JPH04124001A - Purification of arsine - Google Patents
Purification of arsineInfo
- Publication number
- JPH04124001A JPH04124001A JP24653390A JP24653390A JPH04124001A JP H04124001 A JPH04124001 A JP H04124001A JP 24653390 A JP24653390 A JP 24653390A JP 24653390 A JP24653390 A JP 24653390A JP H04124001 A JPH04124001 A JP H04124001A
- Authority
- JP
- Japan
- Prior art keywords
- arsine
- alumina gel
- purification
- temperature
- column
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000746 purification Methods 0.000 title claims abstract description 38
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 title claims abstract description 37
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 34
- 230000004913 activation Effects 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 14
- 239000012535 impurity Substances 0.000 abstract description 10
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 3
- 239000010935 stainless steel Substances 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 238000001994 activation Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 239000003463 adsorbent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002808 molecular sieve Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000007670 refining Methods 0.000 description 2
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000012629 purifying agent Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野〕
この発明は、化合物半導体などの製造原料であるアルシ
ン（Ａ、５Ｈ３）の精製方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for purifying arsine (A, 5H3), which is a raw material for manufacturing compound semiconductors and the like.
ガリウムヒ素（ＧａＡｓ）などの化合物半導体の製造に
用いられるアルシンは極めて高純度であることが絶対的
に必要である。It is absolutely necessary that arsine used in the manufacture of compound semiconductors such as gallium arsenide (GaAs) be of extremely high purity.
従来、このようなアルシンの精製には、モレキュラー／
−ブ（分子ふるい）か用いられている。Conventionally, such purification of arsine has been carried out using molecular/
- Molecular sieves are used.
しかしながら、モレキュラーシーブによって精製された
アルシンを用いて製造された化合物半導体、特に半導体
レーザーなどの光半導体では、十分な性能が得られない
問題かあった。However, compound semiconductors manufactured using arsine purified by molecular sieves, especially optical semiconductors such as semiconductor lasers, have the problem of not being able to obtain sufficient performance.
これは、モレキュラーシーブによる精製では、水分や二
酸化炭素等は除去し得るか、アルシン中には製造過程で
、その外の不純物か混入するものと思われ、モレキュラ
ーシーブにより精製したものでは、所望するに足りる充
分な性能を有する化合物半導体が得られないのが実情で
ある。これはその他に何等かの不純物か極微量混入して
いるものと考えられ、その対応解決か望まれていた。This is because purification using molecular sieves does not remove moisture, carbon dioxide, etc., or other impurities may be mixed into arsine during the manufacturing process. The reality is that compound semiconductors with sufficient performance cannot be obtained. This is thought to be due to a trace amount of some other impurity being mixed in, and a solution was desired.
よって、この発明の課題は、微量の不純物の除去か十分
に行われ、優れた性能の光半導体などを得ることができ
るアルシンの精製方法を提供することにある。Therefore, an object of the present invention is to provide a method for purifying arsine that can sufficiently remove trace amounts of impurities and produce optical semiconductors with excellent performance.
かかる課題解決のため種々実験を試みた結果、精製剤と
してアルミナゲルを用いて精製することによって得られ
たアルシンを使用すると極めて良好な性能を有する化合
物半導体を製造し得ることを知見し得たものである。As a result of conducting various experiments to solve this problem, we have discovered that it is possible to produce a compound semiconductor with extremely good performance by using arsine obtained by purification using alumina gel as a purifying agent. It is.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
この発明で精製剤として用いられるアルミナケルは、従
来より気体の乾燥などの用途に用いられる吸着剤の１種
であるが、この発明では、このものを活性化処理して精
製剤として用いる。このアルミナゲルとしては、アルミ
ナ単独からなるものは勿論、少量のシリカや酸化ナトリ
ウムなどを含んでいるものでも使用しうる。具体的なも
のとしては、例えば活性化アルミナとして水沢化学工業
（株）製の「ネオビートＤ」、 「ネオビードＰＪ。Alumina gel used as a purification agent in this invention is a type of adsorbent conventionally used for purposes such as drying gases, but in this invention, this material is activated and used as a purification agent. As this alumina gel, it is possible to use not only one made of alumina alone but also one containing a small amount of silica or sodium oxide. Specifically, activated aluminas include "Neobeet D" and "Neobead PJ" manufactured by Mizusawa Chemical Industry Co., Ltd.
