JP2003332487A - High-frequency ic connection structure - Google Patents

High-frequency ic connection structure

Info

Publication number
JP2003332487A
JP2003332487A JP2002138117A JP2002138117A JP2003332487A JP 2003332487 A JP2003332487 A JP 2003332487A JP 2002138117 A JP2002138117 A JP 2002138117A JP 2002138117 A JP2002138117 A JP 2002138117A JP 2003332487 A JP2003332487 A JP 2003332487A
Authority
JP
Japan
Prior art keywords
frequency
connection structure
housing
high frequency
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002138117A
Other languages
Japanese (ja)
Inventor
Shinya Kurose
信也 黒瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Engineering Ltd
Original Assignee
NEC Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Engineering Ltd filed Critical NEC Engineering Ltd
Priority to JP2002138117A priority Critical patent/JP2003332487A/en
Publication of JP2003332487A publication Critical patent/JP2003332487A/en
Pending legal-status Critical Current

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Abstract

<P>PROBLEM TO BE SOLVED: To reduce a size of a device without deteriorating characteristics of the device when connecting a high-frequency IC. <P>SOLUTION: A high-frequency IC connection structure comprises a housing 3 having a top face 3a and a bottom face 3b, a through hole 9 which is extended through the top face 3a and the bottom face 3b of the housing 3, a cylindrical dielectric body 2 inserted into the through hole 9, and a connection pin 1 which is inserted into the through hole 9 in a surrounded state by the dielectric body 2, and which has a holding section 1a for holding a high-frequency signal input/ output pin 4 of the high-frequency IC 5 at edges on the top face 3a and bottom face 3b sides. The holding section 1a of the connection pin 1 is so structured as to elastically hold the high-frequency signal input/output pin 4 of the high-frequency IC 5. A matching circuit may be formed by forming the dielectric body 2 from a plurality of dielectric materials 2 and 8 having different dielectric constants. <P>COPYRIGHT: (C)2004,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、高周波IC接続構
造に関し、特に、高周波ICを接続するにあたって装置
の特性の劣化を招くことなく、装置の小型化を図った高
周波IC接続構造に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency IC connection structure, and more particularly to a high-frequency IC connection structure in which the device is downsized without deterioration of the characteristics of the device when connecting the high-frequency IC.

【0002】[0002]

【従来の技術】従来、高周波ICを接続するにあたっ
て、例えば、図5に示すような接続構造が使用されてい
る。この高周波IC接続構造は、2つの高周波IC15
を、ハウジング13を利用し、誘電体17に囲繞された
導体16及び高周波信号入出力ピン14を介して接続し
ている。
2. Description of the Related Art Conventionally, for connecting a high frequency IC, for example, a connection structure as shown in FIG. 5 has been used. This high-frequency IC connection structure has two high-frequency ICs 15
Are connected using the housing 13 via the conductor 16 surrounded by the dielectric 17 and the high frequency signal input / output pin 14.

【0003】[0003]

【発明が解決しようとする課題】しかし、上記従来の高
周波IC接続構造においては、接続線路が直線にならず
に不連続となるため、高周波信号の不整合が生じて装置
の特性が劣化してしまうという問題があった。
However, in the above-mentioned conventional high-frequency IC connection structure, since the connection line is not straight but discontinuous, a high-frequency signal mismatch occurs and the characteristics of the device deteriorate. There was a problem of being lost.

【0004】また、第2の問題点として、ハウジング1
3の片方の面のみに高周波IC15が実装されているた
め、複数個の高周波IC15を装置内に実装する場合に
は、実装面積が増加し、装置の小型化を図るのが困難で
あるという問題があった。
A second problem is that the housing 1
Since the high-frequency IC 15 is mounted on only one surface of No. 3, when mounting a plurality of high-frequency ICs 15 in the device, the mounting area increases and it is difficult to reduce the size of the device. was there.

