JPH0366115A - Semiconductor process support system - Google Patents

Semiconductor process support system

Info

Publication number
JPH0366115A
JPH0366115A JP20139789A JP20139789A JPH0366115A JP H0366115 A JPH0366115 A JP H0366115A JP 20139789 A JP20139789 A JP 20139789A JP 20139789 A JP20139789 A JP 20139789A JP H0366115 A JPH0366115 A JP H0366115A
Authority
JP
Japan
Prior art keywords
conditions
wafer
lot
condition
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20139789A
Other languages
Japanese (ja)
Other versions
JP2528713B2 (en
Inventor
Shigeru Matsumoto
茂 松本
Akihiro Sawada
昭弘 澤田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1201397A priority Critical patent/JP2528713B2/en
Publication of JPH0366115A publication Critical patent/JPH0366115A/en
Application granted granted Critical
Publication of JP2528713B2 publication Critical patent/JP2528713B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • General Factory Administration (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE:To reduce the number of lot by setting process treatment conditions for every semiconductor wafer thereby considering only one lot even when a plurality of conditions are set in one process. CONSTITUTION:As to processes from 1 to 4, conditions from 1 to 4 are set as process treatment conditions for each process irrespective of the number of wafers. As to the process 5, the number of the process treatment conditions is designated as 3 and respective conditions are established for each wafer: the process treatment condition 5a is set to a wafer No.1, the process treatment condition 5b is set to a wafer No.2, and the process treatment condition 5c is set to a wafer No.3. As to the processes from 6 to 9, the process treatment conditions 6-9 are set for respective processes irrespective of the number of the wafers. As a result, such process conditions can be set as the process 1 to the process 9 are considered as one lot (Lot-A).

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は半導体プロセスフロー作成手段を有する半導体
プロセス支援システムに関するものである。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a semiconductor process support system having a semiconductor process flow creation means.

(従来の技術) 半導体プロセス支援システムの従来例を第3図に基づい
て説明する。
(Prior Art) A conventional example of a semiconductor process support system will be explained based on FIG.

従来の半導体プロセス支援システムにおける半導体プロ
セスフロー作成では、各々の工程に対して工つのプロセ
ス処理条件しか設定できず、たとえば、9つの工程から
なり工程5 (50)で3つの違ったプロセス処理条件
5a(5])、 5b(52)、 5c(53)を設定
する場合には工程100)から工程4(40)までは3
枚の半導体ウェハー(以下ウェハーと略す)から構成さ
れる1つのL ot −A (21)として処理条件を
設定し、工程5 (50)ではそれぞれ1枚のウェハー
から構成されるLot−B(22)にプロセス処理条件
5a(51)を、L ot −C(23)にプロセス処
理条件5b(52)を、L ot −D (24)にプ
ロセス処理条件5c(53)をそれぞれ設定し、工程6
 (60)から工程9 (90)までは再び3枚のウェ
ハーから構成される1つのLot−E(25)として処
理条件を設定していた。
When creating a semiconductor process flow in a conventional semiconductor process support system, only one process condition can be set for each process. (5]), 5b (52), and 5c (53), set 3 from step 100) to step 4 (40).
Processing conditions are set for one Lot-A (21) consisting of two semiconductor wafers (hereinafter referred to as wafers), and in step 5 (50), Lot-B (22) consisting of one wafer each. ), process condition 5b (52) is set to Lot-C (23), process condition 5c (53) is set to Lot-D (24), and step 6
From step (60) to step 9 (90), processing conditions were again set as one Lot-E (25) consisting of three wafers.

すなわち、1つの工程で3つのプロセス処理条件を設定
するために5つのロットを必要としていた。
That is, five lots were required to set three process conditions in one process.

(発明が解決しようとする課題) 上記、従来のように、工程で複数のプロセス処理条件を
設定するためには、土工程でのプロセス処却条件数×複
数のプロセス処理条件を指定する工程数+2に相当する
ロットが必要になり、ロット数が増大するという欠点が
あった。
(Problem to be Solved by the Invention) As mentioned above, in order to set multiple process conditions in a process as in the past, the number of process conditions in the soil process x the number of processes in which multiple process conditions are specified There was a drawback that a lot equivalent to +2 was required, and the number of lots increased.

本発明の目的は、従来の欠点を解消し、ある一つの工程
で複数のプロセス処理条件を設定する場合でも1つのロ
フトとすることができロフト数を減少させることができ
る半導体プロセス支援システムを提供することである。
An object of the present invention is to provide a semiconductor process support system that eliminates the conventional drawbacks and can reduce the number of lofts by setting one loft even when multiple process conditions are set in one process. It is to be.

