JPH036033A - Bonding thin wire for semiconductor - Google Patents

Bonding thin wire for semiconductor

Info

Publication number
JPH036033A
JPH036033A JP1140715A JP14071589A JPH036033A JP H036033 A JPH036033 A JP H036033A JP 1140715 A JP1140715 A JP 1140715A JP 14071589 A JP14071589 A JP 14071589A JP H036033 A JPH036033 A JP H036033A
Authority
JP
Japan
Prior art keywords
ball
bonding
thin wire
iron
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1140715A
Other languages
Japanese (ja)
Other versions
JP2735882B2 (en
Inventor
Kohei Tatsumi
宏平 巽
Tomohiro Uno
智裕 宇野
Osamu Kitamura
修 北村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Priority to JP1140715A priority Critical patent/JP2735882B2/en
Publication of JPH036033A publication Critical patent/JPH036033A/en
Application granted granted Critical
Publication of JP2735882B2 publication Critical patent/JP2735882B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01007—Nitrogen [N]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To enhance a deformation ability of a ball and to restrain an electrode pad or a silicon chip from being damaged during a bonding operation by a method wherein iron of a very small amount is added to high-purity copper. CONSTITUTION:A content of iron in a bonding thin wire 2 is 0.005 to 0.08wt.%, preferably 0.0055 to 0.13wt.%. When the content of iron is 0.0005wt.% or lower, an effect to add iron is small and a deformation ability of a ball is not suffi cient. When the content exceeds 0.08wt.%, an influence of Fe which cannot be solid-dissolved in Cu and is precipitated becomes remarkable and the deforma tion ability of the ball 1 is lowered. It is preferable that metal impurities in the bonding thin wire is 0.001wt.% or lower in total and that gas impurities such as oxygen, nitrogen or the like is 0.001wt.% or lower in total. Thereby, the deformation ability of the ball 1 can be enhanced and the damage rate of semiconductor chips can be reduced.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は、半導体素子上の電極と外部リードとを接続す
る銅系ボンディング細線に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a thin copper-based bonding wire that connects electrodes on a semiconductor element and external leads.

（従来の技術） 現在一般的には、半導体チップの電極とリードフレーム
との接合には、線径Ｉ５〜１１００ｕ程度の金あるいは
金合金からなる金糸細線を用いたボールボンディングが
採用されている。すなわちポールボンディングは、細線
の先端をアーク放電などによって、ボールを形成させ、
そのボールを電極上に押し付けて接続する方法である。(Prior Art) Currently, ball bonding using a fine gold wire made of gold or a gold alloy with a wire diameter of about I5 to 1100 μm is generally used to bond the electrodes of a semiconductor chip and a lead frame. In other words, pole bonding involves forming a ball at the tip of a thin wire using arc discharge, etc.
This method connects the ball by pressing it onto the electrode.

この種のボンディング細線としては、導電性、細線の伸
び、細線の強度、接合部の信頼性、ボール形成性および
ボール変形能等が要求されており、従来から主に金糸細
線が多用されている。これは金糸細線が大気雰囲気中で
も真球に近い形状のボールになりやすく、また耐蝕性が
良好で変形能に優れているためである。This type of bonding thin wire is required to have good conductivity, elongation of the thin wire, strength of the thin wire, reliability of the joint, ball forming ability, ball deformability, etc., and conventionally, gold thread thin wire has been mainly used. . This is because the thin gold thread easily forms a ball with a shape close to a true sphere even in the air, and also has good corrosion resistance and excellent deformability.

しかし、素材である金が著しく高価であるばかりか、電
極パッドのアルミニウム合金と脆弱なＡｊＪ−Ａｕの金
属間化合物を形成するため、接合部の長期信頼性に問題
を残していた。However, not only is the material gold extremely expensive, but it also forms a fragile AjJ-Au intermetallic compound with the aluminum alloy of the electrode pad, leaving problems with the long-term reliability of the joint.

以上の背景から、金糸細線の替わりに安価で、かつ接合
部の長期信頼性が期待できる銅系ボンディング細線の適
用が各所で検討されており、例えば特開昭８０−１２４
９５９号公報に示されているように純度９９．９９重量
％以上の高純度銅からなるボンディング細線が提案され
ている。また銅系細線を用いた場合には、大気中では真
球のボールが得られず、また表面に酸化物を形成して接
合が困難になることから、不活性ガス雰囲気中、あるい
は還元ガス雰囲気中でボール形成が可能な銅細線用ボン
ディング装置が提案されている。From the above background, the application of copper-based bonding thin wire, which is inexpensive and can be expected to have long-term reliability in joints, is being considered in various places as an alternative to gold thread thin wire.
As shown in Japanese Patent No. 959, a fine bonding wire made of high-purity copper with a purity of 99.99% by weight or more has been proposed. In addition, when copper-based fine wire is used, it is difficult to obtain a true spherical ball in the atmosphere, and oxides form on the surface, making bonding difficult. A bonding device for thin copper wires that is capable of forming balls has been proposed.

