JPH04123306A - Magneto-resistance effect element - Google Patents
Magneto-resistance effect elementInfo
- Publication number
- JPH04123306A JPH04123306A JP24234190A JP24234190A JPH04123306A JP H04123306 A JPH04123306 A JP H04123306A JP 24234190 A JP24234190 A JP 24234190A JP 24234190 A JP24234190 A JP 24234190A JP H04123306 A JPH04123306 A JP H04123306A
- Authority
- JP
- Japan
- Prior art keywords
- film
- resistance
- magnetoresistive
- layer
- magneto
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000694 effects Effects 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000005291 magnetic effect Effects 0.000 abstract description 48
- 239000012212 insulator Substances 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 2
- 238000000992 sputter etching Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 29
- 230000005294 ferromagnetic effect Effects 0.000 description 11
- 230000005415 magnetization Effects 0.000 description 9
- 229910000929 Ru alloy Inorganic materials 0.000 description 8
- 229910001339 C alloy Inorganic materials 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 230000005641 tunneling Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
Abstract
Description
【産業上の利用分野１
本発明は高い磁気抵抗効果を有する多層磁性薄膜に関し
、特に、磁界センサ、および磁気ディスク装置などに用
いる再生用磁気ヘッドに適した磁気抵抗効果素子に関す
る。
［従来の技術］
高密度磁気記録における再生用磁気ヘッドとして、磁気
抵抗効果を用いた磁気ヘッドの研究が進められている。
高性能を有する磁気ヘッドを実用化するためには、高い
磁気抵抗効果を有する磁性薄膜を開発することが望まし
い、最近、フィジカル レビュー レターズ（Ｐｈｙｓ
ｉｃａｌ Ｒｅｖｉｅｉ＋Ｌｅｔｔｅｒｓ） 、 Ｖｏ
ｌ、６１． Ｎｏ、２１．２４７：’〜２４７５ページ
（１９８８年）に記載のように、抵抗変化率が５０％近
くに達するＦ ｅ ／ Ｃｒ多層膜が報告されている。
【発明が解決しようとする課題］
Ｆ ｅ ／ Ｃｒ多層膜のような多層構造を有する磁気
抵抗効果素子では、電子が磁性層から他の磁性層に移る
時、すなわち、非磁性中間層を通過する時の電気抵抗が
磁界によって変化する。この時、電流は膜厚方向に流れ
る。しかし、磁性膜の膜厚は数１１００ｎ以下であり、
素子′抵抗は低い、従って、抵抗変化率は高くても、抵
抗変化量は小さく、実際の磁界センサ、磁気ヘッドに応
用した時の出力は小さい。
本発明の目的は、上述の多層構造を有する磁気抵抗効果
素子での問題を解消し、高い抵抗変化量を持つ磁気抵抗
効果素子を提供することにある。
【課題を解決するための手段】
本発明者等は、Ｆｅ／Ｃｒ多層膜を用いた素子強磁性ト
ンネル素子などの多層構造に起因する磁気抵抗効果を持
つ素子について鋭意研究を重ねた結果、これらの素子の
素子抵抗が低く、このため抵抗変化率が高くても、大き
な抵抗変化量が得られないことを明らかにし、本発明を
完成するに至った・
すなわち、Ｆ ｅ ／ Ｃｒ多層膜を用いた素子１強磁
性トンネル素子などの多層構造に起因する磁気抵抗効果
を持つ素子において、複数の磁気抵抗効果素子を直列に
連結することにより、素子全体の電気抵抗を高くした。
また、基板から同じ距離にある非磁性層を電子が複数回
通過するような素子構造とした。
ｒ作用】
本発明によれば、Ｆ ｅ ／ Ｃｒ多層膜を用いた素子
、強磁性トンネル素子などの多層構造に起因する磁気抵
抗効果を持つ素子において、複数の磁気抵抗効果素子を
直列に連結することにより、素子全体の電気抵抗を高く
シ、大きな抵抗変化量を得るようにすることができる。
また、基板から同じ距離にある非磁性層を電子が複数回
通過するような素子構造にすることにより、素子全体の
膜厚を増加させずに、素子全体の電気抵抗を高くシ、大
きな抵抗変化量を得るようにすることができる。
さらに本発明によれば、素子全体の膜厚を変化させない
ため、磁気ヘッドに用いた時の波長方向の磁界分布に対
する分解能は減少しない。INDUSTRIAL APPLICATION FIELD 1 The present invention relates to a multilayer magnetic thin film having a high magnetoresistive effect, and particularly to a magnetoresistive element suitable for a magnetic field sensor and a reproducing magnetic head used in a magnetic disk device. [Prior Art] Research is progressing on magnetic heads that use magnetoresistive effects as magnetic heads for reproduction in high-density magnetic recording. In order to put a magnetic head with high performance into practical use, it is desirable to develop a magnetic thin film with a high magnetoresistive effect.
