JPH04115793U - Discharge type surge absorber - Google Patents
Discharge type surge absorberInfo
- Publication number
- JPH04115793U JPH04115793U JP2534891U JP2534891U JPH04115793U JP H04115793 U JPH04115793 U JP H04115793U JP 2534891 U JP2534891 U JP 2534891U JP 2534891 U JP2534891 U JP 2534891U JP H04115793 U JPH04115793 U JP H04115793U
- Authority
- JP
- Japan
- Prior art keywords
- discharge
- conductive thin
- thin film
- insulating substrate
- type surge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000006096 absorbing agent Substances 0.000 title claims abstract description 29
- 239000010409 thin film Substances 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000010408 film Substances 0.000 claims abstract description 21
- 238000010521 absorption reaction Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 10
- 239000004020 conductor Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010891 electric arc Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 2
- 239000011195 cermet Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910021343 molybdenum disilicide Inorganic materials 0.000 description 2
- 230000037452 priming Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- ICAKDTKJOYSXGC-UHFFFAOYSA-K lanthanum(iii) chloride Chemical compound Cl[La](Cl)Cl ICAKDTKJOYSXGC-UHFFFAOYSA-K 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Emergency Protection Circuit Devices (AREA)
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】
【目的】 放電型サージ吸収器における外径形状の小型
化を図りスペースファクターを向上させ、続流放電を遮
断するとともに、連続する過大電圧が印加されて放電が
持続状態となった場合に、過電流の通電を遮断して焼損
事故を未然に防止する。
【構成】 放電ガスを封入した放電空間１１を設けて蓋
部材９により密閉状に被覆される絶縁基板２上に、微小
放電間隙４を隔てて対向する対の導電性薄膜３，３と、
この導電性薄膜３，３と電気的に接続され、主放電間隙
６，６を隔てて対向する対の放電電極膜５，５と、上記
導電性薄膜３と放電電極膜５とに直列接続される抵抗体
薄膜７とを被着形成する。上記導電性薄膜３，３の抵抗
値を、連続した過電流が流れたときに絶縁基板２が熱歪
みにより砕裂し得る発熱量を生ずる抵抗値とする。
(57) [Summary] [Purpose] To improve the space factor by reducing the outer diameter of a discharge-type surge absorber and to block follow-on discharge, it can also be used to prevent discharge from continuing when continuous excessive voltage is applied. If this occurs, the overcurrent is cut off to prevent burnout accidents. [Structure] A pair of conductive thin films 3, 3 facing each other with a minute discharge gap 4 interposed on an insulating substrate 2 provided with a discharge space 11 filled with discharge gas and hermetically covered with a lid member 9;
A pair of discharge electrode films 5, 5 which are electrically connected to the conductive thin films 3, 3 and facing each other with a main discharge gap 6, 6 in between, and the conductive thin films 3 and the discharge electrode film 5 are connected in series. A resistor thin film 7 is then deposited. The resistance value of the conductive thin films 3, 3 is set to a value that generates a heat amount that can cause the insulating substrate 2 to fracture due to thermal distortion when a continuous overcurrent flows.
Description
【０００１】0001
本考案は、気密容器内に放電間隙を形成してなる放電型サージ吸収素子に対し 、続流放電を遮断すべく抵抗体を接続した放電型サージ吸収器に係り、特に抵抗 体が接続されていても外径形状の小型化を図ってスペースファクターが優れると ともに、放電型サージ吸収器を流れる連続した過電流を遮断することのできる放 電型サージ吸収器に関する。 The present invention is applicable to a discharge-type surge absorption element formed by forming a discharge gap in an airtight container. , relates to a discharge-type surge absorber that connects a resistor to cut off follow-on discharge, and in particular, a resistor Even if the body is connected, the space factor is excellent due to the miniaturization of the outer diameter shape. Both are discharge type surge absorbers that can interrupt continuous overcurrent flowing through the discharge type surge absorber. Regarding electric type surge absorbers.
