JPH0410980A - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JPH0410980A JPH0410980A JP2113382A JP11338290A JPH0410980A JP H0410980 A JPH0410980 A JP H0410980A JP 2113382 A JP2113382 A JP 2113382A JP 11338290 A JP11338290 A JP 11338290A JP H0410980 A JPH0410980 A JP H0410980A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- thin film
- recording medium
- layer
- optical recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims description 17
- 239000010409 thin film Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000011159 matrix material Substances 0.000 claims abstract description 11
- 150000004767 nitrides Chemical class 0.000 claims abstract description 9
- 238000001816 cooling Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 239000000155 melt Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052681 coesite Inorganic materials 0.000 abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 3
- 239000011347 resin Substances 0.000 abstract description 3
- 229920005989 resin Polymers 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract description 2
- 239000004417 polycarbonate Substances 0.000 abstract description 2
- 229920000515 polycarbonate Polymers 0.000 abstract description 2
- 229910000838 Al alloy Inorganic materials 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 40
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 230000010349 pulsation Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052798 chalcogen Inorganic materials 0.000 description 2
- 150000001787 chalcogens Chemical class 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910017000 As2Se3 Inorganic materials 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052958 orpiment Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はレーザービーム等により、情報を高密嵐 大容
量で記録再生及び消去できる光記録媒体に関するもので
あも
従来の技術
光デイスクメモリに関してｉ友 ＴｅとＴｅＯ２を主成
分とするＴ ｅ ０ｘ（０＜ ｘ ＜２．０）薄膜を用
いた追記型のディスクがあも また繰り返し記録・消去
が可能な消去ディスクが実用化されつつあムこの消去デ
ィスクはレーザ光により記録薄膜を加熱し 溶融し 急
冷することにより、非晶質化して情報を記録し またこ
れを加熱し徐冷することにより結晶化して消去すること
ができるものである力交 この記録薄膜の材料としては
Ｓ、 Ｒ，○ＶＳｈ １ｎｓｋｙ （ニス・アール・
オプシンスキー）氏等のカルコゲン材料Ｇｅ１５Ｔｅ８
１Ｓ ｂ２Ｓ２等が知られていも ま？＝Ａｓ２Ｓ３や
Ａｓ２Ｓｅ３あるいはＳｂ２Ｓｅ３等カルコゲン元素と
周期律表第Ｖ族あるいはＧｅ等の第 族元素等の組み合
せからなる薄膜等が広く知られていも
これらの記録薄膜をレーザ光ガイド用の溝を設けた基板
に形成し 光ディスクとして用いることができる。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an optical recording medium capable of recording, reproducing, and erasing information in a high-density, large-capacity manner using a laser beam or the like. Write-once disks that use thin films of T e 0x (0 < x < 2.0), whose main components are By heating a recording thin film with a laser beam, melting it, and rapidly cooling it, it becomes amorphous and records information, and by heating and slowly cooling it, it becomes crystallized and can be erased. S, R, ○VSh 1nsky (varnish R.
Chalcogen material Ge15Te8 of Mr. Opsinski et al.
Even if 1S b2S2 etc. are known? Although thin films made of a combination of a chalcogen element such as As2S3, As2Se3, or Sb2Se3 and a group V element of the periodic table or a group element such as Ge are widely known, these recording thin films have been provided with grooves for guiding laser light. It can be formed on a substrate and used as an optical disk.
