JPH04113653A - Semiconductor device - Google Patents

Abstract

PURPOSE:To suppress the amount of electromagnetic radiation at low by extending a power supply wiring section and wiring for GND so as to be adjacent and by laying the power supply wiring in parallel to the output signal wiring section. CONSTITUTION:When setting gate electrode 7 of driver Tr at 'H', electric current flows from bonding pad 1 to main GND wiring section 22 via output signal wiring section 21, diffusion area 3 for output, diffusion area 5 for GND, and wiring section 19 for GND. Further, when setting gate electrode 8 of load Tr at 'H', electric current flows from wiring section 23 for main power supply to the bonding pad 1 via wiring section 20 for power supply, diffusion area 6 for power supply, diffusion area 3 for output, and wiring section 21 for output signal. That is, between the output signal wiring section 21 and the GND wiring section 19 and between the output signal wiring section 21 and the power supply wiring section 20 electric current flows in the directions opposite to each other. Therefore, phases of the radiated electromagnetic waves are also opposite to each other and they are cancelled by each other, thereby extremely reducing the electromagnetic waves to be externally radiated.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to semiconductor devices, and particularly to a pattern layout method for reducing electromagnetic radiation from a semiconductor integrated circuit.

[Conventional technology]

As semiconductor integrated circuits become faster, system failures due to electromagnetic radiation have become a problem. There is an output circuit as a circuit that emits a large amount of electromagnetic radiation. FIG. 2 is a diagram showing the pattern layerer 1- of the output section as an example. In this figure, 1 is a bonding pad, 2 is an output signal wiring section connecting the output circuit and the bonding pad 1, 3 is an output diffusion region of the output circuit, and 4 is this output diffusion region 3 and the output signal wiring section 2. 5 is a diffusion region for GND, 6 is a diffusion region for power supply, 7C is a gate electrode of the driver Tr of the output circuit, 8 is a gate electrode of the output circuit, and 9 is a gate electrode of the output circuit. GN connecting the main power supply wiring section
D wiring section, 10 is a power supply wiring section connecting the output circuit and the main power supply wiring section, and 11 is the GND diffusion region 5 and GN.
A contact hole 12 connects the D wiring portion 9, and a contact hole 12 connects the power source diffusion region 6 and the power source wiring portion 10.

Next, the operation will be explained.

The gate electrode 7 of the driver Tr and the gate electrode 8 of the load Tr are designed to receive opposite signals.
- When an "H'" signal enters the electrode 7, the output becomes "L", and when an "H" signal enters the gate electrode 8, the output becomes "H".The output becomes "L". When changing from "to H", a large current flows toward the bonding pad 1,
When the output changes from "H" to 'L°', a large current flows from the positive pad 1 to the GND region.

In any case, a large current flows through the output signal wiring section 2, but it is often impossible to shorten the output signal wiring section 2. Therefore, electromagnetic radiation occurs using the output signal wiring [2 as an antenna.

[Problem to be solved by the invention]

In the conventional pattern layout of the output section, electromagnetic radiation occurs as described above. This radiation amount is the output “ON”, “O”
Since the frequency of the electromagnetic radiation is proportional to the frequency of the FF, the problem of electromagnetic radiation has become more apparent as the speed of semiconductor integrated circuits has been increasing in recent years.

The present invention was made to solve the above-mentioned problems, and an object of the present invention is to obtain a semiconductor device that can suppress the amount of electromagnetic radiation.

[Means to solve the problem]

A semiconductor device according to the present invention includes an output transistor circuit of a semiconductor integrated circuit arranged on a semiconductor substrate, an output signal wiring section of the output transistor circuit, a power supply wiring section and a GND wiring connected to the output transistor circuit. In a semiconductor device including a power wiring section and a GN section,
The D wiring section is extended and placed adjacent to and parallel to the output signal wiring section.

