JPH0376022B2 - - Google Patents
Info
- Publication number
- JPH0376022B2 JPH0376022B2 JP61068555A JP6855586A JPH0376022B2 JP H0376022 B2 JPH0376022 B2 JP H0376022B2 JP 61068555 A JP61068555 A JP 61068555A JP 6855586 A JP6855586 A JP 6855586A JP H0376022 B2 JPH0376022 B2 JP H0376022B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- silicon
- forming
- gas
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000012808 vapor phase Substances 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 239000010408 film Substances 0.000 description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 238000010586 diagram Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Description
【発明の詳細な説明】
＜産業上の利用分野＞
本発明は、光化学気相反応による例えば層間絶
縁膜等の形成方法の改良に関し、特に厚いシリコ
ン系絶縁膜を短時間に形成する絶縁膜形成方法に
関するものである。Detailed Description of the Invention <Industrial Application Field> The present invention relates to an improvement in a method for forming, for example, an interlayer insulating film using a photochemical vapor phase reaction, and in particular to an insulating film formation method for forming a thick silicon-based insulating film in a short time. It is about the method.
＜従来の技術＞
近年、定温で無損傷の膜が形成されるというこ
とで、光エネルギーを用いた光化学気相反応によ
る薄膜形成方法が注目されている。この光化学気
相反応により形成した絶縁膜は、常圧化学気相成
長法による絶縁膜に比して、段差被覆性、電気的
特性等において優れている。<Prior Art> In recent years, thin film forming methods using photochemical vapor phase reactions using light energy have been attracting attention because damage-free films can be formed at constant temperatures. An insulating film formed by this photochemical vapor phase reaction is superior in step coverage, electrical properties, etc., compared to an insulating film formed by atmospheric pressure chemical vapor deposition.
＜発明が解決しようとする問題点＞
しかしながら、直接励起光化学反応による薄膜
形成においては、成膜速度が低く、例えば層間絶
縁膜として必要とされる膜厚（例えば200nｍ）
を形成するのに非常に長い時間を要するという欠
点を備えている。<Problems to be Solved by the Invention> However, in thin film formation by direct excitation photochemical reaction, the film formation rate is low, and the film thickness required for an interlayer insulating film (for example, 200 nm) is low.
The disadvantage is that it takes a very long time to form.
本発明は、上記の点に鑑みて創案されたもので
あり、基板上に低温で短時間に特性の優れた絶縁
膜を形成する絶縁膜形成方法を提供することを目
的としている。 The present invention was devised in view of the above points, and an object of the present invention is to provide an insulating film forming method for forming an insulating film with excellent characteristics on a substrate at low temperature in a short time.
＜問題点を解決するための手段＞
上記の目的を達成するため、本発明の絶縁膜形
成方法は、基板上に光化学気相反応によりシリコ
ン系絶縁膜を形成する工程において、電気的特性
に優れたSiH4／N2O系ガスによる第１のシリコ
ン系絶縁膜を形成する工程と、この第１のシリコ
ン系絶縁膜上に成膜速度の高いSi2H6／O2系ガス
による第２のシリコン系絶縁膜を形成するように
構成している。<Means for Solving the Problems> In order to achieve the above-mentioned object, the insulating film forming method of the present invention has excellent electrical properties in the step of forming a silicon-based insulating film on a substrate by photochemical vapor phase reaction. A step of forming a first silicon-based insulating film using SiH 4 /N 2 O-based gas, and a second step using Si 2 H 6 /O 2- based gas, which has a high deposition rate, on the first silicon-based insulating film. The structure is such that a silicon-based insulating film is formed.
＜作用＞
上記のような構成により、絶縁膜形成の所望時
間を著しく短縮化することが出来、また上記した
実施態様にあつては、例えばSiH4／N2O系シリ
コン酸化膜のみによる層間絶縁膜の形成に比し
て、絶縁膜形成の所要時間を著しく短縮すること
が出来る。<Function> With the above configuration, the required time for forming an insulating film can be significantly shortened, and in the above embodiment, for example, interlayer insulation using only a SiH 4 /N 2 O-based silicon oxide film can be achieved. The time required for forming an insulating film can be significantly shortened compared to forming a film.
