JPH04116141U - Package cage for storing semiconductor elements - Google Patents

Abstract

(57) [Summary] [Objective] The object is to provide a thin package for storing semiconductor elements that allows the semiconductor elements housed inside to operate normally and stably for a long period of time. [Constitution] Alumina ceramic base 1 and iron alloy lid
2 and lead oxide 58.0 to 68.0% by weight, boron oxide 4.0 to 68.0% by weight
10.0% by weight, 2.0 to 5.0% by weight of silicon oxide, and 21.0 to 35.0% by weight of β-eucryptite as a filler.
They were joined together using low melting point glasses 5 and 7 for sealing made of glass containing glass, so that the inside of the container consisting of the base body 1 and the lid body 2 was hermetically sealed. The semiconductor element 3 housed inside can be maintained for a long period of time without any cracks or fractures due to thermal stress in the low-melting glass 5, 7 for sealing, and no peeling between the lid 2 and the low-melting glass 5, 7 for sealing. It becomes possible to operate normally and stably.

Description

[Detailed explanation of the idea]

0001

[Industrial application field]

This invention relates to the improvement of semiconductor device storage packages to accommodate semiconductor devices. It is something that

0002

[Prior art and its problems]

Conventionally, packages for accommodating semiconductor devices, especially semiconductor integrated circuit devices, are As shown in Figure 2, it is made of an electrically insulating material such as alumina ceramics, and has a semicircular structure in the center. It has a recess to form a cavity for accommodating the conductor element, and a low melting point glass for sealing is provided on the top surface. An insulating substrate 11 on which a lath layer 12 is adhered, and an electrically insulating substrate made of alumina ceramics, etc. material, and has a recess in the center to form a cavity for accommodating the semiconductor element. , a lid body 13 with a low melting point glass layer 14 for sealing on the bottom surface, and a semiconductor housed inside. It consists of an external lead terminal 16 for electrically connecting the body element 15 to an external electric circuit. The external lead terminals 16 are placed on the top surface of the insulating base 11 and are covered in advance. External leads are formed by melting the low melting point glass layer 12 for sealing. The terminal 16 is temporarily fixed to the insulating base 11, and then the semiconductor element 15 is placed in the recess of the insulating base 11. At the same time, each electrode (input/output electrode) of the semiconductor element 15 is connected to the bonding wire 17. and then connect the insulating base 11 and the lid 13 to the external lead terminal 16 through the The low melting point glass layers 12 and 14 for sealing, which have been applied to each of the opposing main surfaces, are melted together. The container made of the insulating base 11 and the lid 13 is hermetically sealed. It becomes a semiconductor device as a product.

Note that the low melting point glass layers 12 and 14 for sealing are attached to the upper surface of the insulating substrate 11 and the lower surface of the lid 13. 13, glass whose thermal expansion coefficient matches that of alumina ceramics, such as lead oxide (PbO) 70.0% by weight, boron oxide (B ₂ O ₃ ) 8.6% by weight, titanium oxide (TiO ₂ ) 7.8% by weight and 6.7% by weight of ziconium oxide (ZrO ₂ ).

0004 However, in recent years, information processing devices such as IC cards have become rapidly thinner, and Semiconductor devices installed in information processing equipment will also be required to be thinner. At the same time, the package for storing semiconductor elements that constitutes the semiconductor device also has its lid. It is required to reduce the overall thickness of the package by reducing the thickness to approximately 0.2mm. It's starting to look like this.

[0005] Therefore, the thickness of the lid of the conventional semiconductor device storage package mentioned above is set to about 0.2 mm. However, when the overall thickness of the package is reduced, the package lid is usually made of alumina. It is made of electrically insulating materials such as ceramics, and alumina ceramics are brittle and mechanically resistant. Since the mechanical strength of the lid is weak, reducing the thickness of the lid significantly reduces the mechanical strength of the lid. As a result, the semiconductor device is airtightly placed inside the container consisting of the insulating base and the lid. After sealing and forming a semiconductor device, if an external force is applied to the lid, the external force will cause the lid to close. The container is easily damaged and the hermetic seal inside the container is broken, causing the semiconductor devices housed inside to be damaged for a long period of time. It has the disadvantage that it cannot operate normally and stably for a long period of time. there was.

