JPS5850635A - Stamper and production thereof - Google Patents
Stamper and production thereofInfo
- Publication number
- JPS5850635A JPS5850635A JP14622081A JP14622081A JPS5850635A JP S5850635 A JPS5850635 A JP S5850635A JP 14622081 A JP14622081 A JP 14622081A JP 14622081 A JP14622081 A JP 14622081A JP S5850635 A JPS5850635 A JP S5850635A
- Authority
- JP
- Japan
- Prior art keywords
- film
- metal thin
- thin film
- plating
- stamper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 54
- 238000007747 plating Methods 0.000 claims abstract description 31
- 239000000853 adhesive Substances 0.000 claims abstract description 7
- 230000001070 adhesive effect Effects 0.000 claims abstract description 7
- 239000012790 adhesive layer Substances 0.000 claims abstract description 7
- 239000010409 thin film Substances 0.000 claims description 44
- 239000010408 film Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 16
- 238000007740 vapor deposition Methods 0.000 claims description 11
- 239000010410 layer Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 238000011081 inoculation Methods 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 30
- 229910052759 nickel Inorganic materials 0.000 abstract description 15
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052802 copper Inorganic materials 0.000 abstract description 8
- 239000010949 copper Substances 0.000 abstract description 8
- 239000011521 glass Substances 0.000 abstract description 6
- 238000005554 pickling Methods 0.000 abstract description 6
- 150000002739 metals Chemical class 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 6
- 229910000831 Steel Inorganic materials 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- 229910001369 Brass Inorganic materials 0.000 description 3
- 239000010951 brass Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000012779 reinforcing material Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229920003319 Araldite® Polymers 0.000 description 1
- 244000175448 Citrus madurensis Species 0.000 description 1
- 235000017317 Fortunella Nutrition 0.000 description 1
- 206010017577 Gait disturbance Diseases 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical group [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- -1 etc. Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B23/00—Record carriers not specific to the method of recording or reproducing; Accessories, e.g. containers, specially adapted for co-operation with the recording or reproducing apparatus ; Intermediate mediums; Apparatus or processes specially adapted for their manufacture
- G11B23/0057—Intermediate mediums, i.e. mediums provided with an information structure not specific to the method of reproducing or duplication such as matrixes for mechanical pressing of an information structure ; record carriers having a relief information structure provided with or included in layers not specific for a single reproducing method; apparatus or processes specially adapted for their manufacture
Landscapes
- Moulds For Moulding Plastics Or The Like (AREA)
- Casting Or Compression Moulding Of Plastics Or The Like (AREA)
- Manufacturing Optical Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は光ディスク、ビデオディスク等の製造に使用す
るスタンパとその製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a stamper used for manufacturing optical discs, video discs, etc., and a method for manufacturing the stamper.
従来、光ディスク、ビデオディスクの製造に使用するス
タンパは、第１図（ａｌ〜Ｔｅｌに示す方法により製造
されていた。すなわち、第１図（ａｔのようにガラス原
盤１にホトレジストを塗布してホトレジスト膜２とし、
第１図（ｂｌのように通常のホトプロセスによシ所定形
状のパターン３を形成する０次に第１図（Ｑｌのように
蒸着法等の手段によってニッケル等の金属薄膜４を形成
する。ついでＪＩＥＩ図Ｆｄｌに示すようにこの金属薄
Ｍ４を導電膜として、通常の電気めっき法によってニッ
ケルめっき膜等のめっきＭＩｓを形成する。めっき後第
１図（ｅ＋に示すように金属薄膜４とホトレジスト２の
界面で剥離することによシ、ホトレジストに形成したノ
くターンを反転したパターンを有するスタンパが得られ
る。Conventionally, stampers used for manufacturing optical disks and video disks have been manufactured by the method shown in FIG. 1 (al to Tel). That is, as shown in FIG. As film 2,
As shown in FIG. 1 (BL), a pattern 3 of a predetermined shape is formed by a normal photo process. Next, as shown in FIG. Next, as shown in JIEI diagram Fdl, a plating MIs such as a nickel plating film is formed using the metal thin M4 as a conductive film by a normal electroplating method.After plating, as shown in FIG. By peeling off at the interface of 2, a stamper having a pattern that is an inversion of the notches formed in the photoresist can be obtained.
