JPH0372709B2 - - Google Patents
Info
- Publication number
- JPH0372709B2 JPH0372709B2 JP60061606A JP6160685A JPH0372709B2 JP H0372709 B2 JPH0372709 B2 JP H0372709B2 JP 60061606 A JP60061606 A JP 60061606A JP 6160685 A JP6160685 A JP 6160685A JP H0372709 B2 JPH0372709 B2 JP H0372709B2
- Authority
- JP
- Japan
- Prior art keywords
- chromium
- thin film
- ppm
- tape
- iron content
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 37
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 35
- 229910052804 chromium Inorganic materials 0.000 claims description 33
- 239000011651 chromium Substances 0.000 claims description 33
- 239000010409 thin film Substances 0.000 claims description 27
- 229910052742 iron Inorganic materials 0.000 claims description 17
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 239000012535 impurity Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000007670 refining Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910021543 Nickel dioxide Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- UPHIPHFJVNKLMR-UHFFFAOYSA-N chromium iron Chemical compound [Cr].[Fe] UPHIPHFJVNKLMR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 150000002505 iron Chemical class 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000003832 thermite Substances 0.000 description 1
- 238000009849 vacuum degassing Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
「産業上の利用分野」
この発明は、薄膜形成に使用されるスパツタリ
ング用クロムターゲツトに関する。
「従来の技術」
従来、スパツタリングによるクロム薄膜形成
は、
(イ) プラスチツクスを下地にし、クロム薄膜を形
成させ、車のダンパー、取手などに使う。
(ロ) ガラスを下地にしてクロム薄膜を片面にのみ
形成させ、鏡として使う。
(ハ) ガラスを下地にしてクロム薄膜を片面にのみ
形成させ、レジスト塗布、露光、エツチングを
行ない、これをフオトマスクとして使う。
などに利用されている。
「発明が解決しようとする問題点」
ところで、従来のスパツタリングによるクロム
薄膜形成においては、形成されたクロム薄膜と下
地との密着性が満足いくものではないため、下地
とクロム薄膜との間にアンダーコートとしてニツ
ケルや二酸化硅素などの薄膜を介在させるなどの
対策をとつている場合が多く、そのため工数がか
かつており、その解決が望まれていた。
「問題点を解決するための手段」
本発明者らは、上記従来の問題点を解決するた
めに鋭意研究を重ねたところ、次のような知見を
得るに至つた。
すなわち、周知のように、従来のクロムターゲ
ツトの多くは、その原料としてテルミツト法ある
いは電解精製法により製造された金属クロムを用
いている。これらの金属クロムにはその製造上、
不可避的に鉄が混入してしまい、通常その含有量
は70〜5000ppm程度である。そして、この鉄成分
がクロム薄膜の下地に対する密着性を低下させて
いることが判明した。さらに、この現象は、鉄の
含有量が45ppmを越えた場合に生じ、鉄の含有量
を45ppm以下に抑えておけば、密着性は低下せ
ず、充分な密着性を得られることが判つた。
また、このような金属クロムには、Al、Pb、
Cu、Mn、Mg等の不純物が混入しているが、こ
れらの不純物は金属クロム製造途中でいずれも簡
単に除去して10ppm未満に抑えることができ、こ
れらごく少量の不純物金属が上記密着性を低下さ
せているのではないことが判つた。
この発明は上記知見に基づいてなされたもので
あり、クロムターゲツトを構成する原料中の鉄の
含有量を0.5〜45ppmに調整したことを特徴とす
るものである。ここで、鉄の含有量を0.5ppm以
上としたのは、経済的に0.5ppm以下に調整する
ことがむずかしいからである。
「作用」
上記構成によれば、下地とクロム薄膜との間に
アンダーコートを施さなくても容易にクロム薄膜
の密着性を向上させることができ、しかも、コス
ト高を招くこともない。
「実施例」
以下この発明の一実施例を説明する。
まず、H2SO4浴でクロム酸（CrO3）の電解精
製を行つた。
この電解精製において、電解液（H2SO4）を
循環させ、その循環途中で、濾過およびFeイオ
ン選択性隔膜を用いて残渣および不純物を除去す
ることにより、電解液の浄化を繰り返し行つた。
電解条件は以下の通り、
CrO3濃度：130ｇ／、
SO2 -濃度：３ｇ／、
陰極電流密度：40A／cm2、
電解液温度：80℃
このような、条件下の電解精製において、電解
液の循環量を変えて鉄の含有量が0.5〜45ppmの
金属クロムを得た。その結果を次頁の表に示す。
なお、Feイオン選択性隔膜を用いない従来の
電解精製における結果を同表に示す。
