JPH0374035B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor device comprising high-power elements such as transistors and thyristors, and particularly to a semiconductor device used in a press-contact type module. [Technical Background of the Invention] Conventionally, as a module for high power, for example,
There is a transistor module shown in the figure. In the figure, 1 is a first transistor composite consisting of a power transistor 11 and a diode 12; 2
is a second transistor complex, also consisting of a power transistor 13 and a diode 14.
This transistor module has these first and second transistor composites 1 and 2 adhered to a common metal substrate 17 via insulating substrates 15 and 16, respectively, and surrounds and accommodates these transistor composites 1 and 2 . Common package 18
Above, the collector electrode terminal 19 of the first transistor complex 1 , the collector electrode terminal 21 of the second transistor complex 2 connected to the emitter electrode terminal 20 of the first transistor complex 1, and the second transistor complex 1. The emitter electrode terminals 22 of the body 2 are respectively led out and arranged. With the above configuration, this transistor module can be easily assembled into an electrical device,
The space required for assembly is also reduced, and weight reduction can be achieved. [Problems with Background Art] However, conventional transistor modules have the following drawbacks. That is, since the connections from each emitter electrode and cathode electrode of the first transistor composite 1 and the second transistor composite 2 are taken out by bonding or soldering, it is suitable for a transistor module with a large current, for example, 100 A or more. In this case, current will be concentrated at the connection points such as bonding. For this reason,
Thermal strain and thermal fatigue were caused, and it was difficult to increase the power consumption. Furthermore, if a bonding or other connection point were to break down due to overcurrent, there was a risk that a type of explosive would occur, with molten silicon spewing out of the package. [Object of the Invention] The present invention has been made in view of the above-mentioned circumstances, and its purpose is to prevent current concentration at the connection points between multiple electrodes and elements, and to provide a semiconductor device with excellent reliability. There is a particular thing. [Summary of the Invention] The present invention comprises a support base that also serves as heat dissipation, a common insulating plate disposed on the support base, and a plurality of press-contact type semiconductor element structures placed on the common insulating plate. , a plurality of electrodes electrically connected to the plurality of semiconductor element structures, a plurality of spring structures for connecting the semiconductor element structures and the electrodes under pressure, and a plurality of spring structures attached to the electrodes along the direction in which the electrodes are pressed. an external connection terminal provided along the electrode; an internal connection terminal provided on the electrode along the direction in which the electrode is applied; adjacent internal connection terminals are in sliding contact so as to be movable in the direction in which the electrode is applied; and the adjacent internal connection terminal The semiconductor device is provided with a fixing member for fixing the components, and a lid body provided on the support base, covering the semiconductor element structure, and through which the external connection terminals are led out. Therefore, when the semiconductor element structures and the electrodes are respectively pressurized by the spring structures, the electrodes do not tilt, so it is possible to connect a plurality of semiconductor element structures and electrodes with equal pressure. It is something. [Embodiment of the Invention] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 2 is a plan view showing an example in which the present invention is applied to a pressure contact type transistor module, and FIG. 3 is a partial sectional view of the same. In FIGS. 2 and 3, reference numeral 31 denotes a heat dissipation board made of a metal that is a good thermal conductor, such as aluminum die-casting. A ceramic plate 32 that is electrically insulated and common to each semiconductor element 35, which will be described later, is placed inside the heat dissipation board 31. On this ceramic plate 32, a fourth
As shown in the figure, two collector electrodes 33a and 33b made of copper, for example, are placed at predetermined positions. These collector electrodes 33a and 33b each have an external connection terminal 34 bent in a direction perpendicular to the pressure contact surface.
a, 34b, and these external connection terminals 3
4a and 34b both extend upward from a lid 52, which will be described later. On the collector electrodes 33a and 33b, a semiconductor element 35 having two circuit elements each including a main transistor and a feedback diode made of the same semiconductor substrate is placed. Emitter plates 36a and 36b made of copper, for example, are placed on these semiconductor elements 35, respectively. Both of these emitter plates 36a and 36b are attached with a base lead 37, an insulating guide body 38, and a spring spring 39, as shown in FIG. The base lead 37 can be contacted. Emitsuta board 36
Emitter electrodes 40a and 36b are provided on a and 36b, respectively.
40b is placed. One emitter electrode 4
0a is the collector electrode 3 as shown in FIG.
