JPH04119276A - Vacuum valve - Google Patents

Vacuum valve

Info

Publication number
JPH04119276A
JPH04119276A JP23770190A JP23770190A JPH04119276A JP H04119276 A JPH04119276 A JP H04119276A JP 23770190 A JP23770190 A JP 23770190A JP 23770190 A JP23770190 A JP 23770190A JP H04119276 A JPH04119276 A JP H04119276A
Authority
JP
Japan
Prior art keywords
gas
gate valve
valve
main body
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23770190A
Other languages
Japanese (ja)
Inventor
Katsuhiro Suma
須磨 克博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP23770190A priority Critical patent/JPH04119276A/en
Publication of JPH04119276A publication Critical patent/JPH04119276A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To quickly purge gas in a vacuum valve and exhaust by providing a main body having an opening part, a holding plate to close the opening part from inside the main body, a construction to move the holding plate, and a valve on the main body. CONSTITUTION:After completion of purge, in the condition of opening valves 7a, 7b to flow gas, or in the condition of closing the valves not to flow gas, a handle 6 is rotated, a holding plate 3 is moved to open a gate valve, and a sample is transported to a reaction chamber. After completion of transport, the gate valve is closed, according to using condition, the valves 7a, 7b are closed to stop gas flow, or the valves 7a, 7b are opened to flow gas. In case of vacuum transport, after charging a sample into a prechamber, the cover of the prechamber is closed, gas flow into the prechamber and the gate valve is stopped and evacuated. At this time, compared with the past example, conductance becomes large by the portion of an exhaust port in the gate valve main body, and the inside of the gate valve and the prechamber can be quickly exhausted.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、真空バルブに関し、特に反応室内で使用する
高純度ガス以外の不純物を、反応室内に極力混入させな
いようにしたものに関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a vacuum valve, and particularly to a vacuum valve that is designed to prevent impurities other than the high-purity gas used in the reaction chamber from entering the reaction chamber as much as possible.

〔従来の技術〕[Conventional technology]

真空バルブは真空系を構成する部品の中ても基本的なも
のの一つであり、真空槽と大気とを分離するため、また
高純度ガスで満たされた空間と大気とを分離するために
必要なものである。
A vacuum valve is one of the basic components of a vacuum system, and is necessary to separate a vacuum chamber from the atmosphere, and a space filled with high-purity gas from the atmosphere. It is something.

図2は、その中でもゲートバルブと言われる従来例を示
した構成図である。図2において、(1)はゲートバル
ブ本体、(2a )(2b)は本体の側面に設けられた
フランジ、(3)は本体を内側から開口部をふさぐ押え
板を含む部分(以下押え部という)、(4)は本体内側
と押え部を気密シールするシール材であるOリング、(
5)は押え部に接続されたシャフト、(6)はシャフト
を回すためのハンドルである。
FIG. 2 is a configuration diagram showing a conventional example called a gate valve. In Fig. 2, (1) is the gate valve main body, (2a) and (2b) are flanges provided on the side of the main body, and (3) is the part including the holding plate that closes the opening of the main body from the inside (hereinafter referred to as the holding part). ), (4) is an O-ring that is a sealing material that airtightly seals the inside of the main body and the presser part, (
5) is a shaft connected to the presser part, and (6) is a handle for turning the shaft.

次に動作について説明する。第2図のように閉じられた
状態のゲートバルブにおいて、ハンドル(6)を回すこ
とにより、シャフト(5)を通して、本体内部と気密接
続している押え部(3)を密着部分と垂直な方向に縮ま
せ、機密接続を破る。さらに、ハンドル(6)を回転さ
せるとシャフト(5)を通して押え部を開口部が完全に
見通せるように移動させて、ゲートバルブを開く。
Next, the operation will be explained. When the gate valve is closed as shown in Figure 2, by turning the handle (6), the holding part (3), which is airtightly connected to the inside of the main body, is inserted through the shaft (5) in a direction perpendicular to the contact part. shrink and break confidential connections. Furthermore, when the handle (6) is rotated, the presser part is moved through the shaft (5) so that the opening is completely visible, and the gate valve is opened.