【０００２】0002
従来、電子回路に加わる誘導雷等のサージから電子回路を保護するためのサー ジ吸収素子として、電圧非直線特性を有する高抵抗体素子より成るバリスタや、 放電間隙を気密容器に収容したアレスタ等が広く使用されている。 しかし、上記バリスタは、サージ吸収の応答性に優れるものの、単位断面積当 たりの電流耐量が比較的小さく、したがって大きなサージ電流を効率よく吸収す ることが困難であった。また、上記アレスタは、その放電間隙にアーク放電を生 成することにより電流耐量を大きくすることができるのであるが、サージの印加 からアーク放電までに要する時間が上記バリスタと比較して遅く、その応答性に 問題を有していた。 Conventionally, servers have been used to protect electronic circuits from surges such as induced lightning that are applied to electronic circuits. Varistors made of high resistance elements with voltage non-linear characteristics, Arresters and the like in which the discharge gap is housed in an airtight container are widely used. However, although the above varistors have excellent response in surge absorption, The current withstand capacity is relatively small, so it can absorb large surge currents efficiently. It was difficult to In addition, the above arrester generates arc discharge in its discharge gap. However, it is possible to increase the current withstand capacity by Compared to the varistors mentioned above, the time required for arc discharge from I had a problem.
【０００３】 そこで、上記アレスタにおけるサージ吸収の応答性を改善すべく、図３及び図 ４に示す如く、略円柱状の絶縁体２２の表面に導電性薄膜２３を被着させた上で 、この導電性薄膜２３に幅が０．１ｍｍ程度の微小放電間隙２４を周回状に形成 して導電性薄膜２３を分割するとともに、絶縁体２２の両端に主放電間隙２５を 隔てて放電電極２６，２６を嵌着して上記導電性薄膜２３，２３と放電電極２４ ，２４とを接続し、これを放電ガスとともに気密容器２７内に封入して外部端子 ２８，２８を導出したサージ吸収素子２１が提案されている。 この微小放電間隙２４を有するサージ吸収素子２１にサージが印加された場合 、まず微小放電間隙２４を介した導電性薄膜２３，２３間に電位差が生じ、これ により微小放電間隙２４に電子が放出されて沿面放電が発生する。次いで、この 沿面放電に伴って生ずる電子のプライミング効果によってグロー放電へと移行す る。そして、このグロー放電がサージ電流の増加によって主放電間隙２５へと転 移し、アーク放電に移行してサージを吸収するものである。このように、微小放 電間隙２４を有するサージ吸収素子２１は、元来応答速度の速い沿面放電を利用 するものであるため、上記バリスタと比較して略同等の優れた応答性を有すると ともに、電流耐量も大きく優れたものである。0003 Therefore, in order to improve the response of surge absorption in the above arrester, 4, after a conductive thin film 23 is deposited on the surface of a substantially cylindrical insulator 22, , a minute discharge gap 24 with a width of about 0.1 mm is formed in a circumferential manner in this conductive thin film 23. to divide the conductive thin film 23 and create a main discharge gap 25 at both ends of the insulator 22. The conductive thin films 23, 23 and the discharge electrode 24 are fitted with the discharge electrodes 26, 26 separated from each other. , 24 and sealed in an airtight container 27 together with discharge gas to connect external terminals. A surge absorbing element 21 has been proposed in which 28 and 28 are derived. When a surge is applied to the surge absorbing element 21 having this minute discharge gap 24 , first, a potential difference occurs between the conductive thin films 23 and 23 via the minute discharge gap 24, and this As a result, electrons are emitted into the minute discharge gap 24, and creeping discharge occurs. Then this The transition to glow discharge occurs due to the priming effect of electrons that occurs with creeping discharge. Ru. This glow discharge then transfers to the main discharge gap 25 due to the increase in surge current. The surge is then transferred to an arc discharge to absorb the surge. In this way, micro-radiation The surge absorbing element 21 having the electric gap 24 utilizes creeping discharge which originally has a fast response speed. Therefore, it has approximately the same excellent responsiveness as the varistor mentioned above. Both have excellent current resistance.
【０００４】 この従来のサージ吸収素子２１にあっては、図３に示す如く、気密容器２７が 略円筒形状を有し、所謂小型電子部品と比較して決して小型とはいえないことか ら、各種電子・電気機器内部に実装する際に一定程度の専有域を必要としていた 。しかし、近年の電子・電気機器にあっては、著しく小型・軽量化が図られ、こ れにより電子部品もＩＣ等により小型集積化が推し進められ、したがって従来の サージ吸収素子にあっても更に小型化が要求されている。0004 In this conventional surge absorbing element 21, as shown in FIG. It has a roughly cylindrical shape and is by no means small compared to so-called small electronic components. Therefore, a certain amount of exclusive space was required when implementing it inside various electronic and electrical devices. . However, in recent years, electronic and electrical equipment has become significantly smaller and lighter. As a result, electronic components are becoming more compact and integrated using ICs, etc., and as a result, the conventional There is also a demand for further miniaturization of surge absorbing elements.