［ネオビーＦ’ＭＨＢＪ、ｒネオビードＣゴ、 「ネオ
ビー）” Ｇ Ｂ ｊなどを使うことができる。活性化
処理は、このアルミナゲルを１１０〜２００℃の温度範
囲で２００〜３００分程度加熱する方法や１、１．０〜
２００℃に加熱されたアルゴン、窒素などの不活性ガス
と接触させる方法なとかある。活性化温度は上記温度範
囲内であれば、高い方か高活性化されて好ましいが、２
００℃を越えるとアルミナゲルの粉化か生して好ましく
ない。１１０℃未満では実質的に活性化か困難である。[You can use neobee F'MHBJ, r neobie C go, "neobee" G B j, etc. The activation treatment can be carried out by heating this alumina gel in a temperature range of 110 to 200°C for about 200 to 300 minutes, or by heating the alumina gel in a temperature range of 1.
There is a method of contacting with an inert gas such as argon or nitrogen heated to 200°C. If the activation temperature is within the above temperature range, it is preferable to have a higher activation temperature or a higher activation temperature.
If the temperature exceeds 00°C, the alumina gel may turn into powder, which is undesirable. Activation is substantially difficult at temperatures below 110°C.
又、アルシン精製時の温度は、少なくとも１０℃以上で
あることか必要であり、不純物の除去効率の点からは５
０℃以上、好ましくは１００’ｃ前後が望ましい。In addition, the temperature during purification of arsine must be at least 10°C or higher, and from the point of view of impurity removal efficiency, it is necessary to
The temperature is desirably 0°C or higher, preferably around 100'c.
具体的な精製方法としては、カラムなどに活性化処理さ
れたアルミナケルを充填し、カラムの一方から未精製の
アルシンを上記温度範囲にて他方に流す方法やアルミナ
ゲルを充填したカラムに、予め加熱された不活性ガスを
流してアルミナゲルを活性化したのち、未精製アルシン
をカラムに流す方法などが簡便であるが、要はアルミナ
ゲルと未精製アルシンとか接触すればよく、これら以外
の方法でも勿論採用可能である。Specific purification methods include filling a column with activated alumina gel and flowing unpurified arsine from one side of the column to the other at the above temperature range, or pre-heating a column filled with alumina gel. A simple method is to activate the alumina gel by flowing an inert gas, and then flow the unpurified arsine into the column, but the point is that the alumina gel and the unpurified arsine only need to come into contact, and other methods can also be used. Of course, it can be adopted.
第１図はこの発明の方法に用いられる精製装置の一例を
示すもので、図中符号１はステンレス鋼などからなるカ
ラムである。このカラム】の両端にはそれぞれ流入バイ
ブ２と流出バイブ３とか取り付けられており、これら２
つのバイブ２，３の先端にはフランジ４，５が取り付け
られている。FIG. 1 shows an example of a purification apparatus used in the method of the present invention, and reference numeral 1 in the figure is a column made of stainless steel or the like. An inflow vibrator 2 and an outflow vibrator 3 are attached to both ends of this column, and these two
Flanges 4 and 5 are attached to the tips of the two vibrators 2 and 3.
カラム１内には、粒状のアルミナゲルＡが充填されてお
り、カラム１内の両端側にはアルミナゲルＡの流出を防
止するためのフィルタ６．７か設けられている。The column 1 is filled with granular alumina gel A, and filters 6 and 7 are provided at both ends of the column 1 to prevent the alumina gel A from flowing out.
この精製装置１１は、例えば第２図に示すような精製系
によって使用に供される。精製装置１１の流入バイブ２
に三方切換弁】２を介して未精製アルシンが充填された
ポンベ１３が接続されている。また、三方切換弁１２に
は管１４を経て加熱窒素ガス発生手段１５が接続されて
いる。また、精製装置１１の流出パイプ３は管１６を経
て図示しない供給先に接続されている。This purification apparatus 11 is put to use by a purification system as shown in FIG. 2, for example. Inflow vibe 2 of purifier 11
A pump 13 filled with unrefined arsine is connected to the pump via a three-way switching valve 2. Further, heated nitrogen gas generating means 15 is connected to the three-way switching valve 12 via a pipe 14. Further, the outflow pipe 3 of the purification device 11 is connected to a supply destination (not shown) via a pipe 16.
