JPH0410429A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH0410429A
JPH0410429A JP11388690A JP11388690A JPH0410429A JP H0410429 A JPH0410429 A JP H0410429A JP 11388690 A JP11388690 A JP 11388690A JP 11388690 A JP11388690 A JP 11388690A JP H0410429 A JPH0410429 A JP H0410429A
Authority
JP
Japan
Prior art keywords
stress
pad
conductor
semiconductor
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11388690A
Other languages
Japanese (ja)
Inventor
Junji Ohara
淳史 大原
Kenji Baba
健次 馬場
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP11388690A priority Critical patent/JPH0410429A/en
Publication of JPH0410429A publication Critical patent/JPH0410429A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To alleviate positional deviation due to a stress of a conductor wiring of a semiconductor element by introducing the wiring between a oonductor pad and the element through a roundabout. CONSTITUTION:A semiconductor device is formed of a semiconductor pad 1 and a semiconductor element 2. The element is formed of a base 2b, a collector 2c and an emitter 2e connected with a scribing lane, and roundabout conductor wirings 4a, 5a, 6a and 7a are disposed between the pad 1 and the element 2. Accordingly, even if a rightward stress Fa is applied to the pad 1, it not almost applied to the wiring 4a. Even if a downward stress Fb is applied, the stress is applied directly to the 4a, but the stress is dispersed to the 5a, 6a, and not almost applied to the 7a and the element 2. Thus, the stress due to the positional deviation of the pad 1 is not almost applied to the element 2.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は半導体装置に関し、とくに半導体集積回路の配
線方法に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor device, and more particularly to a wiring method for a semiconductor integrated circuit.

従来の技術 従来半導体集積回路装置を製造する際に、半導体回路基
板とコムとの間を金属ワイヤにより電気的に連結するた
め、半導体回路基板上に導電体パッドを設けると同時に
、そのパッドに隣接して、半導体回路の過電圧保護など
を目的として半導体素子を配置することが広く行なわれ
ている。
2. Description of the Related Art Conventionally, when manufacturing a semiconductor integrated circuit device, in order to electrically connect a semiconductor circuit board and a comb with a metal wire, conductive pads are provided on the semiconductor circuit board, and at the same time, conductive pads are provided adjacent to the pads. Therefore, it is widely practiced to arrange semiconductor elements for the purpose of overvoltage protection of semiconductor circuits.

第7図に従来の配線の構成を示す。FIG. 7 shows a conventional wiring configuration.

第7図に示すように、通常、導電体パッド1と、隣接す
る半導体素子2との間は、導電体パッド1の辺の長さあ
るいは半導体素子2のコレクタ2c(またはベース2b
あるいはエミッタ2e)の幅にほぼ等しい幅の導電体配
線4gにより直接電気的に結ばれていた。
As shown in FIG. 7, the distance between the conductor pad 1 and the adjacent semiconductor element 2 is usually the length of the side of the conductor pad 1 or the collector 2c (or base 2b) of the semiconductor element 2.
Alternatively, they were directly electrically connected by a conductor wiring 4g having a width approximately equal to the width of the emitter 2e).

発明が解決しようとする課題 このような従来の半導体装置では、熱衝撃による熱的歪
やワイヤボンドによる機械的歪などが原因で導電体パッ
ド1に応力がかかった時に、その応力が導電体配線4g
を介してそのまま半導体素子2のコレクタ2cまたはベ
ース2bあるいはエミッタ2eに伝達される構成であっ
た。
Problems to be Solved by the Invention In such conventional semiconductor devices, when stress is applied to the conductor pad 1 due to thermal strain due to thermal shock or mechanical strain due to wire bonding, the stress is applied to the conductor wiring. 4g
The configuration was such that the signal was directly transmitted to the collector 2c, base 2b, or emitter 2e of the semiconductor element 2 via the .

したがって、これらの応力により、導電体配線4gに位
置ずれが生じ、半導体素子2のコレクタ2c(またはベ
ース2bあるいはコレクタ2e)とベース2b(または
エミッタ2eあるいはコレフタ2c)とが短絡したり、
あるいは完全に短絡しない場合でも漏れ電流が流れる原
因となっていた。
Therefore, these stresses cause misalignment of the conductor wiring 4g, causing a short circuit between the collector 2c (or base 2b or collector 2e) and base 2b (or emitter 2e or collector 2c) of the semiconductor element 2, or
Alternatively, even if the circuit is not completely short-circuited, it causes leakage current to flow.

本発明はこのような欠点を解決するもので、半導体素子
の導電体配線の応力による位置ずれを軽減することを目
的とするものである。
The present invention is intended to solve these drawbacks, and aims to reduce positional displacement due to stress in conductor wiring of a semiconductor element.

課題を解決するための手段 この課題を解決するために本発明は、導電体パッドと半
導体素子との間の導電体配線を迂回させるものである。
Means for Solving the Problem In order to solve this problem, the present invention bypasses the conductor wiring between the conductor pad and the semiconductor element.

