JPH037880Y2 - - Google Patents

Info

Publication number
JPH037880Y2
JPH037880Y2 JP1983125276U JP12527683U JPH037880Y2 JP H037880 Y2 JPH037880 Y2 JP H037880Y2 JP 1983125276 U JP1983125276 U JP 1983125276U JP 12527683 U JP12527683 U JP 12527683U JP H037880 Y2 JPH037880 Y2 JP H037880Y2
Authority
JP
Japan
Prior art keywords
electron beam
optical axis
samples
focusing lens
final stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1983125276U
Other languages
Japanese (ja)
Other versions
JPS6032756U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12527683U priority Critical patent/JPS6032756U/en
Publication of JPS6032756U publication Critical patent/JPS6032756U/en
Application granted granted Critical
Publication of JPH037880Y2 publication Critical patent/JPH037880Y2/ja
Granted legal-status Critical Current

Links

Description

【考案の詳細な説明】 本考案は電子線反射回折像を得る装置に関す
る。
[Detailed Description of the Invention] The present invention relates to an apparatus for obtaining an electron beam reflection diffraction image.

電子顕微鏡においては、通常の透過像の他に
種々の像を観察できるようになつており、電子線
反射回折像もこのような像の一つとして、観察さ
れている。
In an electron microscope, various images can be observed in addition to a normal transmission image, and an electron beam reflection diffraction image is also observed as one of such images.

第1図は、この電子線反射回折像を得るための
従来の装置を示すもので、図中1は電子銃、2は
集束レンズ、3は対物レンズ、4は中間レンズ、
5は投影レンズであり、6は螢光板である。この
ような構成の従来においては、集束レンズ2によ
つて形成される電子銃のクロスオーバー像Pを対
物及び中間レンズ3,4により投影レンズ5の物
面に結像せしめ、更に投影レンズ5により、この
クロスオーバー像Pの像を螢光板6上に結像させ
ると共に、その表面が光軸Cに対して僅かな角度
を有するように、試料7を投影レンズ5と螢光板
6との間に配置し、電子線EBを光軸Cに沿つて
試料7に入射せしめている。この電子線EBの試
料7への入射によつて試料7より回折された電子
線DBは螢光板6上に投影され、螢光板6には例
えば、第2図に示す如き回折像DPが表示される。
FIG. 1 shows a conventional apparatus for obtaining this electron beam reflection diffraction image. In the figure, 1 is an electron gun, 2 is a focusing lens, 3 is an objective lens, 4 is an intermediate lens,
5 is a projection lens, and 6 is a fluorescent plate. In the conventional structure having such a structure, the crossover image P of the electron gun formed by the focusing lens 2 is focused on the object plane of the projection lens 5 by the objective and intermediate lenses 3 and 4, and then the crossover image P of the electron gun is formed by the focusing lens 2. The sample 7 is placed between the projection lens 5 and the fluorescent plate 6 so that the image of this crossover image P is formed on the fluorescent plate 6, and its surface has a slight angle with respect to the optical axis C. The electron beam EB is made incident on the sample 7 along the optical axis C. When the electron beam EB is incident on the sample 7, the electron beam DB diffracted from the sample 7 is projected onto the fluorescent plate 6, and a diffraction image DP as shown in FIG. 2 is displayed on the fluorescent plate 6, for example. Ru.

しかしながら、第1図及び第2図から明らかな
ように、従来においては、螢光板6の一部にのみ
電子線回折像を表示できるだけであり、表示面を
有効に使用して回折像を表示することはできなか
つた。
However, as is clear from FIGS. 1 and 2, in the past, the electron beam diffraction image could only be displayed on a portion of the fluorescent plate 6, and the display surface was effectively used to display the diffraction image. I couldn't do that.

又、標準試料の電子線反射回折像と分析すべき
試料の電子線反射回折像とを比較しようとする
と、試料を交換する等の面倒な作業を行わなけれ
ばならず、短時間に両像を切換えて比較観察する
ことができない。
Furthermore, when attempting to compare the electron beam reflection diffraction image of a standard sample and the electron beam reflection diffraction image of a sample to be analyzed, it is necessary to perform troublesome work such as exchanging the sample, and it is difficult to compare both images in a short time. It is not possible to switch and make comparative observations.

本考案は、このような従来の欠点を解決し、表
示又は記録面全体に回折像を投影し得ると共に、
短時間に異なつた試料の電子線反射回折像を切換
えて観察できる電子線反射回折像観察装置を提供
することを目的としている。
The present invention solves these conventional drawbacks, allows a diffraction image to be projected over the entire display or recording surface, and
It is an object of the present invention to provide an electron beam reflection diffraction image observation apparatus that can switch and observe electron beam reflection diffraction images of different samples in a short time.