＜実施例＞
以下、図面を参照して、本発明の一実施例を詳
細に説明する。<Example> Hereinafter, an example of the present invention will be described in detail with reference to the drawings.
第１図は本発明の絶縁膜形成方法を実施するた
めに用いた薄膜形成装置の一例を示す模式図であ
り、第１図において、１は反応室（試料室）、２
はウエハーサセプタ、３はシリコンウエハ、４は
IRランプ、５は合成石英、６は水銀灯（Hgラン
プ）、７はガス導入口、８はゲートバルブ、９は
メカニカルブースタポンプ、１０は油回転ポンプ
である。 FIG. 1 is a schematic diagram showing an example of a thin film forming apparatus used to carry out the insulating film forming method of the present invention. In FIG. 1, 1 is a reaction chamber (sample chamber);
is the wafer susceptor, 3 is the silicon wafer, and 4 is the wafer susceptor.
IR lamp, 5 is synthetic quartz, 6 is a mercury lamp (Hg lamp), 7 is a gas inlet, 8 is a gate valve, 9 is a mechanical booster pump, and 10 is an oil rotary pump.
上記のように構成された装置の試料室１内のウ
エハーサセプタ２上に、まずＰ型（100）シリコ
ン（Si）基板（15〜20Ω・cm）３を設置し、次に
ロータリーポンプ１０を作動させて試料室１内の
圧力を粗引きした後、メカニカルブースタポンプ
９を用いて試料室１内を10-3〔Torr〕まで真空排
気した。この非気操作中にIRランプ４を用いて
基板３の温度を300〔℃〕まで上昇させて保持し
た。上記のメカニカルブースタポンプ９によつて
10-3〔Torr〕以下まで真空引きした後、シラン
（SiH4）ガス及びN2Oガスを、ガス導入口７より
例えばそれぞれ15〔SCCM〕及び250〔SCCM〕導
入し、試料室１内の圧力を2.5〔Torr〕に保持し、
水銀灯（Hgランプ）６を用いて、シリコン基板
３上に第１のシリコン系絶縁膜としてのシリコン
酸化膜を形成した。 First, a P-type (100) silicon (Si) substrate (15 to 20 Ω cm) 3 is placed on the wafer susceptor 2 in the sample chamber 1 of the apparatus configured as described above, and then the rotary pump 10 is activated. After roughly evacuation of the pressure inside the sample chamber 1, the inside of the sample chamber 1 was evacuated to 10 -3 [Torr] using the mechanical booster pump 9. During this non-air operation, the temperature of the substrate 3 was raised to 300 [° C.] and maintained using the IR lamp 4. By the above mechanical booster pump 9
After evacuation to 10 -3 [Torr] or less, silane (SiH 4 ) gas and N 2 O gas are introduced from the gas inlet 7 to, for example, 15 [SCCM] and 250 [SCCM], respectively, to the inside of the sample chamber 1. Maintain the pressure at 2.5 [Torr],
A silicon oxide film as a first silicon-based insulating film was formed on the silicon substrate 3 using a mercury lamp (Hg lamp) 6.
次にガス導入口７を閉じ、メカニカルブースタ
ポンプ９を用いて試料室１内を10-3〔Torr〕以下
まで真空排気した後、ジシラン（Si2H6）ガス及
びO2ガスを、ガス導入口７より例えばそれぞれ
３〔SCCM〕、250〔SCCM〕導入し、試料室１内の
圧力を2.5〔Torr〕に保持し、水銀灯（Hgランプ）
６を用いて、上記のSiH4／N2O系シリコン酸化
膜を形成した基板３上に第２のシリコン系絶縁膜
としてのシリコン酸化膜を連続的に160nｍ形成
した。 Next, the gas inlet 7 is closed and the inside of the sample chamber 1 is evacuated to 10 -3 [Torr] or less using the mechanical booster pump 9, and then disilane (Si 2 H 6 ) gas and O 2 gas are introduced. For example, 3 [SCCM] and 250 [SCCM] are introduced from port 7, the pressure inside sample chamber 1 is maintained at 2.5 [Torr], and a mercury lamp (Hg lamp) is introduced.
