JPH0382035A - Wafer heating device - Google Patents
Wafer heating deviceInfo
- Publication number
- JPH0382035A JPH0382035A JP21897389A JP21897389A JPH0382035A JP H0382035 A JPH0382035 A JP H0382035A JP 21897389 A JP21897389 A JP 21897389A JP 21897389 A JP21897389 A JP 21897389A JP H0382035 A JPH0382035 A JP H0382035A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- plate
- temperature
- gas
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 25
- 239000011261 inert gas Substances 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 abstract description 31
- 239000010949 copper Substances 0.000 abstract description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 30
- 239000010453 quartz Substances 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 238000012544 monitoring process Methods 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 70
- 239000007789 gas Substances 0.000 description 28
- 238000001816 cooling Methods 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 3
- 239000000112 cooling gas Substances 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体ウェハー処理装置において、真空槽内
で不活性ガスの熱伝導を利用してウェハーを加熱する装
置に関し、特にウェハーの温度がモニターできる加熱装
置に関する。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a semiconductor wafer processing apparatus that heats a wafer in a vacuum chamber using heat conduction of an inert gas. Concerning a heating device that can be monitored.
従来の真空槽内における不活性ガスの熱伝導を利用した
ウェハー加熱装置は、ウェハーと金属ブロックとの間に
空間を設け、金属、ブロックを一定温度に加熱した状態
で金属ブロックとウェハーの間の空間に不活性ガスを導
入する方式であった。Conventional wafer heating equipment that utilizes heat conduction of inert gas in a vacuum chamber creates a space between the wafer and the metal block, heats the metal and block to a constant temperature, and then heats the space between the metal block and the wafer. The method was to introduce inert gas into the space.
その構造を第７図の平面図及びそのＡ−Ａ断面図を第８
図に示す０図を参照して動作を説明する。熱伝導率の高
い加熱銅ブロック１３を、熱電対５で温度をモニターし
ながらセラミックヒータ−１７で加熱し一定の温度に保
つ、そしてガス導入口１８よりＡｒガスを一定流■導入
する。Ａｒガスの原子は、ウェハー１と加熱銅ブロック
１３の間で衝突を繰り返し、最後にウェハー１と加熱銅
ブロック１３の接触面から出てゆく、加熱された銅ブロ
ック１３と、ウェハー１との間のＡｒガスの原子の衝突
で熱が伝導され、ウェハー１は加熱される。このとき加
熱銅ブロック１３は、ウェバー１へ熱が伝導されたとき
の温度変動を小さく抑えるために大きな熱容量を持つよ
う製作される。ウェハー温度のモニターはウェハー裏面
にウェハー用熱電対１９を接触することで実現している
。Its structure is shown in the plan view in Fig. 7 and its A-A sectional view in Fig. 8.
The operation will be explained with reference to Figure 0 shown in the figure. A heating copper block 13 with high thermal conductivity is heated with a ceramic heater 17 and kept at a constant temperature while monitoring the temperature with a thermocouple 5, and a constant flow of Ar gas is introduced from a gas inlet 18. Ar gas atoms repeatedly collide between the wafer 1 and the heated copper block 13, and finally exit from the contact surface between the wafer 1 and the heated copper block 13. Heat is conducted by the collision of Ar gas atoms, and the wafer 1 is heated. At this time, the heating copper block 13 is manufactured to have a large heat capacity in order to suppress temperature fluctuations when heat is conducted to the webber 1. Monitoring of the wafer temperature is realized by contacting a wafer thermocouple 19 to the back surface of the wafer.
上述した従来のウェハー加熱装置では、ウェハー温度は
裏面に接触させた熱電対で測定する構造となっているが
、熱電対とウェハー裏面との接触面積が小さく伝導する
熱量が小さいため、熱電対の温度の上昇は遅く応答速度
が低い、すなわちウェハー温度と熱電対指示温度との間
に差が発生しやすい欠点がある。さらにウェハーの枚葉
処理の場合、熱電対とウェハーとの接触の仕方の微妙な
変化が発生し、再現性よく温度が測定できないという欠
点がある。In the conventional wafer heating device described above, the wafer temperature is measured with a thermocouple that is in contact with the back surface of the wafer. The disadvantage is that the temperature rise is slow and the response speed is low, that is, a difference easily occurs between the wafer temperature and the temperature indicated by the thermocouple. Furthermore, in the case of single wafer processing, there is a drawback that subtle changes occur in the way the thermocouple contacts the wafer, making it impossible to measure temperature with good reproducibility.