3a and 33b, it has an external connection terminal 41a that is bent in a direction perpendicular to the pressure contact surface, and this external connection terminal 41a is also attached to the cover body 52, which will be described later.
It is derived upward from . The other emitter electrode 40b has an internal connection terminal 42b bent in a direction perpendicular to the pressure contact surface. Also,
Opposed to this internal connection terminal 42b, the collector electrode 33a has an internal connection terminal 42a having the same shape. For example, a U-shaped groove 43 is provided at the tip of each of these internal connection terminals 42a, 42b, and by tightening and fixing a bolt 44 and a nut 45 in this groove 43, the collector electrode 33a
and emitter electrode 40b are electrically connected, and 2
It is designed to serve as a common electrode between two semiconductor elements 35. On the emitter electrodes 40a, 40b are insulators 46a, 46 that can withstand spring pressure, respectively.
b. Disc springs 47a, 47b and metal fixing plates 48a, 48 incorporated in these insulators 46a, 46b
A spring structure consisting of b is provided. The metal fixing plates 48a and 48b have bolts 49a and 49, respectively.
b is fixed to the heat dissipation board 31. As a result, the disk spring 48 is connected between each of the electrodes, the semiconductor element 35, the ceramic substrate 32, and the heat dissipation substrate 31.
They are pressed into contact by the elastic force of a and 48b. Further, drive circuit elements 50 such as a drive transistor and a speed-up diode are attached to the collector electrodes 33a and 33b, respectively, in addition to the semiconductor element 35 such as the main transistor, which is in pressure contact with the above-mentioned spring structure. The connection is fixed by soldering. Furthermore, 51a,
51b are external connection terminals connected to the base terminal, emitter terminal, base intermediate terminal, etc., respectively. The unit in which the circuit is constructed in this manner is protected by a gel material to prevent an insulating film between the electrodes, and the heat dissipation board 31 is covered with a lid 52 made of, for example, epoxy resin. The gap between the heat dissipation board 31 and the lid 52 is filled with, for example, an epoxy resin adhesive 53a. Furthermore, the gaps between the lid body 52 and the external connection terminals 34a, 34b, 41a and external connection terminals 51a, 51b led out from the lid body 52 are also filled with epoxy resin adhesives 53b, 53c. . One of the adhesives 53a has a coefficient of thermal expansion close to that of aluminum, which is the material for forming the heat dissipation board 31, and the other adhesives 53b and 53c
By using a material having a coefficient of thermal expansion close to that of copper, which is the material for forming the external connection terminals 34a to 51b, the sealing effect thereof becomes thermally strong.
In addition, the lid 52 is provided with a tube 54, and nitrogen is sealed in the gel inside the lid 52 through this tube 54 to form a space layer, thereby mitigating the expansion of the gel due to temperature rise. I'm starting to do that. In the above pressure contact type transistor module, when assembling it, first, the emitter electrodes 40a, 4
A spring structure such as disc springs 47a and 47b is placed on 0b, and the bolts 49a and 49b are individually tightened and adjusted to press the two semiconductor elements 35 evenly. Thereafter, by tightening the bolt 44 and nut 45 in this state, the internal connection terminal 42a of the collector electrode 33a serving as a common electrode and the internal connection terminal 42b of the emitter electrode 40b are electrically connected and fixed. When it is desired to bring the electrode surfaces of two or more circuit components into pressure contact at the same time using one common electrode, it is extremely difficult to bring them into even pressure contact due to the dimensional accuracy of the components and semiconductor elements, causes a pressure imbalance. In this case, pressure is concentrated locally, causing mechanical strain and deteriorating the semiconductor element, or if heat is dissipated locally, temperature rises and the semiconductor element is deteriorated. In the transistor module described above, two circuit elements, the main transistor and the feedback diode, are incorporated into one semiconductor element 35, and the electrodes of both are pressurized at the same time, so that they can be brought into contact with pressure evenly. In addition, the common electrode between the semiconductor elements 35, 35 is divided (collector electrode 33a and emitter electrode 40).
b) By providing internal connection terminals 42a and 42b facing each other, both electrodes can be slid in a direction perpendicular to the pressure contact surface, and after bringing both electrodes into pressure contact with each other separately, Since the two semiconductor elements 35 are connected and fixed to form a common electrode, each electrode can be evenly pressed into contact between the two semiconductor elements 35. Furthermore, there are parts of semiconductor components in which current can be drawn by spring pressure contact, and parts in which it is difficult to draw current by pressure contact. If the parts that are difficult to draw are also pressed by springs, the area efficiency is poor.