これらのディスクにレーザ光で情報を記録し その情報
を消去する方法としては あらかじめ記録薄膜を結晶化
させておき、これに約１μｍに絞ったレーザ光を情報に
対応させて強度変調を施し例えば円盤状の記録ディスク
を回転せしめて照射した場合、このピークパワーレーザ
光照射部位は記録薄膜の融点以上に昇温し かつ急冷し
非晶質化したマークとして情報の記録がおこなえもま
たこの変調バイアスパワーレーザ光照射部位は記録薄膜
の結晶化温度以上に昇温し徐冷して結晶化を行し＼ 既
記緑信号情報を消去する働きがありオーバライドできも
このように記録薄膜はレーザ光によって融点以上に昇
温し また結晶化温度以上に昇温されるものであム こ
のため記録薄膜の下面および上面＆へ 耐熱性のすぐれ
た誘電体層を基板および接着層に対する保護層として設
けているのが一般的であム これらの誘電体層の熱伝導
特性により、昇温および急冷 徐冷の特性が変わるもの
であるか収 誘電体層の材質あるいは層構成を選ぶこと
によって記録および消去の特性を決めることができるも
のであム
発明が解決しようとする課題
記録薄膜を加熱昇温し 溶融急冷非晶質化および加熱昇
温徐冷結晶化の手段を用いる情報記録および消去可能な
オーバライド記録媒体における課題１表 記録・消去の
繰り返し特性と消去特性であも
記録・消去の繰り返し特性について（友 記録・消去の
加肱 冷却の多数回の繰り返しによるディスク基板ある
いは誘電体層の熱的な損傷によるノイズの増犬 また損
傷は無くてＬ 記録・消去の繰り返しに伴う加肱 冷却
の繰り返しによる誘電体層の脈動によって、記録薄膜材
料がディスク回転方向の案内溝に沿って脈動し移動する
等 記録・消去の繰り返し特性の劣化が課題であっ九消
去特性についてはＴｅを含む非晶質膜は その融点は代
表的なもので４００℃〜９００℃と広い温度範囲にある
。The method of recording information on these disks using laser light and erasing that information is to first crystallize a recording thin film, and then intensity-modulate the laser beam focused to about 1 μm to correspond to the information. When a shaped recording disk is rotated and irradiated, the area irradiated with this peak power laser beam heats up above the melting point of the recording thin film and rapidly cools down, and information is recorded as amorphous marks. The area irradiated with the laser beam is heated to a temperature higher than the crystallization temperature of the recording thin film, and then slowly cooled to crystallize it.\ It has the function of erasing the previously recorded green signal information and can be overridden.In this way, the recording thin film is heated to the melting point by the laser beam For this reason, a dielectric layer with excellent heat resistance is provided on the lower and upper surfaces of the recording thin film as a protective layer for the substrate and adhesive layer. Generally speaking, the thermal conductivity properties of these dielectric layers change the characteristics of heating, rapid cooling, and slow cooling.The recording and erasing characteristics can be controlled by selecting the material or layer configuration of the dielectric layer. The problem to be solved by the present invention is to provide information recording and erasable override recording media using means of heating and heating a recording thin film, melting and rapidly cooling it to make it amorphous, and heating and slowly cooling it to crystallization. Table 1: Repeated recording/erasing characteristics and erasing characteristicsRegarding the repetitive recording/erasing characteristics (Friends Recording/Erasing Noise caused by thermal damage to the disk substrate or dielectric layer due to repeated cooling) Also, there is no damage L. Damage due to repeated recording and erasing Due to the pulsation of the dielectric layer due to repeated cooling, the recording thin film material pulsates and moves along the guide groove in the direction of disk rotation, etc. Recording and erasing Regarding the erasure characteristics, the melting point of an amorphous film containing Te typically ranges from 400°C to 900°C, which is a wide temperature range.
