JPH0359609B2 - - Google Patents

Info

Publication number
JPH0359609B2
JPH0359609B2 JP55023060A JP2306080A JPH0359609B2 JP H0359609 B2 JPH0359609 B2 JP H0359609B2 JP 55023060 A JP55023060 A JP 55023060A JP 2306080 A JP2306080 A JP 2306080A JP H0359609 B2 JPH0359609 B2 JP H0359609B2
Authority
JP
Japan
Prior art keywords
transistor
base
output
level
supplied
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55023060A
Other languages
Japanese (ja)
Other versions
JPS56119531A (en
Inventor
Masayuki Komon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2306080A priority Critical patent/JPS56119531A/en
Publication of JPS56119531A publication Critical patent/JPS56119531A/en
Publication of JPH0359609B2 publication Critical patent/JPH0359609B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175Coupling arrangements; Interface arrangements
    • H03K19/018Coupling arrangements; Interface arrangements using bipolar transistors only
    • H03K19/01806Interface arrangements
    • H03K19/01812Interface arrangements with at least one differential stage
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003Modifications for increasing the reliability for protection
    • H03K19/00307Modifications for increasing the reliability for protection in bipolar transistor circuits

Description

【発明の詳細な説明】 本発明は、CMLレベルをTTLレベル等の正レ
ベルに変換するレベル変換回路特にその出力短絡
保護回路に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a level conversion circuit that converts a CML level to a positive level such as a TTL level, and particularly to an output short-circuit protection circuit thereof.

CML(カレント モード ロジツク)レベルは
H(ハイ)、L(ロー)両レベルとも負電位で且つ
小振幅であるためTTL(トランジスタ トランジ
スタロジツク)等の正レベル論理回路と直接接続
することはできない。このため両者の接続又は交
換を行なうにはCMLレベルをTTLレベルに変換
するレベル変換回路が必要になる。この種の回路
は一般にCMLエベルを一方の入力とし且つ正負
両電源で動作するカレントスイツチと、その一方
の出力を受けそして正および接地電位の2値レベ
ルを出力する出力段のエミツタホロワトランジス
タを要部として構成される。ところがこの回路に
は出力段のトランジスタのエミツタ、従つて出力
端子がHレベル出力状態のときに接地電位に短絡
される事故が起ると過電流が流れて該トランジス
タが熱破壊される欠点がある。
Since both the H (high) and L (low) levels of the CML (current mode logic) level are negative potentials and have small amplitudes, they cannot be directly connected to a positive level logic circuit such as TTL (transistor logic). Therefore, in order to connect or exchange the two, a level conversion circuit that converts the CML level to the TTL level is required. This type of circuit generally consists of a current switch that takes the CML level as one input and operates on both positive and negative power supplies, and an emitter follower transistor in the output stage that receives one output and outputs a binary level of positive and ground potentials. It is composed of the main parts. However, this circuit has the disadvantage that if an accident occurs where the emitter of the transistor in the output stage, and therefore the output terminal, is shorted to ground potential while in the H level output state, an overcurrent will flow and the transistor will be thermally destroyed. .

本発明はこの点を改善するために出力短絡保護
回路を設けたものであるが、以下図示の実施例を
参照しながらこれを詳細に説明する。
The present invention provides an output short-circuit protection circuit to improve this point, and this will be explained in detail below with reference to the illustrated embodiments.