まず、三方切換弁１２を操作し、加熱窒素ガス発生手段
１５からの温度１１０〜２００℃に加熱された窒素ガス
を精製装置に送り込み、カラム１内のアルミナゲルＡを
活性化する。加熱窒素ガスの流量はアルミナケル１ｇ当
たり２０〜５０ｙρ程度で十分である。活性化処理か終
了したら、三方切換弁】２を操作し、ポンベ１３から未
精製アルシンが精製装置１１に流入するようにして精製
を開始する。カラム１にヒータを設けて内部を加熱し、
アルミナゲルとの接触の際の温度を高めるようにしても
よい。未精製アルシンの流速はアルミナゲル１０ｇ当た
＃） １００〜２５０ｘ（１／分程度が好ましい。First, the three-way switching valve 12 is operated to send nitrogen gas heated to a temperature of 110 to 200° C. from the heated nitrogen gas generating means 15 into the purification device to activate the alumina gel A in the column 1. A flow rate of the heated nitrogen gas of about 20 to 50 yρ per gram of alumina kel is sufficient. When the activation process is completed, the three-way switching valve 2 is operated to allow unrefined arsine to flow from the pump 13 into the refining device 11 to start refining. A heater is installed in column 1 to heat the inside.
The temperature during contact with the alumina gel may be increased. The flow rate of unpurified arsine is 100 to 250x (per 10 g of alumina gel) (preferably about 1/min).
かくして、精製装置１１の流出パイプ３からは不純物が
除去された精製アルシンが得られ供給先に送られる。In this way, purified arsine from which impurities have been removed is obtained from the outflow pipe 3 of the purification device 11 and sent to the supply destination.
なお本発明での使用によって精製能力を失ったアルミナ
ゲルは、吸着剤の如き再生することができず、再使用は
不可能である。従って再生か不可能であり、精製効率が
高い温度の方か高いことから考えて、ここでのアルミナ
ゲルの精製作用は少なくとも吸着作用によるものではな
いと考えられる。Note that alumina gel that has lost its purification ability due to use in the present invention cannot be regenerated like an adsorbent and cannot be reused. Therefore, considering that regeneration is impossible and purification efficiency is higher at higher temperatures, it is thought that the purification effect of alumina gel here is not at least due to adsorption.
以下、実験例を示す。Experimental examples are shown below.
（実験例１）
ステンレス鋼製の精製装置（内径３６ｒＭ、長さ１５０
ｘｍ）に、アルミナゲルとして「ネオビートＤｒ
（粒径１６〜３２ ） ッシｘ ）を１５０ＪＩｃ（
約８５ｇ）充填した。そして充填したアルミナゲルは別
に窒素ガス雰囲気下、２００℃で１２０分加熱して活性
化処理したものを用いた。(Experiment Example 1) Stainless steel purification equipment (inner diameter 36 rM, length 150 m)
xm) as alumina gel, “Neobeat Dr.
(particle size 16-32) 150 JIc (
Approximately 85g) was filled. The filled alumina gel was separately activated by heating at 200° C. for 120 minutes in a nitrogen gas atmosphere.
サンプルガスとしてアルシンの精製装置への流速を】４
７分と一定とし、精製温度を６０℃として、サンプルガ
スを流しつづけて精製した。Flow rate of arsine to the purification device as sample gas】4
Purification was carried out by keeping the sample gas flowing at a constant time of 7 minutes and at a purification temperature of 60°C.
このようにしてアルミナゲルを用いて精製したアルシン
と未精製のアルシンとを用いて、それぞれ金属酸化物気
相エピタキシャル成長法（ＭＯＶＰＥ）によって、Ｇａ
Ａｓエピタキシャル層を成長させ、これらエピタキシャ
ル層についてホール測定および低温ホトルミネッセンス
によって比較評価した。成長条件は温度６３０℃，速度
５μ辺／時間、Ｖ／ＩＩＩ比３０である。Using arsine thus purified using alumina gel and unpurified arsine, Ga was grown by metal oxide vapor phase epitaxial growth (MOVPE).
As epitaxial layers were grown and these epitaxial layers were comparatively evaluated by Hall measurements and low temperature photoluminescence. The growth conditions were a temperature of 630° C., a speed of 5 μm/hour, and a V/III ratio of 30.