ところが高純度銅を半導体用ボンディング細線として用
いる場合には、金糸細線で通常採用されているボンディ
ング条件で、高速ボンディングを行うと、ボール接合時
に電極パッドのアルミニウム薄膜を破壊したり、シリコ
ンチップにマイクロクラックを生じたりする場合がある
ため、信頼性に欠ける問題があった。この問題は銅素材
の高純化やボール形成雰囲気の改善だけでは完全に解決
できなかったため、銅系のボンディング細線は安価であ
るにもかかわらず、実用化が遅れていたと考えられる。However, when high-purity copper is used as a thin bonding wire for semiconductors, if high-speed bonding is performed under the bonding conditions normally used for thin gold wire, the aluminum thin film of the electrode pad may be destroyed during ball bonding, or microscopic particles may be formed on the silicon chip. There was a problem of lack of reliability as cracks may occur. This problem could not be completely solved by simply increasing the purity of the copper material or improving the ball forming atmosphere, and it is thought that the practical use of copper-based bonding thin wires was delayed, despite their low cost.

（発明が解決しようとする課題） 本発明の目的は、上記の問題点を解決するため、銅系ボ
ンディング細線のボール変形能を改善してボールボンデ
ィング時に発生するアルミニウム電極パッドの損傷やシ
リコンチップのマイクロクラック発生を抑制し、金糸細
線の代替として有用かつ実用可能な銅系ボンディング細
線を提供することにある。(Problems to be Solved by the Invention) In order to solve the above-mentioned problems, the purpose of the present invention is to improve the ball deformability of copper-based bonding thin wire, thereby preventing damage to aluminum electrode pads that occurs during ball bonding and preventing damage to silicon chips. The object of the present invention is to provide a copper-based bonding thin wire that suppresses the occurrence of microcracks and is useful and practical as a substitute for gold thread thin wires.

（課題を解決するための手段） 本発明は、Ｆｅを０．００５超〜０．１重量％含有し、
残部がＣｕからなることを特徴とする半導体用ボンディ
ング細線である。(Means for Solving the Problems) The present invention contains more than 0.005 to 0.1% by weight of Fe,
This is a thin bonding wire for semiconductors characterized in that the remainder is made of Cu.

銅系ボンディング細線のボールは、一般には金糸細線の
ボールと比較すると硬度が高く、また変形中の加工硬化
率も高い。本発明は高純度銅に微量の鉄を添加すること
によって、ボールの変形能を高め、接合時の電極パッド
あるいは、シリコンチップの損傷を抑制したものである
。Balls made of copper-based bonding fine wire generally have higher hardness than balls made of gold thread fine wire, and also have a higher rate of work hardening during deformation. The present invention improves the deformability of the ball by adding a small amount of iron to high-purity copper, thereby suppressing damage to the electrode pad or silicon chip during bonding.

銅系ボンディング細線におけるボールの硬度の上昇ある
いは変形能の低下の原因は、■銅素材中の異種原子の存
在によるもの、■ボール形成時に生じるボール中の欠陥
（例えば、格子欠陥やガス不純物）によるもの、■表面
の酸化物形成によるもの、等が挙げられる。The causes of an increase in ball hardness or a decrease in deformability in copper-based bonding thin wires are: - The presence of foreign atoms in the copper material; - Defects in the ball that occur during ball formation (for example, lattice defects and gas impurities) (1) due to the formation of oxides on the surface, etc.

本発明は、鉄原子を添加することによって、■の機構に
よる変形能低下を抑制し、総合的にボールの変形能を高
めていると考えられる。通常、合金元素の添加は■の機
構によりボールの変形能を低下させるため、合金元素添
加によって■あるいは■の原因に対処する場合にも、総
合的にボール変形能を高める効果を期待できなかった。In the present invention, by adding iron atoms, it is thought that the decrease in deformability caused by the mechanism (2) is suppressed and the deformability of the ball is improved overall. Normally, the addition of alloying elements reduces the deformability of the ball due to the mechanism described in (■), so even when the cause of (■) or (■) is addressed by adding alloying elements, it could not be expected to have the effect of increasing the deformability of the ball comprehensively. .

