JPH04101390A - Light emitting element - Google Patents
Light emitting elementInfo
- Publication number
- JPH04101390A JPH04101390A JP2218021A JP21802190A JPH04101390A JP H04101390 A JPH04101390 A JP H04101390A JP 2218021 A JP2218021 A JP 2218021A JP 21802190 A JP21802190 A JP 21802190A JP H04101390 A JPH04101390 A JP H04101390A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- phosphor
- electric conductor
- fluorescent substance
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims abstract description 11
- 239000012212 insulator Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 44
- 229910010272 inorganic material Inorganic materials 0.000 claims description 5
- 239000011147 inorganic material Substances 0.000 claims description 5
- 239000011368 organic material Substances 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 5
- 239000000463 material Substances 0.000 description 14
- 230000005284 excitation Effects 0.000 description 7
- 238000000576 coating method Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000003086 colorant Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は発光素子、特にMIMと螢光体を利用する発光
素子に関し、フラットパネルデイスプレィ等発光素子の
応用分野にはすべて利用できるものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a light emitting device, particularly a light emitting device using MIM and a phosphor, and can be applied to all application fields of light emitting devices such as flat panel displays. be.
[従来の技術] 従来MIM構造の発光素子が知られている。[Conventional technology] 2. Description of the Related Art Light emitting elements having an MIM structure are conventionally known.
二の構造を第2図に示す。基板上にA】等の第1の金属
層を形成し、この表面に絶縁体層を形成し、更にこの表
面に形成したAu等の第2の金属層から構成され、第1
の金属層と第2の金属層との間に電圧を印加することに
よって発光が得られる。The second structure is shown in Figure 2. A first metal layer such as A is formed on the substrate, an insulating layer is formed on this surface, and a second metal layer such as Au is further formed on this surface.
Light emission is obtained by applying a voltage between the metal layer and the second metal layer.
しかし、この発光素子の発光スペクトルは400−1(
loonmの範囲を示す非常にブロードな発光であり、
そのため輝度の大きい3原色の素子が必要とされるデイ
スプレィ装置等にこの発光素子を用いることができなか
った。このような問題点を解決する方法として、特開昭
63−232295かある。これによればその公報の第
1図に示すように螢光体層を第2電極と絶縁体層の間に
挿入することて、螢光体により決まる特定の波長が発光
すると同時に、絶縁体層をトンネルした電子によっても
直接励起されて強い発光が生じるとある。However, the emission spectrum of this light-emitting element is 400-1 (
It is a very broad luminescence that shows a range of 10m,
Therefore, this light emitting element could not be used in display devices and the like that require elements of three primary colors with high brightness. Japanese Patent Laid-Open No. 63-232295 is a method for solving these problems. According to this, as shown in Figure 1 of the publication, by inserting a phosphor layer between the second electrode and the insulator layer, a specific wavelength determined by the phosphor is emitted, and at the same time, the insulator layer It is said that the electrons tunneled through the rays can also be directly excited, producing strong light emission.
しかし、この構成では形成された絶縁体層の膜厚が20
−30人と非常に薄いため、螢光体層形成時の損傷か無
視できず、結果として素子の安定性や再現性に問題があ
る。又、螢光体層の膜厚も10−20人と非常に薄く、
螢光体として十分な特性を得るためには、粒径が数μm
必要であることを考えれば、この膜厚では十分な発光強
度は得られない事が予想できる。更にトンネルした電子
による励起を考えたとき、電子のエネルギーは印加した
電圧によって決まり、一方、トンネルした電子は数eV
程度であることから、用いる螢光体材料の特性によって
は発光しないことか考えられる。However, in this configuration, the thickness of the formed insulator layer is 20
-30 Since it is extremely thin, damage during formation of the phosphor layer cannot be ignored, resulting in problems with the stability and reproducibility of the device. In addition, the thickness of the phosphor layer is very thin, only 10-20 mm.
