JPH04129493U - surge absorption element - Google Patents
surge absorption elementInfo
- Publication number
- JPH04129493U JPH04129493U JP4507491U JP4507491U JPH04129493U JP H04129493 U JPH04129493 U JP H04129493U JP 4507491 U JP4507491 U JP 4507491U JP 4507491 U JP4507491 U JP 4507491U JP H04129493 U JPH04129493 U JP H04129493U
- Authority
- JP
- Japan
- Prior art keywords
- discharge
- surge
- surge absorption
- insulating substrate
- voltage
- Prior art date
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- 238000010521 absorption reaction Methods 0.000 title abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 description 10
- 238000010891 electric arc Methods 0.000 description 6
- 239000011195 cermet Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- 235000008733 Citrus aurantifolia Nutrition 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 235000011941 Tilia x europaea Nutrition 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000005321 cobalt glass Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000004571 lime Substances 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021343 molybdenum disilicide Inorganic materials 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
- Details Of Resistors (AREA)
Abstract
(57)【要約】
【目的】 バリスタとアレスタのそれぞれの長所を兼ね
備えた優れたサージ吸収特性を有するサージ吸収素子に
おいて、外径形状の小型化を図りスペースファクターを
向上させる。
【構成】 放電ガスを封入した放電空間を設けて蓋部材
７により密閉状に被覆される絶縁基板２上に、薄板状の
電圧非直線抵抗体３と、この電圧非直線抵抗体３と電気
的に並列に接続され、放電間隙５，５を隔てて対向する
一対の放電電極膜４，４とを被着形成する。
(57) [Abstract] [Purpose] To improve the space factor by reducing the size of the outer diameter of a surge absorption element that has excellent surge absorption characteristics that combine the advantages of both a varistor and an arrester. [Structure] A thin plate-shaped voltage nonlinear resistor 3 is provided on an insulating substrate 2 which has a discharge space filled with discharge gas and is hermetically covered with a lid member 7, and an electrical connection between the voltage nonlinear resistor 3 and the insulating substrate 2 is provided. A pair of discharge electrode films 4, 4 connected in parallel to each other and facing each other with a discharge gap 5, 5 in between are formed.
Description
【０００１】0001
本考案は、電話回線等に誘起される誘導雷等のサージを吸収して機器が損傷す ることを防止するサージ吸収素子に係り、特に外径形状の小型化を図りスペース ファクターの優れたサージ吸収素子に関する。 This invention absorbs surges such as induced lightning induced in telephone lines, etc., and prevents damage to equipment. Regarding surge absorption elements that prevent This invention relates to a surge absorption element with an excellent factor.
【０００２】0002
従来、電子回路に加わる誘導雷等のサージから電子回路を保護するためのサー ジ吸収素子として、電圧非直線特性を有する高抵抗体素子より成るバリスタや、 放電間隙を気密容器に収容したアレスタ等が広く使用されている。 しかし、上記バリスタは、サージ吸収の応答性に優れるものの、単位断面積当 たりの電流耐量が比較的小さく、したがって大きなサージ電流を効率よく吸収す ることが困難であった。また、上記アレスタは、その放電間隙にアーク放電を生 成することにより電流耐量を大きくすることができるのであるが、サージの印加 からアーク放電までに要する時間が上記バリスタと比較して遅く、その応答性に 問題を有していた。 Conventionally, servers have been used to protect electronic circuits from surges such as induced lightning that are applied to electronic circuits. Varistors made of high resistance elements with voltage non-linear characteristics, Arresters and the like in which the discharge gap is housed in an airtight container are widely used. However, although the above varistors have excellent response in surge absorption, The current withstand capacity is relatively small, so it can absorb large surge currents efficiently. It was difficult to In addition, the above arrester generates arc discharge in its discharge gap. However, it is possible to increase the current withstand capacity by Compared to the varistors mentioned above, the time required for arc discharge from I had a problem.