第3図はゲートバルブが完全に開いた状態を示す図であ
る。
FIG. 3 is a diagram showing the gate valve in a completely open state.

ゲートバルブを閉じる場合は、ハンドル(6)を逆回転
させることにより、シャフト(5)を通して押え部(3
)を開口部が完全に見通せなくなるまで移動させる。さ
らにハンドル(6)を逆回転することによって、シャフ
ト(5)を通して押え部を、密着する部分と垂直な方向
に押し広げ、機密接続を得る。
To close the gate valve, rotate the handle (6) in the opposite direction to insert the presser part (3) through the shaft (5).
) until the opening can no longer be seen completely. By further rotating the handle (6) in the opposite direction, the hold-down part is spread out through the shaft (5) in a direction perpendicular to the area to be fitted and a sealed connection is obtained.

第4図は、ゲートバルブを用いた半導体製造装置の構成
図であり、(8)は反応室、(9)はゲートバルブ、0
0)は前室である。
FIG. 4 is a block diagram of a semiconductor manufacturing apparatus using a gate valve, in which (8) is a reaction chamber, (9) is a gate valve, and
0) is the front chamber.

半導体試料を反応室で処理する場合に、減圧下、常圧下
、または、加圧下で行なわれる。一般に反応室を真空に
する場合、大気がゲートバルブを閉じようとする向きに
、ゲートバルブを設置する。
When a semiconductor sample is processed in a reaction chamber, it is carried out under reduced pressure, normal pressure, or increased pressure. Generally, when creating a vacuum in a reaction chamber, the gate valve is installed in the direction in which the atmosphere tends to close the gate valve.

すなわち、反応室と第2図、第3図のフランジ(2b)
とを接続する半導体試料の反応室への搬送方法も、上記
の3つの状態下て行なわれる。一般に減圧下での処理を
必要としない場合は、常圧搬送が行われる。さらに前室
か真空引きてきる構造が設けられていなければ、前室て
ガスバージをすることになる。半導体試料を前室に設置
する時に、前室に外部ガスが入ると共に、半導体試料に
吸着している外部ガスや水分なとか、前室およびゲート
バルブ内部へ侵入する。その後ガスパージを行うが、ゲ
ートバルブ内のパージは本体(1)と押え部(3)との
すきま、あるいは押え部(3)に設けられた開口部を通
して行われるが、ガスの流れが一方向とはならないため
に充分にパージされることはない。
That is, the reaction chamber and the flange (2b) in FIGS. 2 and 3
The method of transporting the semiconductor sample to the reaction chamber is also carried out under the above three conditions. Generally, if processing under reduced pressure is not required, normal pressure conveyance is performed. Furthermore, if the front chamber is not equipped with a structure to draw a vacuum, the front chamber will be used as a gas barge. When a semiconductor sample is placed in the front chamber, external gas enters the front chamber, and external gases and moisture adsorbed on the semiconductor sample also enter the front chamber and the inside of the gate valve. After that, gas purge is performed, and the purge inside the gate valve is performed through the gap between the main body (1) and the holding part (3), or through the opening provided in the holding part (3), but the gas flow is unidirectional. It is not purged enough because it does not work.

このような状態でゲートバルブを開き、半導体試料を搬
送すれば、反応室内部に外部ガスや水分が混入すること
になる。前室が真空引きかてきる構造になっており、真
空搬送する場合も、ゲートバルブ内の排気は、本体(1
)と押え部(3)とのすきま、あるいは押え部(3)に
設けられた開口部を通して行われるが、コンダクタンス
Cが小さいために、排気されに<<、充分に排気される
には長時間かかる。このことはスルーブツトを下げるこ
とになる。
If the gate valve is opened in this state and the semiconductor sample is transported, external gas and moisture will enter the reaction chamber. The front chamber is designed to be evacuated, and even when transferring under vacuum, the exhaust inside the gate valve is connected to the main body (1
) and the presser part (3), or through the opening provided in the presser part (3), but because the conductance C is small, it takes a long time for sufficient exhaustion to occur. It takes. This will lower the throughput.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

