JPH04124058A - Al2o3-based ceramic - Google Patents

Al2o3-based ceramic

Info

Publication number
JPH04124058A
JPH04124058A JP2244727A JP24472790A JPH04124058A JP H04124058 A JPH04124058 A JP H04124058A JP 2244727 A JP2244727 A JP 2244727A JP 24472790 A JP24472790 A JP 24472790A JP H04124058 A JPH04124058 A JP H04124058A
Authority
JP
Japan
Prior art keywords
al2o3
strength
ceramics
sintering
grain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2244727A
Other languages
Japanese (ja)
Inventor
Moriyoshi Kanamaru
守賀 金丸
Tsuneo Tateno
立野 常男
Sadashi Kusaka
日下 貞司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority to JP2244727A priority Critical patent/JPH04124058A/en
Publication of JPH04124058A publication Critical patent/JPH04124058A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain the subject high-strength Al2O3-based ceramics by mixing, in a grain of Al2O3, particles of a compound of a transition element and elements selected from C, N and B in a state where dislocation can be formed. CONSTITUTION:In an Al2O3 grain, a compound, e.g. TiC of a transition element selected from IVa, Va, and VIa groups and elements selected from C, N and B, having >=10mum particle diameter is mixed in an amount of 0.4-40wt.% and the resultant mixture is converted to a state where dislocation is formed in the Al2O3 grain, thus obtaining the objective high-strength Al2O3-based ceramics. A higher strength can be obtained by adding an SiC whisker and/or an Si3N4 whisker in an amount of 3-40wt.% to the Al2O3-based ceramics. In addition, 0.5-10wt.% oxide of Mg, Si, Ca, Ti, Zr, Cr, Ni, Y or a rare earth metal may be added as a sintering assistant, in case of sintering (preferably at >=1600 deg.C) the above-mentioned ceramics.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明はAl2O3系セラミックスに関し、詳細には強
度の向上が図られたA120a系セラミツクスに関する
ものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to Al2O3 ceramics, and more particularly to A120a ceramics with improved strength.

[従来の技術] Al2O,系セラミックスは高強度を有すると共に、耐
食性、耐酸化性、耐摩耗性に優れており、機械部品や治
具・工具類等に適したエンジニアリングセラミックスと
して知られている。
[Prior Art] Al2O ceramics have high strength, excellent corrosion resistance, oxidation resistance, and wear resistance, and are known as engineering ceramics suitable for machine parts, jigs, tools, etc.

上記Al2O3系セラミックスを焼結するにあたっては
粗大結晶が成長しない程度の温度が用いられており、一
般に1500℃程度の温度で焼結されている。
In sintering the Al2O3-based ceramics, a temperature is used that does not allow coarse crystals to grow, and is generally sintered at a temperature of about 1500°C.

また上記Al2O3系セラミックスの強度及び靭性を向
上する技術としては、米国特許第4543345号公報
のSiCウィスカを添加する方法があり、この場合には
1850℃という比較的高温度で焼結を行うことが要求
されている。但しこの場合もSiCウィスカの有する結
晶粒成長抑制作用により、SiCウィスカが均一に分散
していれば粗大結晶の成長は見られない。
Furthermore, as a technique for improving the strength and toughness of the Al2O3 ceramics, there is a method of adding SiC whiskers as disclosed in U.S. Pat. requested. However, in this case as well, due to the crystal grain growth suppressing effect of the SiC whiskers, if the SiC whiskers are uniformly dispersed, no growth of coarse crystals will be observed.

[発明が解決しようとする課題] 上記の様に優れた特性を有するAl2O3系セラミック
スであっても、さらに高い強度が要求されており、強度
向上に関する新しい技術の開発が要望されている。本発
明は上記事情に着目してなされたものであフて、高い強
度を有するAl2O.系セラミックスを提供しようとす
るものである。
[Problems to be Solved by the Invention] Even Al2O3 ceramics having excellent properties as described above are required to have even higher strength, and there is a demand for the development of new techniques for improving strength. The present invention has been made in view of the above-mentioned circumstances, and is based on Al2O having high strength. The aim is to provide ceramics based on