第1図は本発明の一実施例を示す回路図で、
T1,T2はカレントスイツチ(差動増幅器)1の
要部となる一対のトランジスタである。トランジ
スタT1,T2のエミツタは共通接続され、更に定
電流源J1を介して負電源−VEEに接続される。ト
ランジスタT2のベースには基準電圧VBB(−1.3V)
が供給され、且つトランジスタT1のベースには
CMLモードの入力VIN(H=−0.8V、L=−
1.7V)が供給される。そしてトランジスタT1
T2の各コレクタは負荷抵抗R1,R2を通して正電
源+VCCに接続される。一般的なレベル変換回路
ではカレントスイツチ1の一方に出力例えばN1
を出力段のトランジスタT3に与えてそのエミツ
タ、従つて出力端子2からTTLレベルの出力
VOUTを取り出す。例えばVIN=−0.8Vであるとト
ランジスタT1がオン、T2がオフで出力端子2へ
は+VCC−R1−T3の経路でトランジスタT3のベ
ース、エミツタ間を通して電流が流れ、該トラン
ジスタT3がオンになつて VOUTVCC−VBE3 ……(1) となる。これはTTLモードのHレベルであり、
正レベルである。尚VBE3はトランジスタT3のベ
ース、エミツタ間電位である。またVIN=−1.7V
であるとトランジスタT1がオフ、T2がオンにな
つて抵抗R1に電流J1が流れるので VOUTVCC−R1J1−VBE3 ……(2) となる。これはTTLモードのLレベルであり、
一般には0Vに設計される。そこで仮に出力端子
2が接地電位GNDへ短絡されることがあつても
トランジスタT3に過電流が流れることはない。
しかし、VOUTが上記レベルであるときに出力端
子2が接地電位に短絡されると、電源+VCCから
トランジスタT3のコレクタ、エミツタ間を通し
て出力端子2に無制限な電流が流れようとするの
で、この過電流のためにトランジスタT3が熱破
壊される。
FIG. 1 is a circuit diagram showing an embodiment of the present invention.
T 1 and T 2 are a pair of transistors that form the main parts of the current switch (differential amplifier) 1. The emitters of transistors T 1 and T 2 are commonly connected and further connected to a negative power supply -V EE via a constant current source J 1 . The base of transistor T 2 has a reference voltage V BB (−1.3V)
is supplied, and the base of transistor T1 is
CML mode input V IN (H=-0.8V, L=-
1.7V) is supplied. and transistor T 1 ,
Each collector of T 2 is connected to the positive power supply +V CC through load resistors R 1 and R 2 . In a general level conversion circuit, the output is output to one side of current switch 1, for example, N 1
is applied to the output stage transistor T3 , and the TTL level output is output from its emitter, and therefore output terminal 2.
Take out V OUT . For example, when V IN = -0.8V, transistor T 1 is on and T 2 is off, and current flows to output terminal 2 through the base and emitter of transistor T 3 along the path +V CC -R 1 -T 3 . The transistor T 3 is turned on and V OUT V CC −V BE3 . . . (1). This is the H level in TTL mode,
It is at a positive level. Note that V BE3 is the potential between the base and emitter of the transistor T3 . Also, V IN = −1.7V
Then, transistor T 1 is turned off, T 2 is turned on, and current J 1 flows through resistor R 1 , so that V OUT V CC −R 1 J 1 −V BE3 ……(2). This is the L level of TTL mode,
Generally designed to be 0V. Therefore, even if the output terminal 2 is short-circuited to the ground potential GND, no overcurrent will flow through the transistor T3 .
However, if output terminal 2 is short-circuited to ground potential when V OUT is at the above level, an unlimited current will flow from the power supply +V CC to output terminal 2 through the collector and emitter of transistor T 3 . Transistor T3 is thermally destroyed due to this overcurrent.

本発明ではこの点を防止するために、トランジ
スタT4,T5、抵抗R3,R4およびダイオードDnか
らなる出力短絡保護回路3を設ける。トランジス
タT4の保護用であり、そのコレクタ、エミツタ
をトランジスタT3のベース、エミツタにそれぞ
れ接続する。電源+VCCと接地電位GNDとの間に
直列接続された抵抗R3,R4と1もしくは複数の
ダイオードDn(これは他の定電圧素子、例えばツ
エナーダイオード等でもよく、また温度補償を考
えなければ抵抗でもよい)はバイアス回路4を構
成し、抵抗R3,R4の接続点電位VXをトランジス
タT4のベースへ印加する。トランジスタT5はバ
イアス電圧切換用であり、そのコレクタおよびエ
ミツタをトランジスタT4のベースおよび接地電
位GNDはそれぞれ接続する。抵抗R2は前述した
トランジスタT1の負荷であり、これによるカレ
ントスイツチ1の他方の出力N2でトランジスタ
T5のベース電位を制御する。
In order to prevent this problem, the present invention provides an output short-circuit protection circuit 3 consisting of transistors T 4 and T 5 , resistors R 3 and R 4 and a diode Dn. It is for protection of transistor T4 , and its collector and emitter are connected to the base and emitter of transistor T3 , respectively. Resistors R 3 and R 4 and one or more diodes Dn are connected in series between the power supply +V CC and the ground potential GND (this may be another constant voltage element, such as a Zener diode, etc., and temperature compensation must be considered. (for example, a resistor may be used) constitutes a bias circuit 4, which applies the potential VX at the connection point between the resistors R3 and R4 to the base of the transistor T4 . The transistor T5 is for bias voltage switching, and its collector and emitter are connected to the base of the transistor T4 and the ground potential GND, respectively. The resistor R 2 is the load of the transistor T 1 mentioned above, and the other output N 2 of the current switch 1 is connected to the transistor T 1.
Control the base potential of T5 .