未精製アルシンを用いて得られたエピタキシャル層の不
純物濃度は、室温で１．３５ＸＩ０１４Ｇ、−３７７に
で１．９Ｘ １０１′ｃｍ−”であり、移動度は、室温
で７９８０ｃｙ’／Ｖｓ、７７にて１０５８００Ｑ１ｒ
２／Ｖｓであった。これに対して、精製アルシンを用い
て得られたエピタキシャル層では高抵抗であり、ホール
測定はできなかった。The impurity concentration of the epitaxial layer obtained using unpurified arsine is 1.9X 101'cm-'' at 1.35XI014G, -377 at room temperature, and the mobility is 7980cy'/Vs at room temperature, at 77 te105800Q1r
It was 2/Vs. In contrast, the epitaxial layer obtained using purified arsine had a high resistance, and hole measurements were not possible.
第３図は、未精製アルシンによるエビタキンセル層の４
．２Ｋにお（するホトルミネッセンススペクトラムを示
し、第６図は精製アルシンによる同様のホトルミネッセ
ンススペクトラムを示すものである。これらのスペクト
ラムにおいて、（ＢＡ）はバントアクセプタ遷移、（Ａ
−、Ｘ）はイオン化アクセプとエキシトンの複合体、（
Ｄ−Ａ）はドナーアクセプタペア発光によるビーつてあ
り、８２０ｎｍ付近のピークはトナーに関連したエキシ
トンからの発光である。Figure 3 shows the four layers of Evitakin cell layer with unrefined arsine.
．． Figure 6 shows a similar photoluminescence spectrum for purified arsine. In these spectra, (BA) is the band acceptor transition, (A
-, X) is a complex of ionized accept and exciton, (
D-A) is the beat due to donor-acceptor pair emission, and the peak around 820 nm is emission from excitons related to toner.
第３図と第４図を比較すると、第４図でのスペクトルで
は、（Ｂ−Ａ）、（Ａ−、Ｘ）のピークか高くなってお
り、（Ｉ）−Ａ）のピークか低くなっている。このこと
から、精製アルシンによるエピタキシャル層はＰ−であ
ると推定され、Ｎ型不純物が減少したことが推定された
。Comparing Figure 3 and Figure 4, in the spectrum in Figure 4, the (B-A), (A-, X) peaks are higher, and the (I)-A) peak is lower. ing. From this, it was estimated that the epitaxial layer made of purified arsine was P-, and it was estimated that the N-type impurity was reduced.
以上の結果から、アルミナゲルによる精製によって不純
物か除去され、特性の良好な光半導体等を製造すること
か可能であることかわかる。From the above results, it can be seen that impurities are removed by purification using alumina gel, and it is possible to produce optical semiconductors and the like with good characteristics.
つぎに、精製時における温度の影響について実験した結
果、下記の表の通りの性能を示した。Next, as a result of an experiment on the influence of temperature during purification, the performance shown in the table below was shown.
表
ここでの実験は、前記実験と同様の精製装置と精製条件
にて精製温度のみ変化させて行ったものである。The experiments in this table were conducted using the same purification equipment and purification conditions as in the previous experiment, but only by changing the purification temperature.
以上のことより、本発明の精製方法では１０℃以上の温
度で精製可能であり、そして高い１度にすればより精製
効果か向上することが判明した。From the above, it has been found that the purification method of the present invention allows purification at a temperature of 10°C or higher, and that the purification effect is further improved by increasing the temperature to 1°C.
しかし、１５０℃以上にて精製するとアルミナゲルが粉
化してこれを同伴する不都合か生じる。However, if the alumina gel is purified at a temperature of 150° C. or higher, the alumina gel will be powdered, resulting in the inconvenience of being accompanied by the alumina gel.
寿命到達後のアルミナゲルは一般の吸着剤のようには再
生して再使用は出来なかった。After reaching the end of its lifespan, alumina gel could not be regenerated and reused like ordinary adsorbents.
以上説明したように、この発明のアルシンの精製方法は
、アルミナゲルを用いるものであるので、アルシン中に
含まれる不純物かほぼ完全に除去され、高純度のアルシ
ンを得ることができる。よって、この発明の精製方法で
精製されたアルシンによれば、特性の優れた半導体レー
ザーなどの化合物半導体等を得ることかできる。As explained above, since the arsine purification method of the present invention uses alumina gel, impurities contained in arsine are almost completely removed, and highly pure arsine can be obtained. Therefore, using arsine purified by the purification method of the present invention, compound semiconductors such as semiconductor lasers with excellent characteristics can be obtained.
