JPH0371788B2 - - Google Patents
Info
- Publication number
- JPH0371788B2 JPH0371788B2 JP56070698A JP7069881A JPH0371788B2 JP H0371788 B2 JPH0371788 B2 JP H0371788B2 JP 56070698 A JP56070698 A JP 56070698A JP 7069881 A JP7069881 A JP 7069881A JP H0371788 B2 JPH0371788 B2 JP H0371788B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- cell
- integrated circuit
- cell rows
- circuit device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 7
- 239000000463 material Substances 0.000 claims 2
- 238000003491 array Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
- H01L27/11807—CMOS gate arrays
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56070698A JPS57186350A (en) | 1981-05-13 | 1981-05-13 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56070698A JPS57186350A (en) | 1981-05-13 | 1981-05-13 | Semiconductor integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57186350A JPS57186350A (en) | 1982-11-16 |
| JPH0371788B2 true JPH0371788B2 (ko) | 1991-11-14 |
Family
ID=13439092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56070698A Granted JPS57186350A (en) | 1981-05-13 | 1981-05-13 | Semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57186350A (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0691224B2 (ja) * | 1983-01-24 | 1994-11-14 | 株式会社日立製作所 | マスタスライス方式の半導体集積回路装置 |
| EP0495990A4 (en) * | 1990-08-10 | 1993-05-05 | Seiko Epson Corporation | Semiconductor device |
| WO2003001591A1 (fr) * | 2001-06-25 | 2003-01-03 | Hitachi, Ltd | Circuit integre semiconducteur, procede et systeme de fabrication de ce dernier |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5125085A (ja) * | 1974-06-26 | 1976-03-01 | Ibm | Bureenahandotaishusekikairochitsupukozo |
-
1981
- 1981-05-13 JP JP56070698A patent/JPS57186350A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5125085A (ja) * | 1974-06-26 | 1976-03-01 | Ibm | Bureenahandotaishusekikairochitsupukozo |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57186350A (en) | 1982-11-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6271548B1 (en) | Master slice LSI and layout method for the same | |
| CA2126479C (en) | Symmetrical multi-layer metal logic array with continuous substrate taps and extension portions for increased gate density | |
| KR100433025B1 (ko) | 반도체장치,반도체집적회로장치,플립플롭회로,배타적논리합회로,멀티플렉서및가산기 | |
| US7989963B2 (en) | Transistor circuit formation substrate | |
| KR920010436B1 (ko) | 게이트 어레이(gate array) | |
| JPH0434309B2 (ko) | ||
| US4825273A (en) | Semiconductor integrated circuit device | |
| EP0598895A1 (en) | Symmetrical multi-layer metal logic array with continuous substrate taps | |
| JPH0371788B2 (ko) | ||
| JPH0258871A (ja) | ボーダーレスマスタスライス半導体装置 | |
| JPH0113223B2 (ko) | ||
| JPH0120539B2 (ko) | ||
| JPH0475664B2 (ko) | ||
| JPS6074647A (ja) | 半導体集積回路装置 | |
| JPS60110137A (ja) | 半導体装置 | |
| JPH0122734B2 (ko) | ||
| JPH0371789B2 (ko) | ||
| KR910001186B1 (ko) | 고집적도 및 고속의 반도체메모리장치 | |
| JPH0329187B2 (ko) | ||
| JPS5844592Y2 (ja) | 半導体集積回路装置 | |
| JPS61107741A (ja) | 半導体集積回路装置 | |
| JPH0154861B2 (ko) | ||
| JPS6342419B2 (ko) | ||
| JPH0317379B2 (ko) | ||
| JPH0531310B2 (ko) |