これらの記録薄膜にレーザ光を照射し 昇温徐冷するこ
とにより結晶化が行える。この温度は一般的に融点より
低い結晶化温度領域である。またこの結晶化した膜に高
いパワーレベルのレーザ光をあて、その融点以上に加熱
するとその部分は溶融し急冷し 再び非晶質化してマー
クが形成できム記録マークとして非晶質化を選ぶと、こ
のマークは記録薄膜が溶融し急冷されて形成されるもの
であるか収 冷却速度が速いほど非晶質状態の均一なも
のが得られ信号振幅が向上すも 冷却速度が遅い場合は
マークの中心と周辺で非晶質化の程度に差が発生ず４
次に結晶化消去に際して（よ レーザ光の照射により既
に記録が行われている非晶質マーク部を、結晶化温度以
上に昇温し結晶化させてこのマークを消去すも
この消去の時、マークの非晶質状態が均一な場合は均一
に結晶化されやすくなり消去特性が向上する力曳 記録
マークの非晶質状態が不均一な場合（よ結晶化消去の状
態が不均一となって消去特性が低下するという課題があ
り九 本発明の目的は記録消去特性に優れ 記録・消去
の繰り返し特性の安定な光ディスクを提供することであ
も
課題を解決するための手段
本発明はレーザ光の照射により、そのエネルギーを吸収
して昇風 溶融し 急冷して非晶質化する性質と、非晶
質の状態を昇温することにより結晶化する性質を有する
記録薄膜層を、Ｔｅ、Ｇｅ、ｓｂとＴｅ、Ｇｅ、 Ｓ
ｂの中の少なくとも一つの元素の窒化物または酸化物と
のマトリックス構成にするものである。Crystallization can be achieved by irradiating these recording thin films with laser light and gradually increasing the temperature and cooling. This temperature is generally in the crystallization temperature range below the melting point. In addition, when this crystallized film is heated with a high power level laser beam and heated above its melting point, that part melts and rapidly cools down, becoming amorphous again and forming a mark.If amorphous film is selected as a recording mark, This mark is formed when the recording thin film is melted and rapidly cooled.The faster the cooling rate is, the more uniform the amorphous state is obtained and the signal amplitude is improved; however, if the cooling rate is slow, the mark is There is no difference in the degree of amorphization between the center and the periphery.4
Next, during crystallization erasing, the amorphous mark part on which recording has already been performed is heated to a temperature higher than the crystallization temperature to crystallize and erase this mark. When the amorphous state of the recorded mark is uniform, it is easy to crystallize uniformly and the erasing characteristics are improved. The purpose of the present invention is to provide an optical disc with excellent recording and erasing properties and stable repeated recording and erasing properties. Upon irradiation, the recording thin film layer is made of Te, Ge, sb and Te, Ge, S
A matrix structure is formed with a nitride or oxide of at least one element in b.
作用
すなわち記録薄膜層をＴｅ、Ｇｅ、ＳｂとＴｅ、Ｇｅ、
Ｓｂの中の少なくとも一つの元素の窒化物または酸化物
とのマトリックス構成にすることで、記録消去の繰り返
しに伴う誘電体層の脈動によって、記録薄膜材料が案内
溝に沿って移動する現象を抑制することができ、これに
よって記録・消去の繰り返し特性を向上することができ
るものであ４ また透明基板の一方の面に第一の誘電体
層と、記録薄膜層と、第二の誘電体層と、反射層とを順
次形成し 第二の誘電体層の膜厚を第一の誘電体層の膜
厚より薄くすることによって、熱拡散層である反射層と
記録薄膜層を近づけることになり、記録薄膜層が急冷さ
れるものであるから記録マークが均一な非晶質状態とな
って、記録マークが不均一な場合に生じる結晶化消去時
の不均一な状態の発生を防止することができ、消去特性
を向上させることが出来るものであム
実施例
以下、本発明の一実施例を図面に基づいて説明する。第
１図においてｌはディスク基板でポリカーボネイト等の
樹脂基板からなっていも このディスク基板１はあらか
じめレーザ光案内用の溝を形成した樹脂基板あるいはフ
ォトポリマーを用いゑ いわゆる２Ｐ法で溝を形成した
ガラス板、ガラス板に直接溝を形成した基板であっても
よしも２は第一の誘電体層でＺｎＳ−８ｉ０２の混合膜
からなっており、膜厚は約１５０ｒｖであも ３は記録
薄膜層でＴｅ、Ｇｅ、ＳｂとＴｅ、 Ｇｅ、 Ｓｂ
の中の一つの元素の窒化物または酸化物のマトリックス
構成になっており、膜厚は約３０ｎｍである。In other words, the recording thin film layer is composed of Te, Ge, Sb and Te, Ge,
By creating a matrix structure with nitride or oxide of at least one element in Sb, the phenomenon in which the recording thin film material moves along the guide groove due to pulsation of the dielectric layer due to repeated recording and erasing is suppressed. This makes it possible to improve the repeatability of recording and erasing. By sequentially forming the first dielectric layer and the second dielectric layer, and making the thickness of the second dielectric layer thinner than the first dielectric layer, the reflective layer, which is a heat diffusion layer, and the recording thin film layer can be brought closer together. Since the recording thin film layer is rapidly cooled, the recorded marks become a uniform amorphous state, and it is possible to prevent the occurrence of an uneven state during crystallization and erasure that would occur if the recorded marks were uneven. Embodiment Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In Fig. 1, l is a disk substrate made of a resin substrate such as polycarbonate, but this disk substrate 1 is made of a resin substrate or a photopolymer with grooves formed in advance for guiding the laser beam.Glass with grooves formed using the so-called 2P method It can be a substrate with grooves formed directly on the glass plate. 2 is the first dielectric layer, which is made of a mixed film of ZnS-8i02, and the film thickness is about 150 rv. 3 is the recording thin film layer. Te, Ge, Sb and Te, Ge, Sb
It has a matrix structure of nitride or oxide of one of the elements, and the film thickness is about 30 nm.