金柑薄膜４は、スタンパのスタンピング面として使用さ
れるため、硬度および耐磨耗性を要求される。そのため
金属薄膜４には、ニッケル、クロム、タンタル等の金属
が用いられるが、これらの金属薄膜はその表面が極めて
酸化されやすい性質を有している。その次め、蒸着等の
気相成長装置から取出したとき、金属薄膜の表面が空気
中の酸素により容墨に酸化され酸化膜で被れてしまう。Since the kumquat thin film 4 is used as a stamping surface of a stamper, it is required to have hardness and abrasion resistance. For this reason, metals such as nickel, chromium, and tantalum are used for the metal thin film 4, but these metal thin films have a property that their surfaces are extremely easily oxidized. Next, when the metal thin film is removed from a vapor phase growth apparatus such as a vapor deposition apparatus, the surface of the metal thin film is extensively oxidized by oxygen in the air and is covered with an oxide film.
上記金属の酸化膜は強固かつ緻密である念め、通常の酸
洗等の手段では溶解除去することはできない、このため
酸化膜の形成され次金属薄膜上にめっき膜を形成すると
、めっき膜は金属薄膜と十分接着せず、接着力は数Ｋｇ
／ｃｍ’ ＋Ｎａ度にすぎない。The oxide film of the above-mentioned metals is strong and dense, and cannot be dissolved and removed by ordinary methods such as pickling. Therefore, when a plating film is formed on the metal thin film after the oxide film is formed, the plating film is Does not adhere well to metal thin film, adhesive strength is several kg
/cm'+Na degree.
このようにめっき膜と金属薄膜との接着力が小さいと、
金属薄ｊｌ［Ｆｉ一般に数１０００λ程度の薄い膜であ
るため、スタンピング時に容異にめっき膜から剥離して
しまいスタンパの寿命は著しく短いものとなる。 ｔｔ
、接着力が極端に小さいときけ、金属薄膜とホトレジス
トの界面での剥離を行なう工程で金属薄膜がめつき膜か
ら剥れてし甘い、スタンパを製造できなくなってしオう
。If the adhesive force between the plating film and the metal thin film is small in this way,
Since the metal thin film is generally about several thousand λ, it peels off from the plating film during stamping, and the life of the stamper becomes extremely short. tt
If the adhesive strength is extremely low, the metal thin film will peel off from the plating film during the peeling process at the interface between the metal thin film and the photoresist, making it impossible to manufacture a stamper.
本発明の目的は、上記（２次従来技術の欠点をな。The object of the present invention is to overcome the drawbacks of the secondary prior art.
くし、寿命の長いスタンパとその製造方法を提供するに
ある。The purpose of the present invention is to provide a comb, a long-life stamper, and a method for manufacturing the same.
本発明によるスタンパは、蒸着等の気相成長法で形成し
次所定形状のパターンを有する第１の金属薄膜とめっき
膜との間に、第１の金属薄膜と同一の気相成長装置で形
成した接着層となる第２の金属薄膜を設けることによシ
スタンパを構成する金属膜間の接着力を向上せしめ、寿
命の長い本のとし次ことに特徴がある。The stamper according to the present invention is formed by a vapor growth method such as vapor deposition, and then formed between a first metal thin film having a pattern of a predetermined shape and a plating film using the same vapor growth apparatus as the first metal thin film. By providing a second metal thin film that serves as an adhesive layer, the adhesion between the metal films constituting the resistor is improved, resulting in a book with a long life.
接着層となる第２の金属薄膜としては、空気中で酸化膜
の形成されにくい金属もしくけ酸化族が形成されても酸
洗等の手段で容易に除去できる金属であれば特に制限は
なく、例えば金、銀、鋼、亜鉛、スズ、鉛などがある。The second metal thin film serving as the adhesive layer is not particularly limited as long as it is a metal that is difficult to form an oxide film in the air or a metal that can be easily removed by pickling or the like even if a silicate group is formed. Examples include gold, silver, steel, zinc, tin, and lead.