【０００５】 また、上述した従来のサージ吸収素子にあっては、サージ吸収の際の放電によ り生じたガスイオンが、サージ消滅後も僅かの間ではあるが残留する。そして、 この残留したガスイオンは、放電電圧を低下させる作用を有することから、この 放電電圧の値が電源電圧の値以下となった場合には、サージが消滅して回路に正 常な電源電圧のみが印加されている状態であっても、放電が持続する、いわゆる 続流放電を発生させる。この続流放電は、回路を駆動するために必要な電源電圧 を吸収して、回路の正常な動作を妨げるものである。[0005] In addition, in the conventional surge absorbing element described above, due to discharge during surge absorption, The generated gas ions remain for a short time even after the surge disappears. and, This residual gas ion has the effect of lowering the discharge voltage. When the discharge voltage value becomes lower than the power supply voltage value, the surge disappears and the circuit is restored. The so-called discharge continues even when only the normal power supply voltage is applied. Generates a follow-on discharge. This follow-on discharge reduces the power supply voltage required to drive the circuit. It absorbs energy and interferes with the normal operation of the circuit.
【０００６】 更に、上述した従来のサージ吸収素子２１にあっては、電力線との接触事故や このような事故を想定したＵＬやＣＳＡ等の安全規格による過電圧試験によって 、サージ吸収素子の定格を上回る連続した過大電圧が印加された場合には、主放 電間隙２５に生成するアーク放電による過電流の通電が持続状態となる。更に、 この過電流の持続した通電に伴う発熱によって気密容器が溶融することで、サー ジ吸収素子を実装した回路基板が焼損するに至り、これにより上記過電圧試験に おける合格基準を充足するに至らないが多々あった。また、上述した現象が実際 の使用状態において発生した場合には、火災に至る虞れもある。[0006] Furthermore, in the conventional surge absorbing element 21 described above, contact accidents with power lines and Through overvoltage tests based on safety standards such as UL and CSA that assume such accidents, If a continuous excessive voltage exceeding the rating of the surge absorbing element is applied, the main discharge The overcurrent energization due to the arc discharge generated in the electric gap 25 continues. Furthermore, The airtight container melts due to the heat generated by this continuous overcurrent, causing the The circuit board on which the voltage absorption element was mounted burned out, and as a result, the above overvoltage test was not completed. There were many cases where the passing standards were not met. Also, the above phenomenon is actually If this occurs while in use, there is a risk of a fire.
【０００７】[0007]
そこで、本考案の放電型サージ吸収器にあっては、外径形状の小型化を図りス ペースファクターを向上させるとともに、続流放電を遮断し、また回線事故や過 電圧試験において放電が持続状態となった場合であっても、過電流の通電を遮断 することで焼損事故を未然に防止し、安全規格に適合する安全性の優れた放電型 サージ吸収器の実現を目的とする。 Therefore, in the discharge type surge absorber of the present invention, the outer diameter is made smaller. In addition to improving the pace factor, it also blocks follow-on discharge and prevents line accidents and overloads. Even if discharge continues during a voltage test, overcurrent will be cut off. This prevents burnout accidents and is a highly safe discharge type that meets safety standards. The purpose is to realize a surge absorber.
【０００８】[0008]
上述した目的を達成すべく、本考案の放電型サージ吸収器は、放電ガスを封入 した放電空間を設けて蓋部材により密閉状に被覆される絶縁基板上に、微小放電 間隙を隔てて対向する対の導電性薄膜と、該導電性薄膜と電気的に接続され主放 電間隙を隔てて対向する対の放電電極膜と、上記導電性薄膜と放電電極膜とに直 列接続される抵抗体薄膜とを被着形成したことを特徴とするものである。 また、導電性薄膜の抵抗値を、連続した過電流が流れたときに絶縁基板が熱歪 みにより砕裂し得る発熱量を生ずる抵抗値とすることが好ましい。 In order to achieve the above-mentioned purpose, the discharge type surge absorber of the present invention seals discharge gas. A small discharge space is provided on an insulating substrate that is hermetically covered with a lid member. A pair of conductive thin films facing each other with a gap in between, and a main discharger electrically connected to the conductive thin films. A pair of discharge electrode films facing each other across an electrical gap, and directly connected to the conductive thin film and the discharge electrode film. It is characterized in that a resistor thin film connected in columns is deposited. In addition, the resistance value of the conductive thin film can be changed by thermal distortion of the insulating substrate when a continuous overcurrent flows. It is preferable to set the resistance value to such a value that the amount of heat generation is such that it can be shattered by force.