ical Revie + Letters), Vo
l, 61. As described in No. 21.247:'-2475 pages (1988), an Fe/Cr multilayer film with a resistance change rate of nearly 50% has been reported. [Problems to be Solved by the Invention] In a magnetoresistive element having a multilayer structure such as a Fe/Cr multilayer film, when electrons move from one magnetic layer to another, that is, they pass through a nonmagnetic intermediate layer. The electrical resistance changes depending on the magnetic field. At this time, current flows in the film thickness direction. However, the thickness of the magnetic film is several 1100 nanometers or less,
The element's resistance is low, so even if the rate of resistance change is high, the amount of resistance change is small, and the output when applied to an actual magnetic field sensor or magnetic head is small. An object of the present invention is to solve the problems with the magnetoresistive element having the above-mentioned multilayer structure and to provide a magnetoresistive element having a high resistance change amount. [Means for Solving the Problems] The present inventors have conducted intensive research on elements having a magnetoresistive effect due to multilayer structures, such as ferromagnetic tunnel elements using Fe/Cr multilayer films, and have found that these The present invention was completed by clarifying that the element resistance of the element is low, so even if the resistance change rate is high, a large amount of resistance change cannot be obtained. Element 1 In an element having a magnetoresistive effect due to a multilayer structure, such as a ferromagnetic tunnel element, the electrical resistance of the entire element was increased by connecting a plurality of magnetoresistive elements in series. In addition, the device structure was such that electrons pass multiple times through the nonmagnetic layer located at the same distance from the substrate. r Effect] According to the present invention, in an element having a magnetoresistive effect due to a multilayer structure such as an element using an Fe/Cr multilayer film or a ferromagnetic tunnel element, a plurality of magnetoresistive elements are connected in series. By doing so, it is possible to increase the electrical resistance of the entire element and obtain a large amount of resistance change. In addition, by creating an element structure in which electrons pass multiple times through the nonmagnetic layer located at the same distance from the substrate, we can increase the electrical resistance of the entire element without increasing the film thickness of the entire element, resulting in large resistance changes. You can try to get the amount. Further, according to the present invention, since the film thickness of the entire element is not changed, the resolution of the magnetic field distribution in the wavelength direction when used in a magnetic head does not decrease.
