WO1997045874A3 - Microwave monolithic integrated circuit with coplaner waveguide having silicon-on-insulator composite substrate - Google Patents

Microwave monolithic integrated circuit with coplaner waveguide having silicon-on-insulator composite substrate Download PDF

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Publication number
WO1997045874A3
WO1997045874A3 PCT/IB1997/000465 IB9700465W WO9745874A3 WO 1997045874 A3 WO1997045874 A3 WO 1997045874A3 IB 9700465 W IB9700465 W IB 9700465W WO 9745874 A3 WO9745874 A3 WO 9745874A3
Authority
WO
WIPO (PCT)
Prior art keywords
oxide layer
silicon
silicon layer
layer
thin
Prior art date
Application number
PCT/IB1997/000465
Other languages
French (fr)
Other versions
WO1997045874A2 (en
Inventor
Manjim Kim
Theodore James Letavic
Original Assignee
Philips Electronics Nv
Philips Norden Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics Nv, Philips Norden Ab filed Critical Philips Electronics Nv
Priority to EP97916616A priority Critical patent/EP0845157A2/en
Priority to JP9541896A priority patent/JPH11510671A/en
Publication of WO1997045874A2 publication Critical patent/WO1997045874A2/en
Publication of WO1997045874A3 publication Critical patent/WO1997045874A3/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00Waveguides; Transmission lines of the waveguide type
    • H01P3/003Coplanar lines
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/66High-frequency adaptations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Abstract

A microwave monolithic integrated circuit includes a coplanar waveguide (CPW) formed by a composite silicon structure constituted by a relatively high resistivity substrate, a first oxide layer on the upper surface thereof, a relatively thin silicon layer formed on the surface of the first oxide layer, and a very thin second oxide layer formed on the surface of the thin silicon layer. The silicon layer and the first oxide layer on which it is formed constitutes a silicon-on-insulator or SOI structure. A metallic signal line and ground planes are bonded to the surface of the second oxide layer. The zone of the thin silicon layer which extends between the ground planes is doped with an active impurity to produce high conductivity therein. As a result, the electric component of a quasi-TEM wave traversing the waveguide is substantially restricted to the thin silicon layer and does not penetrate to the underlying bulk silicon substrate. This achieves significantly reduced transmission loss and a quality factor Q in the vicinity of 17 for the CPW. Passive and active circuits may be formed in regions of the thin silicon layer other than those used for the CPW.
PCT/IB1997/000465 1996-05-30 1997-04-30 Microwave monolithic integrated circuit with coplaner waveguide having silicon-on-insulator composite substrate WO1997045874A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP97916616A EP0845157A2 (en) 1996-05-30 1997-04-30 Microwave monolithic integrated circuit with coplaner waveguide having silicon-on-insulator composite substrate
JP9541896A JPH11510671A (en) 1996-05-30 1997-04-30 Microwave monolithic integrated circuit with coplanar waveguide with SOI composite substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/655,170 1996-05-30
US08/655,170 US5986331A (en) 1996-05-30 1996-05-30 Microwave monolithic integrated circuit with coplaner waveguide having silicon-on-insulator composite substrate

Publications (2)

Publication Number Publication Date
WO1997045874A2 WO1997045874A2 (en) 1997-12-04
WO1997045874A3 true WO1997045874A3 (en) 1998-02-12

Family

ID=24627805

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB1997/000465 WO1997045874A2 (en) 1996-05-30 1997-04-30 Microwave monolithic integrated circuit with coplaner waveguide having silicon-on-insulator composite substrate

Country Status (4)

Country Link
US (1) US5986331A (en)
EP (1) EP0845157A2 (en)
JP (1) JPH11510671A (en)
WO (1) WO1997045874A2 (en)

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