【０００９】[0009]
放電ガスを封入した放電空間を設けて蓋部材により密閉状に被覆される絶縁基 板表面に、微小放電間隙を隔てて対向する導電性薄膜と、この導電性薄膜と電気 的に接続されるとともに主放電間隙を隔てて対向する放電電極膜と、導電性薄膜 と放電電極膜に接続する抵抗体薄膜とを被着形成することにより、放電型サージ 吸収器の形状は偏平化し、小型化することが容易となる。 また、導電性薄膜と放電電極膜とに、抵抗体薄膜を直列接続したことにより、 サージが消滅して正常な電源電圧のみが印加されている状態において、抵抗体薄 膜が電源電圧を分圧してサージ吸収素子に印加される電圧を放電電圧よりも低下 させ、続流放電を遮断する。 更に、導電性薄膜の抵抗値を、連続した過電流が流れたときに絶縁基板が熱歪 みにより砕裂し得る発熱量を生ずる抵抗値とすれば、放電型サージ吸収素子の定 格を上回る連続した過電流が導電性薄膜を流れた場合、絶縁基板が砕裂して放電 空間内の放電ガスに空気が流入し、これにより放電が消失して過電流を遮断する こととなり、本考案の放電型サージ吸収器の焼損を防止することができる。 An insulating base that has a discharge space filled with discharge gas and is hermetically covered by a lid member. On the surface of the plate, there is a conductive thin film facing each other with a small discharge gap in between, and this conductive thin film and electricity A discharge electrode film and a conductive thin film that are connected to each other and face each other across a main discharge gap. By depositing a resistor thin film connected to the discharge electrode film, the discharge type surge The shape of the absorber becomes flat, making it easier to downsize. In addition, by connecting a resistive thin film in series with the conductive thin film and the discharge electrode film, When the surge has disappeared and only normal power supply voltage is applied, the resistor thin The membrane divides the power supply voltage and lowers the voltage applied to the surge absorption element below the discharge voltage. to cut off follow-on discharge. Furthermore, the resistance value of the conductive thin film can be changed by thermal distortion of the insulating substrate when a continuous overcurrent flows. If the resistance value is the one that generates the amount of heat that can be shattered by If a continuous overcurrent exceeding the rating flows through the conductive thin film, the insulating substrate will shatter and discharge will occur. Air flows into the discharge gas in the space, causing the discharge to disappear and interrupting the overcurrent. Therefore, it is possible to prevent the discharge type surge absorber of the present invention from burning out.
【００１０】0010
図１は、本考案の放電型サージ吸収器を示す分解斜視図、図２は本考案の放電 型サージ吸収器を示す断面図である。 Figure 1 is an exploded perspective view showing the discharge type surge absorber of the present invention, and Figure 2 is the discharge type surge absorber of the present invention. FIG. 3 is a sectional view showing a type surge absorber.