４は第二の誘電体層で第一の誘電体層２と同じ材料から
なっており、膜厚は約２０ｎｍであム ５はＡ１合金か
らなる反射層で膜厚は約６０ｎｍであムロは保護板で接
着剤７によってディスク基板１に貼り合わせていＺ
第１図の構成において記録・消去及び再生は矢印８の方
向より、情報に応じて強度変調を施したレーザ光を照射
して、また反射光を検出して行うものである。この誘電
体層 記録薄膜層 反射層の形成方法どして（戴 一般
的には真空蒸着あるいはスパッタ法が用いるられる。こ
の時、記録薄膜層３をＴｅ、Ｇｅ、ＳｂとＴｅ、Ｇｅ、
Ｓｂの中の一つの元素の窒化物または酸化物のマトリッ
クス構成にすることによって、記録消去の繰り返しに伴
う誘電体層の脈動によって、記録薄膜材料が案内溝に沿
って移動する現象を抑制することができ、これによって
記録・消去の繰り返し特性を向上することができるもの
であり池 第一、第二の誘電体層２、４のＺｎＳ−３
ｉ０２混合膜はＳｉＯ２の比率を２０ｍｏｌ％にしてい
るがこれに限定するものではなＬｓ ＬかしなからＳ
ｉＯ２の比率を５ ｍｏｌ％以下にすると、ＺｎＳにＳ
ｉＯ２を混合した時に得られる効果 すなわち結晶粒径
を小さくするという効果が小さくなり、 ５０ｍｏｌ％
以上にすると、５１０２膜の性質が大きくなるものであ
るか収Ｓｉ○２の比率は５〜４０ｍｏｌ％の範囲にする
のが適当であっ九
さらに第二の誘電体層４の膜厚を約２０ｎｍと薄くして
いる力（これよって熱拡散層となる反射層５と記録薄膜
層３が近くなり、記録・消去時の記録薄膜層３の熱が急
速に反射層５に伝達されることになって、記録薄膜層３
を急冷する上で効果があるものである。4 is a second dielectric layer made of the same material as the first dielectric layer 2 and has a thickness of about 20 nm. 5 is a reflective layer made of A1 alloy and has a thickness of about 60 nm and has no unevenness. A protection plate is bonded to the disk substrate 1 with an adhesive 7. In the configuration shown in FIG. This is done by detecting reflected light. The dielectric layer, the recording thin film layer, and the reflective layer are generally formed by vacuum deposition or sputtering.
By forming a matrix structure of nitride or oxide of one element in Sb, the phenomenon in which the recording thin film material moves along the guide groove due to pulsation of the dielectric layer due to repeated recording and erasing is suppressed. The ZnS-3 of the first and second dielectric layers 2 and 4 can improve the repeatability of recording and erasing.
The i02 mixed film has a SiO2 ratio of 20 mol%, but it is not limited to this.
