JPH0384892A - Luminous element - Google Patents
Luminous elementInfo
- Publication number
- JPH0384892A JPH0384892A JP1219795A JP21979589A JPH0384892A JP H0384892 A JPH0384892 A JP H0384892A JP 1219795 A JP1219795 A JP 1219795A JP 21979589 A JP21979589 A JP 21979589A JP H0384892 A JPH0384892 A JP H0384892A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- bases
- charge
- implanting
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000126 substance Substances 0.000 claims abstract description 21
- 239000007822 coupling agent Substances 0.000 claims abstract description 5
- 238000002347 injection Methods 0.000 claims description 23
- 239000007924 injection Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 20
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000003607 modifier Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 12
- UVHXEHGUEKARKZ-UHFFFAOYSA-N 1-ethenylanthracene Chemical compound C1=CC=C2C=C3C(C=C)=CC=CC3=CC2=C1 UVHXEHGUEKARKZ-UHFFFAOYSA-N 0.000 abstract description 10
- 230000005684 electric field Effects 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000012528 membrane Substances 0.000 abstract 1
- 238000002791 soaking Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 9
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 6
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 6
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 description 6
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 4
- DXBHBZVCASKNBY-UHFFFAOYSA-N 1,2-Benz(a)anthracene Chemical compound C1=CC=C2C3=CC4=CC=CC=C4C=C3C=CC2=C1 DXBHBZVCASKNBY-UHFFFAOYSA-N 0.000 description 3
- GOLORTLGFDVFDW-UHFFFAOYSA-N 3-(1h-benzimidazol-2-yl)-7-(diethylamino)chromen-2-one Chemical compound C1=CC=C2NC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 GOLORTLGFDVFDW-UHFFFAOYSA-N 0.000 description 3
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 3
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000012756 surface treatment agent Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は有機発光物質を用いた発光素子の発光層の構成
に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a structure of a light emitting layer of a light emitting device using an organic light emitting substance.
[従来の技術]
従来、有機発光物質を用いた発光素子の電荷注入層の形
成法としては塗布法、蒸着法などが知られている(応用
物理学会1989年春季年会予稿集3a−G−7など)
。[Prior Art] Conventionally, coating methods, vapor deposition methods, etc. are known as methods for forming charge injection layers of light emitting devices using organic light emitting substances (Proceedings of the 1989 Spring Annual Meeting of the Japan Society of Applied Physics, 3a-G- 7 etc.)
.
塗布法ではスピンコード法やロールコート法などがある
。蒸着法では抵抗加熱法が一般に用いられる。Coating methods include a spin code method and a roll coat method. A resistance heating method is generally used in the vapor deposition method.
[発明が解決しようとする課M]
しかし塗布法では膜厚制御が難しく、蒸着法では蒸着物
質にかなりの熱が印加されるため蒸着物質が分解される
恐れがある。また、有機化合物は比較的蒸気圧が高いた
め昇華し易く、蒸着法により成膜しにくい、更にこれら
の方法では膜厚制御を数十五のオーダーで制御するこ、
とは非常に難しい、となれば膜厚を厚くしなければなら
ず、膜厚が厚くなれば、電界降下が生じ発光層に電界が
充分印加されなくなる。また、基板と化学的に結合して
いる訳ではないので電極との密着性に欠ける。[Problem M to be Solved by the Invention] However, with the coating method, it is difficult to control the film thickness, and with the vapor deposition method, a considerable amount of heat is applied to the vapor deposited material, so there is a risk that the vapor deposited material may be decomposed. In addition, organic compounds have a relatively high vapor pressure, so they sublimate easily and are difficult to form into films using vapor deposition methods.Furthermore, these methods require film thickness control on the order of tens of thousands of degrees.
If this is the case, the film thickness must be increased, and if the film thickness is increased, an electric field will drop and a sufficient electric field will not be applied to the light emitting layer. Furthermore, since it is not chemically bonded to the substrate, it lacks adhesion to the electrode.