前記従来の真空バルブは以上のように、本体(1)と押
え部(3)のすきま、あるいは押え部(3)に設けられ
た開口部より、ガスパージあるいは、排気が行なわれる
が、充分なパージや排気を行うことができず、反応室内
で使用する高純度ガス以外の不純物が、反応室内に入る
、また、スルーブツトを下げる制題があった。
As described above, in the conventional vacuum valve, gas purging or exhaust is performed through the gap between the main body (1) and the holding part (3) or the opening provided in the holding part (3). It is not possible to carry out air purification or exhaust gas, allowing impurities other than the high-purity gas used in the reaction chamber to enter the reaction chamber, and also reducing throughput.

この発明は上記のような問題点を解決するためになされ
たもので、真空バルブ内部をすばやく、ガスパージおよ
び排気ができる真空バルブを提供することを目的として
いる。
This invention was made to solve the above-mentioned problems, and an object of the present invention is to provide a vacuum valve that can quickly purge and exhaust the inside of the vacuum valve.

〔課題を解決するための手段〕[Means to solve the problem]

本発明に係る真空バルブは、開口部のある本体と、本体
の内側から少なくとも1つの開口部をふさぐ押え板と、
押え板を動かす構造と、本体にバルブとを備えたちので
ある。
The vacuum valve according to the present invention includes a main body having an opening, a presser plate that closes at least one opening from the inside of the main body,
It has a structure that moves the presser plate and a valve in the main body.

〔作用〕[Effect]

本発明によれば、真空バルブ内部に入ったガスをすばや
くガスパージあるいは、排気する構造を含む。このため
に、本真空バルブと接続された反応室内に、反応室内で
使用する高純度ガス以外の不純物が、多量に混入するこ
とはない。
According to the present invention, a structure is included that quickly purges or exhausts gas that has entered the inside of the vacuum valve. For this reason, a large amount of impurities other than the high-purity gas used in the reaction chamber will not be mixed into the reaction chamber connected to the vacuum valve.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第1図において、(1)はゲートバルブ本体、(2a)
(2b)は本体の側面に設けられたフランジ、(3)は
押え部、(4)は本体内側と押え部を機密シールするシ
ール材であるOリング、(5)は押え部に接続されたシ
 ャフト、(6)はシャフトを回すためのハンドル、(
7a)はガスを導するためのバルブ、(7b)は排気口
を開閉するバルブである。
In Figure 1, (1) is the gate valve body, (2a)
(2b) is a flange provided on the side of the main body, (3) is a presser part, (4) is an O-ring that is a sealing material that tightly seals the inside of the main body and the presser part, and (5) is connected to the presser part. The shaft, (6) is the handle for turning the shaft, (
7a) is a valve for introducing gas, and (7b) is a valve for opening and closing the exhaust port.

次に、本発明に係る真空バルブの動作を説明する。真空
バルブは真空系を構成する部品であるため、第4図に示
した半導体製造装置に組み込まれた形で使用される。ゲ
ートバルブは、(2b)と反応室(8)が接続されてい
る。試料を反応室て処理する場合、減圧下、常圧下、加
圧下の3つの圧力状態で行なわれる。搬送方法も上記の
3つの状態で行うことが可能である。前室はガスの導入
構造と、排気可能な構造を有しているとする。試料を常
圧搬送する場合、前室およびゲートバルブに高純度ガス
を流しながら試料を前室に入れる。次に前室のふたを閉
じ、ガスバージを行う。このときゲートバルブの内部か
らフランジ(2a)側の開口部を通してガスが前室へ流
れるものと、排気口から流れるものかある。ゲートバル
ブの開口部より流れる出すガスにより、試料を前室に入
れる時に入った外部ガスがゲートバルブ内に侵入しにく
くなると共に、内部侵入したガスは排気口から排気され
る。
Next, the operation of the vacuum valve according to the present invention will be explained. Since the vacuum valve is a part of the vacuum system, it is used as a part of the semiconductor manufacturing apparatus shown in FIG. The gate valve (2b) and the reaction chamber (8) are connected. When a sample is processed in a reaction chamber, it is processed under three pressure conditions: reduced pressure, normal pressure, and increased pressure. The transportation method can also be carried out in the three states mentioned above. It is assumed that the front chamber has a gas introduction structure and a structure capable of exhausting gas. When transporting a sample under normal pressure, the sample is introduced into the front chamber while flowing high-purity gas through the front chamber and the gate valve. Next, close the lid of the front chamber and perform a gas purge. At this time, gas flows into the front chamber from the inside of the gate valve through the opening on the flange (2a) side, and gas flows through the exhaust port. The gas flowing out from the opening of the gate valve makes it difficult for the external gas that entered the sample to enter the front chamber to enter the gate valve, and the gas that entered inside is exhausted from the exhaust port.