[0006] In addition, in order to eliminate the above drawbacks, the lid body has excellent mechanical strength and has an absolute coefficient of thermal expansion. Made of Kovar metal or 42 alloy similar to the low melting point glass layer for edge substrate and sealing. It is possible to do so.

However, although Kovar metal and 42 alloy have similar thermal expansion coefficients to alumina ceramics constituting the insulating substrate and low melting point glass for sealing, they have a slight difference (Kovar metal and 42 alloy: 4.4 ~5.0 × 10 ^-6 / °C, alumina ceramics and low melting glass for sealing: 6.5 - 7.5 × 10 ^-6 / °C), when Kovar metal or 42 alloy is used for a wide area lid, the above The difference in thermal expansion coefficient can no longer be ignored, and when the low melting point glass layer for sealing is melted to airtightly seal a container consisting of an insulating base and a lid, the heat that melts the low melting point glass for sealing is If thermal stress is applied to both the lid, the insulating base, and the low melting point glass layer for sealing, the low melting point glass layer for sealing may crack or break due to the difference in thermal expansion coefficient between the two. Peeling may occur between the low-melting-point glass layer for sealing and the lid, and as a result, the hermetic seal of the container may be broken, making it impossible for the semiconductor devices housed inside to operate normally and stably for a long period of time. It induces the disadvantage of not being able to do it.

[0008]

[Means to solve the problem]

The present invention has a semiconductor element between the alumina ceramic base and the iron alloy lid. Each electrode of the semiconductor element is connected to an external lead terminal by a bonding wire. The semiconductor element is hermetically sealed inside by glass welding of the sealing glass. In the package for housing semiconductor elements, the sealing glass contains lead oxide of 58.0 to 68%. .0% by weight, boron oxide 4.0 to 10.0% by weight, silicon oxide 2.0 to 5.0% by weight, Glass containing 21.0 to 35.0% by weight of β-eucryptite as a filler It is characterized by consisting of the following.

[0009]

【Example】

Next, the present invention will be explained in detail based on the accompanying drawings.

0010 FIG. 1 is a sectional view showing an embodiment of the semiconductor element storage package of the present invention. 1 is the base body and 2 is the lid body. The base body 1 and the lid body 2 accommodate the semiconductor element 3. A second container is constructed.

[0011] The base 1 is made of alumina ceramics, and has a semiconductor element 3 in the center of its upper surface. A recess 1a is provided for accommodating a semiconductor element 3 on the bottom surface of the recess 1a. It is attached and fixed via an adhesive such as resin, brazing material, etc.

The substrate 1 made of alumina ceramics is made of raw material powder such as aluminum oxide (Al ₂ O ₃ ), silica (SiO ₂ ), magnesia (MgO), calcia (CaO), etc. in the shape of the substrate 1 shown in FIG. The molded product is manufactured by filling it into a press mold corresponding to the above, molding it by applying a constant pressure, and then firing the molded product at a temperature of approximately 15,000°C.

[0013] In addition, the upper surface of the substrate 1 is coated with Kovar metal (Fe-Ni-Co alloy) or 42 alloy (Fe-Ni alloy). One end of the external lead terminal 4 made of a metal such as gold) is connected through a low melting point glass 5 for sealing. The external lead terminal 4 is an ingot (lump) of Kovar metal, etc. is formed into a predetermined plate shape using conventionally well-known rolling and punching methods. Produced by.

[0014] The external lead terminal 4 is used to connect the semiconductor element 3 housed inside to an external electric circuit. Each electrode of the semiconductor element 3 is connected to one end via a bonding wire 6. By connecting the external lead terminal 4 to an external electrical circuit, the semiconductor Element 3 will be electrically connected to an external electrical circuit.

[0015] The external lead terminal 4 has a good conductivity made of nickel, gold, etc. on its surface. In addition, a layer of metal with excellent corrosion resistance is applied by plating to a thickness of 1.0 to 20.0 μm. This effectively prevents oxidation corrosion of the external lead terminal 4 and the external lead terminal 4. The ending wire 6 can provide a good electrical connection with an external electric circuit. Therefore, the surface of the external lead terminal 4 is plated with nickel, gold, etc. It is preferable to form a layer with a thickness of 20.0 μm.

[0016] Further, the base 1 to which the external lead terminal 4 is temporarily fixed has a lid 2 on its top surface. A low melting point glass 7 for sealing was applied to the bottom surface of the lid 2 and a low melting point glass 7 was applied to the top surface of the base 1. It is joined by melting and integrating low melting point glass5 for sealing, and this results in The semiconductor element 3 is hermetically sealed inside the container consisting of the base body 1 and the lid body 2.