【0005】そこで、本発明は、上記従来の高周波IC
接続構造における問題点に鑑みてなされたものであっ
て、高周波ICを接続するにあたって装置の特性の劣化
を招くことなく、装置の小型化を図ることのできる高周
波IC接続構造を提供することを目的とする。
Therefore, the present invention is based on the conventional high-frequency IC described above.
The present invention has been made in view of the problems in the connection structure, and an object of the present invention is to provide a high-frequency IC connection structure capable of downsizing the device without deteriorating the characteristics of the device when connecting the high-frequency IC. And

【0006】[0006]

【課題を解決するための手段】上記目的を達成するた
め、請求項1記載の発明は、高周波IC接続構造であっ
て、上面と下面とを有するハウジングと、該ハウジング
の前記上面及び下面を貫通する貫通孔と、該貫通孔に挿
入される筒状の誘電体と、該誘電体に囲繞された状態で
前記貫通孔に挿入され、前記ハウジングの前記上面及び
下面側端部に高周波ICの高周波信号入出力ピンを保持
する保持部を備えた接続用ピンとを備えることを特徴と
する。
To achieve the above object, the invention according to claim 1 is a high-frequency IC connection structure, wherein a housing having an upper surface and a lower surface, and the upper surface and the lower surface of the housing are penetrated. A through-hole, a cylindrical dielectric body inserted into the through-hole, and a high-frequency IC high-frequency IC inserted in the through-hole in a state of being surrounded by the dielectric body, at the upper and lower end portions of the housing. And a connection pin having a holding portion for holding the signal input / output pin.

【0007】そして、請求項1記載の発明によれば、ハ
ウジングに穿設した貫通孔、貫通孔に挿入した誘電体、
及び接続用ピンとによって高周波ICの高周波信号入出
力ピンを直線上で接続することができるため、接続線路
において不連続性を減らすことができ、高周波ICを接
続するにあたって装置の特性の劣化を招くことがない。
また、ハウジングの両面に高周波ICを配置することに
よって装置の小型化を実現することができる。
According to the first aspect of the invention, the through hole formed in the housing, the dielectric inserted in the through hole,
Since the high-frequency signal input / output pin of the high-frequency IC can be connected in a straight line by the connection pin and the connection pin, discontinuity in the connection line can be reduced, and the characteristics of the device may be deteriorated when connecting the high-frequency IC. There is no.
Further, by arranging the high frequency ICs on both surfaces of the housing, it is possible to realize the miniaturization of the device.

【0008】請求項2記載の発明は、請求項1記載の高
周波IC接続構造の好ましい一形態として、前記接続用
ピンの保持部を、前記高周波ICの高周波信号入出力ピ
ンを弾性的に保持するように構成したことを特徴とす
る。
According to a second aspect of the present invention, as a preferred form of the high-frequency IC connection structure according to the first aspect, the holding portion of the connecting pin elastically holds the high-frequency signal input / output pin of the high-frequency IC. It is characterized in that it is configured as follows.

【0009】請求項3記載の発明は、請求項1または2
記載の高周波IC接続構造において、前記誘電体を、異
なる誘電率を有する複数の誘電体で構成したことを特徴
とする。これによって、整合回路を構成することができ
る。
The invention according to claim 3 is the invention according to claim 1 or 2.
In the high frequency IC connection structure described above, the dielectric is composed of a plurality of dielectrics having different dielectric constants. With this, the matching circuit can be configured.

【0010】[0010]

【発明の実施の形態】次に、本発明にかかる高周波IC
接続構造の実施の形態の具体例を図面を参照しながら説
明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a high frequency IC according to the present invention
A specific example of the embodiment of the connection structure will be described with reference to the drawings.

【0011】図1乃至図3は、本発明にかかる高周波I
C接続構造の第1実施例を示し、この高周波IC接続構
造は、ハウジング3と、ハウジング3を貫通する貫通孔
9と、貫通孔9に挿入される筒状の誘電体2と、誘電体
2に囲繞された状態で貫通孔9に挿入される接続用ピン
1とで構成される。
1 to 3 show a high frequency I according to the present invention.
The first embodiment of the C connection structure is shown. The high frequency IC connection structure includes a housing 3, a through hole 9 penetrating the housing 3, a cylindrical dielectric 2 inserted into the through hole 9, and a dielectric 2. The connecting pin 1 is inserted into the through hole 9 in a state of being surrounded by.