パージ終了後、バルブ(7a)(7b)を開けてガスを
流したまま、あるいは、閉じてガスを流さずに、ハンド
ル(6)を回し、押え部(3)を移動させゲートバルブ
を開き、反応室へ試料を搬送する。搬送終了後ゲートバ
ルブを閉じ、使用状況にあわせて、バルブ(7a)(7
b)を閉じ、ガスを止めるか、またはバルブ(7a)(
7b)を開いたまま、ガスを流しておく。また真空搬送
する場合、前室に試料を入れたあと、前室のふたを閉じ
、前室およびゲートバルブ内に流すガスを止めて、真空
引きをする。このとき従来例に比べて、ゲートバルブ本
体に排気口を有している部だけコンダクタンスが大きく
なり、ゲートバルブ内および前室内をすばやく排気する
ことが可能となる。
After the purge is completed, open the valves (7a) and (7b) and keep the gas flowing, or close them and keep the gas flowing, turn the handle (6), move the presser part (3), and open the gate valve. Transport the sample to the reaction chamber. After the transfer is complete, close the gate valve and close the valve (7a) (7a) according to the usage situation.
b) and turn off the gas or valve (7a) (
Leave 7b) open and let the gas flow. When transferring under vacuum, after placing the sample in the front chamber, close the lid of the front chamber, stop the gas flowing into the front chamber and the gate valve, and draw a vacuum. At this time, compared to the conventional example, the conductance is increased only in the portion of the gate valve body having the exhaust port, making it possible to quickly exhaust the inside of the gate valve and the front chamber.

なお上記実施例では押え部とバルブ本体の内部の機密接
続が1つであるゲートバルブ部の例を示したが、機密接
続が2ケ所のゲートバルブでもよく、すべてのゲートバ
ルブにも適用できる。また上記の例ではハンドル側がガ
スの導入用バルブ、本体開口部側が排気用バルブを設け
たものを示したが、どちらを導入用としてもかまわない
。またバルブの部は導入用、排気用それぞれlケの場合
を示したが、いくつでもかまわない。また機密接続が1
つである場合には、ガス導入用のバルブのみて、排気口
はバルブ本体の開口部だけでもかまわない。またガス導
入側にバリアプルリークバルブを備えれば、ゲートバル
ブをベータアウトする場合に、常圧または加圧下におけ
るガスを流しながら行なう方法と、真空下で行なう方法
と、少滴量のガスを流しながら減圧下で行なう方法の3
つの方法を使用することが可能であり、効果的に利用す
ることが、すばやくベークアウトできる。
In the above embodiment, an example of a gate valve part is shown in which there is one sealed connection between the presser part and the inside of the valve body, but a gate valve with two sealed connections may be used, and the present invention can be applied to all gate valves. Further, in the above example, the handle side is provided with a gas introduction valve, and the main body opening side is provided with an exhaust valve, but either may be used for introduction. Furthermore, although the case is shown in which there are one valve section each for introduction and exhaust, it does not matter how many. Also, the confidential connection is 1
In this case, the valve for introducing gas may be used only, and the exhaust port may be provided only through an opening in the valve body. In addition, if a barrier pull leak valve is installed on the gas inlet side, when beta-outing the gate valve, there are two methods: one with gas flowing under normal or pressurized conditions, one with vacuum, and one with a small drop of gas. Method 3 of performing under reduced pressure while flowing
Two methods are available and can be used effectively to quickly bake out.