ま次第２の金属薄膜の厚さは０．０１〜１０μｍがよい
。０．０１）ｔｒｎ以下では第２の金属薄膜が完全な膜
として形成されずま皮めっき前の酸洗工程でその大部分
が溶解除去されてしまい接着層としての効果を失ってし
まう。The thickness of the second metal thin film is preferably 0.01 to 10 μm. If the second metal thin film is less than 0.01) trn, the second metal thin film will not be formed as a complete film and most of it will be dissolved and removed in the pickling process before plating, and it will lose its effectiveness as an adhesive layer.
また１０μｍ以上の厚さでは、上記の第２の金属薄膜は
歌い金属である之め、＃！１の金属薄膜に形成したパタ
ーンを変形させ、′！逢スタンバ面に微小なうねりを生
じ好ましくない。Moreover, at a thickness of 10 μm or more, the second metal thin film described above is a singing metal. By deforming the pattern formed on the metal thin film of 1,'! This is undesirable as it causes minute undulations on the stumbling surface.
本発明のスタンパを製造する方法を以下実施例（ユ従い
詳述する。The method for manufacturing the stamper of the present invention will be described in detail in accordance with Examples below.
実施例
第２図ｆａｌ〜（ｆｌは、本発明のスタンパの製造方法
を示すスタンパの断面図である。厚さ５ ｍｍ、直径３
００ｍｍのガラス原盤１にホトレジスト膜２を形成した
。ホトレジストは例えばＡＺ１３５０ （シップレイ社
）で、厚さは０．１〜１．０μｍである。つぎに寓光、
現像によりホトレジスト膜２にノくターンを形成する。Embodiment 2 FIG.
A photoresist film 2 was formed on a 00 mm glass master disk 1. The photoresist is, for example, AZ1350 (manufactured by Shipley) and has a thickness of 0.1 to 1.0 μm. Next, Gekko,
A notch turn is formed in the photoresist film 2 by development.
ついでパターン３を形成し急ホトレジスト膜２上に蒸着
によりニッケルによる第１の金属薄膜６を形成する。ニ
ッケルによる第１の金属薄膜の厚さは０．０５〜１．０
μｍが適しておシ、さらに好ましくは０．１〜０．３μ
ｍがよい。蒸着時には蒸着膜内の内部応力を減少させる
ため、ガラス原盤１を蒸着装置内で８０〜１５０’Ｃに
予め加熱することは効果的である。オ友蒸着後８０〜１
５０＠Ｃでアニールすることも効果がある。第１の金属
薄膜としてはニッケルに限ることはなくクロム、タンタ
ル、チタン、コバルト等の硬い金属であれば制限はない
。Next, a pattern 3 is formed, and a first metal thin film 6 of nickel is formed on the rapid photoresist film 2 by vapor deposition. The thickness of the first metal thin film made of nickel is 0.05 to 1.0
μm is suitable, more preferably 0.1 to 0.3 μm.
m is good. During vapor deposition, it is effective to preheat the glass master 1 to 80 to 150'C in the vapor deposition apparatus in order to reduce internal stress within the vapor deposited film. 80-1 after Oyu vapor deposition
Annealing at 50@C is also effective. The first metal thin film is not limited to nickel, and is not limited to any hard metal such as chromium, tantalum, titanium, cobalt, or the like.
゛つぎに、ニッケル蒸着を行なった同一の蒸着装置内で
、引続いて銅蒸着を行ない、第１の金属薄膜６上に鋼に
よる第２の金属薄膜７を形成する。``Next, in the same vapor deposition apparatus that carried out the nickel vapor deposition, copper vapor deposition is subsequently performed to form a second metal thin film 7 made of steel on the first metal thin film 6.