そこで本発明は、電荷注入層としてaKするための必要
最小限の膜厚で均一に塗布できて、しかも基板との密着
性に優れた電荷注入層を備えた発光素子を提供すること
を目的とする。Therefore, an object of the present invention is to provide a light-emitting element equipped with a charge injection layer that can be coated uniformly with the minimum necessary film thickness to achieve aK as a charge injection layer and has excellent adhesion to a substrate. do.
[課題を解決するための手段]
■有機発光層及び電荷注入層とこれを挟持してなる1組
の電極及び基板とからなる発光素子において、前記電荷
注入層が電極上の極薄膜からなることを特徴とする。[Means for Solving the Problems] ■In a light emitting device consisting of an organic light emitting layer and a charge injection layer, and a pair of electrodes and a substrate sandwiching the layers, the charge injection layer is formed of an extremely thin film on the electrode. It is characterized by
■上記電荷注入層が、電荷注入物質に表面改質剤に用い
られるカップリング剤を結合させた化合物からなること
を特徴とする。(2) The charge injection layer is characterized in that it is made of a compound in which a coupling agent used as a surface modifier is bonded to a charge injection substance.
[作用コ
本発明の上記の構成によれば、カップリング剤付き電荷
注入物質溶液に電極付き基板を浸すだけで電極表面に単
分子に近い電荷性、大層を形成でき、この基板を加熱す
れば電極と電荷注入物質の間に共有結合が生成する。そ
のため物理的化学的強度が高い電荷注入層となる。また
電荷注入層が単分子に近くなるために印加電圧が低くて
も発光層に充分電界が印加され発光する。[Function] According to the above structure of the present invention, a large layer with nearly monomolecular charge can be formed on the electrode surface simply by dipping the substrate with the electrode in a solution of the charge injection substance with a coupling agent; A covalent bond is created between the electrode and the charge injection material. Therefore, the charge injection layer has high physical and chemical strength. Furthermore, since the charge injection layer is close to a single molecule, a sufficient electric field is applied to the light emitting layer to emit light even if the applied voltage is low.
以下、実施例により本発明の詳細を示す。Hereinafter, the details of the present invention will be shown by examples.
[実施例1]
す発光素子の断面図である。ここでは、発光物質として
ビニルアントラセンを用い、正孔注入層として、
を用いた例を示す。[Example 1] FIG. 1 is a cross-sectional view of a light emitting device. Here, an example is shown in which vinyl anthracene is used as the light-emitting substance and the following is used as the hole injection layer.
透明電極(ITO)付きガラス基板上に(A)の0.2
%アルコール溶液を塗布し、10分間放置後アルコール
にて基板を洗浄した。この基板を100℃にて5分間焼
成したのち、ビニルアントラセンの5%アルコール溶液
をスピンコードし、発光層の厚さを2000人とした0
発光層の厚みは500人〜1μmの間であればよい、5
00A以下であると、電界を印加した際ショートする可
能性がある。1μm以上であると、印加電圧が高くなり
実用的でない、こうして得られた発光素子に直流電圧1
0ボルト印加したところ発光が認められた。有機発光物
質はビニルアントラセンの他、アントラセン、ピレン、
ベンズアントラセン、ペリレン、テトラセン、ナフタセ
ン、コロネン、クマリン、シクロペンタジェン、キノリ
ン、及びこマリン、シクロペンタジェン、キノリン、及
びこれら有機発光物質の誘導体などが同様に利用できる
。これらの物質を混合して用いることにより様々な色調
の発光を得ることができた。0.2 of (A) on a glass substrate with a transparent electrode (ITO)
% alcohol solution was applied, and after being left for 10 minutes, the substrate was cleaned with alcohol. After baking this substrate at 100°C for 5 minutes, a 5% alcohol solution of vinylanthracene was spin-coded to give a luminescent layer thickness of 2000 nm.
The thickness of the light-emitting layer may be between 500 and 1 μm, 5
If it is 00A or less, there is a possibility that a short circuit will occur when an electric field is applied. If it is 1 μm or more, the applied voltage will be too high and it is not practical.
When 0 volts were applied, light emission was observed. Organic luminescent substances include vinylanthracene, anthracene, pyrene,
Benzanthracene, perylene, tetracene, naphthacene, coronene, coumarin, cyclopentadiene, quinoline, and derivatives of these organic light-emitting substances can also be used. By using a mixture of these substances, it was possible to obtain luminescence of various colors.