[0017] The lid body 2 is made of Kovar metal (Fe-Ni-Co alloy), 42 alloy (Fe-Ni alloy), etc. Kovar metal is made of iron alloy, and ingots (clumps) of Kovar metal are processed by conventional metal rolling process. It is manufactured by using construction methods and punching methods to form it into a predetermined plate shape. Ru.

[0018] The iron alloy constituting the lid 2 is not a brittle material such as alumina ceramics. Even if the thickness of the inlet is about 0.2 mm, it will not be damaged by the application of external force. Therefore Even if the thickness of the lid body 2 is made approximately 0.2 mm and the overall thickness of the package is made thinner, the inside of the container It is possible to maintain the hermetic seal of the semiconductor device3 housed inside the container for a long period of time. This makes it possible to operate normally and stably.

Incidentally, when the surface of the lid 2 is coated with a high melting point glass 2a, the high melting point glass 2a electrically insulates the lid 2 which is conductive, and a semiconductor element is attached to the lid 2. The bonding wire 6 that connects the electrodes of the semiconductor element 3 to the external lead terminals 4 may come into contact with each other, causing a short circuit between the electrodes of the semiconductor element 3, or causing unnecessary electricity to flow into the semiconductor element 3 from the outside, causing changes in the characteristics of the semiconductor element 3. This can be effectively prevented from occurring. Therefore, in order to operate the semiconductor element 3 reliably and stably, it is preferable to cover the surface of the lid 2 with high melting point glass 2a. In this case, the high melting point glass 2a contains, for example, 40.0 to 60.0% by weight of lead oxide (P bO), 20.0 to 40.0% by weight of silicon oxide (SiO ₂ ), and 5.0 to 10.0% by weight of boron oxide (B ₂ O ₃ ). Glass, or glass containing 40.0 to 60.0% by weight of silicon oxide (SiO ₂ ), 20.0 to 35.0% by weight of barium oxide (BaO), and 5.0 to 15.0% by weight of calcium oxide (CaO) has a thermal expansion coefficient of the lid body 2. These glasses are preferably used because they have similar coefficients of thermal expansion and can be tightly coated on the lid 2. Since these glasses have a high melting point of 600 to 900°C, it is possible to When the low melting point glasses 5 and 7 for sealing are heated and melted and bonded, even if the heat for heating and melting the low melting point glasses 5 and 7 is applied, they do not melt, and the lid body 2 This makes it possible to maintain electrical insulation.

[0020] Furthermore, low melting point glass 5 for sealing is adhered to the upper surface of the base 1 and the lower surface of the lid 2. The low-melting glass 7 for sealing was coated with 58.0 to 68.0% by weight of lead oxide and 58.0% to 68.0% by weight of acid 4.0 to 10.0% by weight of boron oxide and 2.0 to 5.0% by weight of silicon oxide as fillers. It consists of glass containing 21.0 to 35.0% by weight of β-eucryptite. The interior of the container consisting of the base body 1 and the lid body 2 is formed by heating and melting and integrating them. The semiconductor element 3 is hermetically sealed.

The low melting point glasses 5 and 7 for sealing have a coefficient of thermal expansion of 5.5 to 6.0 × 10 ^-6 /°C, and a coefficient of thermal expansion of the alumina ceramics constituting the base 1 (6.5 to 7.5 × 10 ^{- 6} / ℃) and the thermal expansion coefficient of the iron alloy such as Kovar metal or 42 alloy that makes up the lid 2 (4.1 to 5.5 × 10 ^-6 / ℃), and therefore the are joined by melting and integrating the low-melting glasses 5 and 7 for sealing, and when the semiconductor element 3 is hermetically sealed inside the container consisting of the base 1 and the lid 2, the glass is melted and integrated with the lid 2. No large thermal stress is generated between the low melting point glasses 5 and 7 that have been melted together, and between the low melting point glasses 5 and 7 that have been melted and integrated with the substrate 1, and as a result, the The thermal stress does not cause cracks or fractures in the low melting point glasses 5, 7, nor does the lid body 2 separate from the low melting point glasses 5, 7 for sealing.