また、導電体配線の全部または一部を、導電体パッドと
別の層に設けたものである。
Further, all or part of the conductor wiring is provided in a layer different from the conductor pad.

作用 この構成により、導電体パッドに加わったずれ応力が導
電体配線を介して半導体素子に直接かからなくなってい
るので、半導体素子上に設けられた導電体配線の位置ず
れあるいは位置ずれにより生じる短絡または漏れ電流の
発生を軽減することとなる。
Effect: With this configuration, the misalignment stress applied to the conductor pad is not directly applied to the semiconductor element via the conductor wiring, so short circuits caused by misalignment or misalignment of the conductor wiring provided on the semiconductor element can be avoided. Alternatively, the occurrence of leakage current can be reduced.

実施例 以下、本発明の一実施例について第1図を参照しながら
説明する。
EXAMPLE Hereinafter, an example of the present invention will be described with reference to FIG.

第1図に示すように、本実施例の半導体装置は半導体パ
ッド1と半導体素子2とで構成され、半導体素子はベー
ス2b、コレクタ2cとスクライブレーン(GVD)に
接続したエミッタ2eからなり、導電体パッド1と半導
体素子2との間には、迂回した導電体配置4a、5a、
6aおよび7aが配しである。
As shown in FIG. 1, the semiconductor device of this embodiment is composed of a semiconductor pad 1 and a semiconductor element 2. The semiconductor element consists of a base 2b, a collector 2c, and an emitter 2e connected to a scribe lane (GVD), and is conductive. Between the body pad 1 and the semiconductor element 2, detoured conductor arrangements 4a, 5a,
6a and 7a are the arrangements.

この構成の導電体配線では、導電体パッド1に図中で左
向きの応力Faがかかっても、導電体配線の4aの部分
には殆んど伝わらない。また図中で下向きの応力Fbが
かかる場合においても、4aには直接応力がかかるが、
5aの部分および6aの部分で応力が分散緩和され、7
aの部分および半導体素子2にはほとんど応力が伝わら
ない。
In the conductor wiring having this configuration, even if a stress Fa directed to the left in the figure is applied to the conductor pad 1, almost no stress Fa is transmitted to the portion 4a of the conductor wiring. Also, when downward stress Fb is applied in the figure, direct stress is applied to 4a, but
The stress is dispersed and relaxed in the portions 5a and 6a, and 7
Almost no stress is transmitted to the portion a and the semiconductor element 2.

このように、本発明の実施例の半導体装置によれば、導
電体パッド1の位置ずれによる応力が半導体素子2にほ
とんど伝わらない。また、導電体パッド1の応力による
位置ずれが原因で導電体パッド1と導電体配線の6aの
部分とが短絡したとしても、特性的に何ら変化がなく、
半導体素子2の短絡または漏れ電流の発生を防ぐことが
できるものである。
In this way, according to the semiconductor device of the embodiment of the present invention, stress due to misalignment of the conductive pad 1 is hardly transmitted to the semiconductor element 2. Further, even if the conductor pad 1 and the portion 6a of the conductor wiring are short-circuited due to positional displacement due to stress of the conductor pad 1, there is no change in characteristics.
This can prevent short circuits in the semiconductor element 2 or occurrence of leakage current.

本発明の他の実施例を第2図、第3図および第4図に示
す。
Other embodiments of the invention are shown in FIGS. 2, 3 and 4.

図に示すように、迂回するための導電体配線には多様な
形態が考えられる。
As shown in the figure, various types of conductor wiring for detouring can be considered.

なお、第5図、第6図に示すように、導電体配H8e、
8fは導電体パッド1とは別の配線層に設け、接続部9
により接続してもよい。
In addition, as shown in FIGS. 5 and 6, the conductor arrangement H8e,
8f is provided in a wiring layer different from the conductor pad 1, and the connecting portion 9
It may also be connected by

発明の効果 以上の実施例の説明からも明らかなように、本発明によ
れば、導電体パッドにかかる応力が半導体素子へほとん
ど伝わらないように構成しているので、応力が原因で発
生する半導体の短絡や漏れ電流を軽減し、半導体集積回
路の性能を向上させることができる。
Effects of the Invention As is clear from the description of the embodiments above, according to the present invention, the structure is such that almost no stress applied to the conductive pad is transmitted to the semiconductor element, so that the stress applied to the conductive pad is hardly transmitted to the semiconductor element. It is possible to reduce short circuits and leakage current, and improve the performance of semiconductor integrated circuits.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明にかかる半導体装置の一実施例の配線パ
ターンの要部平面図、第2図、第3図。 第4図、第5図、第6図は、それぞれ本発明にかかる半
導体装置の他の実施例の配線パターンの要部平面図、第
7図は従来の配線パターンの要部平面図である。 1・・・・・・導電体パッド、2・・・・・・半導体素
子、2b・・・・・・ベース、2c・・・・・・コレク
タ、2e・・・・・・エミッタ、4.5.6.7・・・
・・・導電体配線、8・・・・・・導電体パッドと別の
配線層の導電体配線。 代理人の氏名 弁理士 粟野重孝 はが1名第 図 第 図 第5図 第6図 第7図 第3図 第 図 =14
FIG. 1 is a plan view of a main part of a wiring pattern of an embodiment of a semiconductor device according to the present invention, FIGS. 2 and 3. FIGS. 4, 5, and 6 are plan views of main parts of wiring patterns of other embodiments of the semiconductor device according to the present invention, and FIG. 7 is a plan view of main parts of a conventional wiring pattern. 1...Conductor pad, 2...Semiconductor element, 2b...Base, 2c...Collector, 2e...Emitter, 4. 5.6.7...
...Conductor wiring, 8...Conductor pad and conductor wiring on another wiring layer. Name of agent: Patent attorney Shigetaka Awano (1 person) Figure Figure 5 Figure 6 Figure 7 Figure 3 Figure = 14

