JP2656853B2 - Superconducting element and fabrication method - Google Patents
Superconducting element and fabrication methodInfo
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- JP2656853B2 JP2656853B2 JP2257856A JP25785690A JP2656853B2 JP 2656853 B2 JP2656853 B2 JP 2656853B2 JP 2257856 A JP2257856 A JP 2257856A JP 25785690 A JP25785690 A JP 25785690A JP 2656853 B2 JP2656853 B2 JP 2656853B2
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- superconducting
- thin film
- oxide
- region
- channel
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Description
【発明の詳細な説明】 産業上の利用分野 本発明は、超電導素子およびその作製方法に関する。
より詳細には、新規な構成の超電導素子およびその作製
方法に関する。Description: TECHNICAL FIELD The present invention relates to a superconducting element and a method for manufacturing the same.
More specifically, the present invention relates to a superconducting element having a novel configuration and a method for manufacturing the same.
従来の技術 超電導を使用した代表的な素子に、ジョセフソン素子
がある。ジョセフソン素子は、一対の超電導体をトンネ
ル障壁を介して結合した構成であり、高速スイッチング
動作が可能である。しかしながら、ジョセフソン素子は
２端子の素子であり、論理回路を実現するためには複雑
な回路構成になってしまう。2. Description of the Related Art A typical element using superconductivity is a Josephson element. The Josephson element has a configuration in which a pair of superconductors are coupled via a tunnel barrier, and can perform high-speed switching operation. However, the Josephson element is a two-terminal element, and requires a complicated circuit configuration to realize a logic circuit.
一方、超電導を利用した３端子素子としては、超電導
ベーストランジスタ、超電導FET等がある。第３図に、
超電導ベーストランジスタの概念図を示す。第３図の超
電導ベーストランジスタは、超電導体または常電導体で
構成されたエミッタ21、絶縁体で構成されたトンネル障
壁22、超電導体で構成されたベース23、半導体アイソレ
ータ24および常電導体で構成されたコレクタ25を積層し
た構成になっている。この超電導ベーストランジスタ
は、トンネル障壁22を通過した高速電子を利用した低電
力消費で高速動作する素子である。On the other hand, examples of a three-terminal element utilizing superconductivity include a superconducting base transistor and a superconducting FET. In FIG.
1 shows a conceptual diagram of a superconducting base transistor. The superconducting base transistor shown in FIG. 3 comprises an emitter 21 composed of a superconductor or a normal conductor, a tunnel barrier 22 composed of an insulator, a base 23 composed of a superconductor, a semiconductor isolator 24, and a normal conductor. The collector 25 is stacked. The superconducting base transistor is an element that operates at high speed with low power consumption using high-speed electrons that have passed through the tunnel barrier 22.
第４図に、超電導FETの概念図を示す。第４図の超電
導FETは、超電導体で構成されている超電導ソース電極4
1および超電導ドレイン電極42が、半導体層43上に互い
に近接して配置されている。超電導ソース電極41および
超電導ドレイン電極42の間の部分の半導体層43は、下側
が大きく削られ厚さが薄くなっている。また、半導体層
43の下側表面にはゲート絶縁膜46が形成され、ゲート絶
縁膜46上にゲート電極44が設けられている。FIG. 4 shows a conceptual diagram of a superconducting FET. The superconducting FET shown in FIG. 4 has a superconducting source electrode 4 composed of a superconductor.
1 and the superconducting drain electrode 42 are arranged on the semiconductor layer 43 close to each other. The lower portion of the semiconductor layer 43 between the superconducting source electrode 41 and the superconducting drain electrode 42 is largely shaved and thin. Also, the semiconductor layer
A gate insulating film 46 is formed on the lower surface of 43, and a gate electrode 44 is provided on the gate insulating film 46.
超電導FETは、近接効果で超電導ソース電極41および
超電導ドレイン電極42間の半導体層43を流れる超電導電
流を、ゲート電圧で制御する低電力消費で高速動作する
素子である。The superconducting FET is an element that operates at high speed with low power consumption by controlling the superconducting current flowing through the semiconductor layer 43 between the superconducting source electrode 41 and the superconducting drain electrode 42 by the proximity of the gate voltage.
