JPH04113436U - Vertical diffusion, CVD equipment - Google Patents

Vertical diffusion, CVD equipment

Info

Publication number
JPH04113436U
JPH04113436U JP1744191U JP1744191U JPH04113436U JP H04113436 U JPH04113436 U JP H04113436U JP 1744191 U JP1744191 U JP 1744191U JP 1744191 U JP1744191 U JP 1744191U JP H04113436 U JPH04113436 U JP H04113436U
Authority
JP
Japan
Prior art keywords
reaction tube
thermocouple
tube
heater
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1744191U
Other languages
Japanese (ja)
Inventor
誠治 渡辺
誠 小沢
幹夫 小泉
Original Assignee
国際電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 国際電気株式会社 filed Critical 国際電気株式会社
Priority to JP1744191U priority Critical patent/JPH04113436U/en
Publication of JPH04113436U publication Critical patent/JPH04113436U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】 〔目的〕 ウェーハの温度制御性を向上させ、かつ反応
管2等の破損,傷損を防止する。 〔構成〕 反応管2に熱電対4を装着することにより反
応管2内に挿入するウェーハ3の温度を正確に検出で
き、ウェーハ3の温度制御性を向上できると共に反応管
2等の破損,傷損を防止できる。
(57) [Summary] [Purpose] To improve the temperature controllability of wafers and to prevent breakage and damage to the reaction tube 2, etc. [Structure] By attaching a thermocouple 4 to the reaction tube 2, the temperature of the wafer 3 inserted into the reaction tube 2 can be accurately detected, and the temperature controllability of the wafer 3 can be improved and the reaction tube 2 etc. can be prevented from being damaged or scratched. You can prevent losses.

Description

【考案の詳細な説明】[Detailed explanation of the idea]

【0001】0001

【産業上の利用分野】[Industrial application field]

本考案はヒータを垂直に設置し、このヒータ内に反応管を挿設して使用する縦 型拡散,CVD装置に係り、特に反応管の下側開口部から被熱処理物であるウェ ーハの挿入,取出しを行う縦型拡散,CVD装置に関する。 This invention uses a vertical heater that is installed vertically and a reaction tube inserted into the heater. Regarding mold diffusion and CVD equipment, especially the wafer that is the object to be heat-treated from the lower opening of the reaction tube. The present invention relates to a vertical diffusion and CVD device for inserting and removing ferrite.

【0002】0002

【従来の技術】[Conventional technology]

図2は従来装置の1例の構成を示す縦断面図である。この従来装置はヒータ受 台10にヒータ1が載置され、均熱管受台11に断熱材12,均熱管13が載置 されており、それらはヒータ1内部へ挿設されている。均熱管受台11に防塵カ バー14が取付けられ、防塵カバー14の穴に熱電対を収めた熱電対保護管20 が嵌入により取付けられている。 FIG. 2 is a longitudinal sectional view showing the configuration of an example of a conventional device. This conventional device The heater 1 is placed on the stand 10, and the heat insulating material 12 and the soaking tube 13 are placed on the soaking tube holder 11. They are inserted into the heater 1. A dustproof cover is placed on the heat equalizing tube holder 11. Thermocouple protection tube 20 to which the bar 14 is attached and the thermocouple is housed in the hole of the dustproof cover 14 is attached by fitting.

【0003】 ヒータ受台10に反応管当板15が取付けられ、ヒータ1内部には反応管2が 挿設されており、反応管当板15と、反応管保持台16とで反応管2が固定され ている。キヤップ受台17にキヤップ6が載置されキヤップ6の上面とボート5 の下方フランジ部7Bに設けられた穴8に位置決めピン9が挿入されてキヤップ 6上にボート5が載置されており、このボート5には多数のウェーハ3が載置さ れている。またキヤップ6の周囲には反応管2に接触するパッキン18が載置さ れている。7Aは上方フランジ部、19はキヤップ受台17,キヤップ6及びボ ート5を上昇,下降させ、キヤップ6及びボート5を反応管2内に挿入,取出し を行う上下移動機構である。0003 A reaction tube stopper plate 15 is attached to the heater pedestal 10, and a reaction tube 2 is installed inside the heater 1. The reaction tube 2 is fixed by the reaction tube stopper plate 15 and the reaction tube holding stand 16. ing. The cap 6 is placed on the cap pedestal 17, and the upper surface of the cap 6 and the boat 5 The positioning pin 9 is inserted into the hole 8 provided in the lower flange portion 7B of the cap. A boat 5 is placed on the boat 6, and a large number of wafers 3 are placed on the boat 5. It is. Also, a packing 18 that contacts the reaction tube 2 is placed around the cap 6. It is. 7A is the upper flange part, 19 is the cap holder 17, the cap 6 and the bolt. Raise and lower the boat 5 and insert and remove the cap 6 and boat 5 into the reaction tube 2. It is a vertical movement mechanism that performs

