JPH0379762A - Thin film forming device - Google Patents

Abstract

PURPOSE:To exactly measure the temp. of the surface of a thin film to be formed by providing a soaking body moving so as to cross a line connecting the peep window provided in a vessel and the thin film forming position in the vessel and mounting a thermometer to this soaking body. CONSTITUTION:The vacuum vessel 24 is provided with a cell 22 for supplying raw materials, the peep window 23 and a sample base 25 made of molybdenum. A heater is provided in the sample base 25 to heat a substrate 26. The temp. is measured by a thermocouple 27. A movable shutter plate 28 is provided between this peep window 23 and the sample base 25 to prevent the sticking of the raw materials to the peep window 23. The shutter plate 28 is constituted of ceramics 11 contg. a heater and graphite 12 which is the soaking body. A thermocouple 13 is brought into contact with the graphite 12. The heat radiation transmittance of the peep window 23 is known in this way and the surface temp. of the thin film produced on the substrate 26 is exactly measured by the radiation thermometer 21.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an improvement in an apparatus for producing a thin film in a container isolated from the outside.

(Prior Art) A method of producing a semiconductor thin film or an insulating thin film on a substrate using gas or vapor from a solid as a raw material in a container isolated from the outside is generally widely used.

In these methods, the heat of the substrate is often used as an energy source to control two reactions in the process of reacting raw materials to form a thin film on the substrate surface. That is, the temperature of the substrate is a major factor in controlling the growth reaction. Therefore, accurate measurement of the substrate temperature is important for stabilizing the properties of the resulting thin film.

Normally, in thin film production equipment, temperature is measured with a thermocouple installed on the back side of a holder that heats and holds the substrate, so that substrates can be easily replaced. However, this method has the disadvantage that the temperature of the substrate surface cannot be directly measured, and that the temperature tracking of the holder relative to the substrate is poor when the substrate is replaced.

Therefore, conventionally, a viewing window is installed at a position where the surface of the substrate of the container can be seen, and the surface temperature is also measured using a radiation thermometer.

However, when the temperature of the substrate surface is measured by a radiation thermometer through a viewing window, the glass may become cloudy due to the deposition of reaction products on the viewing window (generally made of quartz or Pyrex glass). ) The reduction in the transmittance of thermal radiation has a negative effect on measurement accuracy. To prevent this negative effect, a cover is attached to the viewing window to prevent the deposition of reactants when measurement is not necessary.

(Problems to be Solved by the Invention) However, in the case of a reactant with a high vapor pressure, the reactant passes through a small gap in the cover and accumulates on the viewing window after a long period of time. With conventional technology, it is not possible to quantitatively evaluate the amount of reduction in thermal radiation transmittance due to fogging of the viewing window, so it is necessary to accurately measure temperature when deposits accumulate on the viewing window after long-term use. It is difficult.

An object of the present invention is to provide a thin film manufacturing apparatus that can accurately measure the temperature of a thin film surface.

(Function) In the present invention, a heat equalizer is provided on the shutter plate that opens and closes the peephole inside the container, and a thermocouple is provided to measure the temperature of the heat equalizer, and the temperature of the shutter plate is measured by the thermocouple. Measure. While the shutter plate is closed, the temperature of the shutter plate is observed using a radiation thermometer through the viewing window.
By comparing the temperatures measured by the thermocouple and radiation thermometer at this time, the thermal radiation transmittance of the viewing window can be determined. Next, when the viewing window is opened, the radiation thermometer and the thin film to be measured are facing each other.

A radiation thermometer measures the surface temperature of a thin film and can obtain an accurate surface temperature from the previously measured thermal radiation transmittance.

[Example] The present invention will be described in detail below with reference to the drawings.

First, with reference to FIG. 2, a molecular beam crystal growth apparatus, which is an example of a thin film production apparatus equipped with a radiation thermometer 21, will be described.

The molecular beam crystal growth apparatus shown in FIG. 2 includes a cell 22. A container 24 having a viewing window 23 and defining an internal space, and a molybdenum sample stage 25 housed within the container 24 are provided.

Here, the container 23 isolates the internal space from the outside,
The internal space can be kept at a high vacuum.

A heater (not shown) is provided on the back side of the sample stage 25, and the growth substrate 26 attached to the sample stage 25 is heated by this heater. Also.

A thermocouple 27 is provided on the back side of the sample stage 25, and the temperature of the sample stage 25 can be measured.

A movable shutter plate 28 connected to a one-turn introducer (not shown) is provided between the viewing window 23 and the sample stage 25. This shutter plate 28 can prevent raw materials from adhering to the viewing window 23.

The radiation thermometer 21 provided outside the viewing window 23 receives heat radiation with a wavelength of 2 μm radiated from the surface of the substrate 26, and
Its surface temperature can be measured.

Next, a shutter plate used in a molecular beam crystal growth apparatus according to an embodiment of the present invention will be explained with reference to FIG.

The shutter plate shown in FIG. 1 is made by bonding graphite 12, which is a heat equalizer, to one side of a ceramic 11 that contains a heater inside. A thermocouple 13 for measuring the temperature of graphite 12 is in contact with the surface of graphite 12 .

Using the shutter plate shown in FIG. 1 as the shutter plate 28 in FIG. You can know the thermal radiation transmittance.

If the thermal radiation transmittance of the window is known, the radiation thermometer 21 can accurately measure the surface temperature of the thin film formed on the substrate.

[Effects of the Invention] According to the present invention, by providing a heat equalizing body that is movable to a line connecting the peep window of the thin film production apparatus to the thin film production position, and attaching a thermometer to the heat equalizing body, the peep window The temperature of the surface of the produced thin film can be accurately measured with a radiation thermometer regardless of the state of the film.

[Brief explanation of drawings]

FIG. 1 is a structural diagram of a heat soaking body used in the thin film production apparatus of the present invention, and FIG. 2 is a molecular beam crystal growth apparatus in which the heat soaking body of FIG. 1 is used. 11...Ceramics, 12...Graphite, 1
3... Thermocouple, 21... Radiation thermometer, 22... Cell, 23... Peephole, 24... Container, 25...
Sample stage, 26... Sample, 27... Thermocouple, 28...
・Shutter board. ) ・To Tsuji...=...--1ml'J i'+! %'
kh '27 1st Li 2nd figure

Claims (4)

[Claims] 1. A thin film production apparatus having a container defining an internal space, a peephole provided in the container through which the surface of the thin film produced in the container can be seen, and a radiation thermometer that measures the surface temperature of the thin film through the peephole. A thin film production apparatus according to the present invention, further comprising a heat equalizing body that can be moved across a line connecting the observation window and the position where the thin film is produced, and a thermometer attached to the heat equalizing body. 2. 2. The thin film manufacturing apparatus according to claim 1, wherein a heating element is joined to the heat soaking element. 3. The thin film according to claim 1 or 2, characterized in that when the heat equalizer is moved onto a line connecting the peephole and the thin film, the heat equalizer covers the peephole. Fabrication equipment. 4. 4. The thin film manufacturing apparatus according to claim 1, 2, or 3, wherein the heat soaking body is a carbon sinter.