JPH04128646A - Laminated electrode for sensor - Google Patents
Laminated electrode for sensorInfo
- Publication number
- JPH04128646A JPH04128646A JP24965990A JP24965990A JPH04128646A JP H04128646 A JPH04128646 A JP H04128646A JP 24965990 A JP24965990 A JP 24965990A JP 24965990 A JP24965990 A JP 24965990A JP H04128646 A JPH04128646 A JP H04128646A
- Authority
- JP
- Japan
- Prior art keywords
- laminated electrode
- plasma
- film
- forming
- vessel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 238000002844 melting Methods 0.000 claims abstract description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 5
- 230000007613 environmental effect Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 3
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 abstract description 2
- FJBFPHVGVWTDIP-UHFFFAOYSA-N dibromomethane Chemical compound BrCBr FJBFPHVGVWTDIP-UHFFFAOYSA-N 0.000 abstract description 2
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 abstract description 2
- 238000001771 vacuum deposition Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 12
- 229910052736 halogen Inorganic materials 0.000 description 5
- 150000002367 halogens Chemical class 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000008018 melting Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- -1 amine compound-halogenated silane Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、センサ用積層電極に関する。更に詳しくは、
耐環境性にすぐれたセンサ用積層電極に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a laminated electrode for a sensor. For more details,
This invention relates to a laminated electrode for sensors with excellent environmental resistance.
〔従来の技術〕および〔発明が解決しようとする課題〕
湿度センサなどの各種のセンサに設けられている積層電
極では、高温条件下または高温高温条件下で用いられた
場合、下層金属の拡散とか、積層電極が接触するハロゲ
ン含有感湿膜による腐食とかで、抵抗値の変化が大きく
なる現象がみられるる。[Prior art] and [Problem to be solved by the invention]
When laminated electrodes installed in various sensors such as humidity sensors are used under high-temperature conditions or high-temperature conditions, they may suffer from diffusion of the underlying metal or corrosion due to the halogen-containing moisture-sensitive film that the laminated electrodes come into contact with. , a phenomenon in which the change in resistance value increases is observed.
例えば、Ａｕ／Ｎｉ積層電極では、高温になるとＡｕ層
にＮｉが拡散し抵抗値が大きくなり、これをハロゲン含
有感湿膜と接触させるようにして用いると。For example, in an Au/Ni laminated electrode, when the temperature rises, Ni diffuses into the Au layer, increasing the resistance value, and when used in contact with a halogen-containing moisture sensitive film.
高温では腐食を生ずるようになる。また、 Ａｕ／Ｎ。Corrosion will occur at high temperatures. Also, Au/N.
積層電極をハロゲン含有感湿膜に用いた場合には、通電
すると腐食を生ずるようになる。更に、湿度センサの積
層電極としてよく用いられている＾Ｕ／Ｃｒ積層電極で
も、このような使用条件下では、抵抗変化が大きくなる
現象がみられる。When a laminated electrode is used for a halogen-containing moisture-sensitive film, corrosion occurs when electricity is applied. Furthermore, even with U/Cr laminated electrodes that are often used as laminated electrodes in humidity sensors, there is a phenomenon in which the resistance change increases under such usage conditions.
本発明の目的は、高温高湿条件下において、ハロゲン含
有感湿膜などと接触させて用いても抵抗変化が少なく、
つまり耐環境性にすぐれたセンサ用積層電極を提供する
ことにある。The object of the present invention is to reduce resistance change even when used in contact with a halogen-containing moisture-sensitive film under high temperature and high humidity conditions.
In other words, the object of the present invention is to provide a laminated electrode for a sensor that has excellent environmental resistance.
かかる本発明の目的は、高融点金属上に白金を積層させ
たセンサ用積層電極によって達成される。This object of the present invention is achieved by a laminated electrode for a sensor in which platinum is laminated on a high melting point metal.