【０００３】 そこで、バリスタとアレスタのそれぞれの長所を兼ね備えたサージ吸収素子を 得るために、バリスタとアレスタとを組み合わせたサージ吸収素子が本願出願人 により案出されている。このサージ吸収素子は、略円柱状の電圧非直線抵抗体の 両端に、放電間隙を隔てて一対の放電電極を嵌着し、これを放電ガスとともにガ ラス等からなる筒状の気密容器内に封入して外部端子を導出した構造としている 。 このサージ吸収素子にサージが印加された場合、まず電圧非直線抵抗体を通し て微弱なサージ電流（数μＡ乃至１０数μＡ）が流れてサージ吸収が開始され、 上記放電電極間の電圧非直線抵抗体に電圧降下が生ずる。そして、この電圧降下 の値がサージ吸収動作の進展に伴って増大して、放電ガスを封入した放電空間に おける放電電極の放電開始電圧と同一又はそれより大きな値となると、放電電極 における放電間隙にトリガ放電を生ずる。更に、このトリガ放電はアーク放電に 移行し、このアーク放電の大電流を通じてサージを吸収するものである。このよ うに、上述したサージ吸収素子は、静電容量が小さく、応答性に優れ更に電流耐 量が大きいという優れたサージ吸収特性を有するものである。0003 Therefore, we developed a surge absorption element that combines the advantages of both a varistor and an arrester. In order to obtain It has been devised by. This surge absorption element consists of a substantially cylindrical voltage nonlinear resistor. A pair of discharge electrodes is fitted on both ends with a discharge gap separated, and this is connected to the gas along with the discharge gas. It has a structure in which it is enclosed in a cylindrical airtight container made of lath, etc., and external terminals are led out. . When a surge is applied to this surge absorption element, it is first passed through the voltage nonlinear resistor. A weak surge current (several μA to 10-odd μA) flows, and surge absorption begins. A voltage drop occurs in the voltage nonlinear resistor between the discharge electrodes. And this voltage drop The value of increases with the progress of the surge absorption operation, and the value of increases in the discharge space filled with discharge gas. When the discharge starting voltage of the discharge electrode becomes equal to or larger than that of the discharge electrode Trigger discharge occurs in the discharge gap at . Furthermore, this triggered discharge becomes an arc discharge. The surge is absorbed through the large current of this arc discharge. This way The above-mentioned surge absorption element has small capacitance, excellent response, and high current resistance. It has excellent surge absorption characteristics due to its large amount.
【０００４】0004
上述したバリスタとアレスタとを組み合わせた従来のサージ吸収素子にあって は、気密容器が略円筒形状を有し、所謂小型電子部品と比較して決して小型とは いえないことから、各種電子・電気機器内部に実装する際に一定の専有域を必要 としていた。 しかし、近年の電子・電気機器にあっては、著しく小型・軽量化が図られ、こ れにより電子部品もＩＣ等により小型集積化が推し進められ、したがって従来の サージ吸収素子にあっても更に小型化が要求されている。 In the conventional surge absorption element that combines the above-mentioned varistor and arrester, The airtight container has a substantially cylindrical shape, and is by no means small compared to so-called small electronic components. Therefore, a certain amount of exclusive space is required when implementing it inside various electronic and electrical devices. It was. However, in recent years, electronic and electrical equipment has become significantly smaller and lighter. As a result, electronic components are becoming more compact and integrated using ICs, etc., and as a result, the conventional There is also a demand for further miniaturization of surge absorbing elements.
【０００５】 そこで、本考案のサージ吸収素子にあっては、バリスタとアレスタのそれぞれ の長所を兼ね備えた優れたサージ吸収特性を有するとともに、外径形状の小型化 を図りスペースファクターを向上させたサージ吸収素子の実現を目的とする。[0005] Therefore, in the surge absorption element of the present invention, each of the varistor and arrester is It has excellent surge absorption characteristics that combine the advantages of The aim is to realize a surge absorption element with improved space factor.
【０００６】[0006]
上述した目的を達成すべく、本考案のサージ吸収素子は、放電ガスを封入した 放電空間を設けて蓋部材により密閉状に被覆される絶縁基板上に、薄板状の電圧 非直線抵抗体と、該電圧非直線抵抗体と電気的に並列に接続され、放電間隙を隔 てて対向する対の放電電極膜とを被着形成したことを特徴とするものである。 In order to achieve the above-mentioned purpose, the surge absorbing element of the present invention has a surge absorbing element filled with discharge gas. A thin plate of voltage is placed on an insulating substrate that has a discharge space and is hermetically covered by a lid. a non-linear resistor electrically connected in parallel with the voltage non-linear resistor and separated by a discharge gap; It is characterized in that a pair of discharge electrode films facing each other are formed by adhering to the electrodes.
【０００７】[0007]
放電ガスを封入した放電空間を設けて蓋部材により密閉状に被覆される絶縁基 板表面に、薄板状の電圧非直線抵抗体と、この電圧非直線抵抗体と電気的に並列 に接続され、放電間隙を隔てて対向する対の放電電極膜とを被着形成したことに より、本考案のサージ吸収素子はバリスタとアレスタのそれぞれの長所を兼ね備 えた優れたサージ吸収特性を有するとともに、サージ吸収素子の形状は偏平化し 、容易に小型化することができる。 An insulating base that has a discharge space filled with discharge gas and is hermetically covered by a lid member. A thin plate-shaped voltage non-linear resistor is placed on the plate surface, and electrically parallel to this voltage non-linear resistor. A pair of discharge electrode films facing each other across a discharge gap are attached to each other. Therefore, the surge absorption element of this invention combines the advantages of both a varistor and an arrester. In addition to having excellent surge absorption characteristics, the shape of the surge absorption element has been flattened. , can be easily miniaturized.