[課題を解決するための手段] 上記目的を達成した本発明のAI、O,系セラミックス
とはIVa,VIa族よりなる群から選択される1種以
上の遷移元素と、C,N及びBよりなる群から選択され
る1種以上の元素からなる少なくとも1種以上の化合物
を0.5〜40重量%含み、且つ該化合物で少なくとも
粒径・10nrA以上の粒子形態を有するものがAl2
O,粒内に存在し、更にA1□03粒内に転位が形成さ
れたものであることを要旨とするものである。また上記
AI、O,系セラミックスにSiCウィスカおよび/ま
たはSi3N、ウィスカを3〜40重量%添加すれば更
に高い強度が得られる。
[Means for Solving the Problems] The AI, O, ceramic of the present invention that achieves the above object is composed of one or more transition elements selected from the group consisting of IVa and VIa groups, and C, N, and B. Al2 contains 0.5 to 40% by weight of at least one compound consisting of one or more elements selected from the group consisting of at least one compound selected from the group consisting of:
The gist is that O exists within the grains, and dislocations are further formed within the A1□03 grains. Moreover, even higher strength can be obtained by adding 3 to 40% by weight of SiC whiskers and/or Si3N whiskers to the above-mentioned AI, O, series ceramics.

[作用コ 本発明者らはAl2O3系セラミックスの強度向上に関
する技術について鋭意研究を重ねた結果、A11as系
セラミツクスは従来高温焼結により粗大結晶が成長し、
強度が低下するものと考えられていたが、条件によって
はむしろ高温焼結によりAl2O3粒内に転位を形成し
、大幅な強度向上につながるとの知見を得て本発明に想
到した。尚上記条件とは、rVa、Va、Vla族より
なる群から選択される1種以上の遷移元素と、C1N及
びBよりなる群から選択される1種以上の元素との化合
物であって最大粒径が1.0nm以上の粒子(以下添加
粒子ということがある)を含有させることであり、上記
各元素の組み合せであれば、夫々同様の効果を有するの
で、以下代表的にTiCを例に取り挙げ詳細に説明する
[Function] As a result of extensive research by the present inventors on techniques for improving the strength of Al2O3 ceramics, we found that coarse crystals grow in A11as ceramics due to conventional high-temperature sintering;
Although it was thought that the strength would decrease, the present invention was based on the knowledge that, depending on the conditions, high-temperature sintering could actually cause dislocations to form within the Al2O3 grains, leading to a significant improvement in strength. The above conditions refer to a compound of one or more transition elements selected from the group consisting of rVa, Va, and Vla groups and one or more elements selected from the group consisting of C1N and B. It is to contain particles with a diameter of 1.0 nm or more (hereinafter sometimes referred to as additive particles), and if the above elements are combined, each has the same effect, so below we will take TiC as a representative example. This will be explained in detail.

まずTiC粉末を5%混合したAl2O3を用いて15
00℃と1850℃の2種類の焼結温度により、ホット
プレス法で焼結を行い、その機械的特性を調べたところ
第1表に示す結果が得られた。
First, using Al2O3 mixed with 5% TiC powder,
Sintering was performed by a hot press method at two different sintering temperatures, 00°C and 1850°C, and the mechanical properties thereof were investigated, and the results shown in Table 1 were obtained.

第1表 即ち高温焼結を行えば粗大結晶が成長して強度が低下す
るというこれまでの知見に反して、1850℃で焼結を
行ったTiC含有Al2O3は、常温抗折強度において
約15 Kg/+u+’も高い強度を有することがわか
った。そこで本願発明者らは上記両セラミックスについ
て常温抗折強度試験後の破断面を電子顕微鏡により観察
した。しかしながら結果は第2.3図に示す通りであり
、1500℃[第2図]ではAl2O3結晶粒が微細で
あるのに対し、1850℃[第3図]ではAl2O3結
晶粒が成長して粗大になっており、従来の知見と同様の
ものであった。
Table 1: Contrary to previous knowledge that high-temperature sintering causes the growth of coarse crystals and reduces strength, TiC-containing Al2O3 sintered at 1850°C has a room-temperature flexural strength of approximately 15 kg. /+u+' was also found to have high strength. Therefore, the inventors of the present application observed the fractured surfaces of both of the above-mentioned ceramics after the room temperature bending strength test using an electron microscope. However, the results are as shown in Figure 2.3. At 1500℃ [Figure 2], the Al2O3 crystal grains are fine, but at 1850℃ [Figure 3], the Al2O3 crystal grains grow and become coarse. , which is similar to conventional findings.