【0012】接続用ピン1は、図3に示すように、両端
部にすり割り部1aを有する円筒状に形成され、両端部
において高周波ICの高周波信号入出力ピンを弾性的に
保持することができる。そして、図2に示すように、接
続用ピン1の両端部において高周波IC5の高周波信号
入出力ピン4を保持した状態で、接続用ピン1、誘電体
2及びハウジング3が各々中心導体、外部誘電体及び外
部導体として機能し、同軸線路(分布定数線路)を構成
することができる。
As shown in FIG. 3, the connecting pin 1 is formed in a cylindrical shape having a slot portion 1a at both ends, and can elastically hold the high frequency signal input / output pin of the high frequency IC at both ends. it can. Then, as shown in FIG. 2, with the high-frequency signal input / output pin 4 of the high-frequency IC 5 held at both ends of the connecting pin 1, the connecting pin 1, the dielectric 2 and the housing 3 are respectively the central conductor and the external dielectric. A coaxial line (distributed constant line) can be configured by functioning as a body and an outer conductor.

【0013】これによって、高周波IC5の高周波信号
入出力ピン4の間を同一直線上で接続することができ、
接続線路の連続性を維持することができ、高周波信号の
不整合が生じるのを防止することができる。また、2つ
の高周波IC5をハウジング3の上面3a及び下面3b
の両面に実装することができるため、装置の小型化を図
ることもできる。
As a result, the high frequency signal input / output pins 4 of the high frequency IC 5 can be connected on the same straight line,
The continuity of the connection line can be maintained, and the occurrence of mismatch of high frequency signals can be prevented. Further, the two high frequency ICs 5 are connected to the upper surface 3a and the lower surface 3b of the housing 3.
Since it can be mounted on both sides of the device, the device can be downsized.

【0014】ここで、誘電体2の誘電率をε、内径を
D、接続用ピン1の外径をdとすると、接続用ピン1、
誘電体2及びハウジング3で構成されるコネクタ部の特
性インピーダンスZ0は、式(1)によって求めること
ができる。
Assuming that the permittivity of the dielectric 2 is ε, the inner diameter is D, and the outer diameter of the connecting pin 1 is d, the connecting pin 1,
The characteristic impedance Z 0 of the connector portion composed of the dielectric 2 and the housing 3 can be obtained by the equation (1).

【0015】[0015]

【数1】 高周波IC5の特性インピーダンスに上記コネクタ部の
特性インピーダンスを合わせるには、式(1)によって
求められるZ0を使用する。
[Equation 1] In order to match the characteristic impedance of the connector section with the characteristic impedance of the high frequency IC 5, Z 0 calculated by the equation (1) is used.

【0016】また、上記の理論を利用し、誘電体2の材
質を変更して誘電率を変化させてZ 0を適切なインピー
ダンスに設定することにより、コネクタ部で高周波信号
の整合を取ることも可能である。
Further, using the above theory, the material of the dielectric 2 is
Change the quality and change the permittivity to Z 0The proper impey
By setting to dance, the high frequency signal is
It is also possible to match.

【0017】図4は、本発明にかかる高周波IC接続構
造の第2実施例を示し、この高周波IC接続構造は、ハ
ウジング3と、ハウジング3を貫通する貫通孔9と、貫
通孔9に挿入される筒状の2種類の誘電体2、8と、誘
電体2、8に囲繞された状態で貫通孔9に挿入される接
続用ピン1とで構成される。本実施例においては、誘電
体2、8の誘電率を互いに異なるようにして、整合回路
を構成している。
FIG. 4 shows a second embodiment of the high-frequency IC connection structure according to the present invention. This high-frequency IC connection structure is inserted into the housing 3, the through hole 9 penetrating the housing 3, and the through hole 9. It is composed of two types of cylindrical dielectrics 2 and 8 and a connecting pin 1 which is inserted into the through hole 9 while being surrounded by the dielectrics 2 and 8. In the present embodiment, the matching circuits are configured by making the dielectric constants of the dielectrics 2 and 8 different from each other.

【0018】[0018]

【発明の効果】以上説明したように、本発明にかかる高
周波IC接続構造によれば、高周波ICを接続するにあ
たって装置の特性の劣化を招くことなく、装置の小型化
を図ることが可能となる。
As described above, according to the high frequency IC connection structure of the present invention, the size of the device can be reduced without deteriorating the characteristics of the device when connecting the high frequency IC. .

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明にかかる高周波IC接続構造の第1実施
例を示す斜視図である。
FIG. 1 is a perspective view showing a first embodiment of a high-frequency IC connection structure according to the present invention.