本考案は電子銃よりの電子線のクロスオーバー
像を像表示のための検出面上に結像させるための
最終段集束レンズを含むレンズ系が備えられ、該
最終段集束レンズと該検出面との間に光軸から所
定の距離をおいて光軸に対して略対称的に複数の
試料が配置され、該複数の試料は互いに向き合う
面が前記検出面側を向くように光軸方向に対して
僅かに傾斜して配置され、前記最終段集束レンズ
の近傍に偏向器が配置され、該偏向器によつて光
軸から離れる向きに偏向された電子線を表面に対
して僅かな角度を成して前記複数の試料のうちの
一方に入射させるため前記最終段集束レンズによ
つて兼ねられるか又は別個に設けられた偏向手段
が配置され、電子線が照射される試料を前記複数
の試料間で切換えるための切換手段が備えられた
電子線反射回折像観察装置を特徴としている。
The present invention is equipped with a lens system including a final stage focusing lens for forming a crossover image of an electron beam from an electron gun on a detection surface for image display, and the final stage focusing lens and the detection surface are connected to each other. A plurality of samples are arranged substantially symmetrically with respect to the optical axis at a predetermined distance from the optical axis between the two, and the plurality of samples are arranged with respect to the optical axis direction so that the surfaces facing each other face the detection surface side. A deflector is disposed near the final stage focusing lens, and the electron beam deflected away from the optical axis by the deflector is deflected at a slight angle to the surface. In order to direct the electron beam to one of the plurality of samples, a deflection means, which is either combined with the final stage focusing lens or provided separately, is arranged to direct the sample to be irradiated with the electron beam between the plurality of samples. It is characterized by an electron beam reflection diffraction image observation apparatus equipped with a switching means for switching between the two.

以下、図面に基づき本考案の実施例を詳述す
る。
Hereinafter, embodiments of the present invention will be described in detail based on the drawings.

第3図は本考案の一実施例を示すもので、第3
図においては、第1図と同一の構成要素に対して
は同一番号が付されている。
Figure 3 shows one embodiment of the present invention.
In the figure, the same components as in FIG. 1 are given the same numbers.

12は偏向コイルであり、13は極性切換回
路、14は偏向コイル12に偏向電流を供給する
ための偏向電源である。投影レンズ5と螢光板6
との間には分析対象となる試料7aと標準試料7
bが配置されている。これら試料7a,7bは光
軸Cから所定の距離をおいて光軸Cに対して略対
称的に配置されている。試料7a,7bは互いに
向き合う面が螢光板側を向くように光軸Cの方向
に対して僅かに傾斜して配置されている。
12 is a deflection coil, 13 is a polarity switching circuit, and 14 is a deflection power source for supplying a deflection current to the deflection coil 12. Projection lens 5 and fluorescent plate 6
Between the sample 7a to be analyzed and the standard sample 7
b is placed. These samples 7a and 7b are arranged approximately symmetrically with respect to the optical axis C at a predetermined distance from the optical axis C. The samples 7a and 7b are arranged slightly inclined with respect to the direction of the optical axis C so that the surfaces facing each other face the fluorescent plate side.

このような構成において、前述した従来と同様
に、各レンズの励磁強度を調節して電子銃のクロ
スオーバー像Pを螢光板6上に結像させる。次
に、電源14及より偏向コイル12に供給される
電流を調節することにより、偏向コイル12によ
つて光軸Cから離れる向きに偏向された電子線を
投影レンズ5に入射させる。投影レンズ5は偏向
作用が有るため、電子線EBを光軸Cに向かう向
きに振り戻すが、投影レンズ5によつて振り戻さ
れた電子線が表面に対して僅かな角度を成して分
析対象試料7aに入射するように偏向電源14よ
り偏向コイル12に供給する電流を調整する。
In such a configuration, the excitation intensity of each lens is adjusted to form a crossover image P of the electron gun on the fluorescent plate 6, as in the prior art described above. Next, by adjusting the current supplied from the power supply 14 and the deflection coil 12, the electron beam deflected away from the optical axis C by the deflection coil 12 is made to enter the projection lens 5. Since the projection lens 5 has a deflection effect, the electron beam EB is deflected back toward the optical axis C, but the electron beam deflected back by the projection lens 5 forms a slight angle with the surface and is analyzed. The current supplied from the deflection power supply 14 to the deflection coil 12 is adjusted so that the current is incident on the target sample 7a.