``Industrial Application Field'' This invention relates to a chromium target for sputtering used in thin film formation. ``Conventional technology'' Traditionally, sputtering is used to form thin chrome films: (a) A thin chrome film is formed on plastic as a base and used for car dampers, handles, etc. (b) A thin chromium film is formed on only one side of a glass base and used as a mirror. (c) A thin chromium film is formed on only one side of a glass substrate, resist is applied, exposed, and etched, and this is used as a photomask. It is used for such things. "Problems to be Solved by the Invention" By the way, in the conventional sputtering method for forming a chromium thin film, the adhesion between the formed chromium thin film and the base is not satisfactory, so there is an under-layer between the base and the chromium thin film. In many cases, countermeasures such as interposing a thin film of nickel or silicon dioxide as a coating are taken, which increases the number of man-hours, and a solution to this problem has been desired. "Means for Solving the Problems" The present inventors have conducted extensive research to solve the above-mentioned conventional problems, and have come to the following findings. That is, as is well known, most conventional chromium targets use metallic chromium produced by the thermite method or electrolytic refining method as their raw material. Due to the manufacturing process, these metal chromium
Iron is inevitably mixed in, and its content is usually around 70 to 5000 ppm. It has also been found that this iron component reduces the adhesion of the chromium thin film to the base. Furthermore, this phenomenon occurs when the iron content exceeds 45 ppm, and it was found that if the iron content was kept below 45 ppm, the adhesion would not deteriorate and sufficient adhesion could be obtained. . In addition, such metal chromium includes Al, Pb,
Impurities such as Cu, Mn, and Mg are mixed in, but these impurities can be easily removed during the manufacturing process of metal chromium and kept to less than 10 ppm. It turned out that it was not causing a decline. This invention was made based on the above findings, and is characterized in that the iron content in the raw materials constituting the chromium target is adjusted to 0.5 to 45 ppm. Here, the reason why the iron content is set to 0.5 ppm or more is because it is economically difficult to adjust the iron content to 0.5 ppm or less. "Function" According to the above configuration, the adhesion of the chromium thin film can be easily improved without applying an undercoat between the base and the chromium thin film, and moreover, the cost does not increase. "Example" An example of the present invention will be described below. First, chromic acid (CrO 3 ) was electrolytically purified in a H 2 SO 4 bath. In this electrolytic refining, the electrolytic solution (H 2 SO 4 ) was circulated, and during the circulation, residues and impurities were removed using filtration and an Fe ion-selective diaphragm to repeatedly purify the electrolytic solution. The electrolysis conditions are as follows: CrO 3 concentration: 130g/, SO 2 - concentration: 3g/, cathode current density: 40A/cm 2 , electrolyte temperature: 80°C In electrolytic refining under these conditions, the electrolyte Metallic chromium with an iron content of 0.5 to 45 ppm was obtained by changing the amount of circulation. The results are shown in the table on the next page. The same table shows the results of conventional electrolytic refining that does not use an Fe ion-selective diaphragm.