銅膜の厚さは０．０１〜１０μｍがよく、さらに好オし
く ／ｄ ｏ、ｏ ５〜０．５μｍである。このように
二ｙケル蒸着に続けて、同一の蒸着装置内で銅蒸着を行
なえばニッケル蒸着膜表面には酸化ニッケルの膜が形成
されずに銅膜が形成されるため、両者の接着力は１ＱＯ
Ｋｇ１０Ｉｌ、２程度と大きい。The thickness of the copper film is preferably 0.01 to 10 μm, more preferably 5 to 0.5 μm. In this way, if copper evaporation is performed in the same evaporation apparatus following 2K evaporation, a copper film will be formed on the surface of the nickel evaporation film instead of a nickel oxide film, so the adhesive strength between the two will be reduced. 1QO
It is large, about 10 Il, 2 kg.
つぎに硝酸水溶液で酸洗を行ない銅膜表面上に形成され
皮酸化Ｊ［を溶解除去する。酸洗液は、例えば硫酸、塩
酸水溶液がよ＜ａ度は１〜１０チがよい、液温は１５〜
３０＠Ｃが適している。つぎに接着層である第２の金属
薄１［７の銅膜と第１の金属薄膜６であるニッケル膜を
導電膜として電気めっきを行ないめっき膜８を形成する
。めっき膜８はニッケル、銅、真ちゅう等の膜が適して
お夛、またそれらの２種類以上被合した複合膜としても
よい。Next, pickling is performed with an aqueous nitric acid solution to dissolve and remove the skin oxidation J formed on the surface of the copper film. The pickling solution is, for example, a sulfuric acid or hydrochloric acid aqueous solution, preferably with a degree of 1 to 10 degrees, and a liquid temperature of 15 to 10 degrees.
30@C is suitable. Next, electroplating is performed using the copper film of the second metal thin film 1 [7, which is the adhesive layer, and the nickel film, which is the first metal thin film 6, as conductive films] to form a plated film 8. The plating film 8 may suitably be made of nickel, copper, brass, or the like, or may be a composite film of two or more of these materials.
めっきＭをニッケル膜としたときのめっき条件は、例エ
バスルファずン酸ニッケル２００ｇ／ｌ、スルファミン
酸１ｏｏｇ７ｚ、塩化ニッケル１０ ｇ４ 、ホウ酸３
０ ｇ／ｉ から成るスル７アオン酸ニツケルめっき液
で、液温３０°Ｃ１電流密度０．１〜５Ａ／ｄｍ２、め
１き時間約１００分である。１之めつき膜８の厚さは５
０〜５００μｍが適しておシ、先に記し念ようにニッケ
ル鋼、真ちゅう等の単一膜としてもそれらの僚合膜とし
てもよい。つぎにホトレジスト膜２とニッケル蒸着層の
＃！１の金属薄１１６との界面で剥離し、ホトレジスト
ｊ［２に形放し次パターン３を反転したパターン９を有
するスタンノくを得次。When plating M is a nickel film, the plating conditions are, for example, nickel evasulfazunate 200g/l, sulfamic acid 10og7z, nickel chloride 10g4, boric acid 3
The plating solution was made using a sulf7aonic acid nickel plating solution consisting of 0 g/i, a solution temperature of 30° C., a current density of 0.1 to 5 A/dm2, and a plating time of about 100 minutes. The thickness of the plating film 8 is 5.
A thickness of 0 to 500 .mu.m is suitable.As previously mentioned, it may be a single film made of nickel steel, brass, etc., or a composite film of these materials. Next, #! of the photoresist film 2 and the nickel vapor deposition layer! 1 was peeled off at the interface with the metal thin layer 116, and the photoresist layer 2 was released, and a pattern 9 having pattern 9, which was the inversion of pattern 3, was obtained.
本方法で形成し逢スタンパの各金属Ｍ間の接着力は１０
０ Ｋｇ７４２以上の大きなｆＥを有したものである。The adhesive force between each metal M of the stamper formed by this method is 10
It has a large fE of 0 Kg742 or more.
本爽施例ではめっきＪ［８を形成し次後、剥離を行ない
スタンパを形成したが、めつきＭを形成した後、裏打ち
材で補強し念後、剥離してもｊｌ、ｑ。In this example, a stamper was formed by forming plating J[8 and then peeling it off. However, even if plating M was formed, it was reinforced with a backing material, and then peeled off after that, jl, q.