【００１１】 図中１は、本考案の放電型サージ吸収器、２は０．４〜１．０ｍｍの厚さのア ルミナ、フォルステライトなどのセラミック等からなる絶縁基板、２ａ，２ａは 絶縁基板２の相対向する両側端縁に、絶縁基板２の取付面、すなわち絶縁基板２ における回路基板等に取付けられる面に対して略垂直方向に突出して一体形成さ れた脚部、３，３は絶縁基板２の表面に幅１０〜２００μｍの微小放電間隙４を 隔ててルテニウム（Ｒｕ）系ペーストを被着して形成した５〜１００Ωの抵抗値 を有するサーメット抵抗等の導電性薄膜、５，５は導電性薄膜３，３のそれぞれ の端部と電気的に接続し、０．４〜３．０ｍｍ程度の主放電間隙６，６を隔てて 対向し、モリブデン（Ｍｏ）、タングステン（Ｗ）、六硼化ランタン（ＬａＢ6 ）、二ケイ化モリブデン（ＭｏＳｉ2）、二酸化チタン（ＴｉＯ2）等の耐スパッ タ性を有する導電特質からなる放電電極膜、７，７は一端を導電性薄膜３と放電 電極膜５の両端に直列接続したルテニウム（Ｒｕ）系ペーストを被着して形成し た１〜２０Ωの抵抗値を有するサーメット抵抗等の抵抗体薄膜、８，８は上記抵 抗体薄膜７の他端から絶縁基板２の脚部２ａ，２ａにかけて被着形成された銀− パラジウム（Ａｇ−Ｐｄ）やニッケル（Ｎｉ）等からなる外部接続用被膜、９， ９は上記導電性薄膜３，３の露出部分を被覆することで、この露出部分における 沿面放電を防止するための非結晶化ガラス等からなる保護膜、１０は四方に鍔縁 １０ａを形成し、ガラスやセラミック等の絶縁物質（本実施例にあってはガラス ）からなる蓋部材、１１は蓋部材１０を絶縁基板２表面に密閉状に封着するため の低融点ガラスからなる封着部材である。In the figure, 1 is a discharge type surge absorber of the present invention, 2 is an insulating substrate made of ceramic such as alumina or forsterite, and has a thickness of 0.4 to 1.0 mm, and 2a and 2a are insulating substrates 2. Legs 3, 3 are integrally formed on opposing edges of both sides of the insulating substrate 2, projecting substantially perpendicularly to the mounting surface of the insulating substrate 2, that is, the surface of the insulating substrate 2 to be mounted to a circuit board, etc. A conductive thin film such as a cermet resistor having a resistance value of 5 to 100 Ω is formed by depositing a ruthenium (Ru) paste on the surface of 2 with a micro discharge gap 4 having a width of 10 to 200 μm. electrically connected to the respective ends of the electrostatic thin films 3, 3, facing each other with a main discharge gap 6, 6 of about 0.4 to 3.0 mm in between, and containing molybdenum (Mo), tungsten (W), A discharge electrode film made of a conductive material having sputtering resistance such as lanthanum chloride (LaB 6 ), molybdenum disilicide (MoSi 2 ), titanium dioxide (TiO 2 ), etc., 7, 7 has one end connected to the conductive thin film 3 and the discharge electrode. A resistor thin film such as a cermet resistor having a resistance value of 1 to 20 Ω is formed by depositing a ruthenium (Ru)-based paste connected in series on both ends of the film 5, and 8, 8 is connected from the other end of the resistor thin film 7. An external connection coating made of silver-palladium (Ag-Pd), nickel (Ni), etc. is formed over the legs 2a, 2a of the insulating substrate 2, and 9, 9 are exposed portions of the conductive thin films 3, 3. A protective film 10 made of amorphous glass or the like is used to prevent creeping discharge in the exposed portion. 11 is a sealing member made of low melting point glass for sealing the lid member 10 to the surface of the insulating substrate 2 in a hermetically sealed manner.
【００１２】 上記蓋部材１０は、３〜１０ｍｍ程度の高さを有し、導電性薄膜３，３間の微 小放電間隙４と放電電極膜５，５間の主放電間隙６，６とを被覆するとともに、 鍔縁１０ａを絶縁基板２に封着することにより蓋部材１０の内方に放電空間１２ を形成している。そして、この放電空間１２にヘリウム（Ｈｅ）、ネオン（Ｎｅ ）、アルゴン（Ａｒ）、キセノン（Ｘｅ）等の希ガスの単体もしくは混合物を主 体とする放電ガスを封入している。尚、上記蓋部材１０は平板状のものでもよく 、この場合には、絶縁基板２との間にスペーサ等を配して放電空間１２を形成す ればよい。0012 The lid member 10 has a height of about 3 to 10 mm, and has a height of about 3 to 10 mm, and has a height of about 3 to 10 mm. While covering the small discharge gap 4 and the main discharge gap 6, 6 between the discharge electrode films 5, 5, By sealing the flange 10a to the insulating substrate 2, a discharge space 12 is created inside the lid member 10. is formed. Then, in this discharge space 12, helium (He), neon (Ne) ), argon (Ar), xenon (Xe), and other rare gases alone or in mixtures. It is filled with discharge gas. Incidentally, the lid member 10 may be in the form of a flat plate. In this case, a spacer or the like is placed between the insulating substrate 2 and the discharge space 12. That's fine.
