JPH0360025A - Manufacturing device of thin film - Google Patents

Abstract

PURPOSE:To improve crystallinity of a formed thin film by irradiating constitu ent atomic ion of inert gas from an ion gun to the thin film formed on a sub strate by constituent atomic ion of inert gas which is ionized by inert gas constit uent atomic ion. CONSTITUTION:Ar gas is introduced inside a cavity 3 through a first gas tube 5; microwave is applied to the Ar gas through a waveguide tube 4 and a current is made to flow to a coil 8 simultaneously; Ar is partially ionized to make the plasma condition wherein Ar atom and Ar<+> and e<-> are included; Ar<+> is made to proceed toward a film formation chamber 1 by an operation of a magnetic field and to project inside the film formation chamber 1 receiving absorption force by an electric field of a grid 9. At the same time, SiH4 gas is introduced from a second gas tube 12 to the film formation chamber 1 to be decomposed to Si<+> and H<+> by Ar<+>. The decomposed Si<+> is irradiated to a substrate 2 inside the film formation chamber 1 and a thin film of Si is lami nated on a surface of the substrate 2.

Description

DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to an apparatus for manufacturing a thin film of a semiconductor such as silicon, and relates to a crystallization technique of the above.

(b) Conventional technology For example, Japanese Patent Application Laid-open No. 64-271 discloses a vacuum vessel having a film forming chamber inside, an electron cyclotron resonance ion source connected to the vacuum vessel, a support holding means, and an electronic device described in 1 Jij. An electron cyclotron resonance type (hereinafter referred to as ECR) plasma CVD system comprising a microwave generation source connected to a cyclotron source, an exhaust means for evacuating the vacuum container, and a gas supply means; , characterized in that the ion source is arranged in a ring so as to be parallel to the direction of plasma extraction from the ion source, and a magnet is added to the support holding means so as to form a magnetic field that coincides with the direction of plasma extraction. A microwave plasma CVD apparatus is disclosed.

Although the deposited film formed on the surface of the support in this example has a uniform thickness and can be formed in a homogeneous layer 1a + vaguely, the formed film contains many amorphous parts, has a poor crystal ratio, and has a large area. There was a problem in that it was not possible to grow a film of

(c) Problems to be Solved by the Invention The problems to be solved by the present invention are that when forming a desired thin film by plasma CVD using an ECR ion source,
The objective is to improve the crystallinity of the formed thin film.

(d) Means for Solving the Problems The present invention provides an ECR ion source that turns an inert gas into a plasma state using microwaves, ionizes and releases constituent atoms of the gas, and ionizes the constituent atoms of the inert gas. At the same time, a reactive gas is introduced which is decomposed by the constituent atomic ions into ions different from the above ions, and a thin film of atoms is formed on the inner substrate to form a groove bottom of the reactive gas! & a film chamber, and an ion gun that ionizes an inert gas that is the same as or different from the inert gas and irradiates the substrate with its constituent atomic ions to promote crystallization of the thin film formed on the surface of the substrate. , consists of.

(E) Effect Iζ An ion gun is applied to a thin film formed on a substrate by the FR precept atomic ions of an inert gas from the CR ion source and the constituent atoms/ions of the reactive gas ionized by the inert gas flir & atomic ions. When irradiated with h11 atomic ions of an inert gas, crystallization of the amorphous portion of the thin film is promoted.

(f) Example The apparatus for manufacturing a thin film of the present invention will be described in detail below with reference to an example of the drawings.

FIG. 1 shows a schematic cross-sectional view of the apparatus of the present invention, in which (1) is a metal film forming chamber in which a substrate (2) made of glass or metal is placed, (3) is the film forming chamber ( 1) is an ECR cavity provided adjacent to the cavity (3);
(5) is a first gas pipe that sends an inert gas such as Ar or Hl (Ar in the figure) as an excitation gas to the cavity (3); (6) is a first gas pipe that sends the microwave to the cavity (3); (3) is a cooling pipe that sends cooling water 11.0 to the space (7) formed between the inner layers; (8) is an electromagnetic coil installed around the outer circumference of the cavity (3); 3) to apply a Lorentz force to the Ar gas ions (Ar + ) or electrons (e-) excited by the microwave in the chamber, causing them to rotate and advance toward the film forming chamber (1). be.

The cavity (3), the waveguide W (4), the coil (
8), the first gas pipe (5) constitutes an ECR ion source.