Claims (2)

【特許請求の範囲】[Claims] (1)半導体基板上に、導電体パッドと半導体素子とを
設けた半導体装置にあって、前記導電体パッドと隣接す
る前記半導体素子との間に、迂回した導電体配線を設け
た半導体装置。
(1) A semiconductor device in which a conductor pad and a semiconductor element are provided on a semiconductor substrate, and a detoured conductor wiring is provided between the conductor pad and the adjacent semiconductor element.
(2)導電体配線の全部または一部を、導電体パッドと
別の層に設けた請求項1記載の半導体装置。
(2) The semiconductor device according to claim 1, wherein all or part of the conductor wiring is provided in a layer different from the conductor pad.
JP11388690A 1990-04-26 1990-04-26 Semiconductor device Pending JPH0410429A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11388690A JPH0410429A (en) 1990-04-26 1990-04-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11388690A JPH0410429A (en) 1990-04-26 1990-04-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH0410429A true JPH0410429A (en) 1992-01-14

Family

ID=14623594

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11388690A Pending JPH0410429A (en) 1990-04-26 1990-04-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0410429A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998025297A1 (en) * 1996-12-04 1998-06-11 Seiko Epson Corporation Electronic component and semiconductor device, method for manufacturing and mounting thereof, and circuit board and electronic equipment
WO1998025298A1 (en) * 1996-12-04 1998-06-11 Seiko Epson Corporation Semiconductor device, method for manufacture thereof, circuit board, and electronic equipment
JP2005217445A (en) * 1996-12-04 2005-08-11 Seiko Epson Corp Production process of semiconductor device
US8260607B2 (en) 2003-10-30 2012-09-04 Koninklijke Philips Electronics, N.V. Audio signal encoding or decoding

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7470979B2 (en) 1996-12-04 2008-12-30 Seiko Epson Corporation Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board, and electronic instrument
US6608389B1 (en) 1996-12-04 2003-08-19 Seiko Epson Corporation Semiconductor device with stress relieving layer comprising circuit board and electronic instrument
WO1998025297A1 (en) * 1996-12-04 1998-06-11 Seiko Epson Corporation Electronic component and semiconductor device, method for manufacturing and mounting thereof, and circuit board and electronic equipment
US6475896B1 (en) 1996-12-04 2002-11-05 Seiko Epson Corporation Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board, and electronic instrument
US7511362B2 (en) 1996-12-04 2009-03-31 Seiko Epson Corporation Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board, and electronic instrument
US6730589B2 (en) 1996-12-04 2004-05-04 Seiko Epson Corporation Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board, and electronic instrument
JP2005217445A (en) * 1996-12-04 2005-08-11 Seiko Epson Corp Production process of semiconductor device
US7521796B2 (en) 1996-12-04 2009-04-21 Seiko Epson Corporation Method of making the semiconductor device, circuit board, and electronic instrument
US6255737B1 (en) 1996-12-04 2001-07-03 Seiko Epson Corporation Semiconductor device and method of making the same, circuit board, and electronic instrument
WO1998025298A1 (en) * 1996-12-04 1998-06-11 Seiko Epson Corporation Semiconductor device, method for manufacture thereof, circuit board, and electronic equipment
US7183189B2 (en) 1996-12-04 2007-02-27 Seiko Epson Corporation Semiconductor device, circuit board, and electronic instrument
JP4513973B2 (en) * 1996-12-04 2010-07-28 セイコーエプソン株式会社 Manufacturing method of semiconductor device
US7842598B2 (en) 1996-12-04 2010-11-30 Seiko Epson Corporation Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board, and electronic instrument
US7888260B2 (en) 1996-12-04 2011-02-15 Seiko Epson Corporation Method of making electronic device
US8115284B2 (en) 1996-12-04 2012-02-14 Seiko Epson Corporation Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board and electronic instrument
US8384213B2 (en) 1996-12-04 2013-02-26 Seiko Epson Corporation Semiconductor device, circuit board, and electronic instrument
US8260607B2 (en) 2003-10-30 2012-09-04 Koninklijke Philips Electronics, N.V. Audio signal encoding or decoding

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