そこでさらにTEM11過顕微鏡により、1850℃で
焼結を行ったTiC含有AI、O。
Therefore, TiC-containing AI, O was further sintered at 1850°C using a TEM11 microscope.

の微細組織を調べた。結果は第1図に示した図面代用写
真の通りであり、A1.O,結晶粒の粒内に存在するT
iC粒子を起点として転位が形成されており、該転位が
1850℃で焼結を行ったTiC含有Al2O3の強度
向上に寄与していることが判明した。
The microstructure was investigated. The results are as shown in the photograph substituted for the drawing shown in Figure 1, and A1. O, T existing within the grains
It was found that dislocations were formed starting from iC particles, and that these dislocations contributed to improving the strength of TiC-containing Al2O3 sintered at 1850°C.

本発明に係るAI、O,系セラミックスにおいて、Ti
Cに代表される添加粒子の最大粒径は強度向上に有効な
転位の起点となったり、或は転位を生じさせるには10
nlD以上であることが必要である。尚最大粒径は10
〜1000nlが好ましい。上記の様な大径粒子が少な
くとも数個以上存在するならば、他のTiC粒子につい
ては粒径は一切制限されないが、−船釣にはナノメータ
オーダの小粒径であることが推奨される。
In the AI, O, ceramics according to the present invention, Ti
The maximum particle size of the additive particles represented by C becomes a starting point for dislocations that are effective for improving strength, or the maximum particle size is 10 to cause dislocations.
It needs to be equal to or higher than nlD. The maximum particle size is 10
~1000 nl is preferred. As long as there are at least several large-diameter particles as described above, there is no restriction on the particle size of other TiC particles, but - for boat fishing, small particle sizes on the order of nanometers are recommended.

また上記添加粒子の含有量を0.5〜40%(重量%の
意味、以下同じ)と限定したのは、0.5%未満では強
度向上の効果が殆んど発揮されず、方多過ぎると相対的
にAl2O3の量が減少してAlzOsの有する優れた
特性が劣化するので40%を上限とした。
In addition, the content of the above-mentioned additive particles was limited to 0.5 to 40% (meaning by weight %, the same applies hereinafter) because if it is less than 0.5%, the effect of improving strength will hardly be exhibited, and if there is too much. The upper limit was set at 40% because the amount of Al2O3 is relatively reduced and the excellent properties of AlzOs are deteriorated.

尚本発明のA1□03系セラミックスは焼結後のA1z
Os結晶粒に転位が形成されていればよく、焼結条件や
Al2O3の粒径な特に限定するものではないが、焼結
温度が低い場合や原料として用いるAl2O3の平均粒
径が大きすぎる場合では転位が有効に形成されないこと
があるので、焼結温度は1500℃以上で高い程好まし
く、より好ましくは1600℃以上である。また原料と
して用いるA1.0’、の平均粒径は10μm以下が望
ましく、より好ましくは0.1〜3μmである。尚従来
AI、O,の粒径は小さい程、強度及び靭性に好ましい
と考えられてきたが、Al2O,の粒径が比較的大きい
場合であっても、TfC等の粒子を添加することによっ
て、強度の高いAl2O,系セラミックスを得られるこ
とが判明したものである。
The A1□03 series ceramics of the present invention has A1z after sintering.
It is sufficient that dislocations are formed in Os crystal grains, and there are no particular limitations on the sintering conditions or the grain size of Al2O3, but if the sintering temperature is low or the average grain size of Al2O3 used as a raw material is too large, Since dislocations may not be effectively formed, the sintering temperature is preferably as high as 1500°C or higher, and more preferably 1600°C or higher. Further, the average particle size of A1.0' used as a raw material is preferably 10 μm or less, more preferably 0.1 to 3 μm. Conventionally, it has been thought that the smaller the particle size of AI, O, the better for strength and toughness, but even if the particle size of Al2O is relatively large, by adding particles such as TfC, It has been found that Al2O-based ceramics with high strength can be obtained.

さらに本発明に係るAl2O3系セラミックスにおいて
はSiCウィスカおよび/またはSi、N4ウイスカを
3〜40%を加えることにより、強度及び靭性が大幅に
向上する。但し3%未満では充分な効果が期待できず、
一方40%を超えるとAl2O,及び添加する粒子の量
が相対的に減少して好ましくない また焼結助剤としてMg、si、Ca、TiZr、Cr
、Ni、Y及び希土類元素の酸化物よりなる群から選択
される1種以上の酸化物を0.5〜10%添加してもよ
い。
Furthermore, in the Al2O3 ceramic according to the present invention, the strength and toughness are significantly improved by adding 3 to 40% of SiC whiskers and/or Si, N4 whiskers. However, if it is less than 3%, sufficient effects cannot be expected.
On the other hand, if it exceeds 40%, the amount of Al2O and the particles to be added will be relatively reduced, which is undesirable.
, Ni, Y, and rare earth element oxides may be added in an amount of 0.5 to 10%.