補強材としてはアルミニウム、鋼、鉄、真ちゅう等の板
が適している。また補強材は例えばセメダイン、アラル
ダイト等のエポキシ系接着剤でめつき膜８と接着する。As the reinforcing material, plates made of aluminum, steel, iron, brass, etc. are suitable. Further, the reinforcing material is bonded to the plating film 8 using an epoxy adhesive such as Cemedine or Araldite.
″
ま九本例ではガラス原盤から直接スタンノくを製造する
方法について説明したが、ガラス原盤からマスクを作シ
、ついでマザーを作シ、ついでスタンパを作る方法にお
けるマスクの製造方法についても適用できること＃ｉ言
うまでもない。``In this example, we explained the method of manufacturing stamps directly from the glass master, but it can also be applied to the method of manufacturing masks in the method of making a mask from the glass master, then making a mother, and then making a stamper.# i Needless to say.
本発明により、従来数にレース程度にすぎなかつ次スタ
ンパを構成する金Ｊｌ膜間の接着力を１００Ｋｇ／ｃｍ
２以上に向上できた。これによシスタンピング時の第１
の金属薄膜の剥離がなくなり、極めて寿命の長いスタン
パを製造することができ次、また、接着層である第２の
金属薄Ｍを設けることによシ、第２の金属薄膜が第１の
金属薄膜にくらべて電気伝導率が大きいことから、めっ
き開始時からめっき厚が１μｍ程度に成長するまでの電
流密度を０．０５ ＡＩ、３□２から０．５ ’／ｄｍ
’に上昇させることが可能となシ、めっき時間を約２時
間短縮することができ次。さらに第１および第２の金属
薄膜の電気抵抗が小さい念め、通電部であるガラス原盤
の中心から周辺部までの抵抗値が小さくなり、従来にく
らべてめっき膜の均一性を向上させることができた。According to the present invention, the adhesion force between the gold JL films constituting the next stamper has been increased to 100 kg/cm, which is only a lace compared to the conventional number.
I was able to improve it to 2 or more. This allows the first step when stamping the system.
This eliminates the peeling of the metal thin film, making it possible to manufacture a stamper with an extremely long life.In addition, by providing the second metal thin M as an adhesive layer, the second metal thin film is bonded to the first metal thin film. Since the electrical conductivity is higher than that of a thin film, the current density from the start of plating until the plating thickness grows to about 1 μm is set at 0.05 AI, 3□2 to 0.5'/dm.
'The plating time can be shortened by about 2 hours. Furthermore, since the electrical resistance of the first and second metal thin films is small, the resistance value from the center to the periphery of the glass master plate, which is the current-carrying part, is small, which improves the uniformity of the plating film compared to conventional methods. did it.
第１図のｔａｌ〜ｔｏ＋は、従来のスタンノくを製造す
る・方法を示す図、第２図の（ａｌ〜Ｔｒｉは本発明の
スタンパを製造する方法を示す図である。
１ ガラス原盤
２、 ホトレジスト膜
五 パターン
歳 金属薄膜
５ めっき膜
６、 第１の金属薄膜
ｌ 第２の金属薄膜
ａ めっき膜
賃 反転したパターン
グ／ 図 ケ２図
手続補正書（自発）
・ｉｔ ｆ’ｌの人生
昭和 ５６ りＩ 特許願第 １４６２２０ シＪ。
発明の名称 スタンパとその製造方法補正をする者
′・□′孟；”・二・： ＋＋ ：ｌ 製 作 所
７＋ ′ ″ １１１゛勝 茂
代 理 人
捕ＩＩ：、の内容
１ 明細書第２頁、第１４行目の「金円薄膜４」を「金
属薄膜４」に訂正する。
２ 明１１１１Ｉ書第６頁、第８行目の「硝酸水溶液」
を「硫酸水浴液」に訂正する。In FIG. 1, tal to to+ are diagrams showing a conventional method for manufacturing a stamper, and in FIG. 2, (al to Tri are diagrams showing a method for manufacturing a stamper of the present invention. Photoresist film 5 Pattern year Metal thin film 5 Plating film 6, 1st metal thin film l 2nd metal thin film a Plating film thickness Reversed pattern / Figure ke 2 Procedural amendment (self-motivated) ・it f'l's life Showa 56 ri I Patent Application No. 146220 shi J. Name of the invention Stamper and the person who corrects its manufacturing method'・□'Meng;"・2.: ++ :l Manufacturer 7+'" 111゛Katsu Shigeyo Osamu Hitori II: , Contents 1 "Gold circle thin film 4" on page 2, line 14 of the specification is corrected to "metal thin film 4". 2 "Nitric acid aqueous solution" on page 6, line 8 of Mei 1111I
is corrected to "sulfuric acid bath solution."