本発明は、不活性ガスによる熱伝導を利用するウェハー
加熱装置において、加熱されるウェハー裏面に対向して
設けられ熱容量がウェハーと同等又はそれ以下の板状材
料と、ウェハー裏面と前記板状材料で形成される空間の
周囲に設けられた熱伝導率の低い材料からなる側壁と、
前記空間へ不活性ガスを導入する手段と、前記板状材料
を加熱する手段と、その温度を測定する手段とを設けた
ウェハー加熱装置である。The present invention provides a wafer heating device that utilizes heat conduction by an inert gas, which includes a plate-shaped material that is provided opposite to the back surface of the wafer to be heated and has a heat capacity equal to or less than that of the wafer, and a plate-shaped material that is arranged opposite to the back surface of the wafer to be heated and has a heat capacity that is equal to or less than that of the wafer; A side wall made of a material with low thermal conductivity provided around the space formed by the
The wafer heating apparatus is provided with means for introducing an inert gas into the space, means for heating the plate-shaped material, and means for measuring the temperature.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の第１の実施例の平面図、第２図はその
Ａ−Ａ断面図である。これはスパッタリング装置におけ
るウェハー加熱装置の例である。FIG. 1 is a plan view of a first embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along the line AA. This is an example of a wafer heating device in a sputtering device.
ウェハー裏面に対向する板状材料としては厚さｌ ｎ＋
の銅板を選んだ、この銅板２を石英の側壁３を介してウ
ェハー１の裏面に対向するように１關の距離で取り付け
ている。そしてその温度は熱電対５で測定される。熱電
対５はヒートランプ７からの外乱で測定誤差が生じない
ようアルミナ製の熱電対保護管６で覆っている。また銅
板２の加熱はヒートランプ７で行われる。The thickness of the plate material facing the back side of the wafer is l n+
A copper plate 2 was selected, and this copper plate 2 is attached to the back surface of the wafer 1 with a quartz side wall 3 in between so as to face it at a distance of one angle. The temperature is then measured with a thermocouple 5. The thermocouple 5 is covered with an alumina thermocouple protection tube 6 to prevent measurement errors from occurring due to disturbances from the heat lamp 7. Further, the copper plate 2 is heated by a heat lamp 7.
ウェハー１．銅板２１石英側壁３で囲まれる空間にはガ
ス配管４にてＡｒガスが一定流量導入される。この“空
間でＡｒガスはウェハー１と銅板２の間で衝突を繰り返
し、銅板２からウェハー１゜へ熱を伝える。銅板２の熱
容量が小さいため、銅板２の温度はウェハー１の温度に
より容易に変化する。Wafer 1. A constant flow rate of Ar gas is introduced into the space surrounded by the copper plate 21 and the quartz side wall 3 through the gas pipe 4. In this space, Ar gas repeatedly collides between the wafer 1 and the copper plate 2, and transfers heat from the copper plate 2 to the wafer 1°.Since the heat capacity of the copper plate 2 is small, the temperature of the copper plate 2 is easily controlled by the temperature of the wafer 1. Change.
また、ヒートランプ７のある空間に蓄積される熱量が銅
板２の温度の応答を悪くしないように、その空間は水冷
されたアルミニウム製水冷ジャケット９で囲まれている
０図中の１０はその冷却配管であり１１．１２はその冷
却水入口及び出口である。In addition, in order to prevent the amount of heat accumulated in the space where the heat lamp 7 is located from worsening the temperature response of the copper plate 2, that space is surrounded by a water-cooled aluminum water-cooling jacket 9. It is a pipe, and 11.12 is its cooling water inlet and outlet.
