JPH0362602A - Semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a high frequency high output through the use of a small seized package by mounting two semiconductor chips each different in distance from an input terminal and output terminal and providing an input side matching circuit and an output side matching circuit. CONSTITUTION:FET chips 5a, 5b are mounted to positions different from the distance from an input terminal 6 and an output terminal 7, that is, the distance between both the chips is l. Moreover, an input side matching circuit 2a and an output side matching circuit 3a are provided so that a phase difference between the chips 5a, 5b with respect to the terminals 6, 7 is respectively lambdag/4 and-lambdag/4, where lambdag is a wavelength of the signal. Since a phase difference of lambdag/2 is generated by a wave reflected at the input side of the chips 5a, 5b, the waves are cancelled out each other and an excellent return loss is obtained from a impedance when viewing the element outside independently of the matching state of the chips 5a, 5b. Furthermore, the gate width of the chips 5a, 5b is large than a half the width of a package 1 and high frequency and high output is obtained by using a small sized package.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention is applied to a semiconductor device operating in an ultra-high frequency band,
In particular, it relates to high-power GaAsMfESF8T (GaAs Schottky junction field effect transistor) and high-power hybrid ICs.

〔overview〕

The present invention provides a high-frequency, high-output semiconductor device in which two semiconductor chips are mounted on a package and operated in parallel, in which the two semiconductor chips are mounted at positions apart from each other so that their center lines do not overlap, and By providing the input-side matching circuit and the output-side matching circuit so that the phase difference between both semiconductor chips with respect to the input side terminal and the output terminal, respectively, is λg/4 and -λg/4, where the signal wavelength is λg. , making it possible to mount large semiconductor chips,
This is aimed at improving high output characteristics.

[Conventional technology]

Conventionally, in the terminal section of high-power GaAs MESFETs and high-power hybrid ICs, two GaAs MESFETs were used as shown in Figure 3 in order to increase the output of the device.
The configuration is such that T chips operate in parallel. In this case, the two FET chips 4a and 4b were placed at the same phase, that is, at the same size, from the input terminal 6 or output terminal 7 of the package 1 on which the semiconductor chip is mounted. In FIG. 3, 2 and 3 are a 50Ω input-side matching circuit and an output-side matching circuit, respectively, which are formed on a 3102 substrate and are made of strip lines.

[Problem that the invention seeks to solve]

In the configuration of the conventional semiconductor device described above, one F
As shown in FIG. 3, the width A of the package 1 is the limit for the width of the ET chip 4a or 4b.

Therefore, in order to increase the output of the device, individual GaAsME
Increasing the gate width of SFETs requires larger packages. The resonant frequency f of the TEIIO mode of the package is determined by where the width of the package internal dimension is a1 and the width in the microwave transmission direction is b, so as the package size increases, the usable frequency decreases. . a=9.5mm.

b = 8.9[[In the 1I11 package, assuming a safety factor of 30%, f r '16.5GHz,
Considering the difficulty of assembly when mounting a semiconductor, even with this package that can be used in the Ku band, G with a gate width of 4 mm or more
It became impossible to mount an aAs MESFET chip, and there was a problem that there was a limit to increasing the output of the element.

The purpose of the present invention is to solve the above-mentioned problems.
An object of the present invention is to provide a semiconductor device that can obtain high output using a small package.

[Means for solving problems]

The present invention provides a package having an input side child and an output terminal, two semiconductor chips mounted on this package, and a connection between the input side and output side of these two semiconductor chips and the input side child and the output terminal. In the semiconductor device, the two semiconductor chips are mounted at different distances from the input terminal and the output terminal, respectively, and The input side matching circuit and the output side matching circuit are configured such that phase differences between the two semiconductor chips with respect to the input side terminal and the output terminal are λg/4 and −λg/4, respectively, where the signal wavelength is λg. It is characterized by the fact that it is provided.

