JPH036901A - Hybrid integrated circuit device - Google Patents

Abstract

PURPOSE:To reduce the wiring area of a microstrip line and to make the size of a hybrid integrated circuit device small by forming a dielectric board with a higher dielectric constant locally on another dielectric board and providing the microstrip line on the dielectric board formed locally. CONSTITUTION:A recessed part is formed by cutting a lower part of a wiring area of a microstrip line 4 tying a transistor(TR) 2 and a chip capacitor 3 arranged on an alumina dielectric board 1 arranged on an alumina dielectric board 1 to nearly a half the thickness of the alumina dielectric board 1 as a trapezoidal shape and a dielectric substance (e.g. barium titanate epsilon=40) 5 having a high specific dielectric constant is buried. Thus, the wavelength of a transmission wave propagated in the microstrip line 4 is more reduced and the wiring area by the microstrip line 4 is more reduced.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a hybrid integrated circuit device, and particularly to a hybrid integrated circuit device suitable for miniaturization.

(Prior Art) In a conventional hybrid integrated circuit device, a hybrid integrated circuit is constructed on an alumina dielectric substrate. Since the dielectric constant of alumina is as small as about 10, the wavelength of the transmitted wave becomes long, making it impossible to shorten the line length of the microstrip line that makes up the hybrid integrated circuit, making it possible to downsize the hybrid integrated circuit device. won.

FIG. 3 is a top view showing a part of a hybrid integrated circuit constructed on an alumina conductive substrate of this type of conventional hybrid integrated circuit device.

In Figure 3, transistor 2 and chip capacitor 3
are connected by a microstrip line 4 formed on an alumina dielectric substrate 1.

[Problem to be solved by the invention]

In the conventional hybrid integrated circuit device described above, the wiring area of the microstrip line 4 occupies a large portion of the alumina dielectric substrate 1 in FIG. For this reason, it has been difficult to downsize the hybrid integrated circuit device.

This invention was made to solve the above-mentioned conventional problems, and aims to provide a hybrid integrated circuit device suitable for miniaturization by reducing the wiring area of the microstrip line. There is.

(Means for solving the i! problem) A hybrid integrated circuit device according to the present invention includes partially forming a dielectric substrate having a larger dielectric constant on a dielectric substrate, and A microstrip line is provided on the body substrate.

[Effect]

In this invention, since the microstrip line formed on the dielectric substrate is formed on a galvanic material having a high dielectric constant, the wavelength of the transmission wave propagating through the microstrip line is shortened.

〔Example〕

An embodiment of the present invention will be described below.

1 and 2 are a top view and a partial sectional view of a hybrid integrated circuit device showing an embodiment of the present invention. For convenience of understanding, FIG. 1 shows the hybrid integrated circuit on the dielectric substrate with the sealing member removed.

In FIG. 1, the lower part of the wiring area of the microstrip line 4 connecting the transistors 2 and chip capacitors 3 arranged on the alumina dielectric substrate 1 is connected to the alumina dielectric substrate 1 with a thickness of about half the thickness of the alumina dielectric substrate 1. For example, a concave portion is formed by cutting into a trapezoidal shape, and a dielectric material 5 having a high dielectric constant (for example, barium titanate ε=40) is embedded in the concave portion.

FIG. 2 is a cross-sectional view taken along the line A-A in FIG. A state in which a strip line 4 is formed is shown.

Note that the microstrip line 4 is formed on a dielectric material 5 with a high dielectric constant embedded in an alumina dielectric substrate 1.
It may be further covered with a dielectric of the same type as the embedded dielectric. Thereby, the wavelength of the transmission wave propagating through the microstrip line 4 can be further shortened, and the wiring area of the microstrip line 4 can be further reduced.

〔Effect of the invention〕

As explained above, in this invention, a dielectric substrate having a larger dielectric constant is partially formed on a dielectric substrate, and a microstrip line is provided on the partially formed dielectric substrate. , the wavelength of the transmission wave propagating through the microstrip line can be shortened, and therefore the line length of the microstrip line can be shortened, the wiring area of the microstrip line can be reduced, the wiring area of the microstrip line can be reduced, and hybrid integration can be achieved. This has the effect of making the circuit device smaller.

[Brief explanation of the drawing]

FIG. 1 is a top view of a hybrid integrated circuit device showing an embodiment of the invention, FIG. 2 is a sectional view taken along line A-A in FIG. 1, and FIG. 3 is a top view of a conventional hybrid integrated circuit device. It is. In the figure, 1 is an alumina dielectric substrate, 2 is a transistor, 3 is a chip capacitor, 4 is a microstrip line, and 5 is a dielectric material having a high dielectric constant. Note that the same reference numerals in each figure indicate the same or corresponding parts. Figure 1 Figure 2 Figure 2

Claims (1)

[Claims] In a hybrid integrated circuit device in which a mixed integrated circuit and a microstrip line are formed on a dielectric substrate, a dielectric substrate having a higher dielectric constant is partially formed on the dielectric substrate, and A hybrid integrated circuit device, characterized in that the microstrip line is provided on a formed dielectric substrate.