ウェハー１と銅板２の間のＡｒガス圧力を１゜５關Ｔｏ
ｒｒにした場合のウェハーと銅板の温度及びヒーターへ
投入される電力の関係を調査した結果が第３図である０
枚葉処理を想定しており、横軸０ｓｅｃで１枚目のウェ
ハーを加熱装置にセットし６０ｓｅｃで取り去り、８０
ｓｅｃで２枚目のウェハーをセットし１６０ｓｅｃで取
り去りている。ウェハーの温度は表面に熱電対を貼り付
けて測定した。このときの１枚目、２枚目ウェハーの温
度変化は各々ａｌ、ａ２となった。銅板２の温度をモニ
ターしながらヒートランプ７へ投入する電力は１００〜
２５０ｗの間で制御している。第３図中すが銅板の温度
で９が投入電力である。Ar gas pressure between wafer 1 and copper plate 2 is set to 1°5° To
Figure 3 shows the results of investigating the relationship between the temperature of the wafer and the copper plate and the power input to the heater when the temperature is set to 0.
Assuming single wafer processing, the first wafer is set on the heating device at 0 sec on the horizontal axis, removed at 60 sec, and 80 sec.
The second wafer is set in seconds and removed in 160 seconds. The temperature of the wafer was measured by attaching a thermocouple to the surface. At this time, the temperature changes of the first and second wafers were al and a2, respectively. The power input to the heat lamp 7 while monitoring the temperature of the copper plate 2 is 100~
It is controlled between 250w. In Figure 3, 9 is the temperature of the copper plate and 9 is the input power.
図のように投入電力Ｃは銅板温度すが３００’Ｃを超え
ると１００ｗ、３００℃より低下すると２５０ｗとなる
ように制御している０図かられがるように、ウェハーが
加熱装置にセットされてから４０ｓｅｃ後には、銅板と
ウェハーとの温度差は１０℃以内になる。すなわち銅板
の温度でウェハーの温度を知ることができる。As shown in the figure, the input power C is controlled to 100 W when the copper plate temperature exceeds 300'C, and 250 W when it drops below 300'C.The wafer is set in the heating device as shown in the figure. After 40 seconds, the temperature difference between the copper plate and the wafer will be within 10°C. In other words, the temperature of the wafer can be determined from the temperature of the copper plate.
量産用の半導体製造装置でウェハー表面に熱電対を貼り
付けできない場合も、本発明によればウェハー温度を知
ることができる。ウェハー温度と銅板温度との関係は、
導入されるＡｒガス圧力が１．２ｍＴｏｒｒ以上で一定
であり、再現性の点でも問題ない。Even if a thermocouple cannot be attached to the wafer surface in mass-production semiconductor manufacturing equipment, the wafer temperature can be determined according to the present invention. The relationship between wafer temperature and copper plate temperature is
The introduced Ar gas pressure is constant at 1.2 mTorr or more, and there is no problem in terms of reproducibility.
第４図は本発明の第２の実施例の平面図、第５図はその
Ａ−Ａ断面図である。ウェハー■の裏面に対向する板状
材料としてはウェハーと同一材料で同一厚さの８１板２
０を選び、ウェハー１と１ｍｌの距離で石英側壁３に取
り付けた。その温度は熱電対５で測定される。FIG. 4 is a plan view of a second embodiment of the present invention, and FIG. 5 is a cross-sectional view taken along line AA. The plate material facing the back side of the wafer ■ is an 81 plate 2 made of the same material and the same thickness as the wafer.
0 was selected and attached to the quartz side wall 3 at a distance of 1 ml from the wafer 1. Its temperature is measured with a thermocouple 5.
ウェハー１．Ｓｉ板２０．石英側壁３で囲まれる空間に
はＡｒガスが導入されるが、その導入は加熱ガス導入口
１４と冷却ガス導入口１６のように２系統あり、第４図
のように配置される。冷却ガス導入口１６から導入され
るＡｒガスは、水冷された冷却銅ブロツク１５中を流れ
る冷却されたガスであり、加熱ガス導入口１４から導入
されるＡｒガスはセラミックヒータ−１７で加熱された
加熱銅ブロツク１３中を流れる加熱されたガスである。Wafer 1. Si plate 20. Ar gas is introduced into the space surrounded by the quartz side wall 3, and there are two systems for introducing it, such as a heating gas inlet 14 and a cooling gas inlet 16, which are arranged as shown in FIG. The Ar gas introduced from the cooling gas inlet 16 is a cooled gas flowing through the water-cooled cooling copper block 15, and the Ar gas introduced from the heating gas inlet 14 is heated by the ceramic heater 17. This is the heated gas flowing through the heated copper block 13.