(9) is a grid disposed at the boundary between the cavity (3) and the film forming chamber (1), and by applying a negative potential to the grid (9), the advancing speed of the Ar ions can be increased. Further, (10) is a hollow cathode type ion gun (diameter 3 crn) which is installed on the - side of the film forming chamber (1) and irradiates the substrate (2) in the film forming chamber (1) with an ion beam.
The ion gun (10) has a filament means (11), and Ar gas introduced from the first gas pipe (5) and Ar gas introduced from the second gas pipe (12). Formulas r+ and S from silane gas (Si11.), respectively.
It plays the role of creating i+ and irradiating the substrate (2)l) in the film forming chamber (1). Further, the second gas pipe (12
) can also directly supply silane gas to the membrane chamber (1).

S using a thin film manufacturing apparatus having the following FIirR.
The length L when forming a thin film of i will be explained below.

Approximately 23 CCM of Ar gas is introduced into the cavity (3) through the ml gas pipe (5), and the Ar gas in the cavity (3) is
When microwaves are applied to the gas through the waveguide (4) and at the same time a current is applied to the coil (8) to form a magnetic field in the cavity (3), part of the Ar is ionized and becomes Ar atoms and Ar atoms. A plasma state is formed in which ``,'', and
).

Then, under the attractive force of the electric field of the grid (9), the ^r+ was accelerated to an energy of about 20 eV, which is low enough to not damage the film formed on the substrate (2) in the film forming chamber (1). Jump out in a state.

At the same time, a second gas pipe (12) is connected to the film forming chamber (1).
From S i It , approximately 4 SCCM of gas is introduced as it is, and Ar'' hits this S i H* and decomposes it into S particles 114 .

Then, the decomposed Si″l is transferred to the substrate (
2), and a thin film of Si is deposited on the surface of the substrate (2) at a deposition rate of about 1100 n/min.

Note that the above Ar+ is I+, which is unnecessary for single crystallization of Si.
It also plays the role of repelling the particles far away from the board (2).

By the way, the 8r+ irradiated from the 1U cavity (3)
The energy of The crystallization rate is extremely poor.

Therefore, in order to further advance the degree of crystallization, high energy (approximately 100-100
The 5iit9 film on the substrate (2) is irradiated with ^r+ of 0 eV), and the 5iR1I film is bombarded with ions by ^r1.

By using this method, it is possible to promote the crystallization of a Si thin film containing a large amount of amorphous portions.

As a result, (111
) A crystallized Si thin film with excellent plane orientation can be obtained.

1'l! 6. In addition to the silicon compounds such as the above-mentioned 5ill+, nitrogen compounds such as N1, and hydrocarbon compounds such as C11 can be arbitrarily selected and used as reactive gases to form different thin films.

Further, the hollow cathode ion gun (10) is equipped with, for example, S.
i tl * is supplied to the hollow cathode ion gun (1
0) at an acceleration voltage of 1 kcV and an ion current density of about 10 mA/cm'' to form a thin film on the substrate (2), and at the same time the same ion gun (10)
A crystallized thin film can also be formed without using an ECR ion source by irradiating the thin film on the surface of the substrate (2) with high energy ^r4.

(G) Effects of the Invention As explained above, the present invention provides an ECR ion source that converts an inert gas into a plasma state using microwaves, ionizes and releases constituent atoms of the gas, and an ECR ion source that ionizes and releases the constituent atoms of the inert gas. a film forming chamber in which a reactive gas is introduced and decomposed into ions different from the ions by the constituent atomic ions, and a thin film of atoms constituting the reactive gas is formed on the substrate therein; A thin film manufacturing apparatus comprising: an ion gun that ionizes an inert gas that is the same as or different from the gas and irradiates the substrate with HR atomic ions to promote crystallization of the thin film formed on the surface of the substrate. Therefore, by forming thin films using this device, it is possible to promote the crystallization of thin films that conventionally had poor crystallinity, and it is possible to obtain high-quality nuclei for crystal growth of large-area thin films. The effect is created.

[Brief explanation of drawings]

FIG. 1 is a schematic cross-sectional view showing one embodiment of the thin film manufacturing apparatus of the present invention, and FIG. 2 is a cross-sectional view of the thin film formed using the apparatus shown in FIG.
It is a line diffraction diagram. (1)...Film forming chamber, (2)...Substrate, (3
)... ECR cavity, (4)... Microwave waveguide, (5)... First gas pipe, (12)... Second gas pipe, (10)... Holocathode ion gun.

Claims (1)

[Claims] (1) An ECR ion source that converts an inert gas into a plasma state using microwaves, ionizes and releases the constituent atoms of the gas, and introduces the constituent atomic ions of the inert gas, and the constituent atomic ions that form the ions. a film forming chamber that introduces a reactive gas that is decomposed into different ions and forms a thin film of atoms constituting the reactive gas on an internal substrate;
an ion gun that ionizes an inert gas that is the same as or different from the inert gas and irradiates the substrate with its constituent atomic ions to promote crystallization of the thin film formed on the surface of the substrate; Manufacturing equipment.