JPH0385776A - Element using organic superconductor - Google Patents
Element using organic superconductorInfo
- Publication number
- JPH0385776A JPH0385776A JP1223799A JP22379989A JPH0385776A JP H0385776 A JPH0385776 A JP H0385776A JP 1223799 A JP1223799 A JP 1223799A JP 22379989 A JP22379989 A JP 22379989A JP H0385776 A JPH0385776 A JP H0385776A
- Authority
- JP
- Japan
- Prior art keywords
- bedt
- ttf
- single crystal
- organic
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- LZJCVNLYDXCIBG-UHFFFAOYSA-N 2-(5,6-dihydro-[1,3]dithiolo[4,5-b][1,4]dithiin-2-ylidene)-5,6-dihydro-[1,3]dithiolo[4,5-b][1,4]dithiine Chemical compound S1C(SCCS2)=C2SC1=C(S1)SC2=C1SCCS2 LZJCVNLYDXCIBG-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000013078 crystal Substances 0.000 abstract description 26
- 230000005668 Josephson effect Effects 0.000 abstract description 12
- 239000004020 conductor Substances 0.000 abstract description 7
- -1 bis (ethylenedithio) tetrathiafulvalene compound Chemical class 0.000 abstract description 5
- 239000002994 raw material Substances 0.000 abstract description 5
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 1
- 239000003960 organic solvent Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- YMWLPMGFZYFLRP-UHFFFAOYSA-N 2-(4,5-dimethyl-1,3-diselenol-2-ylidene)-4,5-dimethyl-1,3-diselenole Chemical compound [Se]1C(C)=C(C)[Se]C1=C1[Se]C(C)=C(C)[Se]1 YMWLPMGFZYFLRP-UHFFFAOYSA-N 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 230000001747 exhibiting effect Effects 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- DTMHTVJOHYTUHE-UHFFFAOYSA-N thiocyanogen Chemical compound N#CSSC#N DTMHTVJOHYTUHE-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XEZNGIUYQVAUSS-UHFFFAOYSA-N 18-crown-6 Chemical compound C1COCCOCCOCCOCCOCCO1 XEZNGIUYQVAUSS-UHFFFAOYSA-N 0.000 description 1
- HGOTVGUTJPNVDR-UHFFFAOYSA-N 2-(4,5-dimethyl-1,3-dithiol-2-ylidene)-4,5-dimethyl-1,3-dithiole Chemical compound S1C(C)=C(C)SC1=C1SC(C)=C(C)S1 HGOTVGUTJPNVDR-UHFFFAOYSA-N 0.000 description 1
- 241000508725 Elymus repens Species 0.000 description 1
- NSFQSQYVVVTHRJ-UHFFFAOYSA-N S=C=N[Cu]N=C=S Chemical compound S=C=N[Cu]N=C=S NSFQSQYVVVTHRJ-UHFFFAOYSA-N 0.000 description 1
- 150000001449 anionic compounds Chemical class 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PDZKZMQQDCHTNF-UHFFFAOYSA-M copper(1+);thiocyanate Chemical compound [Cu+].[S-]C#N PDZKZMQQDCHTNF-UHFFFAOYSA-M 0.000 description 1
- BQVVSSAWECGTRN-UHFFFAOYSA-L copper;dithiocyanate Chemical compound [Cu+2].[S-]C#N.[S-]C#N BQVVSSAWECGTRN-UHFFFAOYSA-L 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910001412 inorganic anion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
この発明は、有機超電導体を用いた素子に関し、より詳
しくは、ジョセフソン効果を示す有機超電導体を用いた
素子に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to an element using an organic superconductor, and more particularly to an element using an organic superconductor exhibiting the Josephson effect.
〈従来の技術〉
従来、ジョセフソン効果を示す素子としては、二つの超
電導体を非常に薄い絶縁層を介して接合したもの、上記
素子において絶縁層の代わりに常導体金属を用いたもの
、超電導体に非常に狭いくびれを作ることにより弱結合
領域を形成したもの、二つの超電導体を非常に小さい領
域で接合したもの等がある。これらは、二つの超電導領
域か弱結合領域を介して接合された構造、つまりジョセ
フソン接合が形成されたものである。<Prior art> Conventional devices exhibiting the Josephson effect include devices in which two superconductors are bonded via a very thin insulating layer, devices in which a normal conductor metal is used instead of the insulating layer in the above devices, and devices that exhibit the Josephson effect. There are those that form a weak coupling region by creating a very narrow constriction in the body, and those that connect two superconductors in a very small region. These have a structure in which two superconducting regions are joined via a weakly coupled region, that is, a Josephson junction is formed.