【実施例１
以下に本発明の詳細な説明する。
［実施例１］
本発明の磁気抵抗効果素子の作製方法を以下の述べる。
第１図（ａ）のようにガラス基板（図示路）上に、幅１
０μｍ、厚さ１１００ｎのＣｕ膜１１を形成し、第１図
（ｂ）のように、その中央部を、イオンミリング法で加
工し、溝を形成し、電極１２、電極１３、電極１４およ
び電極１５を形成する。溝の幅は２μｍである。その溝
をレジスト等の絶縁体で埋めた後、第１図（ｃ）のよう
に、２ｐｍＸ１０ｐｍＸ高さ３００ｎｍのレジスト１６
をフォトリソグラフィによって形成する０次に、第１図
（ｄ）のように、イオンビームスパッタリング法によっ
て、膜厚３ｎｍのＦｅ層１７、膜厚ｌｎｍのＣｒ層１８
を交互に積層した多層磁性膜を形成し、さらに、素子全
体の上面の平坦化および多層磁性膜の加工した。
なお、上記イオンビームスパッタリングは以下の条件で
行った。
イオンガス・・・Ａｒ
装置内Ａｒガス圧力・・・２．５×１Ｏ−１Ｐａ蒸着用
イオンガン加速電圧・・・４００Ｖ蒸着用イオンガンイ
オン電流・・・６０ｍＡターゲット基板間距離・・・１
２７ｍｍＦ ｅ ／ Ｃｒ多層磁性膜の全体の膜厚は約
２ｏ。
ｎｍとなるようにした。また、Ｆ ｅ ／ Ｃｒ多層磁
性膜の幅は、それぞれ、４μｍ、長さは、１０μｍであ
る。さらに、その上に、第１図（ｅ）のように、Ｃｕか
らなる膜厚５００ｎｍの導電層１９を形成し、レジスト
１６で絶縁されている多層磁性膜を電気的につなげ、磁
気抵抗効果素子２ｏを完成させた。
また、比較例として、第２図に示すような磁気抵抗効果
素子も形成した。この磁気抵抗効果素子の作製法は、以
下のとおりである。これは、幅１０μｍ、厚さ１１００
ｎのＣｕからなる下部電極２１の上に、膜厚３ｎｍのＦ
ｅ層２２、膜厚１ｎｍのＣｒ層２３を交互に積層し、１
０μｍＸ１０μｍＸ２００ｎｍの多層磁性膜を形成した
。さらに、幅１０μｍ、厚さ１１００ｎのＣｕからなる
上部電極２４を形成し、磁気抵抗効果素子２５を完成さ
せた。
本発明の磁気抵抗効果素子２０および比較例の磁気抵抗
効果素子２５の素子抵抗を測定した。測定には、それぞ
れ、電極１２、電極１３．電極１４、電極１５および下
部電極２１．上部電極２４を電圧、電流端子とし、４端
子法で測定した。その結果、従来の比較例の磁気抵抗効
果素子２５の素子抵抗は、２．０ＸＩＯ−’Ωであり、
本発明の磁気抵抗効果素子２０の素子抵抗は、３．５Ｘ
１ｏ−２Ωであった。
また１本発明の磁気抵抗効果素子２０および比較例の磁
気抵抗効果素子２５の印加磁界による抵抗変化量を測定
した。測定は、室温で行った。測定結果を第３図に示す
。同図に示すように１本発明の磁気抵抗効果素子２０の
抵抗変化量３１は、比較例の磁気抵抗効果素子２５の抵
抗変化量３２の約５倍である。
以上、述べたように、Ｆ ｅ ／ Ｃｒ多層膜を用いた
素子において、基板から同じ距離にある非磁性層を電子
が複数回通過するような素子構造にすることにより、素
子全体の膜厚を増加させずに、素子全体の電気抵抗を高
くし、大きな抵抗変化量を得るようにすることができる
。素子全体の膜厚を変化させないため、磁気ヘッドに用
いた時の波長方向の磁界分布に対する分解能は減少しな
い。
［実施例２］
実施例１と同様の素子形状で、強磁性トンネル効果を用
いた磁気抵抗効果素子を作製した。素子の構造を第４図
に示す、磁性層としては、膜厚１１００ｎのＦｅ−１，
７ａｔ％Ｒｕ合金層４５および膜厚１１００ｎのＦｅ−
２，Ｏａｔ％Ｃ合金層４４を用いた。また、非磁性層４
６は、膜厚１０ｎｍのＡｌ２Ｏ，である。電極４１、導
電層４７にはＣｕを用いた。絶縁体としては、レジスト
４２、レジスト４３を用いた。
ヘルムホルツコイルを用いて、磁気抵抗効果素子に磁界
を印加し、電気抵抗の変化を調べた。磁界の強さによっ
て、素子の電気抵抗が変化した。
電気抵抗の変化する原因は以下のように考えられる。
磁化曲線の測定より、Ｆｅ−１，７ａｔ％Ｒｕ合金層の
保磁力は２５０ｅ、Ｆｅ−２，Ｏａｔ％Ｃ合金層の保磁
力は８０ｅであることがわかった。
磁界の大きさを変化させた場合、８０ｅのところで、Ｆ