[実施例2]
ここでは、発光物質としてビニルアントラセンを用い、
電子注入層として、
(OEt)ssi(CH)4−P V 1’ e n
e −−−(B )を用いた例を示す。[Example 2] Here, vinyl anthracene was used as a luminescent substance,
As an electron injection layer, (OEt)ssi(CH)4-P V 1' e n
An example using e---(B) is shown.
アルミニウム電極付き基板の上に(B)の0゜2%アル
コール溶液を塗布し、10分間放置後アルコールにて基
板を洗浄した。この基板を100°Cにて5分間焼成し
たのち、透明、電極(ITO)付きガラス基板と対向さ
せ基板間距離を0. 5μmに固定して、この間隙にビ
ニルアントラセンを80℃にて封入した。 発光層の
厚みは500λ〜1μmの間であればよい。500A以
下であると、電界を印加した際ショートする可能性があ
る。A 0.2% alcohol solution of (B) was applied onto the substrate with aluminum electrodes, and after being left for 10 minutes, the substrate was washed with alcohol. After baking this substrate at 100°C for 5 minutes, it was placed facing a transparent glass substrate with an electrode (ITO) and the distance between the substrates was set to 0. The gap was fixed at 5 μm, and vinyl anthracene was sealed in this gap at 80°C. The thickness of the light emitting layer may be between 500λ and 1 μm. If it is 500 A or less, there is a possibility that a short circuit will occur when an electric field is applied.
1μm以上であると、印加電圧が高くなり実用的でない
、こうして得られた発光素子に直流電圧3発光物質はビ
ニルアントラセンの他、アントラセン、ピレン、ベンズ
アントラセン、ペリレン、テトラセン、ナフタセン、コ
ロネン、クマリン、シクロペンタジェン、キノリン、及
びこれら有機発光物質の誘導体などが同様に利用できる
。これらの物質を混合して用いることにより様々な色調
の発光を得ることができた。If it is 1 μm or more, the applied voltage becomes high and it is not practical.The DC voltage applied to the thus obtained light-emitting device3 Luminescent substances include, in addition to vinylanthracene, anthracene, pyrene, benzanthracene, perylene, tetracene, naphthacene, coronene, coumarin, Cyclopentadiene, quinoline, and derivatives of these organic light-emitting substances can be similarly utilized. By using a mixture of these substances, it was possible to obtain luminescence of various colors.
[実施例3]
ここでは、発光物質としてビニルアントラセンを用い、
電子注入層として、
(OEt)3si(CH)4−P y r e n e
−−−(B )正孔注入層として、
(OEt)3si(C)]]hNo−Z−、qNEth
−(A)を用いた例を示す。[Example 3] Here, vinyl anthracene was used as a luminescent substance,
As an electron injection layer, (OEt)3si(CH)4-Pyrene
---(B) As a hole injection layer, (OEt)3si(C)]]hNo-Z-, qNEth
An example using -(A) is shown.
アルミニウム電極付き基板の上に(B)の0゜2%アル
コール溶液を塗布し、10分間放置後アルコールにて基
板を洗浄し、100℃にて5分間焼成した。つぎに透明
電極(ITO)付きガラス基板に(A)の0. 2%ア
ルコール溶液を塗布し、10分間放置後アルコールにて
基板を洗浄し、110分間放直後アルコールにて基板を
洗浄し、100°Cにて5分間焼成した。これら2枚の
基板を対向させ基板間距離を0. 5μmに固定して、
この間隙にビニルアントラセンを80℃にて封入した。A 0.2% alcohol solution of (B) was applied onto the substrate with aluminum electrodes, and after being left for 10 minutes, the substrate was washed with alcohol and baked at 100° C. for 5 minutes. Next, 0.0% of (A) was applied to the glass substrate with a transparent electrode (ITO). A 2% alcohol solution was applied, and after being left for 10 minutes, the substrate was washed with alcohol. Immediately after being left for 110 minutes, the substrate was washed with alcohol, and baked at 100° C. for 5 minutes. These two boards are placed facing each other and the distance between the boards is set to 0. Fixed at 5μm,
Vinyl anthracene was sealed in this gap at 80°C.