【００１３】 上記蓋部材１０における鍔縁１０ａの底面部分は、抵抗体薄膜７，７の表面を 密着して被覆することで、サージ吸収時における抵抗体薄膜７，７の発熱を伝導 して放散し、これにより抵抗体薄膜７，７の温度上昇を抑制して耐サージ性を向 上させる。[0013] The bottom surface portion of the flange 10a of the lid member 10 touches the surface of the resistor thin films 7, 7. By closely covering it, the heat generated by the resistor thin films 7, 7 during surge absorption is conducted. This suppresses the temperature rise of the resistor thin films 7, 7 and improves surge resistance. let it go up
【００１４】 また、上記導電性薄膜３，３における微小放電間隙４と対向する部分には、放 電電極膜５，５と同様のモリブデン（Ｍｏ）、タングステン（Ｗ）、六硼化ラン タン（ＬａＢ6）、二ケイ化モリブデン（ＭｏＳｉ2）、二酸化チタン（ＴｉＯ2 ）等の耐スパッタ性を有する導電物質１３，１３を被着形成している。これによ り、導電性薄膜３，３のスパッタによる微小放電間隙４の絶縁劣化を防止し、寿 命特性の向上を図っている。勿論、上記導電性薄膜３，３に導電物質１３，１３ を被着形成しない放電型サージ吸収器であっても、サージ吸収特性そのものは変 わることはない。Further, in the portions of the conductive thin films 3, 3 facing the minute discharge gap 4, molybdenum (Mo), tungsten (W), lanthanum hexaboride (LaB 6 ) similar to the discharge electrode films 5, 5 are used. ), molybdenum disilicide (MoSi 2 ), titanium dioxide (TiO 2 ), and other conductive materials 13 having sputter resistance are deposited. This prevents insulation deterioration of the minute discharge gap 4 due to sputtering of the conductive thin films 3, 3, and improves life characteristics. Of course, even in the case of a discharge type surge absorber in which the conductive material 13, 13 is not deposited on the conductive thin films 3, 3, the surge absorption characteristics themselves do not change.
【００１５】 然して、上述した如き構成からなる放電型サージ吸収器１において、機器のプ リント回路基板等に実装された状態で外部から外部接続用被膜８，８を通じて誘 導雷等のサージが印加されると、まず微小放電間隙４を介した導電物質１３，１ ３間に電位差が生じ、これにより微小放電間隙４に電子が放出されて沿面放電が 発生する。次いで、この沿面放電は、放電に伴って生ずる電子のプライミング効 果によってグロー放電へと移行する。そして、このグロー放電がサージ電流の増 加によって主放電間隙６へと転移し、更にアーク放電に移行してサージを吸収す るものである。[0015] However, in the discharge type surge absorber 1 having the configuration as described above, the When mounted on a lint circuit board, etc., external connection films 8, 8 are used to induce external connections. When a surge such as a conductor lightning is applied, the conductive material 13, 1 first passes through the minute discharge gap 4. A potential difference is generated between 3, which causes electrons to be emitted into the minute discharge gap 4, causing a creeping discharge. Occur. Next, this creeping discharge is caused by the priming effect of electrons that occurs with the discharge. Depending on the result, it will transition to glow discharge. This glow discharge causes an increase in surge current. As a result of the application, it transfers to the main discharge gap 6 and further transitions to arc discharge to absorb the surge. It is something that
【００１６】 また、本考案の放電型サージ吸収器１において、電力線との接触事故やこのよ うな事態を想定した過電圧試験によって、放電型サージ吸収素子の定格を上回る 連続した過大電圧が印加された場合には、微小放電間隙４における放電は主放電 間隙６に転移せず、微小放電間隙４または微小放電間隙４および主放電間隙６で 放電が持続し、この放電を通じて連続した過電流が流れることとなる。そして、 このような短絡状態となった場合には、導電性薄膜３，３がその抵抗値によって 発熱し、絶縁基板２に熱歪みが生じて砕裂し、これにより放電空間１２内の放電 ガスに空気が流入して放電を消失させ、その結果過電流を遮断するものである。 更に、本考案の放電型サージ吸収器１にあっては、絶縁基板２における相対向す る両側端縁に脚部２ａ，２ａを形成しているので、脚部２ａ，２ａを回路基板等 に接続する際に所謂チップ型電子部品の如く，絶縁基板２全体が回路基板等に密 着状態で支持されることなく、絶縁基板２の中心部分が回路基板等から浮いた状 態で実装され、これにより導電性薄膜３，３が絶縁基板２を砕裂し得る発熱を生 じた場合に、絶縁基板２が砕裂し易くなるものである。 尚、上述した実施例において、抵抗体薄膜７を導電性薄膜３と放電電極膜５と の両端に接続したが、勿論これに限定されることなく、続流放電を遮断すること ができる抵抗値であれば、導電性薄膜３と放電電極膜５の一端にのみ接続する構 成としてもよいものである。[0016] In addition, in the discharge type surge absorber 1 of the present invention, contact accidents with power lines and such Through an overvoltage test assuming such a situation, the rating of the discharge type surge absorption element was exceeded. When continuous overvoltage is applied, the discharge in the minute discharge gap 4 becomes the main discharge. It does not transfer to the gap 6, but in the micro discharge gap 4 or the micro discharge gap 4 and the main discharge gap 6. The discharge continues, and a continuous overcurrent flows through this discharge. and, In the event of such a short circuit, the conductive thin films 3, 3 will be damaged due to their resistance values. Heat is generated, thermal