【０００８】[0008]
図１は、本考案のサージ吸収素子の一実施例を示す分解斜視図、図２は本考案 のサージ吸収素子の他の実施例を示す分解斜視図である。 FIG. 1 is an exploded perspective view showing one embodiment of the surge absorbing element of the present invention, and FIG. FIG. 3 is an exploded perspective view showing another embodiment of the surge absorbing element of FIG.
【０００９】 図中１は、本考案のサージ吸収素子であり、２は厚さ０．４〜１．０ｍｍのセ ラミック、フォルステライト、アルミナ等からなる絶縁基板、２ａ，２ａは絶縁 基板２の相対向する両側端縁から下方に突出して一体形成された脚部、３は絶縁 基板２の表面に被着形成した厚さ約０．５ｍｍの薄板状の電圧非直線抵抗体、４ ，４は電圧非直線抵抗体３の両端部と電気的に接続し、０．４〜３．０ｍｍ程度 の放電間隙５，５を隔てて対向し、モリブデン（Ｍｏ）、タングステン（Ｗ）、 六硼化ランタン（ＬａＢ6）、二ケイ化モリブデン（ＭｏＳｉ2）、二酸化チタン （ＴｉＯ2）等の耐スパッタ性を有する導電物質からなる放電電極膜、６，６は 上記電圧非直線抵抗体３及び放電電極膜４，４から絶縁基板２の脚部２ａ，２ａ にかけて被着形成された銀−パラジウム（Ａｇ−Ｐｄ）やニッケル（Ｎｉ）等か らなる外部端子被膜、７は四方に鍔縁７ａを形成し、ソーダ石灰ガラス、コバル トガラス等のガラスやセラミック等の絶縁物質（本実施例にあってはガラス）か らなる蓋部材である。In the figure, 1 is the surge absorbing element of the present invention, 2 is an insulating substrate made of ceramic, forsterite, alumina, etc. with a thickness of 0.4 to 1.0 mm, and 2a, 2a are the opposite sides of the insulating substrate 2. 3 is a thin plate-shaped voltage non-linear resistor with a thickness of about 0.5 mm formed on the surface of the insulating substrate 2; 4 is a voltage non-linear resistor; It is electrically connected to both ends of the non-linear resistor 3, facing each other with a discharge gap 5, 5 of about 0.4 to 3.0 mm in between, and is made of molybdenum (Mo), tungsten (W), lanthanum hexaboride ( A discharge electrode film made of a conductive material having sputter resistance such as LaB 6 ), molybdenum disilicide (MoSi 2 ), and titanium dioxide (TiO 2 ); 6 and 6 are the voltage nonlinear resistor 3 and the discharge electrode film 4 , 4 to the legs 2a, 2a of the insulating substrate 2. An external terminal coating made of silver-palladium (Ag-Pd), nickel (Ni), etc. is formed on the legs 2a, 2a of the insulating substrate 2. The lid member is made of an insulating material (glass in this embodiment) such as glass such as lime glass or cobalt glass or ceramic.
【００１０】 上記蓋部材７は、３〜１０ｍｍ程度の高さを有し、電圧非直線抵抗体３と放電 電極膜４，４間の放電間隙５，５とを被覆するとともに、鍔縁７ａを絶縁基板２ に図示しない低融点ガラスからなる封着部材により封着して蓋部材７の内方に放 電空間を形成している。そして、この放電空間にヘリウム（Ｈｅ）、ネオン（Ｎ ｅ）、アルゴン（Ａｒ）、キセノン（Ｘｅ）等の希ガスの単体もしくは混合物を 主体とする放電ガスを封入している。尚、上記蓋部材７は平板状のものでもよく 、この場合には、絶縁基板２との間にスペーサ等を配して放電空間を形成すれば よい。0010 The lid member 7 has a height of about 3 to 10 mm, and is connected to the voltage nonlinear resistor 3 and the discharge While covering the discharge gaps 5, 5 between the electrode films 4, 4, the flange 7a is covered with the insulating substrate 2. It is sealed with a sealing member made of low melting point glass (not shown) and released inside the lid member 7. It forms an electric space. Then, in this discharge space, helium (He), neon (N e) Single or mixture of rare gases such as argon (Ar), xenon (Xe), etc. The main discharge gas is sealed. Incidentally, the lid member 7 may be in the form of a flat plate. In this case, if a spacer or the like is placed between the insulating substrate 2 and the discharge space is formed. good.
