KR0175002B1 - Organometallic Chemical Vapor Deposition Equipment - Google Patents
Organometallic Chemical Vapor Deposition Equipment Download PDFInfo
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- KR0175002B1 KR0175002B1 KR1019950002249A KR19950002249A KR0175002B1 KR 0175002 B1 KR0175002 B1 KR 0175002B1 KR 1019950002249 A KR1019950002249 A KR 1019950002249A KR 19950002249 A KR19950002249 A KR 19950002249A KR 0175002 B1 KR0175002 B1 KR 0175002B1
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- reaction liquid
- chemical vapor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
유기 금속 화학 기상 증착장치에 관하여 개시한다. 본 발명은 반응관과, 상기 반응관의 상부에 반응액체를 유입할 수 있는 유입구와, 상기 반응액체의 유입구와 연결되고 다수의 구멍을 통해 상기 반응액체를 가열 배출할 수 있는 샤워 헤드와, 상기 샤워 헤드에 기체를 주입하여 상기 샤워 헤드의 온도를 제어할 수 있는 온도 제어기와, 상기 샤워 헤드의 대향하여 상기 반응액체가 반응할 수 있는 기판이 탑재될 수 있는 히터블럭을 구비한다. 본 발명에 의하면, 샤워 헤드의 온도를 질소기체를 이용하여 정확히 조절함으로써, 반도체 기판상에 증착되는 금속막을 균일하고 재현성 있고 비저항이 낮게 형성할 수 있다.An organometallic chemical vapor deposition apparatus is disclosed. The present invention provides a reaction tube, an inlet for introducing a reaction liquid into the upper portion of the reaction tube, a shower head connected to the inlet of the reaction liquid and capable of heating and discharging the reaction liquid through a plurality of holes; And a temperature controller capable of injecting gas into the shower head to control the temperature of the shower head, and a heater block on which a substrate capable of reacting the reaction liquid can be mounted to face the shower head. According to the present invention, by precisely controlling the temperature of the shower head using nitrogen gas, the metal film deposited on the semiconductor substrate can be formed uniformly, reproducibly, and with low specific resistance.
Description
제1도는 종래의 MOCVD법의 증착원리를 설명하기 위하여 도시한 도면이다.1 is a view for explaining the deposition principle of the conventional MOCVD method.
제2도는 종래의 샤워 헤드의 온도조절을 설명하기 위하여 도시한 도면이다.2 is a view for explaining the temperature control of the conventional shower head.
제3도는 MOCVD법을 이용한 본 발명의 유기 금속 화학 기상 증착장치를 설명하기 위한 개략도이다.3 is a schematic view for explaining the organometallic chemical vapor deposition apparatus of the present invention using the MOCVD method.
본 발명은 반도체 제조 장치에 관한 것이다. 보다 구체적으로는, 본 발명은 유기 금속 화학 기상 증착(Metal Organic Chemical Vapor Deposition, 이하 MOCVD라 한다) 장치에 사용되는 샤워 헤드에 관한 것이다.The present invention relates to a semiconductor manufacturing apparatus. More specifically, the present invention relates to a shower head used in an organic metal chemical vapor deposition (MOCVD) apparatus.
일반적으로 구리막은 종래의 알루미늄막에 비해 많은 전류를 흘릴 수 있어 신뢰성을 높일 수 있고 낮은 저항을 갖고 있어서 차세대 배선재료로 각광받고 있다. 상기 구리막을 증착하는 여러가지 방법중에서, MOCVD법은 가장 유력한 증착방법중의 하나이다.In general, a copper film is able to flow more current than a conventional aluminum film, thereby improving reliability and having a low resistance, and thus, a copper film has been spotlighted as a next-generation wiring material. Among the various methods of depositing the copper film, the MOCVD method is one of the most powerful deposition methods.
상기 MOCVD법의 증착원리를 제1도를 사용하여 간단히 설명한다.The deposition principle of the MOCVD method will be briefly described using FIG.
제1도는 종래의 MOCVD법의 증착원리를 설명하기 위하여 도시한 도면이다.1 is a view for explaining the deposition principle of the conventional MOCVD method.
