JPH0396052U - - Google Patents
Info
- Publication number
- JPH0396052U JPH0396052U JP422890U JP422890U JPH0396052U JP H0396052 U JPH0396052 U JP H0396052U JP 422890 U JP422890 U JP 422890U JP 422890 U JP422890 U JP 422890U JP H0396052 U JPH0396052 U JP H0396052U
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- concentration layer
- low concentration
- layer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 230000005669 field effect Effects 0.000 description 3
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP422890U JPH0396052U (sl) | 1990-01-19 | 1990-01-19 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP422890U JPH0396052U (sl) | 1990-01-19 | 1990-01-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0396052U true JPH0396052U (sl) | 1991-10-01 |
Family
ID=31507986
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP422890U Pending JPH0396052U (sl) | 1990-01-19 | 1990-01-19 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0396052U (sl) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003046082A (ja) * | 2001-05-25 | 2003-02-14 | Toshiba Corp | 半導体装置及びその製造方法 |
-
1990
- 1990-01-19 JP JP422890U patent/JPH0396052U/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003046082A (ja) * | 2001-05-25 | 2003-02-14 | Toshiba Corp | 半導体装置及びその製造方法 |
JP4559691B2 (ja) * | 2001-05-25 | 2010-10-13 | 株式会社東芝 | 半導体装置の製造方法 |