JPH036677B2 - - Google Patents

Info

Publication number
JPH036677B2
JPH036677B2 JP56133106A JP13310681A JPH036677B2 JP H036677 B2 JPH036677 B2 JP H036677B2 JP 56133106 A JP56133106 A JP 56133106A JP 13310681 A JP13310681 A JP 13310681A JP H036677 B2 JPH036677 B2 JP H036677B2
Authority
JP
Japan
Prior art keywords
region
gate
active layer
channel
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56133106A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5833887A (ja
Inventor
Junichi Nishizawa
Tadahiro Oomi
Masakazu Morishita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP56133106A priority Critical patent/JPS5833887A/ja
Priority to US06/411,080 priority patent/US4534033A/en
Priority to GB08224295A priority patent/GB2111743B/en
Priority to DE19823231579 priority patent/DE3231579A1/de
Priority to FR8214583A priority patent/FR2512286B1/fr
Publication of JPS5833887A publication Critical patent/JPS5833887A/ja
Publication of JPH036677B2 publication Critical patent/JPH036677B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06213—Amplitude modulation

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Semiconductor Lasers (AREA)
JP56133106A 1981-08-25 1981-08-25 半導体レ−ザ Granted JPS5833887A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP56133106A JPS5833887A (ja) 1981-08-25 1981-08-25 半導体レ−ザ
US06/411,080 US4534033A (en) 1981-08-25 1982-08-24 Three terminal semiconductor laser
GB08224295A GB2111743B (en) 1981-08-25 1982-08-24 Semiconductor laser
DE19823231579 DE3231579A1 (de) 1981-08-25 1982-08-25 Halbleiterlaser
FR8214583A FR2512286B1 (fr) 1981-08-25 1982-08-25 Laser a semi-conducteur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56133106A JPS5833887A (ja) 1981-08-25 1981-08-25 半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS5833887A JPS5833887A (ja) 1983-02-28
JPH036677B2 true JPH036677B2 (enrdf_load_stackoverflow) 1991-01-30

Family

ID=15096950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56133106A Granted JPS5833887A (ja) 1981-08-25 1981-08-25 半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS5833887A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61134093A (ja) * 1984-12-05 1986-06-21 Nec Corp 半導体レ−ザを含む集積素子
JP2006080427A (ja) * 2004-09-13 2006-03-23 Univ Of Tokyo 半導体発光素子
JP2013217346A (ja) 2012-04-12 2013-10-24 Hitachi Ltd ポンプ吸込管

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5414692A (en) * 1977-07-05 1979-02-03 Fujitsu Ltd Liminous semiconductor device

Also Published As

Publication number Publication date
JPS5833887A (ja) 1983-02-28

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