さらに、ソース電極、ドレイン電極間に超電導体でチ
ャネルを形成し、この超電導チャネルを流れる電流をゲ
ート電極に印加する電圧で制御する３端子の超電導素子
も発表されている。Further, a three-terminal superconducting element in which a channel is formed by a superconductor between a source electrode and a drain electrode and a current flowing through the superconducting channel is controlled by a voltage applied to a gate electrode has been disclosed.
発明が解決しようとする課題 上記の超電導ベーストランジスタおよび超電導FET
は、いずれも半導体層と超電導体層とが積層された部分
を有する。ところが、近年研究が進んでいる酸化物超電
導体を使用して、半導体層と超電導体層との積層構造を
作製することは困難である。また、この構造が作製でき
ても半導体層と超電導体層の間の界面の制御が難しく、
素子として満足な動作をしなかった。PROBLEM TO BE SOLVED BY THE INVENTION Superconducting base transistor and superconducting FET described above
Have a portion where a semiconductor layer and a superconductor layer are laminated. However, it is difficult to produce a stacked structure of a semiconductor layer and a superconductor layer using an oxide superconductor that has been studied in recent years. In addition, even if this structure can be manufactured, it is difficult to control the interface between the semiconductor layer and the superconductor layer,
The device did not operate satisfactorily.
また、超電導FETは、近接効果を利用するため、超電
導ソース電極41および超電導ドレイン電極42を、それぞ
れを構成する超電導体のコヒーレンス長の数倍程度以内
に近接させて作製しなければならない。特に酸化物超電
導体は、コヒーレンス長が短いので、酸化物超電導体を
使用した場合には、超電導ソース電極41および超電導ド
レイン電極42間の距離は、数10nm以下にしなければなら
ない。このような微細加工は非常に困難であり、従来は
酸化物超電導体を使用した超電導FETを再現性よく作製
できなかった。Further, in order to utilize the proximity effect, the superconducting FET has to be manufactured by bringing the superconducting source electrode 41 and the superconducting drain electrode 42 close to each other within several times the coherence length of the superconducting members. In particular, since the oxide superconductor has a short coherence length, when an oxide superconductor is used, the distance between the superconducting source electrode 41 and the superconducting drain electrode 42 must be several tens nm or less. Such microfabrication is very difficult, and conventionally, a superconducting FET using an oxide superconductor could not be produced with good reproducibility.
さらに、従来の超電導チャネルを有する超電導素子
は、変調動作は確認されたが、キャリア密度が高いた
め、完全なオン／オフ動作ができなかった。酸化物超電
導体は、キャリア密度が低いので、超電導チャネルに使
用することにより、完全なオン／オフ動作を行う上記の
素子の実現の可能性が期待されている。しかしながら、
超電導チャネルを5nm以下の厚さにしなければならず、
そのような構成を実現することは困難であった。Further, in the conventional superconducting element having a superconducting channel, a modulation operation was confirmed, but complete on / off operation could not be performed due to a high carrier density. Since the oxide superconductor has a low carrier density, the possibility of realizing the above-mentioned element which performs a complete on / off operation by using it for a superconducting channel is expected. However,
The superconducting channel must be less than 5nm thick,
It has been difficult to realize such a configuration.
そこで本発明の目的は、上記従来技術の問題点を解決
した、新規な構成の超電導素子およびその作製方法を提
供することにある。Therefore, an object of the present invention is to provide a superconducting element having a novel configuration and a method of manufacturing the superconducting element, which has solved the above-mentioned problems of the related art.
課題を解決するための手段 本発明に従うと、基板上に成膜された酸化物超電導薄
膜に形成された超電導チャネルと、該超電導チャネルの
両端近傍に配置されて該超電導チャネルに電流を流すソ
ース電極およびドレイン電極と、前記超電導チャネル上
に配置されて該超電導チャネルに流れる電流を制御する
ゲート電極を具備する超電導素子において、前記酸化物
超電導薄膜が平坦な上面を有するｃ軸配向の薄膜であ
り、前記酸化物超電導薄膜中に前記基板の成分元素と反
応した下側から凸状に突出した領域があり、この領域が
反応によって超電導性を失った非超電導領域であり、前
記酸化物超電導薄膜の前記非超電導領域上に薄い超電導
チャネルを具備することを特徴とする超電導素子が提供
される。Means for Solving the Problems According to the present invention, a superconducting channel formed on an oxide superconducting thin film formed on a substrate, and a source electrode arranged near both ends of the superconducting channel to flow a current through the superconducting channel And a drain electrode, a superconducting element comprising a gate electrode disposed on the superconducting channel and controlling a current flowing through the superconducting channel, wherein the oxide superconducting thin film is a c-axis oriented thin film having a flat top surface, In the oxide superconducting thin film, there is a region that protrudes from the lower side that has reacted with the component elements of the substrate, and this region is a non-superconducting region that has lost superconductivity due to the reaction. A superconducting element is provided, comprising a thin superconducting channel on a non-superconducting region.