【００１１】 上記電圧非直線抵抗体３の両端部と外部端子被膜６，６とを接続するためには 、銀ペースト等を用いることが好ましい。[0011] In order to connect both ends of the voltage nonlinear resistor 3 and the external terminal coatings 6, 6, , silver paste, etc. are preferably used.
【００１２】 図２は、本考案のサージ吸収素子１の他の実施例を示す概略斜視図である。こ のサージ吸収素子１は、絶縁基板２の表面に電圧非直線抵抗体３と、０．４〜３ ．０ｍｍ程度の放電間隙５を隔てて対向した放電電極膜４，４とを左右に並設し て並列接続したものである。この実施例にあっては、上述した実施例と放電間隙 ５が一つとなった点が異なるだけで、サージ吸収素子１としての作用及び効果は 何ら変わるところがないものである。0012 FIG. 2 is a schematic perspective view showing another embodiment of the surge absorbing element 1 of the present invention. child The surge absorbing element 1 includes a voltage nonlinear resistor 3 on the surface of an insulating substrate 2, and a voltage nonlinear resistor 3 of 0.4 to 3 ．． Discharge electrode films 4, 4 facing each other with a discharge gap 5 of about 0 mm are arranged side by side on the left and right. They are connected in parallel. In this embodiment, the discharge gap is different from the embodiment described above. The only difference is that 5 is now one, and the function and effect as surge absorbing element 1 are as follows: There is nothing that will change.
【００１３】 図３は、本考案のサージ吸収素子１の更に他の実施例を示す概略平面図であり 、このサージ吸収素子１は、２対の外部端子被膜６1，６1、６2，６2の各対間に 、それぞれ放電電極膜４，４間の続流放電を防止する１〜３Ωの抵抗値を有する ルテニウム等からなるサーメット抵抗８，８を被着形成し、このサーメット抵抗 ８，８における一方端間に電圧非直線抵抗体３と放電電極膜４，４との並列接続 対を接続するとともに、上記サーメット抵抗８，８における他方端間にバリスタ ９を接続し、そしてこれらを蓋部材７で被覆し内方に放電ガスを封入した放電空 間を形成している。これにより、本実施例のサージ吸収素子１は予め続流防止用 のサーメット抵抗８等を組み込んでいるので、２相の電源ライン等にそのまま接 続するだけで容易にサージを吸収することができるものである。FIG. 3 is a schematic plan view showing still another embodiment of the surge absorbing element 1 of the present invention, and this surge absorbing element 1 includes two pairs of external terminal coatings 6 1 , 6 1 , 6 2 , Cermet resistors 8, 8 made of ruthenium or the like having a resistance value of 1 to 3 Ω to prevent follow-on discharge between the discharge electrode films 4, 4 are deposited between each pair of 6 2 , and the cermet resistors 8 , 8 are connected in parallel with a voltage nonlinear resistor 3 and discharge electrode films 4, 4, and a varistor 9 is connected between the other ends of the cermet resistors 8, 8. A discharge space is formed which is covered with a lid member 7 and in which discharge gas is sealed. As a result, the surge absorbing element 1 of this embodiment has the cermet resistor 8 for preventing following current incorporated in advance, so it can easily absorb surges by simply connecting it to a two-phase power line, etc. It is.
【００１４】 然して、上述した如き構成からなるサージ吸収素子１を機器のプリント回路基 板等にチップ部品の如く実装し、外部から外部端子被膜６，６を介して誘導雷等 のサージが印加されると、まず電圧非直線抵抗体３を通して微弱なサージ電流（ 数μＡ乃至１０数μＡ）が流れてサージ吸収が開始され、上記放電電極膜４，４ 間の電圧非直線抵抗体３に電圧降下が生ずる。そして、この電圧降下の値がサー ジ吸収動作の進展に伴って増大して、放電ガスを封入した放電空間における放電 電極膜４，４間の放電開始電圧と同一又はそれより大きな値となると、放電電極 膜４，４間の放電間隙５，５にトリガ放電を生ずる。更に、このトリガ放電はア ーク放電に移行し、このアーク放電の大電流を通じてサージを吸収するものであ る。[0014] However, it is difficult to install the surge absorbing element 1 having the above-mentioned configuration on the printed circuit board of the device. It is mounted like a chip component on a board, etc., and is exposed to induced lightning etc. from the outside via the external terminal coatings 6, 6. When a surge is applied, a weak surge current ( A few μA to 10-odd μA) flows to start surge absorption, and the discharge electrode films 4, 4 A voltage drop occurs across the nonlinear resistor 3 between the voltages. Then, the value of this voltage drop is As the discharge gas absorption progresses, the discharge in the discharge space filled with discharge gas increases. When the voltage becomes equal to or larger than the discharge starting voltage between the electrode films 4, 4, the discharge electrode A triggered discharge occurs in the discharge gap 5,5 between the membranes 4,4. Furthermore, this trigger discharge This process transitions to arc discharge and absorbs the surge through the large current of this arc discharge. Ru.