[実施例] 平均粒径0.2μmのA12o3粉末に、平均粒径20
Or+mのTiC等の添加粒子を加え、両者を湿式ミル
により20時間攪拌・混合し、混合物を得た。該混合物
をスプレードライヤにより乾燥造粒するか、または、上
記混合物に必要によりウィスカおよび/または焼結助剤
を加えて湿式ミルにより20時間攪拌・混合した後、ス
プレードライヤにより乾燥造粒した。尚上記添加粒子、
ウィスカ、焼結助剤の種類及び含有量は第2表に示す。
[Example] A12o3 powder with an average particle size of 0.2 μm was added with an average particle size of 20 μm.
Additive particles such as Or+m TiC were added, and both were stirred and mixed using a wet mill for 20 hours to obtain a mixture. The mixture was dried and granulated using a spray dryer, or whiskers and/or sintering aids were added to the mixture as required, and the mixture was stirred and mixed using a wet mill for 20 hours, and then dried and granulated using a spray dryer. In addition, the above additive particles,
The types and contents of whiskers and sintering aids are shown in Table 2.

得られた混合粉末を黒鉛型に詰め込みAr気流中にて1
850℃、 200 Kg/crm”、 45分間の条
件でホットプレスにより一軸加圧焼結し、本発明に係る
Al2O3系セラミックスの実施例1〜9を得た。
The obtained mixed powder was packed into a graphite mold and heated in an Ar air flow for 1
Uniaxial pressure sintering was carried out using a hot press at 850° C., 200 Kg/crm” for 45 minutes to obtain Al2O3 ceramics Examples 1 to 9 according to the present invention.

この様にして得られたA12o3系セラミツクスについ
て、室温における抗折強度、高温(1400℃)での抗
折強度及び相対密度の測定を行った。結果は第2表に併
記する。尚比較例1としてSiCウィスカの含有量を本
発明範囲の上限を超える50%を含有させた以外は、上
記実施例と同様の方法(操作2手順1条件)により、A
l2O,系セラミックスを得た。また比較例2〜4は1
500℃で焼結を行なったものであり、それ以外は上記
実施例と同様にしてAl2O3系セラミックスを得た。
For the A12o3 ceramics obtained in this way, the bending strength at room temperature, the bending strength at high temperature (1400° C.), and the relative density were measured. The results are also listed in Table 2. As Comparative Example 1, A.
12O, based ceramics were obtained. In addition, Comparative Examples 2 to 4 are 1
Sintering was performed at 500°C, and other than that, an Al2O3-based ceramic was obtained in the same manner as in the above example.

比較例として得たAl2O,系セラミックスについても
実施例と同様の測定を行った。結果は第2表に併記する
The same measurements as in the example were also carried out on the Al2O ceramic obtained as a comparative example. The results are also listed in Table 2.

本発明に係るAl2O,系セラミックスである実施例1
〜9はいずれも相対密度が高く、室温抗折強度及び高温
抗折強度が共に高いことがわかる。これに対して比較例
1はSiCウィスカ量が多過ぎる為に相対密度が低く、
室温抗折強度及び高温抗折強度が共に低い。また150
0℃で焼結を行った比較例2〜4も焼結後のA1zOs
結晶粒に転位が形成されておらず室温抗折強度及び高温
抗折強度が著しく低かった。
Example 1 of Al2O-based ceramics according to the present invention
It can be seen that Samples 9 to 9 all have high relative densities, and both room temperature and high temperature transverse strength are high. On the other hand, in Comparative Example 1, the relative density was low because the amount of SiC whiskers was too large.
Both room temperature bending strength and high temperature bending strength are low. 150 again
Comparative Examples 2 to 4, which were sintered at 0°C, also had A1zOs after sintering.
No dislocations were formed in the crystal grains, and the room temperature flexural strength and high temperature flexural strength were extremely low.