【表】
上表から明らかなように、上記の条件で電解を
行うと、鉄の含有量が0.5〜45ppmの金属クロム
を得ることができる。
次に、上記のようにして得られた金属クロムを
洗浄、乾燥した後、スタンプミルにより粉砕し、
60メツシユ以下にふるい分けた。
そして、この60メツシユ以下の原料粉を、
SUS製の円筒状の缶に充填し、真空脱気後、こ
の缶を、1200℃、1000気圧の条件下で、熱間静水
圧プレス（HIP）処理により圧縮成形した。
その後、機械加工によりSUS缶を剥離除去し
て、この発明のスパツタリング用クロムターゲツ
トを得た。
このようにして得られたクロムターゲツトをス
パツタ装置に組み込み、次頁の表に示す下地にス
パツタさせ、クロム薄膜を形成し、各々の密着強
度を調べたところ、同表のようになつた。比較の
ために鉄の含有量が45ppm以上の従来の原料を使
つたクロムターゲツトについても同様にして密着
強度を調べた。
ここで、上記クロム薄膜の密着強度試験は、次
頁の表に示すような各下地に形成された各薄膜の
表面に、粘着性のテープを貼付し、これを引き剥
がすことにより行なつた。以下にその条件を示
す。
粘着性のテープとしては、住友スリーエム株
式会社製のスコツチテープ（商品名）を使用し
た。
テープの貼付、引き剥がしは次の手順で行な
つた。
イ まず、第１図および第２図に示すように、
薄膜１の表面に該薄膜１の外周縁の一部１ａ
を含んだ状態でテープ２を貼付する。この
際、テープ２は幅（Ｗ）25mm×長さ(L)50mmの
範囲を薄膜１に貼付し、かつ指でその範囲を
押圧する。この時の押圧力は約３Kg／cm2でと
する。
ロ 次に、第３図に示すように、テープ２の左
端部を把持して、該テープ２を上記外周縁の
一部１ａと対向する外周縁の一部１ｂ側に向
けて薄膜１の表面と平行な状態で引つ張るこ
とにより、薄膜１から完全に引き剥がす。テ
ープ２を引き剥がすときの速度は、約50cm／
ｓとする。
上記試験の結果を次頁の表に示す。評価の方法
は、引き剥がしたテープ２において、上記薄膜１
の表面に付着していた部分、すなわち幅（Ｗ）25
mm×長さ(L)50mmの範囲に、１mm×１mm以上の大き
さ（面積）の薄膜片が付着していた場合を「有」
として、薄膜１の下地３に対する密着強度が低い
ことを示し、一方、１mm×１mm未満の大きさ（面
積）の薄膜片が付着していた場合、または薄膜片
が全く付着していない場合を「無」として密着強
度が高いことを示すことにより行なつた。
表にみるように、本発明のクロムターゲツト
は、いずれも比較クロムターゲツトに比べ、優れ
た密着性を示した。
なお、Al、Pb、Cu、Mn、Mg等の不純物は、
本発明のクロムターゲツトおよび従来の比較クロ
ムターゲツトのいずれにおいても、ごく少量であ
り、しかも、本発明と従来とにおいて、鉄を含む
不純物の合計を比較した場合、例えば、鉄含有量
が45ppmである本発明のクロムターゲツトの鉄を
含んだ不純物の合計が67ppmであるのに対し、鉄
含有量が50ppmである従来のクロムターゲツトの
鉄を含んだ不純物の合計が61ppmであり、鉄を含
んだ不純物の合計は本発明のクロムターゲツトの
方が多いことから、上記密着性の向上が上記のよ
うなAl、Pb、Cu、Mn、Mg等の不純物を含めた
不純物全体の量の減少によるものではなく、鉄の
含有量に左右されることは明らかである。[Table] As is clear from the table above, when electrolysis is performed under the above conditions, metallic chromium with an iron content of 0.5 to 45 ppm can be obtained. Next, after washing and drying the metal chromium obtained in the above manner, it is crushed by a stamp mill.
It was sifted to 60 mesh or less. Then, this raw material powder of 60 mesh or less,
It was filled into a cylindrical can made of SUS, and after vacuum degassing, the can was compression molded by hot isostatic pressing (HIP) under conditions of 1200° C. and 1000 atm. Thereafter, the SUS can was peeled off by machining to obtain a chromium target for sputtering of the present invention. The chromium target thus obtained was installed in a sputtering device and sputtered onto the substrate shown in the table on the next page to form a chromium thin film.The adhesion strength of each was examined, and the results were as shown in the table. For comparison, the adhesion strength of a chromium target using conventional raw materials with an iron content of 45 ppm or more was also investigated in the same manner. Here, the adhesion strength test of the chromium thin film was conducted by applying adhesive tape to the surface of each thin film formed on each base as shown in the table on the next page and peeling it off. The conditions are shown below. As the adhesive tape, Scotch Tape (trade name) manufactured by Sumitomo 3M Limited was used. The tape was applied and peeled off in the following manner. B. First, as shown in Figures 1 and 2,
A part 1a of the outer periphery of the thin film 1 is formed on the surface of the thin film 1.