ガスを切り換えることにより、ウェハーの冷却、加熱の
両方が行える。By switching the gas, both cooling and heating of the wafer can be performed.
また加熱前に、冷却されたガスをしばらく流すことによ
りＳｉ板２０に残される前ウェハー加熱時の熱を取り去
ることができ、そして板状材料としてウェハーと熱特性
の同じＳｉ板を用いることにより、熱電対５で測定され
るＳｉ板の温度はウェハーの温度とほぼ同じとなり再現
性がよく、制御性の高い加熱が実現できる。Furthermore, by flowing a cooled gas for a while before heating, it is possible to remove the heat left on the Si plate 20 during the previous wafer heating, and by using a Si plate having the same thermal characteristics as the wafer as the plate material, The temperature of the Si plate measured by the thermocouple 5 is almost the same as the temperature of the wafer, so reproducibility is good, and highly controllable heating can be realized.
第６図はこの使用方法のときのウェハー温度とＳ１板の
温度を調査した結果であ、る、ａｌは１枚目のウェハー
の温度、ａ２は２枚目のウェハーの温度、ｂはＳ１板の
温度をそれぞれ示す、また冷却されたＡｒガスの流量を
ｃｌ、加熱されたＡｒガスの流量を０２として同時に示
している。このとき加熱銅ブロック１３は２５０℃に、
冷却銅ブロック１５は１５℃にそれぞれ保っている。Figure 6 shows the results of investigating the wafer temperature and the temperature of the S1 plate in this usage method, where al is the temperature of the first wafer, a2 is the temperature of the second wafer, and b is the temperature of the S1 plate. In addition, the flow rate of the cooled Ar gas is shown as cl, and the flow rate of the heated Ar gas is shown as 02. At this time, the heating copper block 13 is heated to 250°C.
The cooling copper blocks 15 are each kept at 15°C.
動作は、ウェハーが加熱装置にセットされてから１２ｓ
ｅｃの間冷用されたＡｒガスが２０ｓｅｃｍの流量で４
８ＳｅＣの間流されるようになる０図かられかるように
Ｓｉ板の温度でウェハーの温度が非常によくモニターさ
れる。The operation takes 12 seconds after the wafer is set on the heating device.
The cooled Ar gas during EC was
The temperature of the wafer is very closely monitored by the temperature of the Si plate, as shown in Figure 0, which flows during 8SeC.
このように本実施例ではウェハーに対向する板状材料と
してＳ１板を用い、冷却されたＡｒガスと加熱されたＡ
ｒガスの両方を流せるため再現性がよく、制御性の高い
加熱ができる利点がある。In this example, the S1 plate is used as the plate material facing the wafer, and the cooled Ar gas and the heated Ar gas
Since both r gases can be flowed, there is an advantage that reproducibility is good and heating can be performed with high controllability.
以上説明したように本発明は、ウェハーの裏面に対向し
て、熱容量がウェハーと同等又はそれ以下の板状材料を
設け、ウェハーとその板状材料の間に不活性ガスを充満
させガスによる熱伝導でウェハーと板状材料との温度差
を小さくすることにより、ウェハーの温度を板状材料の
温度で間接的にモニターしながら加熱ができる効果があ
り、ウェハーの温度の高精度な制御が要求される今後の
プロセスに有効である。As explained above, the present invention provides a plate material having a heat capacity equal to or less than that of the wafer, facing the back surface of the wafer, and filling the space between the wafer and the plate material with an inert gas to generate heat generated by the gas. By reducing the temperature difference between the wafer and the plate material through conduction, it is possible to heat the wafer while indirectly monitoring the temperature of the plate material, which requires highly accurate control of the wafer temperature. will be useful for future processes.