ｅ−２，Ｏａｔ％Ｃ合金層の磁化の向きは変化するが、
Ｆｅ−１，７ａｔ％Ｒｕ合金層の磁化の向きは変化しな
い。２５０ｅ以上の磁界を印加した時に、Ｆｅ−１，７
ａｔ％Ｒｕ合金層の磁化の向きは変化する。従って、±
８〜２５０ｅの磁界では、Ｆｅ−２，Ｏａｔ％Ｃ合金層
の磁化の向きとＦｅ−１，７ａｔ％Ｒｕ合金層の磁化の
向きは、互いに１反平行である。また、この磁界の範囲
以外では、磁化の向きは平行である。Ａｌ□ｏ□層をト
ンネル電流がながれる場合、上記磁性層の磁化の向きが
、互いに、反平行である時より、磁化の向きが平行であ
る時の方が、コンダクタンスは高い。このため、磁界の
大きさによって、素子の電気抵抗が変化するものと考え
られる。
また、電子がＡ１□Ｏ１層を一回しか通らない構造の磁
気抵抗効果素子の電気抵抗変化を測定したところ、本発
明の磁気抵抗効果素子の抵抗変化量の１／２の変化量を
示した。以上述べたように、基板から同じ距離にある非
磁性層を電子が複数回通過するような素子構造にするこ
とにより、素子全体の膜厚を増加させずに、素子全体の
電気抵抗を高くシ、大きな抵抗変化量を得るようにする
ことができる。素子全体の膜厚を変化させないため、磁
気ヘッドに用いた時の波長方向の磁界分布に対する分解
能は減少しない。
［実施例３］
強磁性トンネル効果を用いた磁気抵抗効果素子を作製し
た。素子の断面構造を第５図に示す、基板５１としては
、コーニング社製ホトセラム基板を用いた。絶縁体５２
としては、樹脂を用いた。
導電層５３、導電層５４には、Ｃｕを用いた。磁性層と
しては、膜厚１１００ｎのＦｅ−２，Ｏａｔ％Ｃ合金層
５５および膜厚１１００ｎのＦｅ−１，７ａｔ％Ｒｕ合
金層５６を用いた。また、非磁性層は膜厚１０ｎｍのＡ
１□０１層５７である。
第５図に示すように、本実施例の磁気抵抗効果素子は、
複数の強磁性トンネル素子が直列に連結している。この
ため、素子全体の電気抵抗は大きくなるが、抵抗変化量
は大きくなり、高感度の磁界センサとなる。
強磁性トンネル素子の直列連結は、どのような形状で行
われても良いが、素子が大きくなると、磁界分布に対す
る分解能が減少し、磁気ヘッドには向かなくなる。しか
し、磁界分布に対する分解能を要求しない磁界センサに
は、本実施例のような多数の強磁性トンネル素子が直列
に連結した磁気抵抗効果素子が好ましい。
【発明の効果】
以上詳細に説明したごとく、Ｆ ｅ ／ Ｃｒ多層膜を
用いた素子、強磁性トンネル素子などの多層構造に起因
する磁気抵抗効果を持つ素子において、複数の磁気抵抗
効果素子を直列に連結することにより、素子全体の電気
抵抗を高くし、大きな抵抗変化量を得るようにすること
ができる。また、基板から同じ距離にある非磁性層を電
子が複数回通過するような素子構造にすることにより、
素子全体の膜厚を増加させずに、素子全体の電気抵抗を
高くし、大きな抵抗変化量を得るようにすることができ
る。素子全体の膜厚を変化させないため、磁気ヘッドに
用いた時の波長方向の磁界分布に対する分解能は減少し
ない。Example 1 The present invention will be described in detail below. [Example 1] A method for manufacturing the magnetoresistive element of the present invention will be described below. As shown in Figure 1(a), on a glass substrate (path shown),
A Cu film 11 with a thickness of 0 μm and a thickness of 1100 nm is formed, and as shown in FIG. form 15. The width of the groove is 2 μm. After filling the groove with an insulator such as a resist, as shown in FIG.