l!!光層の厚みは500Å〜1μmの間であればよい
、500λ以下であると、電界を印加した際ショートす
る可能性がある。1μm以上であると、印加電圧が高く
なり実用的でない、こうして得られた発光素子に直流電
圧25ボルト印加したところ発光が認められた。有機発
光物質はビニルアントラセンの他、アントラセン、ピレ
ン、ベンズアントラセン、ペリレン、テトラセン、ナフ
タセン、コロネン、クマリン、シクロペンタジェン、キ
ノリン、及びこれら有機発光物質の誘導体などが同様に
利用できる。これらの物質を混合して用いることにより
様々な色調の発光を得ることができた。l! ! The thickness of the optical layer may be between 500 Å and 1 μm; if it is less than 500 λ, there is a possibility of short-circuiting when an electric field is applied. If it is 1 μm or more, the applied voltage becomes too high and is not practical. When a DC voltage of 25 volts was applied to the thus obtained light emitting device, light emission was observed. In addition to vinylanthracene, the organic light-emitting substances may be anthracene, pyrene, benzanthracene, perylene, tetracene, naphthacene, coronene, coumarin, cyclopentadiene, quinoline, and derivatives of these organic light-emitting substances. By using a mixture of these substances, it was possible to obtain luminescence of various colors.
以上実施例を述べたが、電荷注入層に用いた物質はここ
に示したものに限らない、また電極に用いた物質もここ
に示したものに限らない。Although the embodiments have been described above, the materials used for the charge injection layer are not limited to those shown here, and the materials used for the electrodes are not limited to those shown here.
[発明の効果]
以上述べたように本発明によれば、電荷注入層に表面処
理剤に用いるカップリング剤を用いることにより、発光
効率のよい素子を容易に作製することができるようにな
った。[Effects of the Invention] As described above, according to the present invention, by using a coupling agent used as a surface treatment agent in the charge injection layer, an element with high luminous efficiency can be easily manufactured. .
第1図は、本発明の基本構成を表す発光素子の断面図で
ある。
1・・・基板
2・・・電極
3・・・電子注入層
4・・・発光層
5・・・正孔注入層
6・・・電極
7・・・基板
以 上FIG. 1 is a sectional view of a light emitting element showing the basic configuration of the present invention. 1... Substrate 2... Electrode 3... Electron injection layer 4... Light emitting layer 5... Hole injection layer 6... Electrode 7... Substrate and above
Claims (2)
1組の電極及び基板とからなる発光素子において、前記
電荷注入層が電極上の極薄膜からなることを特徴とする
発光素子。(1) A light emitting device comprising an organic light emitting layer, a charge injection layer, and a pair of electrodes and a substrate sandwiching the layers, wherein the charge injection layer is an extremely thin film on the electrode.