[Effect]

In the semiconductor device of the present invention, two types of electromagnetic waves having completely opposite phases are generated from the output signal wiring section by providing wiring with equal current change amount and opposite current direction on the side of the output signal wiring section that causes electromagnetic radiation. is released. Because the two types of electromagnetic waves are emitted from very close locations, they cancel each other out, and when viewed from the outside, electromagnetic radiation is extremely reduced.

〔Example〕

An embodiment of the present invention will be described below with reference to FIG.

In FIG. 1, the same reference numerals as in FIG. 2 indicate the same components, and 21 is an output signal wiring section connecting the output circuit and the bonding pad 1, which is longer than the conventional example. 19 and 2
0 is a GND wiring section and a power supply wiring section provided on the output signal wiring section 21 side. 22 is a main GND wiring section, 23 is a main power supply wiring section, 24 is a connecting hole for connecting the GND wiring section 19 and the main GND wiring section 22, and 25 is a connection between the power supply wiring section 20 and the main power supply. This is a contact book for connection of the wiring section 23.

Next, the operation will be explained.

When the gate electrode 7 of the driver Tr is set to "H", the current flows from the bonding pad 1 to the output signal wiring section 21. Output diffusion area 3. It flows toward the main GND wiring section 22 via the GND diffusion region 5 and the GNDN durable wiring 9. Further, when the gate electrode 8 of the load Tr is set to "H", the current flows from the main power supply wiring section 23 to the power supply wiring section 20.
．． Diffusion area for power supply 6. Output diffusion area 3. The signal flows toward the bonding pad 1 via the output signal wiring section 21 .

That is, as described above, current flows in completely opposite directions between the output signal wiring section 21 and the GNDN durable wiring 9 or between the output signal wiring section 21 and the power supply wiring section 20. Therefore, the emitted electromagnetic waves have completely opposite phases, and since they cancel each other out, the electromagnetic waves emitted to the outside can be extremely reduced.

In addition, in the above embodiment, an example was shown in which another wiring, the GND wiring part 19 and the power supply wiring part 20, is arranged parallel to the output signal wiring part 21; A similar effect can be obtained by placing another wiring above the circuit and configuring the circuit so that the current flows in the completely opposite direction.

〔Effect of the invention〕

As explained above, the present invention provides an output transistor circuit of a semiconductor integrated circuit disposed on a semiconductor substrate, an output signal wiring section of the output transistor@path, a power supply wiring section connected to the output transistor circuit, and a power supply wiring section connected to the output transistor circuit. In a semiconductor device including a GND wiring section, the power supply wiring section and the GND wiring section are extended and arranged adjacent to and in parallel with the output signal wiring section, so that current flows in the opposite direction, thereby reducing emission. Since the electromagnetic waves emitted are completely opposite in phase and cancel each other out, electromagnetic radiation to the outside can be extremely reduced.

[Brief explanation of drawings]

FIG. 1 is a diagram showing a pattern layout of an output section according to an embodiment of the present invention, and FIG. 2 is a diagram showing a conventional pattern layout of an output section. In the figure, 1 is a bomb knob pad, 3 is an output diffusion region, 4, 11, 12, 24, and 25 are contact holes, 5 is a GND diffusion region, 6 is a power supply diffusion region, and 7 is a driver Tr diffusion region. 8 is a gate electrode of a load Tr, 19 is a GND wiring section, 20 is a power supply wiring section, 21 is an output signal wiring section, 22 is a main power supply wiring section, and 23 is a main power supply wiring section. Note that the same reference numerals in each figure indicate the same or corresponding parts.

Claims (1)

[Claims] A semiconductor device including an output transistor circuit of a semiconductor integrated circuit arranged on a semiconductor substrate, an output signal wiring section of the output transistor circuit, and a power supply wiring section and a GND wiring section connected to the output transistor circuit. . A semiconductor device, wherein the power wiring section and the GND wiring section are arranged adjacent to and parallel to the output signal wiring section.