JPH0381295B2 - - Google Patents
Info
- Publication number
- JPH0381295B2 JPH0381295B2 JP4821882A JP4821882A JPH0381295B2 JP H0381295 B2 JPH0381295 B2 JP H0381295B2 JP 4821882 A JP4821882 A JP 4821882A JP 4821882 A JP4821882 A JP 4821882A JP H0381295 B2 JPH0381295 B2 JP H0381295B2
- Authority
- JP
- Japan
- Prior art keywords
- processing container
- heat
- top plate
- base
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010438 heat treatment Methods 0.000 claims description 17
- 239000010453 quartz Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 239000012809 cooling fluid Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 8
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4821882A JPS58164222A (ja) | 1982-03-25 | 1982-03-25 | 加熱処理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4821882A JPS58164222A (ja) | 1982-03-25 | 1982-03-25 | 加熱処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58164222A JPS58164222A (ja) | 1983-09-29 |
JPH0381295B2 true JPH0381295B2 (bg) | 1991-12-27 |
Family
ID=12797268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4821882A Granted JPS58164222A (ja) | 1982-03-25 | 1982-03-25 | 加熱処理装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58164222A (bg) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0237744A (ja) * | 1988-07-27 | 1990-02-07 | Tokyo Electron Ltd | 搬送装置 |
US5324684A (en) * | 1992-02-25 | 1994-06-28 | Ag Processing Technologies, Inc. | Gas phase doping of semiconductor material in a cold-wall radiantly heated reactor under reduced pressure |
KR100241290B1 (ko) * | 1992-07-09 | 2000-03-02 | 야마시타 히데나리 | 반도체 처리장치 |
DE4242154C2 (de) * | 1992-12-14 | 1995-04-20 | United Carr Gmbh Trw | Verschlußdeckel |
CN112041627B (zh) * | 2018-11-14 | 2022-07-05 | 株式会社爱发科 | 真空加热装置、反射器装置 |
-
1982
- 1982-03-25 JP JP4821882A patent/JPS58164222A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58164222A (ja) | 1983-09-29 |
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