また、本発明においては、上記の超電導素子の作製方
法として、基板上にｃ軸配向の酸化物超電導薄膜を形成
する工程と、この酸化物超電導薄膜の一部に局所的に光
が当たるようマスクを形成する工程と、この酸化物超電
導薄膜に光を照射し、マスクされていない部分の酸化物
超電導体と前記基板の成分元素とを、酸化物超電導薄膜
中に下側から凸状に突出した領域で反応させ、この領域
の酸化物超電導体の超電導性を失わせて非超電導領域を
形成する工程とを含むことを特徴とする方法が提供され
る。Further, in the present invention, as a method for manufacturing the above-described superconducting element, a step of forming a c-axis oriented oxide superconducting thin film on a substrate and a mask for locally irradiating light to a part of the oxide superconducting thin film Forming, and irradiating the oxide superconducting thin film with light, the unmasked portion of the oxide superconductor and the component elements of the substrate, projecting from the lower side into the oxide superconducting thin film in a convex shape. Reacting in the region to lose superconductivity of the oxide superconductor in this region to form a non-superconducting region.
作用 本発明の超電導素子は、酸化物超電導体による超電導
チャネルと、超電導チャネルに電流を流すソース電極お
よびドレイン電極と、超電導チャネルを流れる電流を制
御するゲート電極とを具備する。本発明の超電導素子で
は、各電極は必ずしも超電導電極である必要がない。The superconducting element of the present invention includes a superconducting channel made of an oxide superconductor, a source electrode and a drain electrode for flowing a current through the superconducting channel, and a gate electrode for controlling a current flowing through the superconducting channel. In the superconducting element of the present invention, each electrode does not necessarily need to be a superconducting electrode.
また、従来の超電導FETが、近接効果を利用して半導
体中に超電導電流を流すのに対し、本発明の超電導素子
では、主電流は超電導体中を流れる。従って、従来の超
電導FETを作製するときに必要な微細加工技術の制限が
緩和される。Further, while the conventional superconducting FET uses a proximity effect to flow a superconducting current through a semiconductor, in the superconducting element of the present invention, a main current flows through the superconductor. Therefore, the limitation of the fine processing technology required when manufacturing the conventional superconducting FET is eased.
超電導チャネルは、ゲート電極に印加された電圧で開
閉させるために、ゲート電極により発生される電界の方
向で、厚さが5nm以下でなければならない。本発明の主
眼は、このような極薄の超電導チャネルを実現すること
にある。本発明の超電導素子では、酸化物超電導薄膜を
構成する酸化物超電導体と反応した基板の成分元素によ
り酸化物超電導薄膜中に非超電導領域が形成され、この
非超電導領域により薄くなった超電導部分を超電導チャ
ネルとする。The superconducting channel must be less than 5 nm thick in the direction of the electric field generated by the gate electrode in order to open and close with the voltage applied to the gate electrode. The main point of the present invention is to realize such an ultra-thin superconducting channel. In the superconducting element of the present invention, a non-superconducting region is formed in the oxide superconducting thin film by a component element of the substrate that has reacted with the oxide superconductor constituting the oxide superconducting thin film. This is a superconducting channel.
本発明の超電導素子では、上記の非超電導領域によ
り、極薄の超電導チャネルを形成する。従って、この非
超電導領域は、超電導素子の超電導チャネル部分の下側
となる酸化物超電導薄膜の一部に形成されなければなら
ない。従って、本発明の方法では、例えば、レーザ装
置、ハロゲンランプ等を使用して酸化物超電導薄膜の超
電導チャネルとなる部分に局所的に光を照射し、下方の
基板の成分元素と反応させる。In the superconducting element of the present invention, an extremely thin superconducting channel is formed by the non-superconducting region. Therefore, this non-superconducting region must be formed in a part of the oxide superconducting thin film below the superconducting channel portion of the superconducting element. Therefore, in the method of the present invention, for example, a portion to be a superconducting channel of the oxide superconducting thin film is locally irradiated with light using a laser device, a halogen lamp, or the like, so as to react with a component element of a lower substrate.