ところが本発明は鋼中の鉄の原子半径が銅のそれとほと
んど同じであり、■の機構による変形能の低下が当該添
加量の範囲ではほとんど無視できることに着眼したもの
である。特開昭８１−２７０６（ｉ号公報に示されてい
るようにＶ（バナジウム）、Ｍｎ（マンガン）、Ｔｉ（
チタン）などの遷移元素を添加した銅系のボンディング
細線が提案されているが、これらの元素はいずれもその
原子半径が銅の原子半径と大きく異なっており、鉄を添
加した場合と同様の変形能改善の効果は見られない。However, the present invention focuses on the fact that the atomic radius of iron in steel is almost the same as that of copper, and the decrease in deformability due to the mechanism (2) can be almost ignored within the range of the amount added. As shown in Japanese Patent Application Laid-open No. 81-2706 (I), V (vanadium), Mn (manganese), Ti (
Copper-based bonding fine wires doped with transition elements such as titanium (titanium) have been proposed, but the atomic radii of these elements are significantly different from the atomic radius of copper, resulting in the same deformation as when iron is added. No improvement in performance was observed.

本発明のボンディング細線における鉄の含有量は、０．
００５超〜０．０８重量％、好ましくは０．００５５〜
０．０３重量２６である。これは鉄の含有量が０．００
５重量％以下では鉄添加の効果が少なく、ボール変形能
が十分ではない。The iron content in the bonding thin wire of the present invention is 0.
More than 005 to 0.08% by weight, preferably 0.0055 to
0.03 weight 26. This has an iron content of 0.00
If it is less than 5% by weight, the effect of adding iron is small and the ball deformability is insufficient.

また０、０８重量％超では、Ｃｕ中に固溶できないで析
出するＦＣの影響が顕著となり、ボールの変形能が低下
するためである。Moreover, if it exceeds 0.08% by weight, the influence of FC which cannot be solidly dissolved in Cu and precipitates becomes significant, and the deformability of the ball decreases.

またボンディング細線中の不純物量は、ボールの変形能
を改善するＦｅの効果を高めるために、一般に市販され
ている無酸素銅中の不純物量より少ないことが必要で、
金属不純物は合計０．００１重量重量下、酸素、窒素等
のガス不純物は合計０．００１重ユ重量下であることが
好ましい。In addition, the amount of impurities in the bonding thin wire needs to be smaller than the amount of impurities in oxygen-free copper, which is generally commercially available, in order to enhance the effect of Fe that improves the deformability of the ball.
The total amount of metal impurities is preferably 0.001 weight or less, and the total amount of gaseous impurities such as oxygen and nitrogen is preferably 0.001 weight or less.

（実　施　例） 以下に実施例について説明する。(Example) Examples will be described below.

種々の組成の銅合金を高純度グラファイト坩堝中で真空
溶解し、内径５ｍｍの高純度グラファイト鋳型中に鋳造
した後、圧延、伸線、中間焼鈍の工程を経て直径２５ｔ
１ｍのボンディング細線を作成した。Copper alloys of various compositions are melted under vacuum in a high-purity graphite crucible, cast into a high-purity graphite mold with an inner diameter of 5 mm, and then subjected to rolling, wire drawing, and intermediate annealing processes to a diameter of 25 tons.
A 1 m long bonding wire was created.

なお中間焼鈍は１０−’Ｔｏｒｒ以下の真空中で行った
。Note that the intermediate annealing was performed in a vacuum of 10-' Torr or less.

得られた銅合金ボンディング細線の成分は第１表に示す
。なおボンディング細線中の不純物量は金属不純物、ガ
ス不純物共それぞれ０．０００５重量％以下であった。The components of the obtained copper alloy bonding thin wire are shown in Table 1. The amount of impurities in the bonding thin wire was 0.0005% by weight or less for both metal impurities and gas impurities.

比較例として鉄含有量が０．００５重量％以下のもの、
０．０８ｆｆｉｉ％を超えるもの、またＦｅ以外の遷移
元素であるＭｎを添加したものおよび高純度銅からなる
ボンディング細線を作成した。As a comparative example, one with an iron content of 0.005% by weight or less,
Bonding thin wires made of wires containing more than 0.08ffii%, those to which Mn, which is a transition element other than Fe, was added, and high-purity copper were prepared.

それぞれの細線のボールの変形能を以下に説明する方法
で測定した。第１図に示すように平行な２枚のダイヤモ
ンドの平板の間に、先端にボール１を作成したボンディ
ング細線２を水平に設置し、下側の平板３を固定し、上
ＩＪＩＩの圧縮用平板４を一定速度で降下させボールを
圧縮変形させた。そのときの荷重と上側の平板の変位（
△Ｘ）を測定した。変形能を評洒するにあたっては１０
０ｇの荷重下での変位量で比較した。The deformability of each thin wire ball was measured by the method described below. As shown in Figure 1, a thin bonding wire 2 with a ball 1 at its tip is installed horizontally between two parallel diamond plates, the lower flat plate 3 is fixed, and the upper IJII compression flat plate is 4 was lowered at a constant speed to compress and deform the ball. At that time, the load and the displacement of the upper flat plate (
ΔX) was measured. 10 when evaluating deformability
A comparison was made using the amount of displacement under a load of 0g.