また、ジョセフソン効果を示す素子であって、有機超電
導体を用いたものとしては、特開昭５８１５７１８２号
公報に示されたように、（ＴＭＴＳＦ）２Ｘ （Ｘは、
無機陰イオンを示す）で表されるテトラメチルテトラチ
アフルバレン（以下、「ＴＭＴＳＦＪという）系化合物
の単結晶を用いたものが提案されている。Furthermore, as an element exhibiting the Josephson effect and using an organic superconductor, as shown in Japanese Patent Application Laid-Open No. 58157182, (TMTSF)2X (X is
It has been proposed to use a single crystal of a tetramethyltetrathiafulvalene (hereinafter referred to as "TMTSFJ") compound represented by an inorganic anion.
（ＴＭＴＳＦ）２Ｘは、疑似１次元性電導体であるので
、その結晶の一部をバイエルス転移させて、絶縁領域と
することができる。Since (TMTSF)2X is a pseudo-one-dimensional conductor, a part of its crystal can be subjected to Beiers transition to form an insulating region.
上記素子は、（ＴＭＴＳＦ）２Ｘからなる二つの超電導
体間に絶縁領域を設けたものである。このため、この素
子は、二つの超電導体とその間の絶縁領域とがジョセフ
ソン接合を形成しており、ジョセフソン効果を示す。The above device has an insulating region between two superconductors made of (TMTSF)2X. Therefore, in this element, the two superconductors and the insulating region between them form a Josephson junction, and exhibit the Josephson effect.
この素子は、（ＴＭＴＳＦ）２Ｘの単結晶を用いて製造
され、該単結晶の所定部分に、ＩＫｅＶ以上のエネルギ
ーを有する粒子の極細ビームを照射し、当該部分を絶縁
領域とすることにより製造される。This device is manufactured using a (TMTSF) 2X single crystal, and is manufactured by irradiating a predetermined portion of the single crystal with an ultrafine beam of particles having an energy of IKeV or higher, and making the portion an insulating region. Ru.
〈発明が解決しようとする課題〉
しかし、上記素子に用いられる超電導体である（ＴＭＴ
ＳＦ）２Ｘは、疑似−次元電導体であるので、高エネル
ギー粒子の照射によってその結晶内に欠陥や損傷が形成
されるという問題があった。<Problem to be solved by the invention> However, the superconductor used in the above element (TMT
Since SF)2X is a pseudo-dimensional conductor, there is a problem in that defects and damage are formed in its crystal by irradiation with high-energy particles.
また、（ＴＭＴＳＦ）２Ｘの単結晶は針状結晶であるた
め、素子として使用することは困難であった。Furthermore, since the single crystal of (TMTSF)2X is a needle-like crystal, it has been difficult to use it as an element.
さらに、（ＴＭＴＳＦ）２ Ｘのうち、（ＴＭＴＳＦ）
２ Ｃｇ０４は、常圧下で超電導を示すが、その臨界温
度（以下、ｒＴｃＪという）は１．４にと低く、また、
（ＴＭＴＳ Ｆ）２ Ｃｌ３０４以外の（ＴＭＴＳＦ）
２Ｘは、高圧ｆてなければ超電導を示さないため、この
素子をジョセフソン効果を示す素子として使用すること
は困難であった。Furthermore, out of (TMTSF)2X, (TMTSF)
2 Cg04 exhibits superconductivity under normal pressure, but its critical temperature (hereinafter referred to as rTcJ) is as low as 1.4, and
(TMTSF)2 Other than Cl304 (TMTSF)
Since 2X does not exhibit superconductivity unless a high voltage f is applied, it has been difficult to use this element as an element exhibiting the Josephson effect.
また、上記素子は、高エネルギーを有する粒子ビームを
、（ＴＭＴＳＦ）２Ｘの単結晶に照射することにより製
造されるが、該ビームにより上記単結晶が損傷をうける
虞れがあるという問題もあった。Furthermore, although the above device is manufactured by irradiating a (TMTSF) 2X single crystal with a particle beam having high energy, there is a problem that the single crystal may be damaged by the beam. .
これらの問題のため、上記素子は、実用化されるにいた
っていない。Because of these problems, the above device has not been put into practical use.
この発明は、充分に実用に供する有機超電導体を用いた
素子、特にジョセフソン効果を示す素子を提供すること
を目的とする。An object of the present invention is to provide a device using an organic superconductor that can be put to practical use, particularly a device exhibiting the Josephson effect.