(il1題を解決するための手段) 本発明の半導体プロセス支援システムは、順に並べた複
数の半導体プロセス工程において、それぞれのウェハー
毎にプロセス処理条件を設定する半導体プロセスフロー
作成手段を備えたものである。
(Means for Solving Problem il1) The semiconductor process support system of the present invention is equipped with a semiconductor process flow creation means for setting process conditions for each wafer in a plurality of sequentially arranged semiconductor process steps. be.

(作 用) 本発明は上記の手段を用いることにより、半導体プロセ
ス工程において、それぞれのウェハー毎に半導体プロセ
ス処理条件を設定し、複数のプロセス処理条件を設定す
る場合でも1つのロットとすることができ、ロフト数を
減少することができる。
(Function) By using the above-mentioned means, the present invention allows semiconductor processing conditions to be set for each wafer in a semiconductor process step, and even when a plurality of process conditions are set, it can be processed into one lot. It is possible to reduce the number of lofts.

(実施例) 本発明における一実施例を第1図、および第2図に基づ
いて説明する。
(Example) An example of the present invention will be described based on FIG. 1 and FIG. 2.

第1図は本発明の半導体プロセス支援システムの半導体
プロセスフロー作成手段のフローチャートであり、第2
図は同半導体プロセス支援システムのロット構成図であ
る。第1図および第2図において、第3図に示した従来
例と同じ部分については同一符号を付し、一部その説明
を省略する。
FIG. 1 is a flowchart of the semiconductor process flow creation means of the semiconductor process support system of the present invention;
The figure is a lot configuration diagram of the semiconductor process support system. In FIGS. 1 and 2, the same parts as those in the conventional example shown in FIG. 3 are given the same reference numerals, and some explanations are omitted.

3枚のウェハー(ウェハーNo、1.2.3)から構成
される9つの半導体プロセス工程において、工程5 (
50)で3つの違ったプロセス処理条件5a(51) 
、 5 b(52) 、 5 c(53)を設定する場
合には、ウェハー枚数を3枚と指定する(1)。
In the nine semiconductor process steps consisting of three wafers (wafer No. 1.2.3), step 5 (
50) with three different process conditions 5a (51)
, 5 b (52), 5 c (53), the number of wafers is specified as 3 (1).

あらかじめ登録されている一覧表などから順序を考慮し
9つの工程を並べる(2)。
The nine processes are arranged in order from a list registered in advance (2).

工程1 (10)から工程4 (40)までは、ウェハ
ーN o、に関係なく工程毎に条件1 (11)から条
件4(41)とプロセス処理条件を設定する(3)。
From process 1 (10) to process 4 (40), process conditions are set from condition 1 (11) to condition 4 (41) for each process regardless of the wafer No. (3).

工程5 (50)では、プロセス処理条件数を3と指定
し、ウェハーNo、1には条件5a(51)のプロセ3
− − ス処理条件、ウェハーNo、2には条件5b(52)の
プロセス処理条件、ウェハーNo、3には条件5c(5
3)のプロセス処理条件をそれぞれウェハー毎に設定す
る(4)。
In step 5 (50), the number of process processing conditions is specified as 3, and wafer No. 1 is subjected to process 3 of condition 5a (51).
- Processing conditions: condition 5b (52) for wafer No. 2; condition 5c (52) for wafer No. 3;
The process conditions of 3) are set for each wafer (4).

工程6 (60)から工程9 (90)までは、ウェハ
ーN o、に関係なく工程毎に条件6 (61)から条
件9(91)とプロセス処理条件を設定する(3)。
From process 6 (60) to process 9 (90), process conditions are set from condition 6 (61) to condition 9 (91) for each process regardless of the wafer number (3).

したがって、工程1 (10)から工程9 (90)ま
で1つのロフトL ot −A (21)としてプロセ
ス処理条件を設定できる。
Therefore, the process conditions can be set as one loft L ot -A (21) from step 1 (10) to step 9 (90).

設定した半導体プロセスをDBなどに登録しく5)、ク
リーンペーパーなどに印刷を行う(6)。
Register the set semiconductor process in a DB etc. 5) and print on clean paper etc. (6).