Tape 2 is applied in a state containing the . At this time, the tape 2 is applied to the thin film 1 in an area of width (W) 25 mm x length (L) 50 mm, and the area is pressed with a finger. The pressing force at this time is approximately 3 kg/cm 2 . (b) Next, as shown in FIG. 3, grasp the left end of the tape 2 and direct the tape 2 toward the outer peripheral edge part 1b opposite to the outer peripheral edge part 1a so that the surface of the thin film 1 It is completely peeled off from the thin film 1 by pulling it in a state parallel to . The speed when peeling off tape 2 is approximately 50cm/
Let it be s. The results of the above test are shown in the table on the next page. The evaluation method is that the thin film 1
The part that was attached to the surface of, that is, the width (W) 25
``Yes'' indicates that a thin film piece with a size (area) of 1 mm x 1 mm or more is attached within a range of mm x length (L) 50 mm.
This indicates that the adhesion strength of the thin film 1 to the substrate 3 is low, and on the other hand, when a thin film piece with a size (area) of less than 1 mm x 1 mm is attached, or when no thin film piece is attached at all, it is classified as " This was done by indicating that the adhesion strength was high by setting it as "no". As shown in the table, all of the chromium targets of the present invention exhibited superior adhesion compared to the comparative chromium targets. In addition, impurities such as Al, Pb, Cu, Mn, Mg, etc.
In both the chromium target of the present invention and the conventional comparative chromium target, the amount of impurities containing iron is very small, and when comparing the total impurities containing iron between the present invention and the conventional chromium target, for example, the iron content is 45 ppm. The total amount of iron-containing impurities in the chromium target of the present invention is 67 ppm, while the total amount of iron-containing impurities in the conventional chromium target, which has an iron content of 50 ppm, is 61 ppm. Since the total amount of , is clearly dependent on the iron content.
【表】
「発明の効果」
以上説明したように、この発明によれば、下地
とクロム薄膜との間にアンダーコートを施さなく
ても容易にクロム薄膜の密着性を向上させること
ができ、しかも、コスト高を招くこともない。[Table] "Effects of the Invention" As explained above, according to the present invention, it is possible to easily improve the adhesion of the chromium thin film without applying an undercoat between the base and the chromium thin film. , and does not result in high costs.
第１図ないし第３図はクロム薄膜の下地に対す
る密着強度を調べるためのテープの貼り付け、引
き剥がしの方法を説明するものであり、第１図は
薄膜にテープは貼付した状態を示す平面図、第２
図は同断面図、第３図はテープを引き剥がしてい
る状態を示す断面図である。
１……薄膜、２……テープ、３……下地。
Figures 1 to 3 explain the method of applying and peeling off the tape to examine the adhesion strength of the chrome thin film to the base, and Figure 1 is a plan view showing the state in which the tape is applied to the thin film. , second
This figure is a sectional view of the same, and FIG. 3 is a sectional view showing a state in which the tape is peeled off. 1... thin film, 2... tape, 3... base.
Claims (1)
タリング用クロムターゲツトにおいて、その組成
中に不可避的に含まれる鉄の含有量を0.5〜
45ppmに調整したことを特徴とするスパツタリン
グ用クロムターゲツト。1. In the sputtering chromium target used to form a chromium thin film, the iron content unavoidably included in the composition is reduced to 0.5~
A chrome target for sputtering that is adjusted to 45ppm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6160685A JPS61221361A (en) | 1985-03-26 | 1985-03-26 | Chromium target for sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6160685A JPS61221361A (en) | 1985-03-26 | 1985-03-26 | Chromium target for sputtering |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61221361A JPS61221361A (en) | 1986-10-01 |
| JPH0372709B2 true JPH0372709B2 (en) | 1991-11-19 |
Family
ID=13175989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6160685A Granted JPS61221361A (en) | 1985-03-26 | 1985-03-26 | Chromium target for sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61221361A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53114739A (en) * | 1977-03-18 | 1978-10-06 | Toyo Soda Mfg Co Ltd | Molding of metal for surface coating and their preparation |
-
1985
- 1985-03-26 JP JP6160685A patent/JPS61221361A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53114739A (en) * | 1977-03-18 | 1978-10-06 | Toyo Soda Mfg Co Ltd | Molding of metal for surface coating and their preparation |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61221361A (en) | 1986-10-01 |
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