distortion occurs in the insulating substrate 2, and it fractures, causing discharge in the discharge space 12. Air flows into the gas to eliminate the discharge, thereby interrupting the overcurrent. Furthermore, in the discharge type surge absorber 1 of the present invention, the opposing sides of the insulating substrate 2 Since the legs 2a, 2a are formed on both side edges, the legs 2a, 2a can be attached to a circuit board, etc. When connecting to a circuit board, the entire insulating board 2 is tightly connected to a circuit board, etc., like a so-called chip type electronic component. The central part of the insulating board 2 is floating from the circuit board, etc., without being supported in the attached state. The conductive thin films 3, 3 generate heat that can shatter the insulating substrate 2. In this case, the insulating substrate 2 is likely to fracture. In the above-described embodiment, the resistor thin film 7 is composed of the conductive thin film 3 and the discharge electrode film 5. Although connected to both ends of the If the resistance value is such that the conductive thin film 3 is connected only to one end of the discharge electrode film 5, It is also good to have a complete set.
【００１７】[0017]
以上詳述した如く、本考案の放電型サージ吸収器によれば、放電空間を設けて 蓋部材により密閉状に被覆される絶縁基板表面に、微小放電間隙を隔てて対向す る導電性薄膜と、この導電性薄膜と導通し主放電間隙を隔てて対向する放電電極 膜と、導電性薄膜と放電電極膜に接続する抵抗体薄膜とを被着形成することで、 上記構成の放電型サージ吸収器の形状は偏平化して小型化することが容易となり 、したがって部品収容スペースの少ない小型の機器内に収容することが可能にな る等、放電型サージ吸収器の使用用途を拡大し、その利用価値を高めるものであ る。 また、導電性薄膜と放電電極膜とに、抵抗体薄膜を直列接続したことにより、 サージが消滅して正常な電源電圧のみが印加されている状態において、抵抗体薄 膜が電源電圧を分圧してサージ吸収素子に印加される電圧を放電電圧よりも低下 させ、続流放電を遮断する。 As detailed above, according to the discharge type surge absorber of the present invention, a discharge space is provided. The surface of the insulating substrate, which is hermetically covered by the lid member, is faced with a small discharge gap in between. a conductive thin film, and a discharge electrode that is electrically connected to the conductive thin film and faces across a main discharge gap. By depositing the film, a conductive thin film, and a resistive thin film connected to the discharge electrode film, The shape of the discharge type surge absorber with the above configuration can be made flat and compact. Therefore, it can be housed in small equipment with little space for parts. The aim is to expand the uses of discharge-type surge absorbers and increase their utility value. Ru. In addition, by connecting a resistive thin film in series with the conductive thin film and the discharge electrode film, When the surge has disappeared and only normal power supply voltage is applied, the resistor thin The membrane divides the power supply voltage and lowers the voltage applied to the surge absorption element below the discharge voltage. to cut off follow-on discharge.
【００１８】 そして、本考案の放電型サージ吸収器において、導電性薄膜の抵抗値を、連続 した過電流が流れたときに絶縁基板が熱歪みにより砕裂し得る発熱量を生ずる抵 抗値とすれば、電力線との接触事故やこのような事態を想定した過電圧試験によ って、放電型サージ吸収素子の定格を上回る連続する過電流が流れた場合に、導 電性薄膜の多大な発熱により絶縁基板を砕裂して放電ガスに空気を流入させるこ とで放電を消失させ、その結果過電流を遮断して放電型サージ吸収器による焼損 事故を防止し、ひいては優れた安全性を有し各種安全規格にも充分適合する放電 型サージ吸収器を実現することができるものである。[0018] In the discharge type surge absorber of this invention, the resistance value of the conductive thin film is continuously A resistor that generates heat that can cause the insulating substrate to shatter due to thermal distortion when an overcurrent flows through it. If it is a resistance value, it is determined by an overvoltage test assuming a contact accident with a power line or such a situation. Therefore, when a continuous overcurrent exceeding the rating of the discharge type surge absorption element flows, the conduction The large amount of heat generated by the conductive thin film causes the insulating substrate to shatter, allowing air to enter the discharge gas. The discharge is extinguished with the Discharge that prevents accidents, has excellent safety, and fully complies with various safety standards. It is possible to realize a type surge absorber.