(発明の効果) 本発明によれば、半導体プロセス工程においてそれぞれ
の半導体ウェハー毎にプロセス処理条件を設定すること
により、あるlっの工程で複数のプロセス処理条件を設
定する場合でも1つのロフトとすることができ、ロット
数を減少させ、その実用上の効果は大である。
(Effects of the Invention) According to the present invention, by setting process conditions for each semiconductor wafer in a semiconductor process step, even if a plurality of process conditions are set in a certain process, one loft can be set. This reduces the number of lots and has great practical effects.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例における半導体プロセス支援
システムの半導体プロセスフロー作成手段のフローチャ
ート、第2図は同半導体プロセス支援システムのロット
構成図、第3図は従来の半導体プロセス支援システムの
ロット構成図である。 l ・・・ウェハー枚数を指定する手段、2・・・工程
を並べる手段、 3・・・工程毎に条件を設定する手段
、 4 ・・・ウェハー毎に条件を設定する手段、 5
・・・DBに登録する手段、 6 ・・・印刷する手段
、10・・・工程1.11・・・条件1.21・・・L
ot−A、22・=Lot−B、23 ・・・Lot−
C124−Lot−D、25−Lot−E、40−・・
工程4.41−・・条件4.50−・・工程5.51−
・条件5a、52・・・条件5b、53・・・条件5C
160・・・工程6.61・・・条件6.90・・・工
程9.91・・・条件9゜
FIG. 1 is a flowchart of a semiconductor process flow creation means of a semiconductor process support system according to an embodiment of the present invention, FIG. 2 is a lot configuration diagram of the same semiconductor process support system, and FIG. 3 is a lot diagram of a conventional semiconductor process support system. FIG. l... Means for specifying the number of wafers, 2... Means for arranging processes, 3... Means for setting conditions for each process, 4... Means for setting conditions for each wafer, 5
...Means for registering in the DB, 6...Means for printing, 10...Step 1.11...Condition 1.21...L
ot-A, 22・=Lot-B, 23...Lot-
C124-Lot-D, 25-Lot-E, 40-...
Step 4.41--Condition 4.50--Step 5.51-
・Condition 5a, 52...Condition 5b, 53...Condition 5C
160...Process 6.61...Condition 6.90...Process 9.91...Condition 9°

Claims (1)

【特許請求の範囲】[Claims] 順に並べた複数の半導体プロセス工程においてそれぞれ
の半導体ウェハー毎にプロセス処理条件を設定する半導
体プロセスフロー作成手段を備えたことを特徴とする半
導体プロセス支援システム。
1. A semiconductor process support system comprising a semiconductor process flow creation means for setting process conditions for each semiconductor wafer in a plurality of sequentially arranged semiconductor process steps.
JP1201397A 1989-08-04 1989-08-04 Semiconductor process support system Expired - Fee Related JP2528713B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1201397A JP2528713B2 (en) 1989-08-04 1989-08-04 Semiconductor process support system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1201397A JP2528713B2 (en) 1989-08-04 1989-08-04 Semiconductor process support system

Publications (2)

Publication Number Publication Date
JPH0366115A true JPH0366115A (en) 1991-03-20
JP2528713B2 JP2528713B2 (en) 1996-08-28

Family

ID=16440414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1201397A Expired - Fee Related JP2528713B2 (en) 1989-08-04 1989-08-04 Semiconductor process support system

Country Status (1)

Country Link
JP (1) JP2528713B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05109596A (en) * 1991-10-15 1993-04-30 Nec Yamagata Ltd Manufacturing and controlling method for semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05109596A (en) * 1991-10-15 1993-04-30 Nec Yamagata Ltd Manufacturing and controlling method for semiconductor device

Also Published As

Publication number Publication date
JP2528713B2 (en) 1996-08-28

Similar Documents

Publication Publication Date Title
JPH03173471A (en) Wiring structure of master slice system lsi
JPS55129333A (en) Scale-down projection aligner and mask used for this
JPH0366115A (en) Semiconductor process support system
JPH09283404A (en) Electron beam exposure
JP2990530B2 (en) Method for manufacturing semiconductor device
JP2654217B2 (en) Wafer transfer method
JPS63108706A (en) Manufacture of semiconductor device
JP2664465B2 (en) Cell placement method for semiconductor device
JPH055379B2 (en)
JP2705258B2 (en) Semiconductor process support system
JPH0199051A (en) Semiconductor manufacturing mask
JP2878551B2 (en) Exposure method
JPH03260722A (en) Sorting system
JPS6214426A (en) Drawing and exposure for semiconductor wafer
JP2923655B2 (en) Projection exposure method
JPH0546575A (en) Setting system for parallel computer message packet transfer path determination table
JP2002270482A (en) Method and apparatus for controlling exposure process and manufacturing apparatus thereof
JPS6254921A (en) Manufacture of semiconductor device
JPS6212664B2 (en)
JPH06181152A (en) Forming apparatus for classificatin of wafer according to condition
JPH03203313A (en) Exposure of semiconductor device
JP2667474B2 (en) Block placement method
JPS62144494A (en) Management system for information being internally processed
JPH0451512A (en) Semiconductor integrated circuit device
JPH022556A (en) Stepper reticle for semiconductor device manufacture

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080614

Year of fee payment: 12

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090614

Year of fee payment: 13

LAPS Cancellation because of no payment of annual fees