【0004】 このような構成の従来装置において通常はヒータ1を加熱し熱電対保護管20 の中の熱電対で熱起電力を検出し、補償導線4Aを経由してコントローラにその 信号を伝える。コントローラはPID制御法等によりヒータ1の温度をコントロ ールして反応管2内の設定温度に合うよう制御する。上下移動機構19によりキ ヤップ受台17、キヤップ6及び、ボート5を上昇させ、パッキン18が反応管 2に接触するまで上昇させる。ウェーハ3はヒータ1によって加熱され、熱処理 されることになる。0004 In a conventional device with such a configuration, normally the heater 1 is heated and the thermocouple protection tube 20 is heated. The thermoelectromotive force is detected by the thermocouple in the inside, and it is sent to the controller via the compensation conductor 4A. convey a signal. The controller controls the temperature of heater 1 using PID control method etc. The temperature is controlled to match the set temperature in the reaction tube 2. The key is moved by the vertical movement mechanism 19. Raise the Yap pedestal 17, Cap 6, and Boat 5, and place the packing 18 on the reaction tube. Raise it until it touches 2. The wafer 3 is heated by the heater 1 and subjected to heat treatment. will be done.

【0005】[0005]

【考案が解決しようとする課題】[Problem that the idea aims to solve]

上記従来例にあっては、熱電対とヒータ1の間隔よりも被熱処理物であるウェ ーハ3と熱電対の間隔の方が大きいため、ウェーハ3の温度の制御性が悪いとい う課題があった。又、防塵カバー14の穴に熱電対保護管20を嵌入し固定する 際スペースが小さく、熱電対が約1mと長いなどの理由で、保護管20の固定が 難しく保護管20を破損する恐れがあるばかりでなく、ヒータ1の熱により均熱 管受台11が変形し、防塵カバー14を傾けさせてしまうので、熱電対保護管2 0が反応管2側に倒れて、反応管2と接触し反応管2をヒータ1から出し入れす る際、これらの接触により反応管2が傷損したり、保護管20が破損する恐れが あった。 In the conventional example described above, the distance between the thermocouple and the heater 1 is - Because the distance between the wafer 3 and the thermocouple is larger, the temperature control of the wafer 3 is poor. There was an issue. Also, fit the thermocouple protection tube 20 into the hole of the dustproof cover 14 and fix it. Due to the small space available and the long thermocouple of approximately 1 m, it is difficult to secure the protective tube 20. Not only is it difficult to do so, there is a risk of damaging the protection tube 20, but the heat from the heater 1 also prevents uniform heating. Since the tube holder 11 is deformed and the dustproof cover 14 is tilted, the thermocouple protection tube 2 0 falls to the reaction tube 2 side and comes into contact with the reaction tube 2, allowing the reaction tube 2 to be taken in and out of the heater 1. When doing so, there is a risk that the reaction tube 2 may be damaged or the protection tube 20 may be damaged due to such contact. there were.

【0006】[0006]

【課題を解決するための手段】[Means to solve the problem]

本考案装置は上記の課題を解決するため、図1に示すようにヒータ1内に反応 管2を挿設し、この反応管2の下側開口部より被熱処理物であるウェーハ3の挿 入,取出しを行う縦型拡散,CVD装置において、前記反応管2に熱電対4を装 着してなる構成としたものである。 In order to solve the above-mentioned problems, the device of the present invention creates a reaction inside the heater 1 as shown in Figure 1. A tube 2 is inserted, and a wafer 3, which is the object to be heat-treated, is inserted through the lower opening of the reaction tube 2. In a vertical diffusion/CVD device that performs input and extraction, a thermocouple 4 is installed in the reaction tube 2. It has a structure in which it is worn over the body.