[0022] In addition, the amount of lead oxide in the low melting point glasses 5 and 7 for sealing is less than 58.0% by weight. The coefficient of thermal expansion of the glass becomes smaller and does not match the thermal expansion of the base 1, and the weight of 68.0 If the amount is exceeded, crystallization of the glass will progress, making it difficult to hermetically seal the container and reducing the durability. Lead oxide has a 58.0 Limited to a range of up to 68.0% by weight.

[0023] Also, if silicon oxide is less than 2.0% by weight, the glass will crystallize and the container will become airtight. It becomes difficult to seal, and if it exceeds 5.0% by weight, the coefficient of thermal expansion of the glass decreases. Since the coefficient of thermal expansion does not match the thermal expansion coefficient of the substrate 1, silicon oxide should be in the range of 2.0 to 5.0% by weight. limited to

[0024] Furthermore, if the boron oxide content is less than 4.0% by weight, the coefficient of thermal expansion of the glass will increase. It will not match the thermal expansion of the lid, and if it exceeds 10.0% by weight, the chemical resistance of the glass will deteriorate. Boron oxide is 4.0 to 10.0 because the reliability of the hermetic seal of the container is greatly reduced due to % by weight.

[0025] Also, if β-eucryptite as a filler is less than 21.0% by weight, the glass The coefficient of thermal expansion of substrate 1 becomes smaller and does not match the thermal expansion of substrate 1, and 35.0% by weight If the temperature is exceeded, the thermal expansion coefficient of the glass will increase and will no longer match the thermal expansion of the lid body 2. β-eucryptite is limited to a range of 21.0 to 35.0% by weight.

[0026] Thus, according to the semiconductor device storage package of the present invention, the bottom surface of the recess 1a of the base 1 A semiconductor element 3 is attached and fixed to the semiconductor element 3 through an adhesive, and each electrode of the semiconductor element 3 is is connected to external lead terminal 4 by bonding wire 6, and then connected to base 1. and lid body 2 are preliminarily coated on their respective opposing main surfaces. By heating and melting the glasses 5 and 7 and joining them, the base 1 and the lid 2 are separated. The semiconductor element 3 is hermetically sealed inside the container, which allows the semiconductor to be manufactured as a product. The device is completed.

[0027]

[Effect of the idea]

According to the semiconductor device storage package of the present invention, the base is made of alumina ceramics. The lid body is made of iron alloy, and the low melting point glass for sealing is made of a material with a thermal expansion coefficient of Lead oxide 58.0 to 68.0% by weight, boron oxide 4.0% by weight, which is between the thermal expansion coefficients of the base and lid. 0 to 10.0% by weight, silicon oxide 2.0 to 5.0% by weight, and β-yl as a filler. -The base material is made of glass containing 21.0 to 35.0% by weight of cryptite. and the lid are joined together using low-melting glass for sealing, and a half is placed inside the container consisting of the base and the lid. When airtightly sealing a conductor element, there is a gap between the lid and the low melting glass for sealing, The thermal stress generated between the point glass and the substrate is extremely small, and as a result, the sealing The thermal stress may cause cracks or cracks in the low melting point glass for the lid, or the lid may become damaged. It never peels off from the low melting point glass used for sealing, and the package is always airtight. Completely seals and keeps the semiconductor elements housed inside normal and stable for a long period of time. It becomes possible to operate it.

[0028] In addition, since the thickness of the lid can be made thinner, the overall thickness of the package is also thinner. It can also be applied to semiconductor devices installed in information processing equipment, which is becoming thinner in recent years. Becomes Noh.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor device storage package of the present invention.

FIG. 2 is a sectional view showing an example of a conventional semiconductor device storage package.

[Explanation of symbols]

1...Base 2... Lid body 2a...High melting point glass 3...Semiconductor element 4...External lead terminal 5,7...Low melting point glass for sealing

Claims (1)

[Scope of utility model registration request] 1. A semiconductor element and an external lead terminal to which each electrode of the semiconductor element is connected by a bonding wire are sandwiched between an alumina ceramic base and an iron alloy lid, and glass for sealing is welded. In a semiconductor device storage package in which a semiconductor device is hermetically sealed inside, the sealing glass contains 58.0 to 68.0% by weight of lead oxide,
Boron oxide 4.0 to 10.0% by weight, silicon oxide 2.0 to 5.
0% by weight with β-eucryptite as a filler.
A package for storing semiconductor elements, characterized in that it is made of glass containing 21.0 to 35.0% by weight.