第１図はこの発明の方法を実施するに好適な精製装置の
一例を示す部分断面図、第２図は第１図に示された精製
装置を用いてアル、シンを精製するためのシステムの例
を示す構成図、第３図ないし第４図は、いずれも実験例
の結果を示すグラフで°ある。
−４＋
□？FIG. 1 is a partial sectional view showing an example of a purification apparatus suitable for carrying out the method of the present invention, and FIG. 2 is a diagram of a system for purifying al-syn using the purification apparatus shown in FIG. The configuration diagram showing the example and FIGS. 3 and 4 are graphs showing the results of the experimental example. -4+ □?
Claims (3)
特徴とするアルシンの精製方法。(1) A method for purifying arsine, which comprises purifying arsine using alumina gel.
る請求項（１）記載のアルシンの精製方法。(2) The method for purifying arsine according to claim (1), characterized in that the temperature during purification is 10° C. or higher.
ある請求項（１）記載のアルシンの精製方法。(3) The method for purifying arsine according to claim (1), wherein the activation temperature of the alumina gel is 110 to 200°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02246533A JP3105529B2 (en) | 1990-09-17 | 1990-09-17 | Purification method of arsine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02246533A JP3105529B2 (en) | 1990-09-17 | 1990-09-17 | Purification method of arsine |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04124001A true JPH04124001A (en) | 1992-04-24 |
| JP3105529B2 JP3105529B2 (en) | 2000-11-06 |
Family
ID=17149827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP02246533A Expired - Fee Related JP3105529B2 (en) | 1990-09-17 | 1990-09-17 | Purification method of arsine |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3105529B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000020330A1 (en) * | 1998-10-02 | 2000-04-13 | Aeronex, Inc. | Method and apparatus for purification of hydride gas streams |
| US6350300B1 (en) | 2001-01-26 | 2002-02-26 | Aeronex, Inc. | Gas purification apparatus |
| US6461411B1 (en) | 2000-12-04 | 2002-10-08 | Matheson Tri-Gas | Method and materials for purifying hydride gases, inert gases, and non-reactive gases |
| US6468333B2 (en) | 2001-01-22 | 2002-10-22 | Aeronex, Inc. | Gas purifier apparatus |
| US7250072B2 (en) | 2003-11-19 | 2007-07-31 | Air Products And Chemicals, Inc. | Removal of sulfur-containing impurities from volatile metal hydrides |
| CN113072041A (en) * | 2021-03-08 | 2021-07-06 | 湖北航天化学技术研究所 | Preparation method of fine-grained alpha-aluminum trihydride |
-
1990
- 1990-09-17 JP JP02246533A patent/JP3105529B2/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000020330A1 (en) * | 1998-10-02 | 2000-04-13 | Aeronex, Inc. | Method and apparatus for purification of hydride gas streams |
| US6241955B1 (en) | 1998-10-02 | 2001-06-05 | Aeronex, Inc. | Method and apparatus for purification of hydride gas streams |
| US6461411B1 (en) | 2000-12-04 | 2002-10-08 | Matheson Tri-Gas | Method and materials for purifying hydride gases, inert gases, and non-reactive gases |
| US7033418B2 (en) | 2000-12-04 | 2006-04-25 | Matheson Tri-Gas, Inc. | Method and materials for purifying hydride gases, inert gases, and non-reactive gases |
| US6468333B2 (en) | 2001-01-22 | 2002-10-22 | Aeronex, Inc. | Gas purifier apparatus |
| US6350300B1 (en) | 2001-01-26 | 2002-02-26 | Aeronex, Inc. | Gas purification apparatus |
| US7250072B2 (en) | 2003-11-19 | 2007-07-31 | Air Products And Chemicals, Inc. | Removal of sulfur-containing impurities from volatile metal hydrides |
| CN113072041A (en) * | 2021-03-08 | 2021-07-06 | 湖北航天化学技术研究所 | Preparation method of fine-grained alpha-aluminum trihydride |
| CN113072041B (en) * | 2021-03-08 | 2022-03-04 | 湖北航天化学技术研究所 | Preparation method of fine-grained alpha-aluminum trihydride |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3105529B2 (en) | 2000-11-06 |
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