Claims (1)
接着層となる第２の金属薄膜と、めっき膜とから成るこ
とを特徴としたスタンパ。 ２ 所定形状のパターンを形成した原盤に蒸着法等の気
相成長法によって第１の金属薄膜を形成し、該金属薄膜
に同様の気相成長法によって接着材となる第２の金属薄
膜を形成し、つｂで電気めっき法によってめっき展を形
成し、必要に応じて裏打材を接着した接菌１の金属薄膜
と原盤との界面から剥離してなることを特徴とするスタ
ンパの製造方法。[Claims] 1. A first metal thin film having a pattern of a predetermined shape;
A stamper comprising a second metal thin film serving as an adhesive layer and a plating film. 2. A first metal thin film is formed on the master disk on which a pattern of a predetermined shape is formed by a vapor phase growth method such as a vapor deposition method, and a second metal thin film to serve as an adhesive is formed on the metal thin film by a similar vapor phase growth method. A method for manufacturing a stamper, characterized in that in step b, a plating layer is formed by electroplating, and if necessary, the metal thin film of inoculation 1, to which a backing material is adhered, is peeled off from the interface between the master and the metal thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14622081A JPS5850635A (en) | 1981-09-18 | 1981-09-18 | Stamper and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14622081A JPS5850635A (en) | 1981-09-18 | 1981-09-18 | Stamper and production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5850635A true JPS5850635A (en) | 1983-03-25 |
Family
ID=15402820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14622081A Pending JPS5850635A (en) | 1981-09-18 | 1981-09-18 | Stamper and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5850635A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5956307A (en) * | 1982-09-24 | 1984-03-31 | 東芝ライテック株式会社 | Illuminator |
| JPS59177742A (en) * | 1983-03-29 | 1984-10-08 | Toshiba Corp | Mold for duplication of information recording carrier and its production |
| JPS59193560A (en) * | 1983-04-19 | 1984-11-02 | Daicel Chem Ind Ltd | Stamper for rotary recording medium and its manufacture |
| EP0395395A2 (en) * | 1989-04-26 | 1990-10-31 | Canon Kabushiki Kaisha | Roll stamper for molding substrate used for optical recording medium, process for preparing same, and process for preparing optical recording medium making use of it |
| US5489082A (en) * | 1987-12-28 | 1996-02-06 | Canon Kabushiki Kaisha | Reproducible molding die having a removable cleaning layer |
-
1981
- 1981-09-18 JP JP14622081A patent/JPS5850635A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5956307A (en) * | 1982-09-24 | 1984-03-31 | 東芝ライテック株式会社 | Illuminator |
| JPS59177742A (en) * | 1983-03-29 | 1984-10-08 | Toshiba Corp | Mold for duplication of information recording carrier and its production |
| JPS59193560A (en) * | 1983-04-19 | 1984-11-02 | Daicel Chem Ind Ltd | Stamper for rotary recording medium and its manufacture |
| US5489082A (en) * | 1987-12-28 | 1996-02-06 | Canon Kabushiki Kaisha | Reproducible molding die having a removable cleaning layer |
| EP0395395A2 (en) * | 1989-04-26 | 1990-10-31 | Canon Kabushiki Kaisha | Roll stamper for molding substrate used for optical recording medium, process for preparing same, and process for preparing optical recording medium making use of it |
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