Next, as shown in FIG. 1(d), an Fe layer 17 with a thickness of 3 nm and a Cr layer 18 with a thickness of 1 nm are formed by an ion beam sputtering method.
A multilayer magnetic film was formed by alternately laminating layers, and the upper surface of the entire device was flattened and the multilayer magnetic film was processed. Note that the above ion beam sputtering was performed under the following conditions. Ion gas...Ar Ar gas pressure in the device...2.5 x 1O-1Pa Ion gun acceleration voltage for deposition...400V Ion gun ion current for deposition...60mA Distance between target substrates...1
The total thickness of the 27mm Fe/Cr multilayer magnetic film is approximately 2o. nm. Further, each of the Fe/Cr multilayer magnetic films has a width of 4 μm and a length of 10 μm. Furthermore, as shown in FIG. 1(e), a conductive layer 19 made of Cu and having a thickness of 500 nm is formed thereon, and the multilayer magnetic film insulated by the resist 16 is electrically connected to form a magnetoresistive effect element. Completed 2o. Furthermore, as a comparative example, a magnetoresistive element as shown in FIG. 2 was also formed. The method for manufacturing this magnetoresistive element is as follows. This has a width of 10 μm and a thickness of 1100 μm.
On the lower electrode 21 made of Cu with a thickness of 3 nm,
E layers 22 and Cr layers 23 with a film thickness of 1 nm are alternately laminated, and 1
A multilayer magnetic film of 0 μm×10 μm×200 nm was formed. Further, an upper electrode 24 made of Cu and having a width of 10 μm and a thickness of 1100 nm was formed to complete the magnetoresistive element 25. The element resistances of the magnetoresistive element 20 of the present invention and the magnetoresistive element 25 of the comparative example were measured. For the measurement, electrodes 12, 13. Electrode 14, electrode 15 and lower electrode 21. The upper electrode 24 was used as a voltage and current terminal, and measurements were made using a four-terminal method. As a result, the element resistance of the conventional magnetoresistive element 25 of the comparative example was 2.0XIO-'Ω,
The element resistance of the magnetoresistive element 20 of the present invention is 3.5X
It was 10-2Ω. In addition, the amount of resistance change due to the applied magnetic field of the magnetoresistive element 20 of the present invention and the magnetoresistive element 25 of the comparative example was measured. Measurements were performed at room temperature. The measurement results are shown in Figure 3. As shown in the figure, the amount of resistance change 31 of the magnetoresistive element 20 of the present invention is about five times the amount of resistance change 32 of the magnetoresistive element 25 of the comparative example. As mentioned above, in an element using a Fe/Cr multilayer film, by creating an element structure in which electrons pass multiple times through the nonmagnetic layer located at the same distance from the substrate, the overall film thickness of the element can be reduced. It is possible to increase the electrical resistance of the entire element and obtain a large amount of resistance change without increasing it. Since the film thickness of the entire element does not change, the resolution of the magnetic field distribution in the wavelength direction when used in a magnetic head does not decrease. [Example 2] A magnetoresistive element using a ferromagnetic tunneling effect was manufactured with the same element shape as in Example 1. The structure of the device is shown in FIG. 4. The magnetic layer is made of Fe-1, 1100 nm thick,
7at% Ru alloy layer 45 and 1100n thick Fe-
2. Oat%C alloy layer 44 was used. In addition, the nonmagnetic layer 4
6 is Al2O with a film thickness of 10 nm. Cu was used for the electrode 41 and the conductive layer 47. Resist 42 and resist 43 were used as the insulators. A magnetic field was applied to the magnetoresistive element using a Helmholtz coil, and changes in electrical resistance were investigated. The electrical resistance of the element changed depending on the strength of the magnetic field. The cause of the change in electrical resistance is thought to be as follows. Measurement of the magnetization curve revealed that the coercive force of the Fe-1, 7 at% Ru alloy layer was 250e, and the coercive force of the Fe-2, Oat% C alloy layer was 80e. When the magnitude of the magnetic field is changed, at 80e, F