When the iO2 ratio is lower than 5 mol%, S
The effect obtained when mixing iO2, that is, the effect of reducing the crystal grain size, becomes smaller, and 50 mol%
Based on the above, it is appropriate to set the ratio of absorbed Si○2 in the range of 5 to 40 mol% to increase the properties of the 5102 film. and the force that makes it thin (this brings the reflective layer 5, which serves as a heat diffusion layer, and the recording thin film layer 3 closer together, and the heat of the recording thin film layer 3 during recording and erasing is rapidly transmitted to the reflective layer 5. Then, the recording thin film layer 3
It is effective in rapidly cooling.
本実施例のディスク構成で、外径１３０ｍａ１８００
ｒｐｍ回Ｌ 線速度８ ｍ／ｓｅｃでｆ １ ＝３．４
３ＭＨｚの信号ｆ ２ ＝ １．０ＭＨｚの信号のオー
バーライド特性を測定しｋ オーバーライド（友 １個
のサークルスポットで約１μｍのレーザ光により、高い
パワーレベル１ロｍＷ、 低いパワーレベル８ｍＷの
間の変調で、高いパワーレベルで非晶質化マークを形成
し 低いパワーレベルで非晶質化マークを結晶化して消
去する同時消録の方法で行つ九 この結果 記録信号の
Ｃ／Ｎ比として（よ ５５ｄＢ以上が得られ 消去特性
として、オーバライド消去率３０ｄＢ以上が得られた
オーバライドのサイクル特性については 特にピットエ
ラーレイトの特性を測定した結果 従来では１００００
０サイクルで劣化していたのが１００００００サイクル
以上劣化が見られなかっに
発明の効果
以上 説明したように記録薄膜層をＴｅ、Ｇｅ、Ｓｂｃ
！＝Ｔｅ、Ｇｅ、Ｓｂの中の一つ元素の窒化物または酸
化物のマトリックス構成にすることによって、記録・消
去の繰り返しに伴い発生する誘電体層の脈動によ衣 記
録薄膜材料の案内溝に沿っての移動を抑制することがで
き、繰り返し特性を向上することができるものであム
また 記録薄膜と反射層の間の誘電体層を薄くした急冷
構成にすることによって、熱衝撃の低減による繰り返し
特性の向上 記録マークの均一化による消去特性の向上
をはかることができるものである。With the disk configuration of this example, the outer diameter is 130 mm and 1800 mm.
f 1 = 3.4 at rpm times L linear velocity 8 m/sec
We measured the override characteristics of a 3 MHz signal f 2 = 1.0 MHz signal. This is done using a simultaneous erasure method in which an amorphous mark is formed at a high power level and then crystallized and erased at a low power level.As a result, the C/N ratio of the recorded signal is approximately 55 dB. As a cancellation characteristic, an override cancellation rate of 30 dB or more was obtained.
Regarding the cycle characteristics of override, we measured the characteristics of pit error rate in particular.
The effect of the invention is greater than the fact that the deterioration occurred after 0 cycles but no deterioration was observed after 1,000,000 cycles.As explained above, the recording thin film layer was made of Te, Ge, Sbc.
! = By creating a matrix structure of nitride or oxide of one element among Te, Ge, and Sb, the pulsation of the dielectric layer that occurs with repeated recording and erasing can be applied to the guide groove of the recording thin film material. By using a rapid cooling structure with a thin dielectric layer between the recording thin film and the reflective layer, thermal shock can be reduced. Improving repeatability It is possible to improve erasing characteristics by making recorded marks uniform.
第１図は本発明の一実施例における光記録媒体の一部省
略断面図であも
１・・・ディスク基板、 ２・・・第一の誘電体層 ３
・・・記録薄膜層 ４・・・第二の誘電体層 ５・・・
反射胤代理人の氏名 弁理士 粟野重孝 はか１名第１
図
６保１桶FIG. 1 is a partially omitted sectional view of an optical recording medium according to an embodiment of the present invention. 1... Disc substrate 2... First dielectric layer 3
...Recording thin film layer 4...Second dielectric layer 5...