It is uneconomical. In the transistor module described above, the semiconductor element 35 such as the main transistor, which is easy to pull out, has a pressure contact structure using a spring structure, and the drive circuit element 50, such as the drive transistor, which is difficult to pull out, is attached to an electrode with solder or the like at a location other than the pressure contact part. Since they are connected, area efficiency is good and miniaturization is possible. In the above embodiment, the collector electrode 33a on one semiconductor element 35 side and the emitter electrode 40b on the other semiconductor element side are used as common electrodes, and the circuit configuration is in series. However, when the circuit configuration is in parallel, In this case, the emitter electrodes 40a and 40b may be used as common electrodes, and each may be provided with an internal connection terminal. Furthermore, in the above embodiment, a plurality of circuit components such as the main transistor and the feedback transistor are integrated into one semiconductor element 35, and this is pressed into contact with one set of spring structures.
These circuit components may be made into individual elements, and a structure may be adopted in which a plurality of these elements are simultaneously pressed together by a set of spring structures. Furthermore, in the above embodiment,
Although an example in which the present invention is applied to a transistor module has been described, the present invention is not limited to this, and of course can be applied to other thyristor modules. [Effects of the Invention] As described above, according to the present invention, a plurality of semiconductor element structures and a plurality of electrodes are connected to each other under pressure using a spring structure, each electrode is provided with an internal connection terminal, and an adjacent internal connection terminal is provided to each electrode. Since the connection terminals are movably in sliding contact with each other along the direction of pressure applied by the spring structure, and these internal connection terminals can be fixed by the fixing member, the semiconductor element structure and the electrodes can be connected to each other by the spring structure. It is possible to provide a semiconductor device in which the electrodes do not tilt when pressure is applied, and a plurality of semiconductor element structures and the electrodes can be connected to each other evenly by pressure.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing the structure of a conventional transistor module, FIG. 2 is a plan view showing the structure of a transistor module according to an embodiment of the present invention, FIG. 3 is a sectional view thereof, and FIG. FIG. 2 is a perspective view showing the structure of the electrode in the module, and FIG. 5 is a sectional view showing the structure of the emitter plate. 31... Heat dissipation board, 32... Ceramic board, 3
3a, 33b...Collector electrode, 34a, 34b
...External connection terminal, 35...Semiconductor element, 36
a, 36b... Emitsuta board, 40a, 40b...
Emitter electrode, 41a...external connection terminal, 42
a, 42b...Internal connection terminal, 46...Insulator,
47a, 47b... disc spring, 48a, 48b...
Metal fixing plate, 49a, 49b... Bolt, 50...
... Drive circuit element, 52 ... Lid, 53a, 53
b, 53c...adhesive material.

Claims (1)

[Scope of Claims] 1. A support base that also serves as heat radiation; a common insulating plate disposed on the support base; a plurality of press-contact type semiconductor element structures placed on the common insulating plate; a plurality of electrodes each electrically connected to a plurality of semiconductor element structures; a plurality of spring structures for connecting the semiconductor element structures and the electrodes under pressure; and a plurality of spring structures provided on the electrodes along the direction in which the electrodes are pressed. an external connection terminal provided on the electrode along the pressurizing direction of the electrode, and an internal connection terminal in which adjacent ones are slidably in contact with each other so as to be movable in the pressurizing direction; A semiconductor device comprising: a fixing member for fixing; and a lid provided on the support base, covering the semiconductor element structure, and through which the external connection terminal is led out. 2. The semiconductor device according to claim 1, wherein the plurality of semiconductor element structures are formed of the same semiconductor substrate. 3. The semiconductor element structure includes a transistor and a feedback diode, the transistor and the feedback diode are connected to the electrode by means of the spring structure, and the drive transistor or the drive circuit element is connected to the electrode by means other than the pressure connection. 3. The semiconductor device according to claim 1, wherein the semiconductor device is connected to a part of the semiconductor device. 4. The external connection terminal is led out through the lid, the support base is made of metal, and the lid is made of resin, and between the support base and the lid, the lid and the external connection terminal are connected. 2. The semiconductor device according to claim 1, wherein the space between and is sealed with a resin material having a different coefficient of thermal expansion.