JPH0371795B2 - - Google Patents
Info
- Publication number
- JPH0371795B2 JPH0371795B2 JP57224324A JP22432482A JPH0371795B2 JP H0371795 B2 JPH0371795 B2 JP H0371795B2 JP 57224324 A JP57224324 A JP 57224324A JP 22432482 A JP22432482 A JP 22432482A JP H0371795 B2 JPH0371795 B2 JP H0371795B2
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- sio
- magnetic sensor
- resin
- ferromagnetic thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 29
- 230000001681 protective effect Effects 0.000 claims description 28
- 230000005291 magnetic effect Effects 0.000 claims description 19
- 239000011347 resin Substances 0.000 claims description 17
- 229920005989 resin Polymers 0.000 claims description 17
- 230000005294 ferromagnetic effect Effects 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims 1
- 238000007738 vacuum evaporation Methods 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は磁気センサの製造方法に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method of manufacturing a magnetic sensor.
従来例の構成とその問題点
従来の磁気センサは第１図に示すように、ガラ
ス基台１の中央に強磁性薄膜抵抗体２が設けら
れ、その抵抗体２の両端に端子部３が取付けてあ
る。そして端子部３にはリード線４が接続されて
いる。Configuration of conventional example and its problems As shown in Fig. 1, a conventional magnetic sensor has a ferromagnetic thin film resistor 2 provided in the center of a glass base 1, and terminals 3 are attached to both ends of the resistor 2. There is. A lead wire 4 is connected to the terminal portion 3.
この構成で、ガラス基台１の上には、下地処理
用の樹脂層５と本塗用の樹脂層６が塗布されてい
る。 With this configuration, a resin layer 5 for base treatment and a resin layer 6 for main coating are applied on the glass base 1.
このように従来の磁気センサは、保護膜として
樹脂層５，６からなる多層樹脂層が用いられ、成
型品の場合を除いては、例えば二液性熱硬化型樹
脂等では、耐久性を高めるために、厳密な加工条
件の管理が必要であつた。また樹脂層５，６の耐
久性を一定以上に保つには、樹脂層５，６の膜厚
を十分とる必要があり、強磁性薄膜抵抗体２が被
検体（図示しない）から遠ざかに、出力の低下が
避けられなかつた。 In this way, in conventional magnetic sensors, a multilayer resin layer consisting of resin layers 5 and 6 is used as a protective film. Therefore, strict control of processing conditions was necessary. In addition, in order to maintain the durability of the resin layers 5 and 6 above a certain level, it is necessary to ensure that the resin layers 5 and 6 are sufficiently thick, and the ferromagnetic thin film resistor 2 is moved away from the test object (not shown) and output. A decline in the numbers was unavoidable.
発明の目的
本発明は上記欠点に鑑み、薄くしかも耐久性に
優れた保護膜を有する磁気センサの製造方法を提
供するものである。OBJECTS OF THE INVENTION In view of the above drawbacks, the present invention provides a method for manufacturing a magnetic sensor having a thin and highly durable protective film.
発明の構成
上記目的を達成するために本発明は、ガラス基
台上に端子部を有する強磁性薄膜抵抗体を固定
し、その強磁性薄膜抵抗体の上面全てと上記端子
部の一部とに膜厚5μm以上のSiOまたはSiO2の真
空蒸着による保護膜を被着し、かつ上記端子部の
リード線が接続される部分と上記保護膜の一部と
を樹脂で覆うものである。Structure of the Invention In order to achieve the above object, the present invention fixes a ferromagnetic thin film resistor having a terminal portion on a glass base, and fixes the ferromagnetic thin film resistor having a terminal portion on the entire upper surface of the ferromagnetic thin film resistor and a part of the terminal portion. A protective film of SiO or SiO 2 with a thickness of 5 μm or more is applied by vacuum evaporation, and the portion of the terminal portion to which the lead wire is connected and a part of the protective film are covered with resin.
保護膜にSiOまたはSiO2を用いることにより耐
久性が増し、保護膜の膜厚が5μm以上であること
により、強磁性薄膜抵抗体が被検体から遠ざかる
ことがなく、出力の低下を防ぐことができる。 Durability is increased by using SiO or SiO 2 for the protective film, and the thickness of the protective film is 5 μm or more, which prevents the ferromagnetic thin film resistor from moving away from the test object and prevents a drop in output. can.