구체적으로, 액체 또는 고체의 전구체인 금속 유기 화합물등의 소오스 물질(1)이 담긴 소오스관(source chamber)을 가열하여 기체로 만들어 압력차이나 수송 기체를 이용하여 가스라인(3)을 통해 반응관(5:process chamber)까지 이동시킨다. 이동된 기체 또는 액체의 전구체는 반응관(5)속의 샤워 헤드(7)를 통해 샤워기에서 물이 나오듯이 뿌려지고, 히터블럭(9)상에 탑재된 뜨거운 반도체 기판(웨이퍼:도시안됨)위에서 금속부분과 기체로 분리된 후, 금속부분은 웨이퍼에 증착되고 남은 기체는 펌프에 의해 배기된다. 이 방법은 금속 화합물과 기판사이의 화학반응에 의해 증착되므로 단차피복성이 매우 뛰어나 배선증착에 적합하다.Specifically, a source tube containing a source material (1) such as a metal organic compound, which is a precursor of a liquid or a solid, is heated to a gas to make a gas, and then a reaction tube (for example, through a gas line 3 using a pressure difference or a transport gas). 5: move to the process chamber. The precursor of the transported gas or liquid is sprayed as if water comes out of the shower through the shower head 7 in the reaction tube 5 and the metal on the hot semiconductor substrate (wafer: not shown) mounted on the heater block 9. After separating the part and the gas, the metal part is deposited on the wafer and the remaining gas is evacuated by the pump. This method is deposited by a chemical reaction between a metal compound and a substrate, and thus has excellent step coverage and is suitable for wiring deposition.
증착원리에서도 알 수 있듯이 MOCVD법은 전구체의 온도제어가 중요하다. 반도체 기판이 놓여지는 히터블럭(9), 샤워 헤드(7), 전구체를 담은 소오스관(2), 소스관(7)에서 반응관(5) 사이의 가스라인(3) 등 장비전체를 적정온도로 제어해야 한다. 특히 기판과 샤워 헤드(7)는 공정의 재현성과 관계가 있으므로 온도가 균일하고 안정되어야 한다. 상술한 온도 제어가 필요한 각부분은 온도를 읽는 센서와 열선을 이용하여 가열하는 데 반해, 샤워 헤드(7)는 약 2∼5cm 아래에 위치한 200∼400℃의 웨이퍼 가열용 히터블럭(9)이 있기 때문에 지속적으로 식혀주어야 하는데, 이를 제2도를 사용하여 개략적으로 설명한다.As can be seen from the deposition principle, the temperature control of the precursor is important in the MOCVD method. Heat the entire equipment such as the heater block 9, the shower head 7, the source tube 2 containing the precursor, and the gas line 3 between the source tube 7 and the reaction tube 5 on which the semiconductor substrate is placed. To be controlled. In particular, since the substrate and the shower head 7 are related to the reproducibility of the process, the temperature must be uniform and stable. Whereas each part requiring temperature control is heated using a sensor and a heating wire that reads the temperature, the shower head 7 has a wafer block 9 for heating the wafer at 200 to 400 ° C. located below about 2 to 5 cm. As it is, it should be cooled down continuously. This is schematically explained using FIG.
제2도는 종래의 샤워 헤드의 온도조절을 설명하기 위하여 도시한 도면이다.2 is a view for explaining the temperature control of the conventional shower head.
구체적으로, 종래의 샤워 헤드의 온도조절은 칠러(chiller:11)를 이용하여 조절한다. 상세하게는 칠러(11)에 우리가 원하는 장비의 온도, 예컨대 샤워 헤드(11)의 온도를 설정하면 온도센서(thermo-couple:15)로 물2(12)의 온도를 측정하여 장비온도를 알고 이 온도가 원하는 온도와 차이가 나면 물2(12) 속에서 물을 데우거나 식혀서 관1(19)을 통해 물2(12)를 물1(14)로 보냅니다. 시간이 지나면 온도에 변화가 생기므로 물1(14)과 물2(12)를 계속 순환시켜 가며 온도센서(15)로 물의 온도를 확인하여 물2(12)를 식히거나 데웁니다. 상기 물 대신에 오일을 사용할 수도 있다.Specifically, the temperature control of the conventional shower head is controlled using a chiller (chiller 11). In detail, the chiller 11 sets the temperature of the desired equipment, for example, the temperature of the shower head 11, and the temperature of the water 2 12 is measured by using a thermo-couple 15 to know the equipment temperature. If this temperature differs from the desired temperature, warm or cool the water in water 2 (12) and send water 2 (12) to water 1 (14) through tube 1 (19). As time elapses, the temperature changes, so the water 1 (14) and water 2 (12) are continuously circulated, and the temperature sensor (15) checks the water temperature to cool or warm the water 2 (12). Oil may be used instead of the water.