e-2, Oat% Although the direction of magnetization of the C alloy layer changes,
The magnetization direction of the Fe-1,7at%Ru alloy layer does not change. When a magnetic field of 250e or more is applied, Fe-1,7
The direction of magnetization of the at% Ru alloy layer changes. Therefore, ±
In a magnetic field of 8 to 250 e, the magnetization direction of the Fe-2, Oat% C alloy layer and the magnetization direction of the Fe-1, 7 at% Ru alloy layer are 1 antiparallel to each other. Further, outside the range of this magnetic field, the direction of magnetization is parallel. When a tunneling current flows through the Al□o□ layer, the conductance is higher when the magnetization directions of the magnetic layers are parallel to each other than when the magnetization directions are antiparallel to each other. Therefore, it is thought that the electrical resistance of the element changes depending on the magnitude of the magnetic field. Furthermore, when we measured the change in electrical resistance of a magnetoresistive element with a structure in which electrons pass through the A1□O1 layer only once, we found that the change in resistance was 1/2 of that of the magnetoresistive element of the present invention. . As mentioned above, by creating an element structure in which electrons pass multiple times through the nonmagnetic layer located at the same distance from the substrate, the electrical resistance of the entire element can be increased without increasing the film thickness of the entire element. , it is possible to obtain a large amount of resistance change. Since the film thickness of the entire element does not change, the resolution of the magnetic field distribution in the wavelength direction when used in a magnetic head does not decrease. [Example 3] A magnetoresistive element using ferromagnetic tunneling effect was manufactured. As the substrate 51 whose cross-sectional structure of the element is shown in FIG. 5, a photoceram substrate manufactured by Corning was used. Insulator 52
For this purpose, resin was used. Cu was used for the conductive layer 53 and the conductive layer 54. As the magnetic layer, an Fe-2, Oat% C alloy layer 55 with a thickness of 1100 nm and an Fe-1, 7 at% Ru alloy layer 56 with a thickness of 1100 nm were used. In addition, the nonmagnetic layer has a film thickness of 10 nm.
1□01 layer 57. As shown in FIG. 5, the magnetoresistive element of this example is
A plurality of ferromagnetic tunnel elements are connected in series. Therefore, although the electrical resistance of the entire element increases, the amount of change in resistance increases, resulting in a highly sensitive magnetic field sensor. Ferromagnetic tunneling elements may be connected in series in any shape, but as the elements become larger, the resolution of the magnetic field distribution decreases, making them unsuitable for magnetic heads. However, for a magnetic field sensor that does not require resolution for magnetic field distribution, a magnetoresistive element in which a large number of ferromagnetic tunnel elements are connected in series as in this embodiment is preferable. Effects of the Invention As explained in detail above, in an element having a magnetoresistive effect due to a multilayer structure such as an element using an Fe/Cr multilayer film or a ferromagnetic tunnel element, it is possible to connect a plurality of magnetoresistive elements in series. By connecting it to , it is possible to increase the electrical resistance of the entire element and obtain a large amount of resistance change. In addition, by creating an element structure in which electrons pass multiple times through the nonmagnetic layer located at the same distance from the substrate,
The electrical resistance of the entire element can be increased and a large amount of resistance change can be obtained without increasing the film thickness of the entire element. Since the film thickness of the entire element does not change, the resolution of the magnetic field distribution in the wavelength direction when used in a magnetic head does not decrease.