実施例の説明
以下本発明の一実施例における磁気センサの製
造方法について図面とともに説明する。DESCRIPTION OF EMBODIMENTS A method of manufacturing a magnetic sensor according to an embodiment of the present invention will be described below with reference to the drawings.
第２図は本発明の一実施例の製造方法により得
られた磁気センサの断面図である。 FIG. 2 is a sectional view of a magnetic sensor obtained by a manufacturing method according to an embodiment of the present invention.
第２図において、ガラス基台１と強磁性薄膜抵
抗体２と端子部３とリード線４との構成は、従来
の磁気センサと同じ構成であるが、強磁性薄膜抵
抗体２の上面全てと、端子部３の一部はSiOまた
はSiO2の真空蒸着による保護膜７が被着されて
いる。また端子部３とリード線４と保護膜７の周
囲は、樹脂８によつて覆われている。 In FIG. 2, the structure of the glass base 1, ferromagnetic thin film resistor 2, terminal section 3, and lead wire 4 is the same as that of the conventional magnetic sensor, but the entire upper surface of the ferromagnetic thin film resistor 2 is A protective film 7 of SiO or SiO 2 is deposited on a part of the terminal portion 3 by vacuum evaporation. Further, the periphery of the terminal portion 3, lead wire 4, and protective film 7 is covered with resin 8.
真空蒸着による保護膜７の耐久性は、第３図に
示すように3μm以下の場合に比べて、5μm以上に
なると大きく向上する。 As shown in FIG. 3, the durability of the protective film 7 formed by vacuum deposition is greatly improved when the thickness is 5 μm or more, compared to when the thickness is 3 μm or less.
また第４図に示すように、従来の磁気センサに
用いられた樹脂保護膜（特性Ａ）およびAl2O3保
護膜（特性Ｂ）、SiO保護膜（特性Ｃ）に比べて、
本実施例において真空蒸着による保護膜７に用い
るSiO2保護膜（特性Ｄ）およびSiO保護膜（特性
Ｅ）は耐久性に優れている。 Furthermore, as shown in Figure 4, compared to the resin protective film (characteristic A), Al 2 O 3 protective film (characteristic B), and SiO protective film (characteristic C) used in conventional magnetic sensors,
In this example, the SiO 2 protective film (characteristic D) and the SiO protective film (characteristic E) used as the protective film 7 by vacuum deposition have excellent durability.
さらに第２図に示す本実施例における磁気セン
サは、端子部３を樹脂８で覆うので、この樹脂８
の品質のばらつきをなくすために、第５図に示す
ようにSiOまたはSiO2の保護膜７と樹脂８との結
合を助ける有機シラン系結合材９を保護膜７と樹
脂８との間に塗布している。 Furthermore, since the magnetic sensor in this embodiment shown in FIG. 2 covers the terminal portion 3 with the resin 8, the resin 8
In order to eliminate variations in quality, as shown in FIG. 5, an organic silane binder 9 is applied between the protective film 7 and the resin 8 to help bond the SiO or SiO 2 protective film 7 and the resin 8. are doing.
このようにSiO保護膜７にシラン系結合材９が
塗布されたものは、第４図の曲線Ｆに示すように
より耐久性が向上する。 When the SiO protective film 7 is coated with the silane binder 9 in this manner, the durability is improved as shown by the curve F in FIG.
なお磁気センサが小型化された場合に端子部３
のみに樹脂８を塗布することは困難となるので、
第６図のように磁気センサ全体にシラン系結合樹
脂９を塗布し、全体に樹脂層８をデイツプにより
形成することも可能である。 Note that when the magnetic sensor is miniaturized, the terminal part 3
Since it is difficult to apply resin 8 only to
As shown in FIG. 6, it is also possible to apply a silane-based bonding resin 9 to the entire magnetic sensor and form a resin layer 8 on the entire surface using a dip.