積層電極の下層は、Ｃｒ、 Ｔｉ、 Ｔａ、 Ｚｒ、
Ｎｂなどの融点１６５０℃以上の高融点金属を用い、ポ
ジ型のフォトレジストパターンを形成させた絶縁性基板
上に、真空蒸着法、スパッタリング法などにより、約１
００〜２０００人種度の膜厚で形成させる。引き続き、
同様にｐｔを用いて上層を形成させ、リフトオフ法によ
り積層電極を形成させる。The lower layer of the laminated electrode is Cr, Ti, Ta, Zr,
Approximately
The film is formed with a thickness of 0.00 to 2000. continuation,
Similarly, an upper layer is formed using PT, and a laminated electrode is formed by a lift-off method.
絶縁性基板上に設けられた導電性くし形電極上に、塩素
含有高分子薄膜（特開昭６１−２９０，３５１号公報）
、含窒素有機けい素化合物−ハロゲン化炭化水素混合物
プラズマ重合膜（同６２−２８２．２５５号公報）、含
窒素有機けい素化合物−ハロゲン化シラン混合物プラズ
マ重合膜（同６２−２５５，８６０号公報）、有機アミ
ン化合物−ハロゲン化炭化水素混合物プラズマ重合膜ま
たは有機アミン化合物−ハロゲン化シラン混合物プラズ
マ重合膜（同６２−２６１，９４６号公報）などよりな
る感湿膜を設けた湿度センサが、先に本出願人によって
提案されているが、これらのハロゲン含有感湿膜を用い
た湿度センサを高温高湿条件下で用いた場合においても
、本発明に係る積層電極、特にＰｔ／Ｃｒ、 Ｐｔ／Ｎ
ｂ積層電極は、Ａｕ／Ｃｒ積層電極と比較して抵抗変化
が少なく、すぐれた耐環境性を示している。A chlorine-containing polymer thin film is placed on a conductive comb-shaped electrode provided on an insulating substrate (Japanese Patent Application Laid-Open No. 61-290,351).
, Nitrogen-containing organosilicon compound-halogenated hydrocarbon mixture plasma-polymerized film (Publication No. 62-282.255), Nitrogen-containing organosilicon compound-halogenated silane mixture plasma-polymerized film (Publication No. 62-255,860) ), a plasma-polymerized membrane of an organic amine compound-halogenated hydrocarbon mixture, or a plasma-polymerized membrane of an organic amine compound-halogenated silane mixture (Publication No. 62-261,946), etc. However, even when humidity sensors using these halogen-containing moisture sensitive films are used under high temperature and high humidity conditions, the laminated electrode according to the present invention, especially Pt/Cr, Pt/ N
The laminated electrode b exhibits less resistance change than the Au/Cr laminated electrode and exhibits excellent environmental resistance.
次に、実施例について本発明を説明する。 Next, the present invention will be explained with reference to examples.
実施例
ガラス基板上に、ポジ型のフォトレジストパターンを形
成した後、真空蒸着法により高融点金属（Ｃｒ、 Ｚｒ
またはＮｂ）を５００人の膜厚で蒸着し、引き続き同様
にしてＰｔを２０００人の膜厚で蒸着し、リフトオフ法
により、−組の対向くし形電極を形成させた。Example After forming a positive photoresist pattern on a glass substrate, high melting point metals (Cr, Zr) were deposited by vacuum evaporation.
Alternatively, Nb) was deposited to a thickness of 500 nm, and then Pt was similarly deposited to a thickness of 2000 nm, and a set of opposing comb-shaped electrodes was formed by a lift-off method.
このくし形電極を形成させたガラス基板をプラズマ反応
容器内に入れ、容器内を真空排気した後、メチレンジブ
ロマイド（ガス状態）をｏ、５ｓｃｃ河、テトラメチル
エチレンジアミンを２．５５ＣＣＭ導入し、内部圧力を
０．０６Ｔｏｒｒにして、有効電力２６ｖの高周波を１
５分間放電し、これらの混合物プラズマ重合膜よりなる
感湿膜を形成させた。The glass substrate on which the comb-shaped electrodes were formed was placed in a plasma reaction vessel, and after the inside of the vessel was evacuated, methylene dibromide (gaseous state) was introduced at 5 scc and tetramethylethylenediamine at 2.55 CCM. The pressure is set to 0.06 Torr, and the high frequency of active power 26 V is set to 1
Discharge was carried out for 5 minutes to form a moisture sensitive film made of a plasma polymerized film of the mixture.