く課題を解決するための手段および作用〉上記問題を解
決するためのこの発明の有機超電導体を用いた素子は、
ビス（エチレンジチオ）テトラチアフルバレン（以下、
ｒＢＥＤＴ−ＴＴＦＪという）系化合物からなる二つの
有機超電導体が、厚さ１０〜１０００Åの常電導金属か
らなる金属層を介して接合されていることを特徴とする
。Means and operation for solving the above problems> A device using the organic superconductor of the present invention for solving the above problems has the following features:
Bis(ethylenedithio)tetrathiafulvalene (hereinafter referred to as
It is characterized in that two organic superconductors made of a (rBEDT-TTFJ) type compound are bonded via a metal layer made of a normal conducting metal with a thickness of 10 to 1000 Å.
上記構成の有機超電導体を用いた素子であれば、二つの
有機超電導体が、厚さ１０〜１０００Åの常電導金属か
らなる金属層を介して接合されているので、二つの有機
超電導体と金属層とがジョセフソン結合を形成しており
、この素子はジョセフソン効果を示す。In the case of an element using an organic superconductor having the above structure, two organic superconductors are bonded via a metal layer made of a normal conducting metal with a thickness of 10 to 1000 Å, so the two organic superconductors and the metal The layers form a Josephson coupling, and this device exhibits the Josephson effect.
この素子を製造する際には、有機超電導体に対する高エ
ネルギー粒子の照射を必要としないので、有機超電導体
が損傷を受ける虞れはない。When manufacturing this device, it is not necessary to irradiate the organic superconductor with high-energy particles, so there is no risk of damage to the organic superconductor.
ＢＥＤＴ−ＴＴＦ系化合物の単結晶は板状であるので、
その単結晶は、素子の材料として好適に用いられる。Since the single crystal of BEDT-TTF type compound is plate-shaped,
The single crystal is suitably used as a material for an element.
上記素子の金属層の厚さを１０〜１０００Åの範囲に限
定したのは、金属層の厚さがＩＯＡ未満の場合は、ピン
ホールができ易く、過大電流が流れ、１．、０００ Ａ
より大きい場合は、電流が流れ難くなり、いずれの場合
も特性上好ましくないからである。また、金属層の厚さ
は、良好なジョセフソン効果を得るうえから、１０〜２
００Ａの範囲であることが特に好ましい。The reason for limiting the thickness of the metal layer of the above device to the range of 10 to 1000 Å is that if the thickness of the metal layer is less than IOA, pinholes are likely to form and excessive current will flow. ,000A
If it is larger, it becomes difficult for current to flow, and either case is unfavorable in terms of characteristics. In addition, the thickness of the metal layer should be 10 to 2 mm in order to obtain a good Josephson effect.
A range of 00A is particularly preferred.
また、金属層を形成する金属としては、金、釦白金等の
常導体金属が挙げられるが、薄膜の作成の容易さ、安定
性等の点から金または白金か好ましい。Further, examples of the metal forming the metal layer include normal conductor metals such as gold and button platinum, but gold or platinum is preferable from the viewpoint of ease of forming a thin film, stability, and the like.
なお、（Ｂ Ｅ Ｄ Ｔ−Ｔ Ｔ Ｆ ） ２ Ｃｕ
（Ｎ ＣＳ ） ２（ジ（イソチオシアナト）銅ジ［ビ
ス（エチレンジチオ）テトラチアフルバレン］）および
（ＢＥＤＴ−ＴＴＦ）２ １３ （トリョードジ［ビ
ス（エチレンジチオ）テトラチアフルバレン］）のＴｃ
は、それぞれ常圧下で２に、常圧下で１１にであり、い
ずれも常圧下において液体ヘリウムによる冷却でバルク
超電導状態とすることができるので、上記素子の有機超
電導体として特に好適に用いられる。In addition, (B E D T-T T F ) 2 Cu
Tc of (NCS) 2 (di(isothiocyanato)copper di[bis(ethylenedithio)tetrathiafulvalene]) and (BEDT-TTF) 2 13 (triododi[bis(ethylenedithio)tetrathiafulvalene])
are 2 and 11 under normal pressure, respectively, and both can be made into a bulk superconducting state by cooling with liquid helium under normal pressure, so they are particularly suitable for use as organic superconductors in the above device.