本発明の超電導素子において、基板には、MgO、SrTiO
3等の酸化物単結晶基板が使用可能である。これらの基
板上には、配向性の高い結晶からなる酸化物超電導薄膜
を成長させることが可能であるので好ましい。また、表
面に絶縁層を有する半導体基板を使用することもでき
る。In the superconducting element of the present invention, MgO, SrTiO
An oxide single crystal substrate such as 3 can be used. On these substrates, an oxide superconducting thin film composed of highly oriented crystals can be grown, which is preferable. Alternatively, a semiconductor substrate having an insulating layer on the surface can be used.
また、本発明の超電導素子には、Ｙ−Ba−Cu−Ｏ系酸
化物超電導体、Bi−Sr−Ca−Cu−Ｏ系酸化物超電導体、
Tl−Ba−Ca−Cu−Ｏ系酸化物超電導体等任意の酸化物超
電導体を使用することができる。Further, the superconducting element of the present invention, a Y-Ba-Cu-O-based oxide superconductor, Bi-Sr-Ca-Cu-O-based oxide superconductor,
Any oxide superconductor such as a Tl-Ba-Ca-Cu-O-based oxide superconductor can be used.
以下、本発明を実施例により、さらに詳しく説明する
が、以下の開示は本発明の単なる実施例に過ぎず、本発
明の技術的範囲をなんら制限するものではない。Hereinafter, the present invention will be described in more detail with reference to examples. However, the following disclosure is merely an example of the present invention, and does not limit the technical scope of the present invention.
実施例 第１図に、本発明の超電導素子の断面図を示す。第１
図の超電導素子は、基板５上に成膜され、基板成分と反
応して超電導性を失った非超電導領域50が形成された酸
化物超電導薄膜１を有する。酸化物超電導薄膜１の非超
電導領域50の上の部分は、厚さ約5nmの極薄の超電導チ
ャネル10になっている。超電導チャネル10の上には絶縁
層６を介して、ゲート電極４が配置され、酸化物超電導
薄膜１上の超電導チャネル10の両側には、ソース電極２
およびドレイン電極３が配置されている。Embodiment FIG. 1 shows a sectional view of a superconducting element of the present invention. First
The superconducting element shown has an oxide superconducting thin film 1 formed on a substrate 5 and formed with a non-superconducting region 50 which has lost superconductivity by reacting with a substrate component. The portion above the non-superconducting region 50 of the oxide superconducting thin film 1 is an ultra-thin superconducting channel 10 having a thickness of about 5 nm. A gate electrode 4 is arranged on the superconducting channel 10 via an insulating layer 6, and a source electrode 2 is provided on both sides of the superconducting channel 10 on the oxide superconducting thin film 1.
And a drain electrode 3.
第２図を参照して、本発明の超電導素子を本発明の方
法で作製する手順を説明する。まず、第２図（ａ）に示
すような基板５上に第２図（ｂ）に示すよう酸化物超電
導薄膜１を、オフアクシススパッタリング法、反応性蒸
着法、MBE法、CVD法等の方法で形成する。酸化物超電導
薄膜１の厚さは200〜300nmが好ましく、酸化物超電導体
としては、Ｙ−Ba−Cu−Ｏ系酸化物超電導体、Bi−Sr−
Ca−Cu−Ｏ系酸化物超電導体、Tl−Ba−Ca−Cu−Ｏ系酸
化物超電導体が好ましく、ｃ軸配向の薄膜とすることが
好ましい。これは、ｃ軸配向の酸化物超電導薄膜は、基
板と平行な方向の臨界電流密度が大きいからである。基
板５としては、MgO（100）基板、SrTiO3（100）基板等
の絶縁体基板、または表面に、例えばMgAl2O4およびBaT
iO3を積層した絶縁膜を有するSi等の半導体基板が好ま
しい。With reference to FIG. 2, a procedure for manufacturing the superconducting element of the present invention by the method of the present invention will be described. First, an oxide superconducting thin film 1 as shown in FIG. 2 (b) is formed on a substrate 5 as shown in FIG. 2 (a) by a method such as off-axis sputtering, reactive evaporation, MBE, CVD or the like. Formed. The thickness of the oxide superconducting thin film 1 is preferably 200 to 300 nm, and as the oxide superconductor, a Y-Ba-Cu-O-based oxide superconductor, Bi-Sr-
A Ca-Cu-O-based oxide superconductor and a Tl-Ba-Ca-Cu-O-based oxide superconductor are preferable, and a c-axis oriented thin film is preferable. This is because the c-axis oriented oxide superconducting thin film has a large critical current density in a direction parallel to the substrate. As the substrate 5, an insulating substrate such as a MgO (100) substrate or a SrTiO 3 (100) substrate, or a substrate such as MgAl 2 O 4 and BaT
A semiconductor substrate such as Si having an insulating film in which iO 3 is laminated is preferable.