【図2】図1の高周波IC接続構造において2つの高周
波ICを接続した状態を示す断面図である。
FIG. 2 is a cross-sectional view showing a state where two high frequency ICs are connected in the high frequency IC connection structure of FIG.

【図3】図1の高周波IC接続構造の接続用ピンを示す
図であって、(a)は上面図、(b)は(a)のA−A
線断面図である。
3A and 3B are diagrams showing connection pins of the high-frequency IC connection structure of FIG. 1, in which FIG. 3A is a top view and FIG. 3B is AA of FIG.
It is a line sectional view.

【図4】本発明にかかる高周波IC接続構造の第2実施
例において2つの高周波ICを接続した状態を示す断面
図である。
FIG. 4 is a cross-sectional view showing a state in which two high frequency ICs are connected in the second embodiment of the high frequency IC connection structure according to the present invention.

【図5】従来の高周波IC接続構造の一例を示す断面図
である。
FIG. 5 is a sectional view showing an example of a conventional high-frequency IC connection structure.

【符号の説明】[Explanation of symbols]

1 接続用ピン 1a すり割り部 2 誘電体 3 ハウジング 3a 上面 3b 下面 4 高周波信号入出力ピン 5 高周波IC 8 誘電体 9 貫通孔 1 Connection pin 1a slot 2 dielectric 3 housing 3a upper surface 3b lower surface 4 High frequency signal input / output pin 5 high frequency IC 8 Dielectric 9 through holes

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 上面と下面とを有するハウジングと、 該ハウジングの前記上面及び下面を貫通する貫通孔と、 該貫通孔に挿入される筒状の誘電体と、 該誘電体に囲繞された状態で前記貫通孔に挿入され、前
記ハウジングの前記上面及び下面側端部に高周波ICの
高周波信号入出力ピンを保持する保持部を備えた接続用
ピンとを備えることを特徴とする高周波IC接続構造。
1. A housing having an upper surface and a lower surface, a through hole penetrating the upper surface and the lower surface of the housing, a cylindrical dielectric member inserted into the through hole, and a state surrounded by the dielectric material. And a connecting pin having a holding portion for holding the high frequency signal input / output pin of the high frequency IC, which is inserted into the through hole and is provided on the upper and lower surface side end portions of the housing.
【請求項2】 前記接続用ピンの保持部は、前記高周波
ICの高周波信号入出力ピンを弾性的に保持することを
特徴とする請求項1記載の高周波IC接続構造。
2. The high frequency IC connection structure according to claim 1, wherein the holding portion of the connection pin elastically holds the high frequency signal input / output pin of the high frequency IC.
【請求項3】 前記誘電体を、異なる誘電率を有する複
数の誘電体で構成したことを特徴とする請求項1または
2記載の高周波IC接続構造。
3. The high frequency IC connection structure according to claim 1, wherein the dielectric is composed of a plurality of dielectrics having different permittivities.
JP2002138117A 2002-05-14 2002-05-14 High-frequency ic connection structure Pending JP2003332487A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002138117A JP2003332487A (en) 2002-05-14 2002-05-14 High-frequency ic connection structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002138117A JP2003332487A (en) 2002-05-14 2002-05-14 High-frequency ic connection structure

Publications (1)

Publication Number Publication Date
JP2003332487A true JP2003332487A (en) 2003-11-21

Family

ID=29699640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002138117A Pending JP2003332487A (en) 2002-05-14 2002-05-14 High-frequency ic connection structure

Country Status (1)

Country Link
JP (1) JP2003332487A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008146882A (en) * 2006-12-06 2008-06-26 Auto Network Gijutsu Kenkyusho:Kk Coax connector
JP2008181738A (en) * 2007-01-24 2008-08-07 Nec Corp Connecting connector, connecting method, and connection structure
JP2009267319A (en) * 2008-04-25 2009-11-12 Jiaotong Univ Vertical transmission structure for high frequency transmission line

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008146882A (en) * 2006-12-06 2008-06-26 Auto Network Gijutsu Kenkyusho:Kk Coax connector
JP2008181738A (en) * 2007-01-24 2008-08-07 Nec Corp Connecting connector, connecting method, and connection structure
JP2009267319A (en) * 2008-04-25 2009-11-12 Jiaotong Univ Vertical transmission structure for high frequency transmission line

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