なお本発明の各実施例において保護膜７を真空
蒸着で設けたのは、数μmの保護膜７を均一に設
け、センサの精度を向上させるためである。また
保護膜７は100μmより厚くなると真空蒸着で設け
た場合も、他の方法で設けた場合もほとんど差異
がなくなるため、保護膜７を100μmより厚くする
場合は真空蒸着で設ける必要はない。 The reason why the protective film 7 is provided by vacuum deposition in each embodiment of the present invention is to uniformly provide the protective film 7 with a thickness of several μm and improve the accuracy of the sensor. Further, when the protective film 7 becomes thicker than 100 μm, there is almost no difference whether it is formed by vacuum evaporation or by other methods, so when the protective film 7 is made thicker than 100 μm, it is not necessary to provide it by vacuum evaporation.
発明の効果
以上のように本発明は強磁性薄膜の検出部全て
と端子部とを、膜厚5μm以上のSiOまたはSiO2か
らなる保護膜で覆うことにより、耐久性が増し、
しかも強磁性薄膜抵抗体が被検体から遠ざかるこ
とがないので出力の低下を防ぐことができる。Effects of the Invention As described above, the present invention increases durability by covering all the detection parts and terminal parts of the ferromagnetic thin film with a protective film made of SiO or SiO 2 with a film thickness of 5 μm or more.
Moreover, since the ferromagnetic thin film resistor does not move away from the subject, a decrease in output can be prevented.
第１図は従来の磁気センサの断面図、第２図は
本発明の第１の実施例における磁気センサの断面
図、第３図は同磁気センサの保護膜の膜厚と耐久
時間の関係を示す特性図、第４図は同磁気センサ
および従来の磁気センサに用いられる保護膜の材
質による耐久時間と良品率との関係を示す特性
図、第５図は本発明の第２の実施例における磁気
センサの断面図、第６図は本発明の第３の実施例
における磁気センサの断面図である。
１……ガラス基台、２……強磁性抵抗体、３…
…端子部、７……保護膜、９……結合材。
Fig. 1 is a cross-sectional view of a conventional magnetic sensor, Fig. 2 is a cross-sectional view of a magnetic sensor according to the first embodiment of the present invention, and Fig. 3 shows the relationship between the thickness of the protective film and the durability time of the same magnetic sensor. FIG. 4 is a characteristic diagram showing the relationship between durability time and non-defective rate depending on the material of the protective film used in the same magnetic sensor and a conventional magnetic sensor, and FIG. Cross-sectional view of magnetic sensor FIG. 6 is a cross-sectional view of a magnetic sensor in a third embodiment of the present invention. 1...Glass base, 2...Ferromagnetic resistor, 3...
...Terminal part, 7...Protective film, 9...Binding material.
Claims (1)
抗体を固定し、その強磁性薄膜抵抗体の上面全て
と上記端子部の一部とに膜厚5μm以上のSiOまた
はSiO2の真空蒸着による保護膜を被着し、かつ
上記端子部のリード線が接続される部分と上記保
護膜の一部とを樹脂で覆う磁気センサの製造方
法。1. A ferromagnetic thin film resistor having a terminal part is fixed on a glass base, and SiO or SiO 2 with a thickness of 5 μm or more is vacuum deposited on the entire upper surface of the ferromagnetic thin film resistor and a part of the terminal part. A method of manufacturing a magnetic sensor, comprising: depositing a protective film, and covering with resin a portion of the terminal portion to which a lead wire is connected and a part of the protective film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57224324A JPS59113675A (en) | 1982-12-20 | 1982-12-20 | Magnetic sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57224324A JPS59113675A (en) | 1982-12-20 | 1982-12-20 | Magnetic sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59113675A JPS59113675A (en) | 1984-06-30 |
| JPH0371795B2 true JPH0371795B2 (en) | 1991-11-14 |
Family
ID=16811963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57224324A Granted JPS59113675A (en) | 1982-12-20 | 1982-12-20 | Magnetic sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59113675A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6171666A (en) * | 1984-09-14 | 1986-04-12 | Asahi Kasei Denshi Kk | Thin hall element |
| JPH0438485A (en) * | 1990-06-01 | 1992-02-07 | Matsushita Electric Ind Co Ltd | Magnetic sensor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5795687A (en) * | 1980-12-05 | 1982-06-14 | Hitachi Ltd | Magnetic resistance element |
-
1982
- 1982-12-20 JP JP57224324A patent/JPS59113675A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5795687A (en) * | 1980-12-05 | 1982-06-14 | Hitachi Ltd | Magnetic resistance element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59113675A (en) | 1984-06-30 |
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