次に、第２図（ｃ）に示すよう酸化物超電導薄膜１上
に絶縁膜16を成膜する。絶縁膜16の厚さは約10nm以上の
トンネル電流が無視できる厚さにする。絶縁膜16にはMg
O等酸化物超電導薄膜との界面で大きな準位を作らない
絶縁体を用いることが好ましく、機械的応力の減少の点
から、酸化物超電導体と組成の近い絶縁膜を酸化物超電
導薄膜１に連続して形成することも好ましい。Next, an insulating film 16 is formed on the oxide superconducting thin film 1 as shown in FIG. The thickness of the insulating film 16 is set to about 10 nm or more so that a tunnel current can be ignored. Mg for insulating film 16
It is preferable to use an insulator that does not form a large level at the interface with the oxide superconducting thin film such as O. An insulating film having a composition close to that of the oxide superconductor is used for the oxide superconducting thin film 1 from the viewpoint of reducing mechanical stress. It is also preferable to form them continuously.
絶縁膜16上に第２図（ｄ）に示すようにフォトレジス
ト膜８を形成し、さらにその上に第２図（ｅ）に示すよ
うにAl等の反射膜９を形成する。反射膜９およびフォト
レジスト膜８を第２図（ｆ）に示すようにエッチングし
て、反射膜91、92、フォトレジスト膜81、82に分割し、
絶縁膜16が露出するような開口部11を設ける。A photoresist film 8 is formed on the insulating film 16 as shown in FIG. 2 (d), and a reflective film 9 of Al or the like is further formed thereon as shown in FIG. 2 (e). The reflection film 9 and the photoresist film 8 are etched as shown in FIG. 2 (f), and divided into reflection films 91 and 92 and photoresist films 81 and 82.
The opening 11 is provided so that the insulating film 16 is exposed.
次いで、上側からレーザ光を照射するか、ランプアニ
ール法により、開口部11の下方の酸化物超電導薄膜１と
基板５を反応させ、第２図（ｇ）に示すよう非超電導領
域50を形成する。この際、酸化物超電導薄膜１の非超電
導領域50の上側には、厚さ約5nmの超電導領域が残り、
超電導チャネル10となるよう、光の照射時間、照射部の
温度を制御する。Next, the oxide superconducting thin film 1 below the opening 11 is reacted with the substrate 5 by irradiating a laser beam from above or by a lamp annealing method to form a non-superconducting region 50 as shown in FIG. 2 (g). . At this time, a superconducting region having a thickness of about 5 nm remains above the non-superconducting region 50 of the oxide superconducting thin film 1,
The irradiation time of light and the temperature of the irradiation part are controlled so that the superconducting channel 10 is formed.
非超電導領域50を形成したら、開口部11に露出してい
る絶縁膜16の表面を洗浄にし、第２図（ｈ）に示すよう
ゲート電極４を、AuまたはTi、Ｗ等の高融点金属、これ
らのシリサイドを材料とし、蒸着法等で形成する。この
際、反射膜91、92上にも同時にゲート電極４と等しい材
料の膜71、72が堆積するが、これらは、フォトレジスト
膜81、82とともに除去する。After the non-superconducting region 50 is formed, the surface of the insulating film 16 exposed in the opening 11 is cleaned, and as shown in FIG. 2 (h), the gate electrode 4 is made of Au or a refractory metal such as Ti, W, or the like. These silicides are used as materials and formed by a vapor deposition method or the like. At this time, films 71 and 72 made of the same material as the gate electrode 4 are simultaneously deposited on the reflection films 91 and 92, but these are removed together with the photoresist films 81 and 82.