上記構成によればVINがCMLレベルのH(−
0.8V)でトランジスタT1がオンになると前述し
たように出力段のトランジスタT3のベース、エ
ミツタを通して電流が流れ、VOUTは(1)式に示す
TTLレベルのHになる。この時N2点の電位は低
くトランジスタT5はオフであるから、トランジ
スタT4のベースへはバイアス回路4の分圧比で
定まる電圧VXが印加される。この電圧はVX
VCC−VBE3であるからこの時点ではトランジスタ
T4はオフで、トランジスタT3の動作に影響を与
えない。しかし、出力端子2が接地電位GNDに
短絡されるとトランジスタT3,T4のエミツタが
接地されるのでこれらは急激に完全オン領域へ移
行しようとする。トランジスタT3が完全にオン
すると+VCC−T3−2の経路で無制限な電流が流
れようとするか、このときトランジスタT4がオ
ンになつてそのコレクタ電流がVCC−R1−T4の経
路で供給されることにより、トランジスタT3
ベース電流は急激に減少し、遂にオン状態を維持
できなくなる。このためトランジスタT3が熱破
壊するが防止される。尚、トランジスタT4に流
れる電流は抵抗R1により制限されているので、
トランジスタT4で破壊される恐れはない。
According to the above configuration, V IN is at CML level H(-
0.8V), when transistor T 1 is turned on, current flows through the base and emitter of output stage transistor T 3 as described above, and V OUT is shown in equation (1).
It becomes H at TTL level. At this time, the potential at the point N2 is low and the transistor T5 is off, so the voltage VX determined by the voltage division ratio of the bias circuit 4 is applied to the base of the transistor T4. This voltage is V
Since V CC −V BE3 , at this point the transistor
T 4 is off and does not affect the operation of transistor T 3 . However, when the output terminal 2 is short-circuited to the ground potential GND, the emitters of the transistors T 3 and T 4 are grounded, so that they suddenly try to shift to the completely on region. If transistor T 3 is completely turned on, an unlimited current will flow along the path +V CC −T 3 −2, or at this time, transistor T 4 will be turned on and its collector current will be V CC −R 1 −T 4 As a result, the base current of the transistor T3 decreases rapidly, and finally it becomes unable to maintain the on state. Therefore, thermal breakdown of the transistor T3 is prevented. Furthermore, since the current flowing through the transistor T 4 is limited by the resistor R 1 ,
There is no risk of destruction with transistor T 4 .

一方、VINがCMLレベルのL(−1.7V)のとき
はトランジスタT1がオフ、T2がオンであつて出
力VOUTは前記(2)式で示すTTLレベルのLになる。
この値は通常0Vであるからそのベース電位が前
記のVXであればトランジスタT4がオンになりト
ランジスタT3の動作を防げる(VOUTがLからH
へ移行できない)。しかし、本回路ではこの時は
N2点の電位が高く従つてトランジスタT5がオン
になるので、トランジスタT4のベースは強制的
に接地され、他の条件によらずトランジスタT4
はオフ状態を維持する。このためトランジスタ
T3の動作に支障はない。
On the other hand, when V IN is at the CML level L (-1.7V), the transistor T 1 is off and T 2 is on, and the output V OUT is at the TTL level L shown in equation (2) above.
This value is normally 0V , so if its base potential is the above -mentioned V
cannot be migrated to). However, in this circuit, at this time
Since the potential at point N2 is high and therefore transistor T5 is turned on, the base of transistor T4 is forcibly grounded, regardless of other conditions.
remains off. For this reason the transistor
There is no problem with the operation of T3 .

以上述べたように本発明によれば、簡単な回路
構成でレベル変換回路出力段の短絡事故による素
子破壊を防止できる利点がある。尚、このレベル
変換回路はCMLレベルを適宜の正レベルに変換
でき、正レベルとしてはTTLレベルに限る、も
のではない。
As described above, the present invention has the advantage of being able to prevent element destruction due to short-circuit accidents in the output stage of the level conversion circuit with a simple circuit configuration. Note that this level conversion circuit can convert the CML level to an appropriate positive level, and the positive level is not limited to the TTL level.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示す回路図であ
る。 図中、1は差動増幅器、2は出力端子、3は出
力短絡保護回路、4はバイアス回路、T3は出力
段のトランジスタ、T4は保護用トランジスタ、
T5はバイアス電圧切換用トランジスタである。
FIG. 1 is a circuit diagram showing an embodiment of the present invention. In the figure, 1 is a differential amplifier, 2 is an output terminal, 3 is an output short circuit protection circuit, 4 is a bias circuit, T3 is an output stage transistor, T4 is a protection transistor,
T5 is a bias voltage switching transistor.