用いられるカップリング剤を結合させた化合物からなる
ことを特徴とする請求項1記載の発光素子。(2) The light emitting device according to claim 1, wherein the charge injection layer is made of a compound in which a coupling agent used as a surface modifier is bonded to a charge injection substance.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1219795A JPH0384892A (en) | 1989-08-25 | 1989-08-25 | Luminous element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1219795A JPH0384892A (en) | 1989-08-25 | 1989-08-25 | Luminous element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0384892A true JPH0384892A (en) | 1991-04-10 |
Family
ID=16741150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1219795A Pending JPH0384892A (en) | 1989-08-25 | 1989-08-25 | Luminous element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0384892A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000208254A (en) * | 1999-01-11 | 2000-07-28 | Seiko Epson Corp | Manufacture of organic el element and organic el display unit |
JP2000323276A (en) * | 1999-05-14 | 2000-11-24 | Seiko Epson Corp | Manufacture of organic el element, organic el element, and ink composition |
US6456003B1 (en) | 1999-01-28 | 2002-09-24 | Nec Corporation | Organic electroluminescent devices and panels |
JP2002313577A (en) * | 2001-04-12 | 2002-10-25 | Fuji Xerox Co Ltd | Display device |
JPWO2004054325A1 (en) * | 2002-12-12 | 2006-04-13 | 株式会社半導体エネルギー研究所 | Light emitting device, manufacturing apparatus, film forming method, and cleaning method |
US7201859B2 (en) | 2001-06-25 | 2007-04-10 | Samsung Sdi Co., Ltd. | Hole transport layer and method for manufacturing the organic EL device by using the same |
JP2007103381A (en) * | 2006-12-08 | 2007-04-19 | Seiko Epson Corp | Organic electroluminescent element, manufacturing method thereof, and ink composition |
US7285904B2 (en) | 2001-08-01 | 2007-10-23 | Samsung Sdi Co., Ltd. | Organic EL display with an organic compound derivative layer |
-
1989
- 1989-08-25 JP JP1219795A patent/JPH0384892A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000208254A (en) * | 1999-01-11 | 2000-07-28 | Seiko Epson Corp | Manufacture of organic el element and organic el display unit |
US6456003B1 (en) | 1999-01-28 | 2002-09-24 | Nec Corporation | Organic electroluminescent devices and panels |
JP2000323276A (en) * | 1999-05-14 | 2000-11-24 | Seiko Epson Corp | Manufacture of organic el element, organic el element, and ink composition |
JP2002313577A (en) * | 2001-04-12 | 2002-10-25 | Fuji Xerox Co Ltd | Display device |
US7201859B2 (en) | 2001-06-25 | 2007-04-10 | Samsung Sdi Co., Ltd. | Hole transport layer and method for manufacturing the organic EL device by using the same |
US7285904B2 (en) | 2001-08-01 | 2007-10-23 | Samsung Sdi Co., Ltd. | Organic EL display with an organic compound derivative layer |
JPWO2004054325A1 (en) * | 2002-12-12 | 2006-04-13 | 株式会社半導体エネルギー研究所 | Light emitting device, manufacturing apparatus, film forming method, and cleaning method |
JP5072184B2 (en) * | 2002-12-12 | 2012-11-14 | 株式会社半導体エネルギー研究所 | Deposition method |
US8709540B2 (en) | 2002-12-12 | 2014-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, film-forming method and manufacturing apparatus thereof, and cleaning method of the manufacturing apparatus |
JP2007103381A (en) * | 2006-12-08 | 2007-04-19 | Seiko Epson Corp | Organic electroluminescent element, manufacturing method thereof, and ink composition |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3249971B2 (en) | Electroluminescent element | |
JPH02289676A (en) | Electric field light emitting element | |
JPH0384892A (en) | Luminous element | |
KR20050082951A (en) | Electroluminescent display device having surface treated organic laeyr and method of fabricating the same | |
JPH09279135A (en) | Electroluminescent element | |
JP3359073B2 (en) | Organic thin film EL device | |
JPH05271652A (en) | Organic thin-film el element | |
KR19990012364A (en) | Structure of Polymer / Organic Electroluminescent Device Using Ionomer as Charge Transport Layer and Manufacturing Method Thereof | |
JPH0337991A (en) | Luminous element | |
JP3535659B2 (en) | Manufacturing method of organic EL device | |
JP2008060034A (en) | Organic electroluminescent element, manufacturing method of organic electroluminescent element, illumination device, and display device | |
JPH02289675A (en) | Electric field light emitting element | |
JPH07282975A (en) | Organic electroluminescence(el) element and its manufacture | |
JPH02210790A (en) | Electroluminescent element | |
JP2005310469A (en) | Organic light emitting element | |
JP2003092185A5 (en) | ||
JPH0329293A (en) | Light emitting element and manufacture thereof | |
JPH0320992A (en) | Light emitting element | |
JPH0529077A (en) | Electroluminescence element | |
JPH07228865A (en) | Organic thin-film luminescent element | |
JPH09306667A (en) | Manufacture of organic electroluminescence element | |
JPH04132191A (en) | Organic thin film el element | |
JP4796741B2 (en) | Method for forming a layer containing metal, silicon, germanium and oxygen on a surface | |
JPH0368685A (en) | Electroluminescent element | |
JPH1022075A (en) | Organic led element |