In order to obtain sufficient characteristics as a phosphor, the particle size must be several μm.
Considering that it is necessary, it can be predicted that sufficient emission intensity cannot be obtained with this film thickness. Furthermore, when considering excitation by tunneled electrons, the energy of the electrons is determined by the applied voltage; on the other hand, the energy of tunneled electrons is several eV.
Therefore, it may not emit light depending on the characteristics of the phosphor material used.
[発明が解決しようとする課題]
本発明は高輝度でしかも安定で再現性よく作製できる発
光素子を提供しようとするものである。[Problems to be Solved by the Invention] An object of the present invention is to provide a light-emitting element that has high luminance, is stable, and can be manufactured with good reproducibility.
[課題を解決するための手段]
上記課題を解決するための本発明の構成は、特許請求の
範囲に記載のとおりの発光素子である。[Means for Solving the Problems] The structure of the present invention for solving the above problems is a light emitting device as described in the claims.
第1図に本発明による素子の構造を示す。本発明では図
に示すような位置に螢光体層を形成することで、従来技
術の欠点であった絶縁体層への損傷を回避し、安定でし
かも再現性のある素子が実現でき、かつ発光強度も向上
する。又、各螢光体層の組み合わせによって、各螢光体
の発光色の加色混合や、各螢光体の発光強度を印加電圧
によって調整することで、電圧制御による多色発光素子
か実現できる。FIG. 1 shows the structure of a device according to the present invention. In the present invention, by forming the phosphor layer in the position shown in the figure, damage to the insulator layer, which was a drawback of the conventional technology, can be avoided, and a stable and reproducible device can be realized. Emission intensity also improves. In addition, by combining the phosphor layers, it is possible to create a multicolor light-emitting device by controlling the voltage by additively mixing the emitted light colors of each phosphor and adjusting the emission intensity of each phosphor by applying voltage. .
螢光体の励起についてはMIM素子からの発光による励
起とトンネル電子による励起の2通りか考えられるか、
各螢光体層をトンネル電子で励起するためには、絶縁体
層、第1.2の導電体層それぞれの膜厚か非常に薄い必
要がある。Regarding the excitation of the phosphor, there are two possible ways: excitation by light emission from the MIM element and excitation by tunnel electrons.
In order to excite each phosphor layer with tunneling electrons, it is necessary that the insulator layer and the first and second conductor layers are each very thin.
また、同時に各層それぞれか透光性を有する必要がある
。Furthermore, each layer must also have translucency.
無機材料螢光体については特に制限はないが、トンネル
電子で励起する場合、トンネルした電子のエネルギーが
数eV程度であることを考えると螢光体層の材料として
は、低速電子線用螢光体が望ましい。又、MIM素子か
らの発光で各螢光体層を励起する場合、各螢光体の励起
波長か400nm以下であることが望ましい。There are no particular restrictions on the inorganic material phosphor, but considering that when excited by tunneling electrons, the energy of the tunneled electrons is about several eV, the material for the phosphor layer is a fluorophore for slow electron beams. body is desirable. Further, when each phosphor layer is excited by light emitted from the MIM element, it is desirable that the excitation wavelength of each phosphor is 400 nm or less.
また、第2の螢光体層の作製方法としては、下地への損
傷が小さい方が望ましく、そのため塗布法もしくは真空
蒸着やCVD法なとが望ましい。Further, as a method for producing the second phosphor layer, it is desirable that damage to the underlying layer is small, and therefore a coating method, vacuum evaporation, or CVD method is desirable.
有機材料螢光体については特に制限はないか、有機薄膜
エレクトロルミネッセンスの発光層材料に用いることが
できる螢光体か望ましい。There are no particular restrictions on the organic material phosphor, and it is desirable that it be a phosphor that can be used as a material for a light-emitting layer of organic thin film electroluminescence.