第１図は本発明のＦ ｅ ／ Ｃｒ多層膜を用いた磁気
抵抗効果素子の作製工程を示す斜視図５第２図は比較例
とした従来のＦ ｅ ／ Ｃｒ多層膜を用いた磁気抵抗
効果素子の構造を示す斜視図、第３図は本発明および比
較例の磁気抵抗効果素子の磁界による抵抗変化を示すグ
ラフ、第４図は本発明の強磁性トンネル素子を用いた磁
気抵抗効果素子の構造を示す斜視図、第５図は本発明の
強磁性トンネル素子を用いた磁気抵抗効果素子の構造を
示す断面図である。
符号の説明
１ｌ−Ｃｕ膜、１２．１３．１４．１５−・・電極１６
・・・レジスト、１７・・Ｆｅ層、１８・Ｃｒ層１９・
・・導電層、２０・・・磁気抵抗効果素子２１・・・下
部電極、２２・・・Ｆｅ層、２３・・・Ｃｒ層２４・・
・上部電極、２５・・・磁気抵抗効果素子３１・・・磁
気抵抗効果素子２ｏの抵抗変化量３２・・・磁気抵抗効
果素子２５の抵抗変化量４１・・・電極、４２．４３・
・レジスト４４＝Ｆｅ−２，Ｏａｔ％Ｃ合金層
４５−Ｆｅ−１，７ａｔ％Ｒｕ合金層
４６・・・非磁性層、４７・・・導電層５１・・・基板
、５２・・・絶縁体、５３．５４・・・導電層５５＝Ｆ
ｅ−２，Ｏａ ｔ％Ｃ合金層
５６＝Ｆｅ−１，７ａｔ％Ｒｕ合金層
（Ｃ）
／１
ｃｂFigure 1 is a perspective view showing the manufacturing process of a magnetoresistive element using the Fe/Cr multilayer film of the present invention. Figure 2 is a comparative example of the magnetoresistive effect using a conventional Fe/Cr multilayer film. A perspective view showing the structure of the device, FIG. 3 is a graph showing resistance changes due to magnetic fields of magnetoresistive elements of the present invention and comparative examples, and FIG. 4 is a graph of a magnetoresistive element using the ferromagnetic tunnel element of the present invention. FIG. 5 is a perspective view showing the structure, and FIG. 5 is a sectional view showing the structure of a magnetoresistive element using the ferromagnetic tunnel element of the present invention. Explanation of symbols 1l-Cu film, 12.13.14.15--electrode 16
...Resist, 17..Fe layer, 18.Cr layer 19.
... Conductive layer, 20... Magnetoresistive element 21... Lower electrode, 22... Fe layer, 23... Cr layer 24...
- Upper electrode, 25... Magnetoresistive element 31... Resistance change amount 32 of magnetoresistive element 2o... Resistance change amount 41 of magnetoresistive element 25... Electrode, 42.43.
・Resist 44 = Fe-2, Oat% C alloy layer 45 - Fe-1, 7at% Ru alloy layer 46... Nonmagnetic layer, 47... Conductive layer 51... Substrate, 52... Insulator , 53.54...conductive layer 55=F
e-2, Oat% C alloy layer 56 = Fe-1,7 at% Ru alloy layer (C) /1 cb
Claims (1)
効果素子において、複数の磁気抵抗効果素子が直列に連
結していることを特徴とする磁気抵抗効果素子。 ２、多層構造に起因する磁気抵抗効果を有する磁気抵抗
効果素子において、基板から同じ距離にある非磁性層を
電子が複数回通過することを特徴とする磁気抵抗効果素
子。[Scope of Claims] 1. A magnetoresistive element having a magnetoresistive effect due to a multilayer structure, characterized in that a plurality of magnetoresistive elements are connected in series. 2. A magnetoresistive element having a magnetoresistive effect due to a multilayer structure, characterized in that electrons pass multiple times through a nonmagnetic layer located at the same distance from a substrate.