なおボール形成はＡｒ雰囲気中で行い、ボールの直径は
７５ｔｓのものを用いて測定した。The ball was formed in an Ar atmosphere, and the diameter of the ball was 75ts.

熱圧着、超音波併用法によりボンディングを行い、ボン
ディング後のチップの損傷率を測定した。Bonding was performed using a combination of thermocompression bonding and ultrasonic waves, and the damage rate of the chip after bonding was measured.

またボール形成性については真球が得られるものをＱで
あられし、ややいびつになるものは△であられした。測
定結果を第２表に示す。ボンディング細線として必要な
その他の特性すなわち導電性、細線の伸び、細線の強度
、接合部強度についてはいずれも従来使用されている金
糸細線と同等かもしくは、より優れたものであった。Regarding ball forming properties, those that yielded a perfect ball were rated Q, and those that were slightly distorted were rated △. The measurement results are shown in Table 2. The other properties necessary for a bonding thin wire, namely conductivity, elongation of the thin wire, strength of the thin wire, and joint strength, were all equivalent to or better than the conventionally used thin gold thread wire.

第　　　１　　　表 第　　　２　　　表 用ボンディング細線を提供するものである。本発明によ
り銅系ボンディング細線を実用化す８にあたって、その
信頼性を著しく向上させている。This provides bonding thin wires for Tables 1 and 2. In putting the copper-based bonding thin wire into practical use according to the present invention, its reliability has been significantly improved.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は、ボール変形能を評価するためのボール圧縮試験
装置の模式図である。 １・・・ボール　　　　　　２・・・ボンディング細線
３・・・平板（下側）　　　４・・・圧縮用平板（上側
）復代理人　弁理士　１）村弘　明 （発明の効果）The drawing is a schematic diagram of a ball compression test device for evaluating ball deformability. 1... Ball 2... Bonding thin wire 3... Flat plate (lower side) 4... Flat plate for compression (upper side) Sub-agent Patent attorney 1) Akira Murahiro (effects of the invention)

Claims (3)

【特許請求の範囲】[Claims] （１）Ｆｅを０．００５超〜０．０８重量％含有し、残
部がＣｕからなることを特徴とする半導体用ボンディン
グ細線。(1) A thin bonding wire for a semiconductor, characterized in that it contains more than 0.005 to 0.08% by weight of Fe, with the remainder being Cu. （２）金属不純物量が０．００１重量％以下である請求
項１記載の半導体ボンディング細線。(2) The semiconductor bonding thin wire according to claim 1, wherein the amount of metal impurities is 0.001% by weight or less. （３）ガス不純物量が０．００１重量％以下である請求
項１または２記載の半導体ボンディング細線。(3) The semiconductor bonding thin wire according to claim 1 or 2, wherein the amount of gas impurities is 0.001% by weight or less.
JP1140715A 1989-06-02 1989-06-02 Bonding wire for semiconductor Expired - Lifetime JP2735882B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1140715A JP2735882B2 (en) 1989-06-02 1989-06-02 Bonding wire for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1140715A JP2735882B2 (en) 1989-06-02 1989-06-02 Bonding wire for semiconductor

Publications (2)

Publication Number Publication Date
JPH036033A true JPH036033A (en) 1991-01-11
JP2735882B2 JP2735882B2 (en) 1998-04-02

Family

ID=15275028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1140715A Expired - Lifetime JP2735882B2 (en) 1989-06-02 1989-06-02 Bonding wire for semiconductor

Country Status (1)

Country Link
JP (1) JP2735882B2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61113740A (en) * 1984-11-09 1986-05-31 Tanaka Denshi Kogyo Kk Bonding use copper wire of semiconductor element
JPS63235442A (en) * 1987-03-24 1988-09-30 Furukawa Electric Co Ltd:The Fine copper wire and its production

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61113740A (en) * 1984-11-09 1986-05-31 Tanaka Denshi Kogyo Kk Bonding use copper wire of semiconductor element
JPS63235442A (en) * 1987-03-24 1988-09-30 Furukawa Electric Co Ltd:The Fine copper wire and its production

Also Published As

Publication number Publication date
JP2735882B2 (en) 1998-04-02

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