第1の螢光体層の作製方法としては、特に制限はないが
、有機螢光体材料自身への損傷が少ない方法が望ましい
。すなわち、蒸着法やLB法や塗布法が望ましい。There are no particular restrictions on the method for producing the first phosphor layer, but a method that causes little damage to the organic phosphor material itself is desirable. That is, a vapor deposition method, an LB method, or a coating method is preferable.
又、第2の螢光体層の作製方法としては、下地への損傷
が小さい方が望ましく、そのため塗布法もしくは真空蒸
着法などが望ましい。Further, as a method for producing the second phosphor layer, it is desirable that damage to the underlying layer is small, and therefore a coating method or a vacuum evaporation method is preferable.
基板については特に制限はないが、発光の取り出し方向
を基板側とした場合、透光性を有する必要がある。その
際は第1の螢光体層も、透光性を有する必要かある。There are no particular restrictions on the substrate, but if the direction in which light is extracted is from the substrate side, it must be translucent. In that case, the first phosphor layer also needs to have translucency.
[実施例コ 以下、本発明を実施例によって、具体的に説明する。[Example code] Hereinafter, the present invention will be specifically explained with reference to Examples.
実施例1
ここでは第1図に示すような素子構造を有する発光素子
を作製した。基板1には、ガラス基板を用いた。基板の
上に第1の螢光体層5として低速電子線用螢光体材料で
あるZnO: Znを塗布法により形成した。次に、第
1の導電体層6としてAl薄膜を約100λ、抵抗線加
熱により形成した。次に、絶縁体層7として空気中で約
150〜200℃、40分間加熱を行い、A1の表面に
約30〜50λの表面酸化層を形成した。更に第2の導
電体層8としてAu薄膜を約100X、抵抗線加熱によ
り形成した。そして、最後に第2の螢光体層9として、
第1の螢光体層5と同様にZnO: Znを形成した。Example 1 Here, a light emitting device having a device structure as shown in FIG. 1 was manufactured. As the substrate 1, a glass substrate was used. ZnO:Zn, which is a phosphor material for low-speed electron beams, was formed as a first phosphor layer 5 on the substrate by a coating method. Next, an Al thin film having a thickness of about 100λ was formed as the first conductor layer 6 by resistance wire heating. Next, as the insulator layer 7, heating was performed in air at about 150 to 200° C. for 40 minutes to form a surface oxide layer of about 30 to 50 λ on the surface of A1. Furthermore, an Au thin film was formed as a second conductive layer 8 at a thickness of about 100× by resistance wire heating. Finally, as the second phosphor layer 9,
ZnO:Zn was formed in the same manner as the first phosphor layer 5.
なお、本実施例では、螢光体の材料としてZnO:Zn
について示したが、他の低速電子線用螢光体材料を用い
ても同様な結果が得られた。In this example, ZnO:Zn was used as the material of the phosphor.
However, similar results were obtained using other phosphor materials for slow electron beams.
実施例2
ここでは実施例]で作製した素子と同様な構造を有する
素子を作製した。但し、螢光体層5及び9には、励起波
長が420nm付近以下である2Sr0・0.84P
2 05・0.IEiB203 : Eu2+を塗布
法を用いて形成した。Example 2 Here, an element having a structure similar to that of the element manufactured in Example] was manufactured. However, the phosphor layers 5 and 9 contain 2Sr0.0.84P whose excitation wavelength is around 420 nm or less.
2 05・0. IEiB203: Eu2+ was formed using a coating method.
なお、他の層の材料や作製方法については、実施例1と
同様である。Note that the materials and manufacturing methods of other layers are the same as in Example 1.
このようにして作製した素子により、良好な2SrOe
O,84P 205・O,16B 203 : Eu
”螢光体の発光か得られた。The device fabricated in this way provides good 2SrOe
O,84P 205・O,16B 203: Eu
``I got the luminescence of a phosphor.
