩和され、研磨品が変形する。In other words, if the SiC film is coated by the CVD method and the SiC film is polished after forming full or through holes, the Si
The stress accumulated in the C film is relaxed and the polished product is deformed.
また、ＣＶＤ法によりＳｉＣ膜をコーティングしＳｉＣ
膜を研磨した後に溝又は貫通孔を加工しても、同様に変
形が生じる。In addition, by coating a SiC film using the CVD method,
Similarly, deformation occurs when grooves or through holes are machined after polishing the membrane.
これに対して、■ＣＶＤ法により膜厚４００〜５００１
のＳｉＣ膜をコーティングする、■溝又は貫通孔を加工
するとともに、ＳｉＣ膜を粗研磨する、■ＣＶＤ法ニヨ
り膜厚１００〜１５０ａ（７）Ｓ ｉ Ｃ膜をコーティ
ングする、■ＳｉＣ膜を仕上げ研磨する、という工程を
採用すれば、ＳｉＣ膜の変形を抑制することができる。On the other hand, ■CVD method has a film thickness of 400 to 5001 mm.
■ Machining grooves or through holes and rough polishing the SiC film, ■ Coating the CVD film with a thickness of 100 to 150 a (7) SiC film, ■ Finishing the SiC film By employing the step of polishing, deformation of the SiC film can be suppressed.
以上詳述したように本発明のシンクロトロン放射光用反
射ミラーは、強制冷却によって熱負荷による変形を抑制
することができるので、長期間にわたって使用すること
ができ、ＳＯＲ装置の高エネルギー化に対応することが
できる。As detailed above, the reflection mirror for synchrotron radiation of the present invention can suppress deformation due to thermal load through forced cooling, so it can be used for a long period of time and is compatible with higher energy SOR devices. can do.
第１図（ａ）は本発明の実施例１におけるシンクロトロ
ン放射光用反射ミラーの正面図、同図（ｂ）は同側面図
、第２図は同反射ミラーの使用状態を示す側面図、第３
図（ａ）は本発明の他の実施例におけるシンクロトロン
放射光用反射ミラーの正面図、同図（ｂ）は同側面図、
第４図（ａ＞は本発明の実施例２におけるシンクロトロ
ン放射光用反射ミラーの正面図、同図（ｂ）は同側面図
、第５図及び第６図はそれぞれ本発明の他の実施例にお
けるシンクロトロン放射光用反射ミラーの側面図である
。
１・・・基材、２・・・ＳｉＣ膜、３・・・金属膜、４
・・・溝、５・・・貫通孔、ｌＯ・・・固定盤、１１・
・・フランジ。
出願人代理人 弁理士 鈴江武彦
４溝
第
図
第
図
５貫通孔FIG. 1(a) is a front view of a reflection mirror for synchrotron radiation in Example 1 of the present invention, FIG. 1(b) is a side view of the same, and FIG. Third
Figure (a) is a front view of a reflection mirror for synchrotron radiation in another embodiment of the present invention, Figure (b) is a side view of the same,
FIG. 4(a) is a front view of a reflection mirror for synchrotron radiation in Example 2 of the present invention, FIG. 4(b) is a side view of the same, and FIGS. 5 and 6 are respectively other embodiments of the present invention. It is a side view of a reflection mirror for synchrotron radiation light in an example. 1... Base material, 2... SiC film, 3... Metal film, 4
...Groove, 5...Through hole, lO...Fixed plate, 11.
...Flange. Applicant's representative Patent attorney Takehiko Suzue 4 grooves Figure 5 Through hole
Claims (1)
ティングしてその表面を光学研磨し、更に金属膜を蒸着
したシンクロトロン放射光用反射ミラーにおいて、前記
耐熱性セラミック基材に強制冷却用の溝又は貫通孔を設
けたことを特徴とするシンクロトロン放射光用反射ミラ
ー。In a reflective mirror for synchrotron radiation, in which a heat-resistant ceramic base material is coated with a SiC film by CVD, its surface is optically polished, and a metal film is further deposited, the heat-resistant ceramic base material is provided with forced cooling grooves or A reflecting mirror for synchrotron radiation, characterized by having a through hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2117354A JP2522584B2 (en) | 1990-05-07 | 1990-05-07 | Synchrotron radiation mirror |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2117354A JP2522584B2 (en) | 1990-05-07 | 1990-05-07 | Synchrotron radiation mirror |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0413102A true JPH0413102A (en) | 1992-01-17 |
| JP2522584B2 JP2522584B2 (en) | 1996-08-07 |
Family
ID=14709615
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2117354A Expired - Fee Related JP2522584B2 (en) | 1990-05-07 | 1990-05-07 | Synchrotron radiation mirror |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2522584B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006046078A1 (en) * | 2004-09-21 | 2006-05-04 | Bae Systems Plc | Heat dissipating layers in de formable mirrors |
| US7397900B2 (en) | 2000-09-27 | 2008-07-08 | Euratom | Micro beam collimator for high resolution XRD investigations with conventional diffractometers |
-
1990
- 1990-05-07 JP JP2117354A patent/JP2522584B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7397900B2 (en) | 2000-09-27 | 2008-07-08 | Euratom | Micro beam collimator for high resolution XRD investigations with conventional diffractometers |
| WO2006046078A1 (en) * | 2004-09-21 | 2006-05-04 | Bae Systems Plc | Heat dissipating layers in de formable mirrors |
| US7832879B2 (en) | 2004-09-21 | 2010-11-16 | Bae Systems Plc | Heat dissipating layers in deformable mirrors |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2522584B2 (en) | 1996-08-07 |
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