その結果、電子線EBは試料7aに入射して反
射され、電子線反射回折像が螢光板6上に投影さ
れる。試料7aの面が光軸Cに対して従来より大
きな角度を成して配置された状態で、試料7aよ
り反射された回折電子線DBを螢光板6上に投影
できるため、螢光板6の全面を有効に用いて電子
線反射回折像を螢光板6上に表示できる。
As a result, the electron beam EB enters the sample 7a and is reflected, and an electron beam reflection diffraction image is projected onto the fluorescent plate 6. Since the diffracted electron beam DB reflected from the sample 7a can be projected onto the fluorescent plate 6 with the surface of the sample 7a arranged at a larger angle than the conventional one with respect to the optical axis C, the entire surface of the fluorescent plate 6 can be can be effectively used to display an electron beam reflection diffraction image on the fluorescent plate 6.

そこで、分析対象である試料7aに基づく電子
線反射回折像に代えて標準試料7bの電子線反射
回折像を表示しようとする場合には、極性切換回
路13を操作して偏向電源14から偏向コイル1
2に供給される電流の向きを逆にする。その結
果、電子線EBは第3図の点線で示すようにコイ
ル12によつて偏向された後、投影レンズ5によ
つて最初の場合とは逆向きに偏向されて標準試料
7bに入射する。その結果、標準試料7bに基づ
く電子線反射回折像が分析対象試料の場合と同様
に螢光板6上に表示される。
Therefore, when attempting to display an electron beam reflection diffraction image of the standard sample 7b instead of an electron beam reflection diffraction image based on the sample 7a to be analyzed, the polarity switching circuit 13 is operated to connect the deflection coil to the deflection power source 14. 1
Reverse the direction of the current supplied to 2. As a result, the electron beam EB is deflected by the coil 12 as shown by the dotted line in FIG. 3, and then deflected by the projection lens 5 in a direction opposite to the initial direction and enters the standard sample 7b. As a result, an electron beam reflection diffraction image based on the standard sample 7b is displayed on the fluorescent plate 6 in the same manner as in the case of the sample to be analyzed.

上述した実施例は本考案の一実施例を示すもの
で、本考案は変形して実施できる。
The above-mentioned embodiment shows one embodiment of the present invention, and the present invention can be implemented with modification.

例えば、上述した実施例においては、投影レン
ズ5を偏向手段として兼用させるようにしたが、
偏向コイル12を投影レンズの下段に配置すると
共に、偏向コイル12によつて光軸から離れる向
きに偏向された電子線を振り戻すための偏向コイ
ルをコイル12の下段に設けるようにしても良
い。
For example, in the embodiment described above, the projection lens 5 is also used as a deflecting means.
The deflection coil 12 may be disposed below the projection lens, and a deflection coil for deflecting the electron beam deflected away from the optical axis by the deflection coil 12 may also be disposed below the coil 12.

又、上述した実施例においては、表示のための
検出面として螢光板を用いたが、本考案は回折像
を表示装置に接続される光電検出面上に投影する
場合にも同様に適用できる。
Further, in the above-described embodiments, a fluorescent plate was used as a detection surface for display, but the present invention can be similarly applied to the case where a diffraction image is projected onto a photoelectric detection surface connected to a display device.

以上の説明より明らかなように、本考案によれ
ば、表示面上を有効に使用して回折像を投影でき
るだけでなく、切換手段を操作することにより、
異なつた試料に基づく電子線反射回折像を容易に
切換えて観察可能であり、分析対象試料の電子線
反射回折像を標準試料等のそれと容易に対比観察
でき、試料の分析性能を高めることができる。
As is clear from the above explanation, according to the present invention, not only can a diffraction image be projected by effectively using the display surface, but also by operating the switching means,
It is possible to easily switch and observe electron beam reflection diffraction images based on different samples, and it is possible to easily compare and observe the electron beam reflection diffraction image of the sample to be analyzed with that of a standard sample, etc., thereby improving the analysis performance of the sample. .