[発明の効果] 本発明は以上の様に構成されているので、強度の高いA
I、O,系セラミックスが提供できることとなった。
[Effects of the Invention] Since the present invention is configured as described above, the A
Now we can provide I, O, ceramics.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明に係るAl2O5系セラミックスにおい
て、転位が形成された結晶の構造を示す図面代用写真、
第2図は1500℃で焼結を行ったAI、O,系セラミ
ックスの結晶の構造を示す図面代用写真、第3図は18
50℃で焼結を行ったAl2O3系セラミックスの結晶
の構造を示す図面代用写真である。 比願人 株式会社神戸製鋼所 図1川Cノ)昂114 0.5μm 第2図 第3図 手続補正書 (方式) %式% 発明の名称 Al2O3系セラミックス 補正をする者 事件との関係
FIG. 1 is a photograph substituted for a drawing showing the structure of a crystal in which dislocations are formed in the Al2O5-based ceramic according to the present invention;
Figure 2 is a photograph substituted for a drawing showing the crystal structure of AI, O, ceramics sintered at 1500℃, Figure 3 is 18
It is a photograph substituted for a drawing showing the crystal structure of Al2O3-based ceramics sintered at 50°C. Higanjin Kobe Steel Co., Ltd. Figure 1 Kawa C-no) Kou 114 0.5 μm Figure 2 Figure 3 Procedural amendment (method) % formula % Name of the invention Relationship to the Al2O3 ceramics amendment person case

Claims (3)

【特許請求の範囲】[Claims] (1)IVa,Va,VIa族よりなる群から選択される1
種以上の遷移元素と、C,N及びBよりなる群から選択
される1種以上の元素からなる少なくとも1種以上の化
合物を0.5〜40重量%含み、且つ該化合物で少なく
とも粒径:10nm以上の粒子形態を有するものがAl
_2O_3粒内に存在し、更にAl_2O_3粒内に転
位が形成されたものであることを特徴とするAl_2O
_3系セラミックス。
(1) 1 selected from the group consisting of IVa, Va, and VIa groups
Contains 0.5 to 40% by weight of at least one compound consisting of one or more transition elements and one or more elements selected from the group consisting of C, N, and B, and the compound has at least a particle size of: Al has a particle size of 10 nm or more.
Al_2O, which is present in the Al_2O_3 grains and further has dislocations formed within the Al_2O_3 grains.
_3 series ceramics.
(2)SiCウィスカおよび/またはSi_3N_4ウ
ィスカを3〜40重量%含有してなる請求項(1)記載
のAl_2O_3系セラミックス。
(2) The Al_2O_3 ceramic according to claim (1), containing 3 to 40% by weight of SiC whiskers and/or Si_3N_4 whiskers.
(3)焼結助剤として、Mg,Si,Ca,Ti,Zr
,Cr,Ni,Y及び希土類元素の酸化物よりなる群か
ら選択される1種以上の酸化物を、0.5〜10重量%
含有してなる請求項(1)または(2)記載のAl_2
O_3系セラミックス。
(3) Mg, Si, Ca, Ti, Zr as sintering aids
, Cr, Ni, Y, and oxides of rare earth elements in an amount of 0.5 to 10% by weight.
Al_2 according to claim (1) or (2) containing
O_3 series ceramics.
JP2244727A 1990-09-14 1990-09-14 Al2o3-based ceramic Pending JPH04124058A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2244727A JPH04124058A (en) 1990-09-14 1990-09-14 Al2o3-based ceramic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2244727A JPH04124058A (en) 1990-09-14 1990-09-14 Al2o3-based ceramic

Publications (1)

Publication Number Publication Date
JPH04124058A true JPH04124058A (en) 1992-04-24

Family

ID=17123002

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2244727A Pending JPH04124058A (en) 1990-09-14 1990-09-14 Al2o3-based ceramic

Country Status (1)

Country Link
JP (1) JPH04124058A (en)

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* Cited by examiner, † Cited by third party
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JP2014082277A (en) * 2012-10-15 2014-05-08 Nippon Tungsten Co Ltd Electrostatic chuck dielectric layer and electrostatic chuck

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014061358A1 (en) * 2012-10-15 2014-04-24 日本タングステン株式会社 Ceramic material and abrasion resistant member using same
JP2014082277A (en) * 2012-10-15 2014-05-08 Nippon Tungsten Co Ltd Electrostatic chuck dielectric layer and electrostatic chuck

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