【図１】本考案の放電型サージ吸収器の分解斜視図であ
る。FIG. 1 is an exploded perspective view of a discharge type surge absorber of the present invention.
【図２】本考案の放電型サージ吸収器の断面図である。FIG. 2 is a sectional view of the discharge type surge absorber of the present invention.
【図３】従来のサージ吸収素子の概略斜視図である。FIG. 3 is a schematic perspective view of a conventional surge absorption element.
【図４】従来のサージ吸収素子の概略断面図である。FIG. 4 is a schematic cross-sectional view of a conventional surge absorption element.
１ 放電型サージ吸収器 ２ 絶縁基板 ３ 導電性薄膜 ４ 微小放電間隙 ５ 放電電極膜 ６ 主放電間隙 ７ 抵抗体薄膜 １０ 蓋部材 １２ 放電空間 1 Discharge type surge absorber 2 Insulating substrate 3 Conductive thin film 4 Micro discharge gap 5 Discharge electrode film 6 Main discharge gap 7 Resistor thin film 10 Lid member 12 Discharge space
Claims (2)
部材により密閉状に被覆される絶縁基板上に、微小放電
間隙を隔てて対向する対の導電性薄膜と、該導電性薄膜
と電気的に接続され主放電間隙を隔てて対向する対の放
電電極膜と、上記導電性薄膜と放電電極膜とに直列接続
される抵抗体薄膜とを被着形成したことを特徴とする放
電型サージ吸収器。1. A pair of conductive thin films facing each other with a minute discharge gap interposed therebetween, on an insulating substrate which is provided with a discharge space filled with discharge gas and hermetically covered with a lid member; A discharge type surge comprising: a pair of discharge electrode films which are connected to each other and face each other across a main discharge gap; and a resistor thin film which is connected in series to the conductive thin film and the discharge electrode film. absorber.
が流れたときに絶縁基板が熱歪みにより砕裂し得る発熱
量を生ずる抵抗値としたことを特徴とする請求項１記載
の放電型サージ吸収器。2. The conductive thin film according to claim 1, wherein the resistance value of the conductive thin film is such that when a continuous overcurrent flows, the insulating substrate generates an amount of heat that can be shattered due to thermal distortion. Discharge type surge absorber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2534891U JPH04115793U (en) | 1991-03-22 | 1991-03-22 | Discharge type surge absorber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2534891U JPH04115793U (en) | 1991-03-22 | 1991-03-22 | Discharge type surge absorber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04115793U true JPH04115793U (en) | 1992-10-14 |
Family
ID=31910098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2534891U Pending JPH04115793U (en) | 1991-03-22 | 1991-03-22 | Discharge type surge absorber |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04115793U (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62232881A (en) * | 1986-03-31 | 1987-10-13 | ロ−ム株式会社 | Surge absorber |
| JPS6410592A (en) * | 1987-07-01 | 1989-01-13 | Okaya Electric Industry Co | Chip type surge absorbing element |
| JPH0325347A (en) * | 1989-06-22 | 1991-02-04 | Shimadzu Corp | Double refraction measuring method |
| JP4098291B2 (en) * | 2004-09-07 | 2008-06-11 | マルホン工業株式会社 | Game machine |
-
1991
- 1991-03-22 JP JP2534891U patent/JPH04115793U/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62232881A (en) * | 1986-03-31 | 1987-10-13 | ロ−ム株式会社 | Surge absorber |
| JPS6410592A (en) * | 1987-07-01 | 1989-01-13 | Okaya Electric Industry Co | Chip type surge absorbing element |
| JPH0325347A (en) * | 1989-06-22 | 1991-02-04 | Shimadzu Corp | Double refraction measuring method |
| JP4098291B2 (en) * | 2004-09-07 | 2008-06-11 | マルホン工業株式会社 | Game machine |
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