なお、本実施例では螢光体の材料として2SrO” 0
.84P 2 05 ・O,16B 2 03:Eu
2+について示したか、他の励起波長か400nm以下
である螢光体材料を用いても同様な結果か得られた。In this example, 2SrO" 0 is used as the material of the phosphor.
.. 84P 2 05 ・O, 16B 2 03:Eu
Similar results were obtained using phosphor materials shown for 2+ or other excitation wavelengths below 400 nm.
実施例3
実施例1における第1及び第2の螢光体層5及び9のZ
nO: Znの替わりに、下記に示すような構造をもつ
有機螢光体材料を蒸着法により形成し、絶縁体層7の形
成法として、第1の導電体層6を空気中に10日間放置
して、厚さ約50Å以下の表面自然酸化層を形成させた
以外は、すべて実施例1と同し条件で発光素子を作製し
た。Example 3 Z of the first and second phosphor layers 5 and 9 in Example 1
nO: Instead of Zn, an organic phosphor material having the structure shown below was formed by vapor deposition, and as a method for forming the insulator layer 7, the first conductor layer 6 was left in the air for 10 days. A light emitting device was manufactured under the same conditions as in Example 1, except that a surface natural oxidation layer with a thickness of about 50 Å or less was formed.
H3
このようにして作製した素子を、交流電圧を用い、各導
電体層に印加した。その結果、有機螢光体材料独特の発
光か得られた。H3 An alternating current voltage was applied to each conductive layer of the device thus produced. As a result, luminescence unique to organic phosphor materials was obtained.
なお、本発明による効果は、本実施例に用いた有機螢光
体材料に限らす、他の有機螢光体材料でも同様な効果か
得られた。Note that the effects of the present invention are not limited to the organic phosphor material used in this example, but similar effects were obtained with other organic phosphor materials.
[発明の効果]
以上、説明したように、本発明の発光素子は安定で再現
性か良く、輝度の高い発光をすることができる。[Effects of the Invention] As described above, the light emitting element of the present invention is stable, has good reproducibility, and can emit light with high brightness.
第1図は本発明の発光素子の構成を示す断面の模式図、
第2図は、従来のMIM構造の発光素子の構成を示す断
面の模式図である。FIG. 1 is a schematic cross-sectional view showing the structure of a light-emitting element of the present invention, and FIG. 2 is a schematic cross-sectional view showing the structure of a light-emitting element having a conventional MIM structure.
Claims (2)
面に第1の導電体層とその表面に形成した絶縁体層を有
し、この絶縁体層の表面に第2の導電体層を有し、更に
その表面に、第2の無機材料螢光体層を有し、上記第1
の導電体層と第2の導電体層の間に電圧を印加するよう
な構成を有することを特徴とする発光素子。(1) A first inorganic material phosphor layer is provided on the substrate, a first conductor layer is formed on the surface of the first conductor layer, and a second insulator layer is formed on the surface of the insulator layer. further has a second inorganic material phosphor layer on the surface thereof, and has a second inorganic material phosphor layer on the surface thereof;
1. A light-emitting device characterized by having a configuration in which a voltage is applied between a conductive layer and a second conductive layer.
ぞれ第1及び第2の有機材料螢光体層を有することを特
徴とする請求項(1)記載の発光素子。(2) The light emitting device according to claim (1), characterized in that the first and second inorganic material phosphor layers are replaced by first and second organic material phosphor layers, respectively.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2218021A JPH04101390A (en) | 1990-08-21 | 1990-08-21 | Light emitting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2218021A JPH04101390A (en) | 1990-08-21 | 1990-08-21 | Light emitting element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04101390A true JPH04101390A (en) | 1992-04-02 |
Family
ID=16713389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2218021A Pending JPH04101390A (en) | 1990-08-21 | 1990-08-21 | Light emitting element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04101390A (en) |
-
1990
- 1990-08-21 JP JP2218021A patent/JPH04101390A/en active Pending
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