最後に、第２図（ｉ）に示すよう、絶縁膜16をエッチ
ングし、ゲート電極の絶縁層６に加工し、ゲート電極の
両側にソース電極２およびドレイン電極３を形成して、
本発明の超電導素子が完成する。絶縁膜16をエッチング
する場合には、必要に応じてサイドエッチを促進し、絶
縁層６の長さを減少させる。Finally, as shown in FIG. 2 (i), the insulating film 16 is etched and processed into the insulating layer 6 of the gate electrode, and the source electrode 2 and the drain electrode 3 are formed on both sides of the gate electrode.
The superconducting element of the present invention is completed. When the insulating film 16 is etched, side etching is promoted as necessary, and the length of the insulating layer 6 is reduced.
本発明の超電導素子を本発明の方法で作製すると、超
電導FETを作製する場合に要求される微細加工技術の制
限が緩和される。また、表面が平坦にできるので、後に
必要に応じ配線を形成することが容易になる。従って、
作製が容易であり、素子の性能も安定しており、再現性
もよい。When the superconducting element of the present invention is manufactured by the method of the present invention, the restriction on the fine processing technology required when manufacturing a superconducting FET is relaxed. Further, since the surface can be flattened, it becomes easy to form wiring later if necessary. Therefore,
It is easy to manufacture, the performance of the element is stable, and the reproducibility is good.
発明の効果 以上説明したように、本発明の超電導素子は、超電導
チャネル中を流れる超電導電流をゲート電圧で制御する
構成となっている。従って、従来の超電導FETのよう
に、超電導近接効果を利用していないので微細加工技術
が不要である。また、超電導体と半導体を積層する必要
もないので、酸化物超電導体を使用して高性能な素子が
作製できる。Effect of the Invention As described above, the superconducting element of the present invention has a configuration in which the superconducting current flowing in the superconducting channel is controlled by the gate voltage. Accordingly, unlike the conventional superconducting FET, the superconducting proximity effect is not used, so that a fine processing technique is unnecessary. Further, since there is no need to stack a superconductor and a semiconductor, a high-performance element can be manufactured using an oxide superconductor.
本発明により、超電導技術の電子デバイスへの応用が
さらに促進される。The present invention further promotes the application of superconducting technology to electronic devices.
第１図は、本発明の超電導素子の概略図であり、 第２図は、本発明の方法により本発明の超電導素子を作
製する場合の工程を示す概略図であり、 第３図は、超電導ベーストランジスタの概略図であり、 第４図は、超電導FETの概略図である。 〔主な参照番号〕 １……酸化物超電導薄膜、 ２……ソース電極、 ３……ドレイン電極、 ４……ゲート電極、５……基板FIG. 1 is a schematic view of a superconducting element of the present invention, FIG. 2 is a schematic view showing a process for producing a superconducting element of the present invention by a method of the present invention, and FIG. FIG. 4 is a schematic diagram of a base transistor, and FIG. 4 is a schematic diagram of a superconducting FET. [Main Reference Numbers] 1 ... Oxide superconducting thin film, 2 ... Source electrode, 3 ... Drain electrode, 4 ... Gate electrode, 5 ... Substrate
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平１−170080（ＪＰ，Ａ) 特開 平１−214178（ＪＰ，Ａ) 特開 昭63−273371（ＪＰ，Ａ) 特開 平２−234479（ＪＰ，Ａ) 特開 昭64−86577（ＪＰ，Ａ) 特開 平１−235287（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-1-170080 (JP, A) JP-A-1-214178 (JP, A) JP-A-63-273371 (JP, A) JP-A-2- 234479 (JP, A) JP-A-64-86577 (JP, A) JP-A-1-235287 (JP, A)
Claims (4)
成された超電導チャネルと、該超電導チャネルの両端近
傍に配置されて該超電導チャネルに電流を流すソース電
極およびドレイン電極と、前記超電導チャネル上に配置
されて該超電導チャネルに流れる電流を制御するゲート
電極を具備する超電導素子において、前記酸化物超電導
薄膜が平坦な上面を有するｃ軸配向の薄膜であり、前記
酸化物超電導薄膜中に前記基板の成分元素と反応した下
側から凸状に突出した領域があり、この領域が反応によ
って超電導性を失った非超電導領域であり、前記酸化物
超電導薄膜の前記非超電導領域上に薄い超電導チャネル
を具備することを特徴とする超電導素子。A superconducting channel formed on an oxide superconducting thin film formed on a substrate; a source electrode and a drain electrode arranged near both ends of the superconducting channel to flow current through the superconducting channel; In a superconducting element including a gate electrode disposed on a channel to control a current flowing through the superconducting channel, the oxide superconducting thin film is a c-axis oriented thin film having a flat upper surface, and There is a region that protrudes from the lower side that has reacted with the component elements of the substrate, and this region is a non-superconducting region that has lost superconductivity due to the reaction, and a thin superconducting region is formed on the non-superconducting region of the oxide superconducting thin film. A superconducting element comprising a channel.