〔発明の効果〕 以上のように、本発明によれば真空バルブは本体に、バ
ルブを備えることにより、真空バルブ内部をすばやく、
ガスバージまた排気ができ、反応室内で使用する高純度
ガス以外の不純物か反応室内に極力混入することを防ぐ
効果がある。
[Effects of the Invention] As described above, according to the present invention, the vacuum valve has a valve in its main body, so that the inside of the vacuum valve can be quickly accessed.
A gas barge or exhaust can be used, which has the effect of preventing impurities other than the high-purity gas used in the reaction chamber from entering the reaction chamber as much as possible.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明に係る真空バルブの一例を示す構成図
、第2図は、従来の真空バルブの第1図に相等する図、
第3図は、従来の真空バルブが開いた場合の図、第4図
は、従来の半導体製造装置の一例を示す構成図である。 図において、(1)は真空バルブ本体、(2a) (2
b)はフランジ、(3)は押え部、(4)はシール材で
あるOリング、(5)はシャフト、(6)はハンドルで
ある。 なお、各図中同一符号は同−又は相当部分を示す。
FIG. 1 is a configuration diagram showing an example of a vacuum valve according to the present invention, and FIG. 2 is a diagram equivalent to FIG. 1 of a conventional vacuum valve.
FIG. 3 is a diagram when a conventional vacuum valve is opened, and FIG. 4 is a configuration diagram showing an example of a conventional semiconductor manufacturing apparatus. In the figure, (1) is the vacuum valve body, (2a) (2
b) is a flange, (3) is a holding part, (4) is an O-ring which is a sealing material, (5) is a shaft, and (6) is a handle. Note that the same reference numerals in each figure indicate the same or corresponding parts.

Claims (3)

【特許請求の範囲】[Claims] (1)開口部のある本体と、前記本体の内側から開口部
をふさぐ押え板と、前記押え板を動かす構造と、前記本
体にバルブを備えた真空バルブ。
(1) A vacuum valve including a main body with an opening, a presser plate that closes the opening from the inside of the main body, a structure for moving the presser plate, and a valve in the main body.
(2)前記真空バルブは、前記本体と前記押え板とが1
ケ所で機密接続される 特許請求の範囲第1項記載の真空バルブ。
(2) In the vacuum valve, the main body and the presser plate are one part.
A vacuum valve according to claim 1, which is connected in a sealed manner at one point.
(3)前記真空バルブは、前記本体と前記押え板とが2
ケ所で機密接続される 特許請求の範囲第1項記載の真空バルブ。
(3) In the vacuum valve, the main body and the presser plate are
A vacuum valve according to claim 1, which is connected in a sealed manner at one point.
JP23770190A 1990-09-06 1990-09-06 Vacuum valve Pending JPH04119276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23770190A JPH04119276A (en) 1990-09-06 1990-09-06 Vacuum valve

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23770190A JPH04119276A (en) 1990-09-06 1990-09-06 Vacuum valve

Publications (1)

Publication Number Publication Date
JPH04119276A true JPH04119276A (en) 1992-04-20

Family

ID=17019229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23770190A Pending JPH04119276A (en) 1990-09-06 1990-09-06 Vacuum valve

Country Status (1)

Country Link
JP (1) JPH04119276A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5011382B2 (en) * 2007-05-08 2012-08-29 東京エレクトロン株式会社 Valve and processing apparatus provided with the valve
JP2015032757A (en) * 2013-08-05 2015-02-16 東京エレクトロン株式会社 Ultraviolet irradiation device, and substrate processing method
WO2023087249A1 (en) * 2021-11-19 2023-05-25 富准精密模具(嘉善)有限公司 Vacuum switching valve and suction system using vacuum switching valve

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5011382B2 (en) * 2007-05-08 2012-08-29 東京エレクトロン株式会社 Valve and processing apparatus provided with the valve
JP2015032757A (en) * 2013-08-05 2015-02-16 東京エレクトロン株式会社 Ultraviolet irradiation device, and substrate processing method
WO2023087249A1 (en) * 2021-11-19 2023-05-25 富准精密模具(嘉善)有限公司 Vacuum switching valve and suction system using vacuum switching valve

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