그러나 종래의 칠러를 이용한 온도조절은 샤워 헤드의 온도가 계속해서 변하고 있기 때문에, 비열이 큰 물이나 오일을 이용하면 정확도가 떨어져 기판상에 증착되는 금속막의 신뢰성에 문제가 있다.However, in the conventional temperature control using the chiller, since the temperature of the shower head is constantly changing, the use of water or oil with a large specific heat reduces accuracy, which causes a problem of reliability of the metal film deposited on the substrate.
따라서, 본 발명의 목적은 상기 문제점을 해결하여 샤워 헤드의 온도조절을 정확히 할 수 있는 유기 금속 화학 기상 증착장치를 제공하는 데 있다.Accordingly, an object of the present invention is to provide an organometallic chemical vapor deposition apparatus that can accurately control the temperature of the shower head by solving the above problems.
상기 목적을 달성하기 위하여 본 발명의 유기 금속 화학 기상 증착장치는 반응관과, 상기 반응관의 상부에 반응액체를 유입할 수 있는 유입구와, 상기 반응액체의 유입구와 연결되고 다수의 구멍을 통해 상기 반응액체를 가열 배출할 수 있는 샤워 헤드와, 상기 샤워 헤드에 기체를 주입하여 상기 샤워 헤드의 온도를 제어할 수 있는 온도 제어기와, 상기 샤워 헤드의 대향하여 상기 반응액체가 반응할 수 있는 기판이 탑재될 수 있는 히터블럭을 구비한다. 상기 기체는 질소기체를 사용할 수 있다.In order to achieve the above object, the organometallic chemical vapor deposition apparatus of the present invention includes a reaction tube, an inlet through which a reaction liquid can be introduced into an upper portion of the reaction tube, and a plurality of holes connected to the inlet of the reaction liquid. A shower head capable of heating and discharging the reaction liquid, a temperature controller capable of controlling the temperature of the shower head by injecting gas into the shower head, and a substrate capable of reacting the reaction liquid against the shower head. It has a heater block that can be mounted. The gas may be a nitrogen gas.
본 발명에 의하면, 샤워 헤드의 온도를 질소기체를 이용하여 정확히 조절함으로써, 반도체 기판상에 증착되는 금속막을 균일하고 재현성 있고 비저항이 낮게 형성할 수 있다.According to the present invention, by precisely controlling the temperature of the shower head using nitrogen gas, the metal film deposited on the semiconductor substrate can be formed uniformly, reproducibly, and with low specific resistance.
이하, 본 발명을 도면을 참조하여 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the drawings.
제3도는 MOCVD법을 이용한 본 발명의 유기 금속 화학 증착장치를 설명하기 위한 개략도이다.3 is a schematic view for explaining the organometallic chemical vapor deposition apparatus of the present invention using the MOCVD method.
구체적으로, 본 발명은 질소기체를 이용하여 샤워 헤드를 냉각한다. 질소기체를 이용한 냉각 방법은 1/4인치 관(21)을 이용하여 분당 10ml의 질소기체를 흘려 온도를 제어하는 방법으로, 샤워 헤드(23)에 직접 센서(25)를 달아 온도제어기(35)의 입력단자(35b)를 통해 전기적 신호를 받아 원하는 온도 이상일때만 온도제어기(35)의 출력단자(35a)를 통해 전기신호를 줌으로써 솔레노이드 밸브(27)를 열어 유량계(33)를 통해 질소기체로 냉각하는 방법이다. 이 방법은 냉매로 기체를 사용했지만 유출량이 매우 많아서 식는 속도도 빠르고 균일한 온도를 유지하는 데 적합하다. 상기 샤워 헤드(23)의 하부는 반응가스를 유출할 수 있는 구멍이 마련되어 있고 반도체 기판(도시안됨)이 놓이는 히터블럭(31)과 소정거리 떨어져 있다. 참조번호 29는 반응관을 나타낸다. 종래의 칠러를 이용한 냉각방법은 샤워 헤드속의 물의 온도가 샤워 헤드의 온도를 알려주는 간접적인 지표인데 반하여 질소기체를 이용한 냉각법은 샤워 헤드에 직접 센서를 부착하므로 정확하게 제어할 수 있다.Specifically, the present invention cools the shower head using nitrogen gas. The cooling method using nitrogen gas is a method of controlling temperature by flowing 10 ml of nitrogen gas per minute using a 1/4 inch tube 21, and attaching a sensor 25 directly to the shower head 23 to control the temperature controller 35. When the electrical signal is received through the input terminal 35b of the controller, the solenoid valve 27 is opened by cooling the nitrogen gas through the flowmeter 33 by giving an electrical signal through the output terminal 35a of the temperature controller 35 only when the temperature is higher than the desired temperature. That's how. This method uses gas as the refrigerant, but the flow rate is very high, so the cooling rate is fast and suitable for maintaining a uniform temperature. The lower part of the shower head 23 is provided with a hole through which the reaction gas can flow out, and is spaced apart from the heater block 31 on which the semiconductor substrate (not shown) is placed. Reference numeral 29 represents a reaction tube. The conventional cooling method using the chiller is an indirect indicator that the temperature of the water in the shower head indicates the temperature of the shower head, while the cooling method using the nitrogen gas can be controlled precisely because the sensor is directly attached to the shower head.