6 was used to continuously form a silicon oxide film of 160 nm as a second silicon-based insulating film on the substrate 3 on which the SiH 4 /N 2 O-based silicon oxide film was formed.
次にガス導入口７を閉じ、メカニカルブースタ
ーポンプ９を用いて、試料室１内を10-3〔Torr〕
以下まで排気した後、試料室１内にN2ガスを導
入して大気圧にもどし、試料室１を開いて試料３
を取り出した。 Next, close the gas inlet 7 and use the mechanical booster pump 9 to pump the inside of the sample chamber 1 to 10 -3 [Torr].
After exhausting the air to below, introduce N2 gas into the sample chamber 1 to return it to atmospheric pressure, open the sample chamber 1, and
I took it out.
なお、第２図はSiH4／N2O系、Si2H6／O2系シ
リコン酸化膜の成長速度の基板温度依存性を示し
たものであり、第３図はSiH4／N2O系、Si2H6／
O2系のシリコン酸化膜を形成した試料について、
それぞれMISキヤパシタを作製して、電気−電圧
特性を示したものである。 Furthermore, Figure 2 shows the substrate temperature dependence of the growth rate of SiH 4 /N 2 O-based and Si 2 H 6 / O 2 - based silicon oxide films. system, Si 2 H 6 /
Regarding the sample in which an O 2 -based silicon oxide film was formed,
MIS capacitors were fabricated and their electrical-voltage characteristics were shown.
上記した本発明の実施例によれば、例えば膜厚
200nｍの絶縁膜を約60分で形成することが出来
る。 According to the embodiment of the present invention described above, for example, the film thickness
A 200nm insulating film can be formed in about 60 minutes.
これに対してSiH4／N2O系ガスのみを用いて
膜厚200nｍの絶縁膜を形成した場合、約250分の
時間を要した。 On the other hand, when an insulating film with a thickness of 200 nm was formed using only SiH 4 /N 2 O-based gas, it took about 250 minutes.
また高次シランガスを用いた場合所望の膜厚の
絶縁膜をより短時間に形成することが出来るが、
この場合、第３図からも明らかなように絶縁耐圧
等の電気的特性が劣化したものになり好ましくな
い。 Furthermore, when using high-order silane gas, an insulating film of a desired thickness can be formed in a shorter time.
In this case, as is clear from FIG. 3, electrical characteristics such as dielectric strength voltage deteriorate, which is not preferable.
これに対して、上記した実施例にあつては第１
の絶縁膜として電気的特性に優れたSiH4／N2O
系によるシリコン酸化膜を用い、その第１の絶縁
膜の上に成膜速度の速いSi2H6／O2系によるシリ
コン酸化膜を用いるようにし、結果として所望の
膜厚の絶縁膜を短時間に、しかも電気的特性を劣
化させることなく形成されることになる。 On the other hand, in the above embodiment, the first
SiH 4 /N 2 O has excellent electrical properties as an insulating film for
A Si 2 H 6 /O 2 based silicon oxide film, which has a high deposition rate, is used on top of the first insulating film, and as a result, the desired thickness of the insulating film can be shortened. It can be formed in a short time and without deteriorating the electrical characteristics.
なお、本発明は上記実施例に限定されるもので
はなく、その要旨を逸脱しない範囲で種々の変形
で実施することが可能であり、例えば膜構成とし
ては、SiH4／N2O系、Si2H6／O2系のシリコン酸
化膜の２層構造に限定されるものではなく、例え
ば３層構造を用いても良いことは言うまでもな
い。 It should be noted that the present invention is not limited to the above embodiments, and can be implemented in various modifications without departing from the gist thereof. For example, the film structure may be SiH 4 /N 2 O system, Si It goes without saying that the structure is not limited to the two-layer structure of the 2 H 6 /O 2 -based silicon oxide film, and for example, a three-layer structure may be used.
