JPH0363077U - - Google Patents

Info

Publication number
JPH0363077U
JPH0363077U JP12118089U JP12118089U JPH0363077U JP H0363077 U JPH0363077 U JP H0363077U JP 12118089 U JP12118089 U JP 12118089U JP 12118089 U JP12118089 U JP 12118089U JP H0363077 U JPH0363077 U JP H0363077U
Authority
JP
Japan
Prior art keywords
switching element
integrated circuit
semiconductor integrated
turned
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12118089U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12118089U priority Critical patent/JPH0363077U/ja
Publication of JPH0363077U publication Critical patent/JPH0363077U/ja
Pending legal-status Critical Current

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  • Dc-Dc Converters (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本考案に係る半導体集積回路装置の一
実施例を示す回路図、第２図ａはコンパレータの
出力電圧を示す波形図、第２図ｂは接地端子と出
力端子間の電圧を示す波形図、第２図ｃはコンパ
レータの入力電圧を示す波形図である。第３図は
半導体集積回路装置の従来例を示す回路図である
。 １……半導体ペレツト、２……半導体集積回路
、１３……スイツチング素子、１５……コンパレ
ータ、１６……基準電圧源、１９……転流用素子
（ＭＯＳ ＦＥＴ）。 Figure 1 is a circuit diagram showing an embodiment of the semiconductor integrated circuit device according to the present invention, Figure 2a is a waveform diagram showing the output voltage of the comparator, and Figure 2b is the voltage between the ground terminal and the output terminal. Waveform diagram, FIG. 2c is a waveform diagram showing the input voltage of the comparator. FIG. 3 is a circuit diagram showing a conventional example of a semiconductor integrated circuit device. DESCRIPTION OF SYMBOLS 1... Semiconductor pellet, 2... Semiconductor integrated circuit, 13... Switching element, 15... Comparator, 16... Reference voltage source, 19... Commutation element (MOS FET).

Claims (1)

【実用新案登録請求の範囲】 基準電圧源、コンパレータ及びスイツチング素
子を含む半導体集積回路を内蔵した半導体ペレツ
トからなり、基準電圧との比較によりスイツチン
グ素子をＯＮ・ＯＦＦさせて出力電圧を制御する
半導体集積回路装置において、 上記スイツチング素子のＯＮ時に蓄積されたエ
ネルギーをそのＯＦＦ時に強制的に放出させるＭ
ＯＳ ＦＥＴよりなる転流用素子を半導体ペレツ
ト内に組込んだことを特徴とする半導体集積回路
装置。[Claim for Utility Model Registration] A semiconductor integrated circuit consisting of a semiconductor pellet containing a semiconductor integrated circuit including a reference voltage source, a comparator, and a switching element, which controls the output voltage by turning the switching element ON/OFF by comparison with the reference voltage. In a circuit device, the energy accumulated when the switching element is turned on is forcibly released when the switching element is turned off.
A semiconductor integrated circuit device characterized in that a commutation element made of an OS FET is incorporated into a semiconductor pellet.
JP12118089U 1989-10-16 1989-10-16 Pending JPH0363077U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12118089U JPH0363077U (en) 1989-10-16 1989-10-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12118089U JPH0363077U (en) 1989-10-16 1989-10-16

Publications (1)

Publication Number Publication Date
JPH0363077U true JPH0363077U (en) 1991-06-20

Family

ID=31669218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12118089U Pending JPH0363077U (en) 1989-10-16 1989-10-16

Country Status (1)

Country Link
JP (1) JPH0363077U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009257030A (en) * 2008-04-18 2009-11-05 Ohmi Environment Conservation Foundation Combined bamboo piles, revetment structure using it and formation method thereof
JP2011205873A (en) * 2010-03-26 2011-10-13 Toshiba Corp Dc to dc converter

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6359763A (en) * 1986-08-28 1988-03-15 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Inductor current control circuit
JPS63124767A (en) * 1986-11-14 1988-05-28 Hitachi Ltd Power source device using insulated gate type field effect transistor
JPS6459763A (en) * 1987-08-28 1989-03-07 Shin Kobe Electric Machinery Surface treatment method for lead-acid battery plate group strap

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6359763A (en) * 1986-08-28 1988-03-15 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Inductor current control circuit
JPS63124767A (en) * 1986-11-14 1988-05-28 Hitachi Ltd Power source device using insulated gate type field effect transistor
JPS6459763A (en) * 1987-08-28 1989-03-07 Shin Kobe Electric Machinery Surface treatment method for lead-acid battery plate group strap

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009257030A (en) * 2008-04-18 2009-11-05 Ohmi Environment Conservation Foundation Combined bamboo piles, revetment structure using it and formation method thereof
JP4574696B2 (en) * 2008-04-18 2010-11-04 財団法人淡海環境保全財団 Bamboo pile assembly and revetment structure using the same
JP2011205873A (en) * 2010-03-26 2011-10-13 Toshiba Corp Dc to dc converter

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