【0007】[0007]

【作 用】[Effect]

このような構成とすることにより熱電対4とウェーハ3の間隔を従来よりも狭 くできるので、ウェーハ3の温度を従来に比して正確に検出でき、ウェーハ3の 温度制御性を向上することができることになる。又、反応管2に熱電対4を装着 してあるので、反応管2をヒータ1から出し入れしても、反応管2等が均熱管1 3などの他の部品と接触することがないから破損,傷損するおそれはない。 With this configuration, the distance between the thermocouple 4 and the wafer 3 can be narrower than before. Since the temperature of wafer 3 can be detected more accurately than before, the temperature of wafer 3 can be detected more accurately than before. This means that temperature controllability can be improved. In addition, a thermocouple 4 is attached to the reaction tube 2. Therefore, even if the reaction tube 2 is taken in and out of the heater 1, the reaction tube 2 etc. are not connected to the soaking tube 1. Since there is no contact with other parts such as 3, there is no risk of damage or damage.

【0008】[0008]

【実施例】【Example】

図1は本考案装置の1実施例の構成を示す縦断面図である。前記図2の従来装 置の部品と同一機能を果す部品には同一符号を付してあり、その説明は省略する 。本実施例は反応管2の直胴部分内側に熱電対用細管2Aが設けられ、この細管 2A内に熱電対4が収設された構成になっている。反応管2の直胴部分外側に熱 電対用細管2Aを設けてこれに熱電対4を収設するようにしてもよい。また熱電 対4は反応管2の直胴部分に設けられた穴に収設してもよい。 FIG. 1 is a longitudinal sectional view showing the configuration of one embodiment of the device of the present invention. Conventional equipment shown in Figure 2 above Parts that perform the same function as the parts in the installation are given the same symbols, and their explanations will be omitted. . In this embodiment, a thermocouple thin tube 2A is provided inside the straight body portion of the reaction tube 2, and this thin tube Thermocouple 4 is housed in 2A. Heat is applied to the outside of the straight body part of reaction tube 2. A thin tube 2A for a couple may be provided and the thermocouple 4 may be housed therein. Also thermoelectric The pair 4 may be housed in a hole provided in the straight body portion of the reaction tube 2.

【0009】 細管2A内部と反応管2の内側は同一雰囲気にならないようになっている。そ の理由は反応管2内に流入する反応ガスが熱電対4に接触しないようにするため と反応管2の外側の大気が熱電対用細管2Aを経由して内側に入らないようにす るためである。[0009] The atmosphere inside the thin tube 2A and the inside of the reaction tube 2 are not the same. So The reason for this is to prevent the reaction gas flowing into the reaction tube 2 from coming into contact with the thermocouple 4. and to prevent the atmosphere outside the reaction tube 2 from entering the inside via the thermocouple tube 2A. This is for the purpose of

【0010】 上記構成の本実施例において通常はヒータ1を加熱し熱電対用細管2Aの中の 熱電対4で熱起電力を検出し、補償導線4Aを経由してコントローラにその信号 を伝える。コントローラはPID制御法等によりヒータ1の温度をコントロール して反応管2内の設定温度に合うよう制御する。上下移動機構19によりキヤッ プ受台17、キヤップ6及び、ボート5を上昇させ、パッキン18が反応管2に 接触するまで上昇させる。ウェーハ3はヒータ1によって加熱され、熱処理され ることになる。0010 In this embodiment with the above configuration, normally the heater 1 is heated and the inside of the thermocouple tube 2A is heated. The thermoelectromotive force is detected by the thermocouple 4, and the signal is sent to the controller via the compensation conductor 4A. convey. The controller controls the temperature of heater 1 using PID control method etc. The temperature in the reaction tube 2 is controlled to match the set temperature. The cat is moved by the vertical movement mechanism 19. Raise the pedestal 17, cap 6, and boat 5, and place the packing 18 on the reaction tube 2. Raise until contact. The wafer 3 is heated by the heater 1 and subjected to heat treatment. That will happen.

【0011】 本実施例によれば、反応管2の直胴部分内側に設けられた熱電対用細管2A内 に熱電対4を収設しているので、熱電対4とウェーハ3の間隔を従来よりも狭く できるので、ウェーハ3の温度を従来に比して正確に検出でき、ウェーハ3の温 度制御性を向上することができることになると共に反応管2をヒータ1から出し 入れしても、反応管2等が均熱管13などの他の部品と接触することがないから 破損,傷損するおそれはない。[0011] According to this embodiment, inside the thermocouple thin tube 2A provided inside the straight body portion of the reaction tube 2. Since thermocouple 4 is housed in As a result, the temperature of wafer 3 can be detected more accurately than before, and the temperature of wafer 3 can be detected more accurately than before. It is possible to improve the temperature controllability and to remove the reaction tube 2 from the heater 1. Even if it is inserted, the reaction tube 2 etc. will not come into contact with other parts such as the soaking tube 13. There is no risk of damage or damage.