この素子を製造する場合は、有機溶媒中に電子供与性原
料としてのＢＥＤＴ−ＴＴＦ、およびＩ３ Ｃｕ
（ＮＣＳ）２−等の電子受容体原料（アクセプター）を
溶解させ、０．５〜２μＡの電流を流すことにより、電
気化学的に酸化・還元して行う電解法か、あるいはＢＥ
ＤＴ−ＴＴＦおよび電子受容体原料の拡散により行う拡
散状により、ＢＥＤＴ−ＴＴＦ系化合物の単結晶を製造
する。When manufacturing this element, BEDT-TTF as an electron-donating raw material and I3Cu
(NCS) 2- or other electron acceptor raw materials (acceptor) are dissolved and a current of 0.5 to 2 μA is applied to electrochemically oxidize and reduce the electrolytic method, or BE
A single crystal of a BEDT-TTF-based compound is produced by diffusion of DT-TTF and an electron acceptor raw material.
次いで、該単結晶の一面に、常導体である金属からなる
層を、通常の蒸着法、スパッタリング、ＣＶＤ法等によ
り形成する。Next, a layer made of a metal that is a normal conductor is formed on one surface of the single crystal by a normal vapor deposition method, sputtering, CVD method, or the like.
そして、上記金属層上に、ＢＥＤＴ−ＴＴＦ系化合物の
単結晶を、前述の場合と同様に形成し、二つの超電導体
とその間に形成された金属層とが、ジョセフソン結合を
形成する。Then, a single crystal of a BEDT-TTF compound is formed on the metal layer in the same manner as in the above case, and the two superconductors and the metal layer formed therebetween form a Josephson bond.
〈実施例〉
ＢＥＤＴ−ＴＴＦ３０ｍｇ、ＣｕＳＣＮ７０ｍｇ、ＫＳ
ＣＮ１２６ｍｇおよび１８−クラウン６−エーテル２Ｉ
０ｍｇを、１，１．２−）リクロロエタン９６．４ｍｌ
と２重量％のエタノール３．６ｍｌとを混合した混合溶
媒に溶解した。該溶液を白金電極を有する電解セルに入
れ、２週間２０℃に保ちつつ、０．５μＡの電流を流し
て、（ＢＥＤＴ−ＴＴＦ）２ Ｃｕ （ＳＣＮ）２ （
７）単結晶を成長させた。その結果、白金電極上に６
ｍｍ Ｘ３ｍｍＸ０．１ｍｍの黒色平板状の（ＢＥＤＴ
ＴＴＦ）２ Ｃｕ （ＳＣＮ）２の単結晶１を得た。<Example> BEDT-TTF 30mg, CuSCN 70mg, KS
CN126mg and 18-crown 6-ether 2I
0mg, 1,1.2-)lichloroethane 96.4ml
and 3.6 ml of 2% by weight ethanol were dissolved in a mixed solvent. The solution was placed in an electrolytic cell with a platinum electrode, kept at 20°C for two weeks, and a current of 0.5 μA was applied to (BEDT-TTF)2Cu(SCN)2(
7) Single crystals were grown. As a result, 6
mm x 3mm x 0.1mm black flat plate (BEDT
A single crystal 1 of TTF)2Cu(SCN)2 was obtained.
この単結晶１を取り出して、エタノールで洗浄して、真
空乾燥した後、第２図に示すように、０ｉ結晶１の成長
端面の一つに、金からなる厚さ１５０Δの金属層２を蒸
着した。After taking out the single crystal 1, cleaning it with ethanol, and drying it in vacuum, a metal layer 2 made of gold and having a thickness of 150Δ is deposited on one of the growth end faces of the Oi crystal 1 by vapor deposition, as shown in FIG. did.
次いで、単結晶１に白金リード線を取り付け、金属層２
が上記溶液に浸る状態で、単結晶１を電解セルに戻し、
再び前述の条件下で単結晶を金属層上に形成した。この
結果、第１図に示すように、（ＢＥＤＴ−ＴＴＦ）２
Ｃｕ （ＳＣＮ）２からなるの二つの超電導体が金から
なる金属層を介して接合された構造を有する素子Ａを得
た。Next, a platinum lead wire is attached to the single crystal 1, and the metal layer 2 is
Return the single crystal 1 to the electrolytic cell while it is immersed in the above solution,
A single crystal was formed on the metal layer again under the conditions described above. As a result, as shown in Figure 1, (BEDT-TTF)2
An element A having a structure in which two superconductors made of Cu(SCN)2 were joined through a metal layer made of gold was obtained.