Name of reflective seed agent Patent attorney Shigetaka Awano Haka 1 person 1st
Figure 6: 1 bucket
Claims (8)
て昇温、溶融し、急冷して非晶質化する性質と、非晶質
の状態を昇温することにより、結晶化する性質を有する
記録薄膜層を有した光記録媒体であって、前記記録薄膜
層がＴｅ、Ｇｅ、ＳｂとＴｅ、Ｇｅ、Ｓｂの中の少なく
とも一つの元素の窒化物とのマトリックス構成であるこ
とを特徴とする光記録媒体。(1) When irradiated with laser light, it absorbs the energy, heats up, melts, and rapidly cools to become amorphous. It also has the property of crystallizing an amorphous state by heating it. An optical recording medium having a recording thin film layer, characterized in that the recording thin film layer has a matrix structure of Te, Ge, Sb and a nitride of at least one element among Te, Ge, and Sb. optical recording medium.
光の照射により、そのエネルギーを吸収して昇温、溶融
し、急冷して非晶質化する性質と非晶質の状態を昇温す
ることにより結晶化する性質を有する記録薄膜層と、第
二の誘電体層と、反射層とを順次形成した光記録媒体で
あって、前記記録薄膜層がＴｅ、Ｇｅ、ＳｂとＴｅ、Ｇ
ｅ、Ｓｂの中の少なくとも一つの元素の窒化物とのマト
リックス構成であることを特徴とする光記録媒体。(2) A first dielectric layer is provided on one side of the transparent substrate, and when irradiated with laser light, it absorbs the energy, heats up, melts, and rapidly cools to become amorphous. An optical recording medium in which a recording thin film layer having a property of crystallizing by increasing the temperature, a second dielectric layer, and a reflective layer are sequentially formed, the recording thin film layer comprising Te, Ge, Sb. and Te,G.
An optical recording medium characterized in that it has a matrix structure with a nitride of at least one element among e and Sb.
し、第二の誘電体層の膜厚を３０ｎｍ以下にすることを
特徴とする請求項２記載の光記録媒体。(3) The optical recording medium according to claim 2, wherein the second dielectric layer is thinner than the first dielectric layer, and the second dielectric layer has a thickness of 30 nm or less. .
の混合膜のＳｉＯ＿２比が５〜４０ｍｏｌ％の材料を用
いることを特徴とする請求項２記載の光記録媒体。(4) ZnS and SiO_2 as first and second dielectric layers
3. The optical recording medium according to claim 2, wherein a material having a SiO_2 ratio of 5 to 40 mol% in the mixed film is used.
て昇温、溶融し、急冷して非晶質化する性質と、非晶質
の状態を昇温することにより、結晶化する性質を有する
記録薄膜層を有した光記録媒体であって、前記記録薄膜
層がＴｅ、Ｇｅ、ＳｂとＴｅ、Ｇｅ、Ｓｂの中の少なく
とも一つの元素の酸化物とのマトリックス構成であるこ
とを特徴とする光記録媒体。(5) When irradiated with laser light, it has the property of absorbing the energy, heating up, melting, and rapidly cooling to become amorphous, and the property of crystallizing an amorphous state by heating it. An optical recording medium having a recording thin film layer, characterized in that the recording thin film layer has a matrix structure of Te, Ge, Sb and an oxide of at least one element among Te, Ge, and Sb. optical recording medium.
光の照射により、そのエネルギーを吸収して昇温、溶融
し、急冷して非晶質化する性質と非晶質の状態を昇温す
ることにより結晶化する性質を有する記録薄膜層と、第
二の誘電体層と、反射層とを順次形成した光記録媒体で
あって、前記記録薄膜層がＴｅ、Ｇｅ、ＳｂとＴｅ、Ｇ
ｅ、Ｓｂの中の少なくとも一つの元素の酸化物とのマト
リックス構成であることを特徴とする光記録媒体。(6) A first dielectric layer is provided on one side of the transparent substrate, and when irradiated with laser light, it absorbs the energy, heats up, melts, and rapidly cools to become amorphous. An optical recording medium in which a recording thin film layer having a property of being crystallized by increasing the temperature, a second dielectric layer, and a reflective layer are sequentially formed, the recording thin film layer comprising Te, Ge, Sb. and Te,G.