【0012】0012

【考案の効果】[Effect of the idea]

上述のように本考案によれば、反応管2に熱電対4を装着する構成とすること により熱電対4とウェーハ3の間隔を従来よりも狭くできるので、ウェーハ3の 温度を従来に比して正確に検出でき、ウェーハ3の温度制御性を向上することが できることになるばかりでなく、反応管2をヒータ1から出し入れしても、反応 管2等が均熱管13などの他の部品と接触することがないから破損,傷損するお それはない。 As described above, according to the present invention, the thermocouple 4 is attached to the reaction tube 2. Since the distance between the thermocouple 4 and the wafer 3 can be made narrower than before, the distance between the thermocouple 4 and the wafer 3 can be narrowed. The temperature can be detected more accurately than before, and the temperature controllability of the wafer 3 can be improved. Not only can the reaction tube 2 be moved in and out of the heater 1, but the reaction will continue. Since the tube 2 etc. does not come into contact with other parts such as the heat soaking tube 13, there is no risk of breakage or damage. That's not it.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本考案装置の1実施例の構成を示す縦断面図で
ある。
FIG. 1 is a longitudinal sectional view showing the configuration of one embodiment of the device of the present invention.

【図2】従来装置の1例の構成を示す縦断面図である。FIG. 2 is a longitudinal sectional view showing the configuration of an example of a conventional device.

【符号の説明】[Explanation of symbols]

1 ヒータ 2 反応管 2A 熱電対用細管 3 ウェーハ 4 熱電対 4A 補償導線 5 ボート 6 キヤップ 1 Heater 2 reaction tube 2A thin tube for thermocouple 3 wafer 4 Thermocouple 4A compensation conductor 5 Boat 6 Cap

─────────────────────────────────────────────────────
──────────────────────────────────────────────── ───

【手続補正書】[Procedural amendment]

【提出日】平成3年6月26日[Submission date] June 26, 1991

【手続補正1】[Procedural amendment 1]

【補正対象書類名】図面[Name of document to be corrected] Drawing

【補正対象項目名】全図[Correction target item name] Full map

【補正方法】変更[Correction method] Change

【補正内容】[Correction details]

【図1】 [Figure 1]

【図2】 [Figure 2]

Claims (3)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】 ヒータ(1)内に反応管(2)を挿設
し、この反応管(2)の下側開口部より被熱処理物であ
るウェーハ(3)の挿入,取出しを行う縦型拡散,CV
D装置において、前記反応管(2)に熱電対(4)を装
着してなる縦型拡散,CVD装置。
[Claim 1] A vertical type in which a reaction tube (2) is inserted into the heater (1), and a wafer (3) to be heat-treated is inserted and taken out from the lower opening of the reaction tube (2). Diffusion, CV
D apparatus is a vertical diffusion/CVD apparatus in which a thermocouple (4) is attached to the reaction tube (2).
【請求項2】 熱電対(4)は反応管(2)の直胴部分
内側又は外側に設けられた熱電対用細管(2A)内に収
設してなる請求項1の縦型拡散,CVD装置。
2. The vertical diffusion, CVD method according to claim 1, wherein the thermocouple (4) is housed in a thin thermocouple tube (2A) provided inside or outside the straight body portion of the reaction tube (2). Device.
【請求項3】 熱電対(4)は反応管(2)の直胴部分
内に収設してなる請求項1の縦型拡散,CVD装置。
3. The vertical diffusion/CVD apparatus according to claim 1, wherein the thermocouple (4) is housed within the straight body portion of the reaction tube (2).
JP1744191U 1991-03-22 1991-03-22 Vertical diffusion, CVD equipment Pending JPH04113436U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1744191U JPH04113436U (en) 1991-03-22 1991-03-22 Vertical diffusion, CVD equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1744191U JPH04113436U (en) 1991-03-22 1991-03-22 Vertical diffusion, CVD equipment

Publications (1)

Publication Number Publication Date
JPH04113436U true JPH04113436U (en) 1992-10-05

Family

ID=31904210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1744191U Pending JPH04113436U (en) 1991-03-22 1991-03-22 Vertical diffusion, CVD equipment

Country Status (1)

Country Link
JP (1) JPH04113436U (en)

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