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来装置を例示するための図、第2図
は従来の欠点を説明するための図、第3図は本考
案の一実施例を示すための図である。 1:電子銃、2:集束レンズ、3:対物レン
ズ、4:中間レンズ、5:投影レンズ、6:写真
フイルム、7a:分析対象試料、7b:標準試
料、12:偏向コイル、14:偏向電源、13:
極性切換回路、C:光軸、EB:電子線、DB:回
折電子線。
FIG. 1 is a diagram for illustrating a conventional device, FIG. 2 is a diagram for explaining the drawbacks of the conventional device, and FIG. 3 is a diagram for showing an embodiment of the present invention. 1: Electron gun, 2: Focusing lens, 3: Objective lens, 4: Intermediate lens, 5: Projection lens, 6: Photographic film, 7a: Sample to be analyzed, 7b: Standard sample, 12: Deflection coil, 14: Deflection power supply , 13:
Polarity switching circuit, C: optical axis, EB: electron beam, DB: diffraction electron beam.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 電子銃よりの電子線のクロスオーバー像を像表
示のための検出面上に結像させるための最終段集
束レンズを含むレンズ系が備えられ、該最終段集
束レンズと該検出面との間に光軸から所定の距離
をおいて光軸に対して略対称的に複数の試料が配
置され、該複数の試料は互いに向き合う面が前記
検出面側を向くように光軸方向に対して僅かに傾
斜して配置され、前記最終段集束レンズの近傍に
偏向器が配置され、該偏向器によつて光軸から離
れる向きに偏向された電子線を表面に対して僅か
な角度を成して前記複数の試料のうちの一方に入
射させるため前記最終段集束レンズによつて兼ね
られるか又は別個に設けられた偏向手段が配置さ
れ、電子線が照射される試料を前記複数の試料間
で切換えるための切換手段が備えられた電子線反
射回折像観察装置。
A lens system including a final stage focusing lens for forming a crossover image of the electron beam from the electron gun on a detection surface for image display is provided, and a lens system is provided between the final stage focusing lens and the detection surface. A plurality of samples are arranged approximately symmetrically with respect to the optical axis at a predetermined distance from the optical axis, and the plurality of samples are arranged slightly with respect to the optical axis direction so that the surfaces facing each other face the detection surface side. A deflector is disposed in the vicinity of the final stage focusing lens, and the electron beam deflected by the deflector in a direction away from the optical axis is directed at a slight angle to the surface. In order to make the electron beam incident on one of the plurality of samples, a deflection means is provided which is either combined with the final stage focusing lens or provided separately, and for switching the sample to be irradiated with the electron beam between the plurality of samples. An electron beam reflection diffraction image observation device equipped with a switching means.
JP12527683U 1983-08-12 1983-08-12 Electron beam reflection diffraction image observation device Granted JPS6032756U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12527683U JPS6032756U (en) 1983-08-12 1983-08-12 Electron beam reflection diffraction image observation device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12527683U JPS6032756U (en) 1983-08-12 1983-08-12 Electron beam reflection diffraction image observation device

Publications (2)

Publication Number Publication Date
JPS6032756U JPS6032756U (en) 1985-03-06
JPH037880Y2 true JPH037880Y2 (en) 1991-02-27

Family

ID=30285289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12527683U Granted JPS6032756U (en) 1983-08-12 1983-08-12 Electron beam reflection diffraction image observation device

Country Status (1)

Country Link
JP (1) JPS6032756U (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4429151Y1 (en) * 1968-04-18 1969-12-03
JPS58158846A (en) * 1982-03-15 1983-09-21 Jeol Ltd Electron microscope

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4429151Y1 (en) * 1968-04-18 1969-12-03
JPS58158846A (en) * 1982-03-15 1983-09-21 Jeol Ltd Electron microscope

Also Published As

Publication number Publication date
JPS6032756U (en) 1985-03-06

Similar Documents

Publication Publication Date Title
US4983832A (en) Scanning electron microscope
JPS6011325B2 (en) scanning device
US3714425A (en) Reflecting mirror type electron microscope
JPH037880Y2 (en)
US20030020016A1 (en) Scanning particle mirror microscope
JPS5854784Y2 (en) Stereo scanning electron microscope
GB1300624A (en) Charged particle beam apparatus having means to observe a stereo-image of a specimen
JPH09223478A (en) Transmission electron microscope
JPH0827431B2 (en) Scanning optical microscope
JPS61230114A (en) Optical device for alignment
JPS63131060U (en)
JPH0234750Y2 (en)
JPH0243089Y2 (en)
JPH10104522A (en) Con-focal scanning optical microscope
JPS586267B2 (en) scanning electron microscope
JPS6352427B2 (en)
JPH0821354B2 (en) Scanning Convergent Electron Diffractometer
JPS6329928B2 (en)
JPS6125043A (en) Crystal-orientation determining method by scanning electron microscope and scanning electron microscope employed
JPH03216942A (en) Charged beam device and axis aligning method thereof
JPS5820456B2 (en) Ritsutaisou Sagatadenshikenbikiyou
JPH0821353B2 (en) Focusing device for electron microscope
JPS6252838A (en) Scanning type electron microscope
JPS5820098B2 (en) Electron beam deflection scanning device
JPS58204454A (en) Reflected electron diffraction microscopic device of scanning type