【００１５】[0015]
以上詳述した如く、本考案のサージ吸収素子によれば、放電空間を設けて蓋部 材により密閉状に被覆される絶縁基板表面に、薄板状の電圧非直線抵抗体と、こ の電圧非直線抵抗体と電気的に並列に接続され、放電間隙を隔てて対向する対の 放電電極膜とを被着形成したことで、バリスタとアレスタのそれぞれの長所を兼 ね備えた優れたサージ吸収特性を有するとともに、サージ吸収素子の形状は偏平 化して小型化することが容易となり、したがって部品収容スペースの少ない小型 の機器内に収容することが可能になる等、サージ吸収素子の使用用途を拡大し、 その利用価値を高めるものである。 As described in detail above, according to the surge absorbing element of the present invention, the discharge space is provided and the lid portion is A thin plate-like voltage nonlinear resistor is placed on the surface of the insulating substrate, which is hermetically covered with a material. A pair of voltage nonlinear resistors electrically connected in parallel and facing each other across a discharge gap. By forming a discharge electrode film, it combines the advantages of both a varistor and an arrester. In addition to having excellent surge absorption characteristics, the surge absorption element has a flat shape. This makes it easier to reduce the size of the Expanding the uses of surge absorption elements, such as making it possible to accommodate them in equipment such as This increases its utility value.
【図１】本考案のサージ吸収素子の一実施例を示す分解
斜視図である。FIG. 1 is an exploded perspective view showing one embodiment of a surge absorbing element of the present invention.
【図２】本考案のサージ吸収素子の他の実施例を示す分
解斜視図である。FIG. 2 is an exploded perspective view showing another embodiment of the surge absorbing element of the present invention.
【図３】本考案のサージ吸収素子の更に他の実施例を示
す概略平面図である。FIG. 3 is a schematic plan view showing still another embodiment of the surge absorbing element of the present invention.
１ サージ吸収素子 ２ 絶縁基板 ３ 電圧非直線抵抗体 ４ 放電電極膜 ５ 放電間隙 ７ 蓋部材 1 Surge absorption element 2 Insulating substrate 3 Voltage nonlinear resistor 4 Discharge electrode film 5 Discharge gap 7 Lid member
Claims (1)
部材により密閉状に被覆される絶縁基板上に、薄板状の
電圧非直線抵抗体と、該電圧非直線抵抗体と電気的に並
列に接続され、放電間隙を隔てて対向する対の放電電極
膜とを被着形成したことを特徴とするサージ吸収素子。1. A thin plate-shaped voltage non-linear resistor is provided on an insulating substrate which has a discharge space filled with discharge gas and is hermetically covered with a lid member, and is electrically parallel to the voltage non-linear resistor. What is claimed is: 1. A surge absorbing element comprising: a pair of discharge electrode films connected to and facing each other across a discharge gap;
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4507491U JPH04129493U (en) | 1991-05-20 | 1991-05-20 | surge absorption element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4507491U JPH04129493U (en) | 1991-05-20 | 1991-05-20 | surge absorption element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04129493U true JPH04129493U (en) | 1992-11-26 |
Family
ID=31925041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4507491U Pending JPH04129493U (en) | 1991-05-20 | 1991-05-20 | surge absorption element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04129493U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013110515A (en) * | 2011-11-18 | 2013-06-06 | Denso Corp | Circuit for driving power semiconductor element |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6410592A (en) * | 1987-07-01 | 1989-01-13 | Okaya Electric Industry Co | Chip type surge absorbing element |
-
1991
- 1991-05-20 JP JP4507491U patent/JPH04129493U/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6410592A (en) * | 1987-07-01 | 1989-01-13 | Okaya Electric Industry Co | Chip type surge absorbing element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013110515A (en) * | 2011-11-18 | 2013-06-06 | Denso Corp | Circuit for driving power semiconductor element |
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