その後、再び真空排気し、メチルトリメトキシシラン（
ガス状ＪＩｌ）を２．Ｏ５ＣＣＭ導入し、内部圧力を０
．０６Ｔｏｒｒにして、有効電力６０１の高周波を１０
分間放電し、そのプラズマ重合膜よりなる保護膜を形成
させた。Then, evacuate again and methyltrimethoxysilane (
2. gaseous JIl). Introduce O5CCM and reduce internal pressure to 0
．． 06 Torr, and the high frequency of the active power 601 is 10
A protective film made of the plasma polymerized film was formed by discharging for a minute.
このようにして作製された湿度センサを、８５℃、８５
％ＲＨの恒温恒湿槽内に設置し、ＩＶ、 ＩＫＨｚの電
圧を印加し、通電時間毎の抵抗変化を測定した。得られ
た結果は、第１図（Ｐｔ／Ｃｒ）、第２図（Ｐｔ／Ｚｒ
）、第３図（Ｐｔ／Ｎｂ）または第４図（Ａｕ／Ｃｒ）
の各グラフに示される。これらの各グラフにおいて、０
とΔとは一組の電極の左側と右側の抵抗を示し、また・
とムとは線の間隔を変えて抵抗値を１．５倍となるよう
にしたものである。The humidity sensor produced in this way was heated at 85°C and 85°C.
It was placed in a constant temperature and humidity chamber at %RH, voltages of IV and IKHz were applied, and changes in resistance were measured for each time the current was applied. The obtained results are shown in Figure 1 (Pt/Cr) and Figure 2 (Pt/Zr).
), Figure 3 (Pt/Nb) or Figure 4 (Au/Cr)
shown in each graph. In each of these graphs, 0
and Δ represent the resistance of the left and right sides of a set of electrodes, and
Tomu is one in which the distance between the lines is changed to increase the resistance value by 1.5 times.
なお、これらの積層電極は、１００℃、８５％ＲＨ，１
２０時間（プレッシャークツカー）、１５０℃、２８３
時間（高温数Ｗ）、ＩＶ、 ＩＫＨｚ、８時ｆＲｆ（Ｍ
ｌに通電）（７）Ｉｌｊｉ下での抵抗値の増加は、いず
れも２％以下であった。Note that these laminated electrodes were heated at 100°C, 85%RH, 1
20 hours (pressure cutter), 150℃, 283
Time (high temperature number W), IV, IKHz, 8 o'clock fRf (M
(7) The increase in resistance value under Ilji was 2% or less in all cases.
第１〜４図は、湿度センサに用いられた各種積層電極に
おける通電時間毎の抵抗変化率を示すグラフである。FIGS. 1 to 4 are graphs showing the rate of change in resistance of various laminated electrodes used in a humidity sensor for each energization time.
Claims (1)
極。1. A laminated electrode for sensors made by laminating platinum on a high-melting point metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24965990A JP2959085B2 (en) | 1990-09-19 | 1990-09-19 | Humidity sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24965990A JP2959085B2 (en) | 1990-09-19 | 1990-09-19 | Humidity sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04128646A true JPH04128646A (en) | 1992-04-30 |
| JP2959085B2 JP2959085B2 (en) | 1999-10-06 |
Family
ID=17196312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24965990A Expired - Lifetime JP2959085B2 (en) | 1990-09-19 | 1990-09-19 | Humidity sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2959085B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07198646A (en) * | 1993-12-04 | 1995-08-01 | Lg Electron Inc | Low power-consumption-type thin film gas sensor and preparation thereof |
| JP2018017558A (en) * | 2016-07-26 | 2018-02-01 | ラピスセミコンダクタ株式会社 | Semiconductor device and manufacturing method of semiconductor device |
-
1990
- 1990-09-19 JP JP24965990A patent/JP2959085B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07198646A (en) * | 1993-12-04 | 1995-08-01 | Lg Electron Inc | Low power-consumption-type thin film gas sensor and preparation thereof |
| JP2018017558A (en) * | 2016-07-26 | 2018-02-01 | ラピスセミコンダクタ株式会社 | Semiconductor device and manufacturing method of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2959085B2 (en) | 1999-10-06 |
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