第３図に示すように、上記素子Ａの（ＢＥＤＴ−ＴＴＦ
）２ Ｃｕ （ＳＣＮ）２の二つのＬｌｌ、ｆｌ！ｉ品
部分のそれぞれに、リード線３を有する電圧端子４と電
流端子４′ とを接続し、液体ヘリウムで冷却した状態
における電流−電圧特性をマイクロ波照射下で調べたと
ころ、マイクロ波照射によりＩｃの低−Ｆと定電流ステ
ップが認められ、ジョセフソン接合が形成されているこ
とが確認された。As shown in FIG. 3, (BEDT-TTF
)2 Cu (SCN)2 two Lll, fl! A voltage terminal 4 and a current terminal 4' each having a lead wire 3 were connected to each part of the i-product, and the current-voltage characteristics were examined under microwave irradiation in a state cooled with liquid helium. A low -F of Ic and a constant current step were observed, and it was confirmed that a Josephson junction was formed.
〈発明の効果〉
以上のように、この発明の有機超電導体を用いた素子に
おいては、ジョセフソン接合が形成されており、ジョセ
フソン効果を示すので、センサー等に広く利用すること
ができる。<Effects of the Invention> As described above, in the device using the organic superconductor of the present invention, a Josephson junction is formed and the device exhibits the Josephson effect, so it can be widely used in sensors and the like.
また、ＢＥＤＴ−ＴＴＦ系化合物の単結晶は、平板状で
あり、室温で多量に台底することができるので、この素
子は、容易かつ多量に製造することができる。Further, since the single crystal of the BEDT-TTF compound has a flat plate shape and can be formed in large quantities at room temperature, this device can be easily manufactured in large quantities.
特に、有機超電導体が、（Ｂ Ｅ Ｄ Ｔ −Ｔ Ｔ
Ｆ ）２Ｃｕ （ＮＣ５）２又は（Ｂ Ｅ Ｄ Ｔ
Ｔ Ｔ Ｆ ） ｚ １３である場合、上記化合物は
、常圧下、液体ヘリウムによる冷却によって超電導状態
となるので、その素子がジョセフソン効果を示す状態に
容易に保つことかできるという効果を奏する。In particular, organic superconductors (B E D T -T T
F )2Cu (NC5)2 or (B E D T
When T T F ) z 13, the above-mentioned compound becomes a superconducting state by cooling with liquid helium under normal pressure, so that the device can be easily maintained in a state exhibiting the Josephson effect.
第１図はこの発明にかかる素子の一実施例を示す斜視図
、第２図はこの発明の素子に用いられる有機超電導体の
単結晶に金属層を設けた状態を示す斜視図であり、第３
図は上記素子に端子を接続した状態を示す斜視図である
。
Ａ ・・
素子、
・・単結晶、
２ ・・
常導体。FIG. 1 is a perspective view showing one embodiment of the device according to the present invention, and FIG. 3
The figure is a perspective view showing a state in which terminals are connected to the above element. A...Element,...Single crystal, 2...Normal conductor.
Claims (1)
有機超電導体を用いた素子。[Claims] 1. Two organic superconductors made of bis(ethylenedithio)tetrathiafulvalene compounds are bonded via a metal layer made of a normal conducting metal with a thickness of 10 to 1000 Å. A device using a characteristic organic superconductor. 2. A device using the organic superconductor according to claim 1, wherein the organic superconductor is (BEDT-TTF)_2Cu(NCS)_2 or (BEDT-TTF)_2I_3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1223799A JPH0385776A (en) | 1989-08-30 | 1989-08-30 | Element using organic superconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1223799A JPH0385776A (en) | 1989-08-30 | 1989-08-30 | Element using organic superconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0385776A true JPH0385776A (en) | 1991-04-10 |
Family
ID=16803900
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1223799A Pending JPH0385776A (en) | 1989-08-30 | 1989-08-30 | Element using organic superconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0385776A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010025303A (en) * | 2008-07-24 | 2010-02-04 | Takano Co Ltd | Flow control valve |
| US9362476B2 (en) * | 2010-03-26 | 2016-06-07 | Ohio University | Engineering of an ultra-thin molecular superconductor by charge transfer |
-
1989
- 1989-08-30 JP JP1223799A patent/JPH0385776A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010025303A (en) * | 2008-07-24 | 2010-02-04 | Takano Co Ltd | Flow control valve |
| US9362476B2 (en) * | 2010-03-26 | 2016-06-07 | Ohio University | Engineering of an ultra-thin molecular superconductor by charge transfer |
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