ルの両側の部分に、超電導チャネルよりも厚い超電導領
域を有することを特徴とする請求項１に記載の超電導素
子。2. The superconducting element according to claim 1, wherein a portion of the oxide superconducting thin film on both sides of the superconducting channel has a superconducting region thicker than the superconducting channel.
にソース電極およびドレイン電極が配置されていること
を特徴とする請求項２に記載の超電導素子。3. The superconducting device according to claim 2, wherein a source electrode and a drain electrode are arranged on the superconducting region having a large thickness of the oxide superconducting thin film.
成する工程と、この酸化物超電導薄膜の一部に局所的に
光が当たるようマスクを形成する工程と、この酸化物超
電導薄膜に光を照射し、マスクされていない部分の酸化
物超電導体と前記基板の成分元素とを、酸化物超電導薄
膜中に下側から凸状に突出した領域で反応させ、この領
域の酸化物超電導体の超電導性を失わせて非超電導領域
を形成する工程とを含むことを特徴とする請求項１〜３
のいずれか１項に記載の超電導素子の作製方法。4. A step of forming a c-axis oriented oxide superconducting thin film on a substrate, a step of forming a mask so that light is locally applied to a part of the oxide superconducting thin film, and a step of forming the oxide superconducting thin film. Irradiates the oxide superconductor in the unmasked portion with the component elements of the substrate in a region protruding from the lower side into the oxide superconducting thin film, and reacting the oxide superconductor in this region. Forming a non-superconducting region by losing superconductivity of the body.
The method for producing a superconducting element according to any one of the above.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2257856A JP2656853B2 (en) | 1990-09-27 | 1990-09-27 | Superconducting element and fabrication method |
| CA002052378A CA2052378C (en) | 1990-09-27 | 1991-09-27 | Superconducting device and a method for manufacturing the same |
| DE69114435T DE69114435T2 (en) | 1990-09-27 | 1991-09-27 | Superconducting device and its manufacturing process. |
| EP91402596A EP0478466B1 (en) | 1990-09-27 | 1991-09-27 | A superconducting device and a method for manufacturing the same |
| US08/183,894 US5514877A (en) | 1990-09-27 | 1994-01-21 | Superconducting device and a method for manufacturing the same |
| US08/521,736 US5683968A (en) | 1990-09-27 | 1995-08-31 | Method for manufacturing a superconducting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2257856A JP2656853B2 (en) | 1990-09-27 | 1990-09-27 | Superconducting element and fabrication method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04134886A JPH04134886A (en) | 1992-05-08 |
| JP2656853B2 true JP2656853B2 (en) | 1997-09-24 |
Family
ID=17312121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2257856A Expired - Lifetime JP2656853B2 (en) | 1990-09-27 | 1990-09-27 | Superconducting element and fabrication method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2656853B2 (en) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6486577A (en) * | 1987-05-01 | 1989-03-31 | Nippon Telegraph & Telephone | Preparation of superconductive oxide film |
| JPS63273371A (en) * | 1987-05-01 | 1988-11-10 | Fujikura Ltd | Manufacture of superconducting electric circuit |
| JP2641447B2 (en) * | 1987-05-13 | 1997-08-13 | 株式会社日立製作所 | Superconducting switching element |
| JPH01170080A (en) * | 1987-12-25 | 1989-07-05 | Furukawa Electric Co Ltd:The | Superconducting fet element |
| JPH01214178A (en) * | 1988-02-23 | 1989-08-28 | Mitsubishi Electric Corp | Manufacture of josephson junction |
| JPH01235287A (en) * | 1988-03-15 | 1989-09-20 | Fujitsu Ltd | Patterning method for high-temperature superconducting thin-film |
| JP2973423B2 (en) * | 1989-03-07 | 1999-11-08 | 日本電気株式会社 | Superconducting element and manufacturing method thereof |
-
1990
- 1990-09-27 JP JP2257856A patent/JP2656853B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04134886A (en) | 1992-05-08 |
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