第１図は本発明の第１の実施例のウェハー加熱装置の平
面図、第２図はその断面図、第３図はこの装置のウェハ
ー加熱特性を示すグラフ、第４図は本発明の第２の実施
例のウェハー加熱装置の平面図、第５図はその断面図、
第６図は第２の実施例のウェハー加熱特性を示すグラフ
、第７図は従来のウェハー加熱装置の一例の平面図、第
８図はその断面図である。
１・・・ウェハー、２・・・銅板、３・・・石英側壁、
４・・・ガス配管、５・・・熱電対、６・・・熱電対保
護管、７・・・ヒートランプ、８・・・ヒートランプ端
子、９・・・水冷ジャケット、１０・・・冷却配管、１
１・・・冷却水入口、１２・・・冷却水出口、１３・・
・加熱銅ブロック、１４・・・加熱ガス導入口、１５・
・・冷却銅ブロック、１６・・・冷却ガス導入口、１７
・・・セラミックヒータ−１８・・・ガス導入口、１９
・・・ウェハー用熱電対、２０・・・ｓｒ板。FIG. 1 is a plan view of a wafer heating device according to a first embodiment of the present invention, FIG. 2 is a cross-sectional view thereof, FIG. 3 is a graph showing the wafer heating characteristics of this device, and FIG. A plan view of the wafer heating device of the second embodiment, FIG. 5 is a cross-sectional view thereof,
FIG. 6 is a graph showing the wafer heating characteristics of the second embodiment, FIG. 7 is a plan view of an example of a conventional wafer heating device, and FIG. 8 is a sectional view thereof. 1... Wafer, 2... Copper plate, 3... Quartz side wall,
4... Gas piping, 5... Thermocouple, 6... Thermocouple protection tube, 7... Heat lamp, 8... Heat lamp terminal, 9... Water cooling jacket, 10... Cooling Piping, 1
1...Cooling water inlet, 12...Cooling water outlet, 13...
・Heating copper block, 14...Heating gas inlet, 15・
...Cooling copper block, 16...Cooling gas inlet, 17
...Ceramic heater-18...Gas inlet, 19
...Thermocouple for wafer, 20...SR plate.
Claims (1)
おいて、加熱されるウェハー裏面に対向して設けられ熱
容量がウェハーと同等又はそれ以下の板状材料と、ウェ
ハー裏面と前記板状材料で形成される空間の周囲に設け
られた熱伝導率の低い材料からなる側壁と、前記空間へ
不活性ガスを導入する手段と、前記板状材料を加熱する
手段と、その温度を測定する手段とを設けたことを特徴
とするウェハー加熱装置。A wafer heating device that utilizes heat conduction by an inert gas is formed by a plate-shaped material that is provided opposite the back surface of the wafer to be heated and has a heat capacity equal to or less than that of the wafer, and the back surface of the wafer and the plate-shaped material. A side wall made of a material with low thermal conductivity is provided around the space, a means for introducing an inert gas into the space, a means for heating the plate-shaped material, and a means for measuring the temperature. A wafer heating device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1218973A JP2522402B2 (en) | 1989-08-24 | 1989-08-24 | Wafer heating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1218973A JP2522402B2 (en) | 1989-08-24 | 1989-08-24 | Wafer heating device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0382035A true JPH0382035A (en) | 1991-04-08 |
| JP2522402B2 JP2522402B2 (en) | 1996-08-07 |
Family
ID=16728264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1218973A Expired - Lifetime JP2522402B2 (en) | 1989-08-24 | 1989-08-24 | Wafer heating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2522402B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5881208A (en) * | 1995-12-20 | 1999-03-09 | Sematech, Inc. | Heater and temperature sensor array for rapid thermal processing thermal core |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62128129A (en) * | 1985-11-28 | 1987-06-10 | Nec Corp | Wafer heating apparatus |
| JPS6365083A (en) * | 1986-09-04 | 1988-03-23 | Fujitsu Ltd | Vapor growing apparatus |
-
1989
- 1989-08-24 JP JP1218973A patent/JP2522402B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62128129A (en) * | 1985-11-28 | 1987-06-10 | Nec Corp | Wafer heating apparatus |
| JPS6365083A (en) * | 1986-09-04 | 1988-03-23 | Fujitsu Ltd | Vapor growing apparatus |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5881208A (en) * | 1995-12-20 | 1999-03-09 | Sematech, Inc. | Heater and temperature sensor array for rapid thermal processing thermal core |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2522402B2 (en) | 1996-08-07 |
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