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24234190A JPH04123306A (en) | 1990-09-14 | 1990-09-14 | Magneto-resistance effect element |
| US07/710,775 US5390061A (en) | 1990-06-08 | 1991-06-05 | Multilayer magnetoresistance effect-type magnetic head |
| US08/328,090 US5726837A (en) | 1990-06-08 | 1994-10-24 | Multilayer magnetoresistance effect-type magnetic head |
| US08/626,333 US6011674A (en) | 1990-06-08 | 1996-04-02 | Magnetoresistance effect multilayer film with ferromagnetic film sublayers of different ferromagnetic material compositions |
| US09/468,309 US6278593B1 (en) | 1990-06-08 | 1999-12-21 | Magnetoresistance effect elements and magnetic heads using the tunneling magnetoresistive effect |
| US09/931,897 US6483677B2 (en) | 1990-06-08 | 2001-08-20 | Magnetic disk apparatus including magnetic head having multilayered reproducing element using tunneling effect |
| US10/270,120 US6687099B2 (en) | 1990-06-08 | 2002-10-15 | Magnetic head with conductors formed on endlayers of a multilayer film having magnetic layer coercive force difference |
| US10/700,500 US7054120B2 (en) | 1990-06-08 | 2003-11-05 | Magnetic apparatus with perpendicular recording medium and head having multilayered reproducing element using tunneling effect |
| US11/371,244 US7159303B2 (en) | 1990-06-08 | 2006-03-09 | Method for manufacturing magnetic head device |
| US11/543,210 US7292417B2 (en) | 1990-06-08 | 2006-10-05 | Magnetic apparatus with perpendicular recording medium and head having multilayered reproducing element using tunneling effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24234190A JPH04123306A (en) | 1990-09-14 | 1990-09-14 | Magneto-resistance effect element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04123306A true JPH04123306A (en) | 1992-04-23 |
Family
ID=17087757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24234190A Pending JPH04123306A (en) | 1990-06-08 | 1990-09-14 | Magneto-resistance effect element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04123306A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0943327A (en) * | 1995-08-03 | 1997-02-14 | Nec Corp | Magneto-resistive current sensor |
| WO2000003387A1 (en) * | 1998-07-08 | 2000-01-20 | Fujitsu Limited | Magnetic sensor |
| US6707648B2 (en) * | 2000-05-19 | 2004-03-16 | Nih N University | Magnetic device, magnetic head and magnetic adjustment method |
| JP2015078906A (en) * | 2013-10-17 | 2015-04-23 | 三菱電機株式会社 | Magnetic sensor and manufacturing method thereof |
-
1990
- 1990-09-14 JP JP24234190A patent/JPH04123306A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0943327A (en) * | 1995-08-03 | 1997-02-14 | Nec Corp | Magneto-resistive current sensor |
| WO2000003387A1 (en) * | 1998-07-08 | 2000-01-20 | Fujitsu Limited | Magnetic sensor |
| US6441611B2 (en) | 1998-07-08 | 2002-08-27 | Fujitsu Limited | Magnetic sensor having a GMR layer |
| US6707648B2 (en) * | 2000-05-19 | 2004-03-16 | Nih N University | Magnetic device, magnetic head and magnetic adjustment method |
| JP2015078906A (en) * | 2013-10-17 | 2015-04-23 | 三菱電機株式会社 | Magnetic sensor and manufacturing method thereof |
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