An optical recording medium characterized in that it has a matrix structure with an oxide of at least one element among e and Sb.
し、第二の誘電体層の膜厚を３０ｎｍ以下にすることを
特徴とする請求項６記載の光記録媒体。(7) The optical recording medium according to claim 6, wherein the second dielectric layer is thinner than the first dielectric layer, and the second dielectric layer has a thickness of 30 nm or less. .
の混合膜のＳｉＯ＿２比が５〜４０ｍｏｌ％の材料を用
いることを特徴とする請求項６記載の光記録媒体。(8) ZnS and SiO_2 as first and second dielectric layers
7. The optical recording medium according to claim 6, wherein a material having a SiO_2 ratio of 5 to 40 mol% in the mixed film is used.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2113382A JP2639174B2 (en) | 1990-04-27 | 1990-04-27 | Optical recording medium |
| US07/559,166 US5194363A (en) | 1990-04-27 | 1990-07-30 | Optical recording medium and production process for the medium |
| US07/573,246 US5230973A (en) | 1990-04-27 | 1990-08-24 | Method of recording and erasing information in an erasible optical recording medium |
| KR1019910006821A KR950006840B1 (en) | 1990-04-27 | 1991-04-27 | Optical recording medium & production process for the medium |
| US08/904,983 USRE36383E (en) | 1990-04-27 | 1997-08-01 | Optical recording medium and production process for the medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2113382A JP2639174B2 (en) | 1990-04-27 | 1990-04-27 | Optical recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0410980A true JPH0410980A (en) | 1992-01-16 |
| JP2639174B2 JP2639174B2 (en) | 1997-08-06 |
Family
ID=14610885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2113382A Expired - Lifetime JP2639174B2 (en) | 1990-04-27 | 1990-04-27 | Optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2639174B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5948496A (en) * | 1996-09-06 | 1999-09-07 | Ricoh Company, Ltd. | Optical recording medium |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6144693A (en) * | 1984-08-09 | 1986-03-04 | Nippon Telegr & Teleph Corp <Ntt> | Rewriting type photo-recording medium |
| JPS6358636A (en) * | 1986-08-29 | 1988-03-14 | Matsushita Electric Ind Co Ltd | Optical information recording medium |
| JPS6473896A (en) * | 1987-09-14 | 1989-03-20 | Nissin Electric Co Ltd | Formation of instrumental monitor control picture |
| JPH01116937A (en) * | 1987-10-28 | 1989-05-09 | Matsushita Electric Ind Co Ltd | Optical recording, reproducing and erasing material of information |
| JPH0256746A (en) * | 1988-08-19 | 1990-02-26 | Matsushita Electric Ind Co Ltd | Information carrier disk |
-
1990
- 1990-04-27 JP JP2113382A patent/JP2639174B2/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6144693A (en) * | 1984-08-09 | 1986-03-04 | Nippon Telegr & Teleph Corp <Ntt> | Rewriting type photo-recording medium |
| JPS6358636A (en) * | 1986-08-29 | 1988-03-14 | Matsushita Electric Ind Co Ltd | Optical information recording medium |
| JPS6473896A (en) * | 1987-09-14 | 1989-03-20 | Nissin Electric Co Ltd | Formation of instrumental monitor control picture |
| JPH01116937A (en) * | 1987-10-28 | 1989-05-09 | Matsushita Electric Ind Co Ltd | Optical recording, reproducing and erasing material of information |
| JPH0256746A (en) * | 1988-08-19 | 1990-02-26 | Matsushita Electric Ind Co Ltd | Information carrier disk |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5948496A (en) * | 1996-09-06 | 1999-09-07 | Ricoh Company, Ltd. | Optical recording medium |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2639174B2 (en) | 1997-08-06 |
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