다음은 샤워 헤드에 직접 센서를 접착하여 칠러를 이용한 냉각방법과 질소기체를 이용한 냉각방법을 비교한 표이다.The following is a table comparing the cooling method using a chiller and the cooling method using a nitrogen gas by directly attaching a sensor to a shower head.
상기 표는 원하는 온도를 정하고 실제로 각 냉각법이 얼마만한 오차를 가지고 샤워 헤드의 온도를 조절하는지를 알아본 것으로써, 샤워 헤드 온도는 원하는 온도를 나타낸다. 예를 들어, 30∼40℃에서 온도를 제어하기를 원할때 ±1℃ 정도의 오차가 있음을 말한다. 상기 표에서 *는 제어가 불가능을 나타낸다. 상기 표에서 보듯이, 칠러를 이용한 샤워 헤드의 냉각방법이 질소기체를 이용한 냉각방법보다 정확함을 알 수 있다. 질소냉각법이 칠러를 이용한 냉각방법보다 정확한 이유는 샤워 헤드의 온도가 계속해서 변하고 있기 때문이다. 다시 말하면, 비열이 큰 물이나 오일을 이용하는 칠러를 이용한 냉각방법은 온도 변화에 적절히 대응하지 못하여 오차가 커지는 것으로 생각된다.The table sets the desired temperature and finds out how much of each cooling method actually adjusts the temperature of the shower head, so that the shower head temperature represents the desired temperature. For example, when you want to control the temperature from 30 to 40 ℃ say that there is an error of ± 1 ℃. * In the table indicates that control is impossible. As shown in the above table, it can be seen that the cooling method of the shower head using the chiller is more accurate than the cooling method using the nitrogen gas. Nitrogen cooling is more accurate than chiller cooling because the temperature of the shower head is constantly changing. In other words, the cooling method using the chiller using water or oil with a large specific heat does not respond appropriately to temperature change, and it is thought that the error becomes large.
본 발명에 의하면, 샤워 헤드의 온도를 질소기체를 이용하여 정확히 조절함으로써, 반도체 기판상에 증착되는 금속막을 균일하고 재현성있고 비저항이 낮게 형성할 수 있다.According to the present invention, by precisely controlling the temperature of the shower head using nitrogen gas, the metal film deposited on the semiconductor substrate can be formed uniformly, reproducibly, and with low specific resistance.
이상, 본 발명을 실시예를 들어 설명하였지만, 본 발명은 이에 한정되는 것이 아니고, 당업자의 통상의 지식의 범위내에서 그 변형이나 개량이 가능함은 물론이다.As mentioned above, although this invention was demonstrated to an Example, this invention is not limited to this, A deformation | transformation and improvement are a matter of course within the range of common knowledge of a person skilled in the art.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950002249A KR0175002B1 (en) | 1995-02-08 | 1995-02-08 | Organometallic Chemical Vapor Deposition Equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950002249A KR0175002B1 (en) | 1995-02-08 | 1995-02-08 | Organometallic Chemical Vapor Deposition Equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960032592A KR960032592A (en) | 1996-09-17 |
| KR0175002B1 true KR0175002B1 (en) | 1999-04-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950002249A KR0175002B1 (en) | 1995-02-08 | 1995-02-08 | Organometallic Chemical Vapor Deposition Equipment |
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| Country | Link |
|---|---|
| KR (1) | KR0175002B1 (en) |
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1995
- 1995-02-08 KR KR1019950002249A patent/KR0175002B1/en not_active IP Right Cessation
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| Publication number | Publication date |
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| KR960032592A (en) | 1996-09-17 |
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