[Effect]

Since the semiconductor chips are mounted at different distances from the input side terminal and the output terminal, that is, the center lines of both semiconductor chips are shifted and separated from each other, it is possible to mount an FET chip with a gate width equal to or larger than the package width dimension A. can. In addition, the phase difference between both chips in the input-side matching circuit and the output-side matching circuit is λg/4 and -λg/4, so the phase difference generated in the input-output side matching circuit is canceled out and the matching condition is satisfied. Therefore, the output can be increased while sufficiently maintaining high frequency characteristics.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a plan view showing the main parts of an embodiment of the present invention, showing the arrangement of parts inside the package. Moreover, FIG. 2 is an equivalent circuit diagram thereof.

This embodiment includes a package 1 made of an alumina substrate having an input terminal 6 and an output terminal 7, and two GaAsMI semiconductor chips mounted on this package 1.
FET chips 5a and 5b made of ESFBT, and FET chips 5a and 5b made of ESFBT;
An input side matching circuit 2a and an output side matching circuit 3a are provided as strip lines on an alumina substrate between the input side and output side of the ET chips 5a and 5b and the input side terminal 6 and the output terminal 7, respectively. In the semiconductor device, which is a feature of the present invention, the FET chip 5
a and 5b are located at different distances from the input terminal 6 and the output terminal 7, respectively, that is, the distance between both chips is l.
The input side matching circuit 2a and the output side matching circuit 3a are mounted so that the phase difference between the FET chips 5a and 5b with respect to the input side terminal 6 and the output terminal 7, respectively, is λg, where the signal wavelength is λg. /4 and -λg/4.

Next, the operation of this embodiment will be explained using FIG. 2. The phase difference between FET chips 5a and 5b is λg/
4. By positioning the FET chips 5a and 5b so that the angle is -λg/4 on the output side, the waves reflected at the input sides of FET chips 5a and 5b produce a phase difference of λg/2 at point A in Fig. 2, so they cancel each other out. Regardless of the matching state of the FET chips 5a and 5b, it is possible to obtain a good impedance return loss when viewed from the outside of the element. Moreover, FET chip 5
A and 5b can be mounted with gate widths larger than 2 of the width dimension of package 1, and a semiconductor device with high frequency and high output can be obtained using a package with small dimensions.

〔Effect of the invention〕

As described above, according to the present invention, it is possible to realize a high frequency, high power semiconductor device using a small semiconductor package that can be used up to high frequencies, and the effects thereof are significant.

[Brief explanation of drawings]

FIG. 1 is a plan view showing one embodiment of the present invention. Figure 2 is its equivalent circuit diagram. FIG. 30 is a plan view showing a conventional example. 1... Package, 2.2a... Input side matching circuit,
3.3a-Output side matching circuit, 4a, 4b, 5a, 5b・
...FET chip, 6...input side child, 7...output terminal. 1: Pa-no-γ-n 2q: Input 1'J Tsuji Ken Aiguchi Takumi 3q: Out-n candle matching B path 5a, 5b: FET+7 pu 6: Input S-+ 7: Dezuki Gogo 1: B- Noboon 2; human flesh i rule beige match day calendar 3: output) rule 竫諺合日match 5 4a, 4b: F E T 'r, i pro: λ 力堝千 7: output distance separation i! -Example groove bottom effect 3 figure

Claims (1)

[Claims] 1. A package having an input terminal and an output terminal, two semiconductor chips mounted on this package, and input terminals provided between the input and output sides of these two semiconductor chips and the input and output terminals, respectively. In a semiconductor device including a side matching circuit and an output side matching circuit, the two semiconductor chips are mounted at different distances from the input terminal and the output terminal, and the input side matching circuit and the output side The side matching circuit is arranged so that the phase difference between the two semiconductor chips with respect to the input terminal and the output terminal respectively changes the wavelength of the signal by λg.
λg/4 and -λg/4.