Claims (1)

【特許請求の範囲】[Claims] 1 エミツタを共通接続した一対のトランジスタ
からなり、そして各コレクタがそれぞれ負荷抵抗
を介して正電源に接続され、且つ共通接続された
エミツタが定電流源を介して負電源に接続され、
さらに一方のベースに負の基準電圧が、また他方
のベースにCMLレベルの入力が供給される差動
増幅器1と、該一対のトランジスタのうち一方の
トランジスタのコレクタに出力される該差動増幅
器の一方の出力レベルがベースに供給され、そし
て正電源に直接コレクタが接続され出力端子にエ
ミツタが接続されて高レベルおよび低レベルの2
値レベルを出力する出力段のトランジスタT3と、
該出力段のトランジスタのベース、エミツタにそ
れぞれコレクタ、エミツタを接続した保護用トラ
ンジスタT4と、正電源と接地電位間に直列に接
続された抵抗および定電圧素子からなりそして該
保護用トランジスタのベースにバイアス電圧を与
えるバイアス回路4と、前記差動増幅器の他方の
出力レベルがベースに供給され、そして該保護用
トランジスタのベースと接地電位にそれぞれコレ
クタ、エミツタを接続してなる該保護用トランジ
スタのバイアス電圧切換用トランジスタT5とを
備えてなり、前記出力端子が高レベル時に該出力
端子が接地電位側に短絡した時、該正電源から負
荷抵抗R1と保護用トランジスタT4とを介して該
出力端子に短絡電流を供給し出力段のトランジス
タを保護するようにしたことを特徴とする、出力
短絡保護回路を備えたレベル変換回路。
1 Consists of a pair of transistors whose emitters are commonly connected, each collector is connected to a positive power supply via a load resistor, and the commonly connected emitters are connected to a negative power supply via a constant current source,
Further, there is a differential amplifier 1 to which a negative reference voltage is supplied to one base and a CML level input to the other base, and a differential amplifier 1 whose output is supplied to the collector of one of the pair of transistors. One output level is supplied to the base, and the collector is connected directly to the positive power supply and the emitter is connected to the output terminal to provide high and low levels.
an output stage transistor T3 that outputs a value level;
It consists of a protection transistor T4 whose collector and emitter are respectively connected to the base and emitter of the output stage transistor, a resistor and a constant voltage element connected in series between the positive power supply and the ground potential, and the base of the protection transistor. a bias circuit 4 which applies a bias voltage to the differential amplifier; the output level of the other differential amplifier is supplied to the base; and the collector and emitter of the protective transistor are connected to the base and ground potential of the protective transistor, respectively. A bias voltage switching transistor T5 is provided, and when the output terminal is short-circuited to the ground potential side when the output terminal is at a high level, the voltage is supplied from the positive power supply through the load resistor R1 and the protective transistor T4 . 1. A level conversion circuit equipped with an output short-circuit protection circuit, characterized in that a short-circuit current is supplied to the output terminal to protect a transistor in an output stage.
JP2306080A 1980-02-26 1980-02-26 Level converting circuit Granted JPS56119531A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2306080A JPS56119531A (en) 1980-02-26 1980-02-26 Level converting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2306080A JPS56119531A (en) 1980-02-26 1980-02-26 Level converting circuit

Publications (2)

Publication Number Publication Date
JPS56119531A JPS56119531A (en) 1981-09-19
JPH0359609B2 true JPH0359609B2 (en) 1991-09-11

Family

ID=12099878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2306080A Granted JPS56119531A (en) 1980-02-26 1980-02-26 Level converting circuit

Country Status (1)

Country Link
JP (1) JPS56119531A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4525836A (en) * 1982-12-27 1985-06-25 The Grass Valley Group, Inc. Circuit for converting a logical signal into two balanced logical signals
JP2646786B2 (en) * 1990-02-27 1997-08-27 日本電気株式会社 Semiconductor output circuit
JP2674344B2 (en) * 1991-03-12 1997-11-12 日本電気株式会社 Level conversion circuit

Also Published As

Publication number Publication date
JPS56119531A (en) 1981-09-19

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