更に、上記した試料室内のガス圧力や基板加熱
温度、各酸化膜の膜厚等の条件は仕様等に応じて
適宜定めれば良いことは言うまでもない。 Furthermore, it goes without saying that conditions such as the gas pressure in the sample chamber, the substrate heating temperature, and the film thickness of each oxide film may be determined as appropriate according to specifications and the like.
＜発明の効果＞
以上のように本発明によれば、リーク電流の低
減をはかると共に、低温での絶縁膜の形成を短時
間で行なうことが出来、その結果として層間絶縁
膜への応用ができ、極めて有効なものである。<Effects of the Invention> As described above, according to the present invention, leakage current can be reduced and an insulating film can be formed at low temperatures in a short time, and as a result, it can be applied to interlayer insulating films. , is extremely effective.
第１図は、本発明の絶縁膜形成方法を実施する
ために用いる薄膜形成装置の一構成例を示す模式
図、第２図はSiH4／N2O系、Si2H6／O2系シリコ
ン酸化膜の成膜速度の基板温度依存性を示す図、
第３図は各シリコン酸化膜の電流−電圧特性を示
す図である。
１……試料室、２……ウエハーサセプタ、３…
…シリコンウエハ、４……IRランプ、６……水
銀灯（Hgランプ）、７……ガス導入口。
FIG . 1 is a schematic diagram showing a configuration example of a thin film forming apparatus used to carry out the insulating film forming method of the present invention . FIG . A diagram showing the dependence of silicon oxide film deposition rate on substrate temperature,
FIG. 3 is a diagram showing the current-voltage characteristics of each silicon oxide film. 1...Sample chamber, 2...Wafer susceptor, 3...
...Silicon wafer, 4...IR lamp, 6...Mercury lamp (Hg lamp), 7...Gas inlet.
Claims (1)
縁膜を形成する工程において、 SiH4／N2O系ガスを用いて第１のシリコン系
絶縁膜を形成する第１工程と、 前記第１のシリコン系絶縁膜上に前記第１工程
より速い成膜速度により、Si2H6／O2系ガスを用
いて第２のシリコン系絶縁膜を形成する第２工程
と、 を含み、多層構造の絶縁膜を形成してなることを
特徴とする絶縁膜形成方法。[Scope of Claims] 1. In the step of forming a silicon-based insulating film on a substrate by photochemical vapor phase reaction, a first step of forming a first silicon-based insulating film using SiH 4 /N 2 O-based gas; a second step of forming a second silicon-based insulating film on the first silicon-based insulating film using a Si 2 H 6 /O 2- based gas at a deposition rate faster than that in the first step; 1. A method for forming an insulating film, comprising: forming an insulating film with a multilayer structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6855586A JPS62226631A (en) | 1986-03-28 | 1986-03-28 | Forming method for insulating film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6855586A JPS62226631A (en) | 1986-03-28 | 1986-03-28 | Forming method for insulating film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62226631A JPS62226631A (en) | 1987-10-05 |
| JPH0376022B2 true JPH0376022B2 (en) | 1991-12-04 |
Family
ID=13377122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6855586A Granted JPS62226631A (en) | 1986-03-28 | 1986-03-28 | Forming method for insulating film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62226631A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5024593A (en) * | 1973-07-03 | 1975-03-15 | ||
| JPS5958819A (en) * | 1982-09-29 | 1984-04-04 | Hitachi Ltd | Formation of thin film |
-
1986
- 1986-03-28 JP JP6855586A patent/JPS62226631A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5024593A (en) * | 1973-07-03 | 1975-03-15 | ||
| JPS5958819A (en) * | 1982-09-29 | 1984-04-04 | Hitachi Ltd | Formation of thin film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62226631A (en) | 1987-10-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |