JPH0356674A - Vessel consisting of thermally decomposed boron nitride - Google Patents
Vessel consisting of thermally decomposed boron nitrideInfo
- Publication number
- JPH0356674A JPH0356674A JP19016589A JP19016589A JPH0356674A JP H0356674 A JPH0356674 A JP H0356674A JP 19016589 A JP19016589 A JP 19016589A JP 19016589 A JP19016589 A JP 19016589A JP H0356674 A JPH0356674 A JP H0356674A
- Authority
- JP
- Japan
- Prior art keywords
- boron nitride
- density
- layers
- pyrolytic boron
- thermally decomposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 229910052582 BN Inorganic materials 0.000 title abstract description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract description 7
- 239000013078 crystal Substances 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000007740 vapor deposition Methods 0.000 abstract description 6
- 238000010030 laminating Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 abstract description 4
- 229910021529 ammonia Inorganic materials 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- -1 gallium-arsenic Chemical class 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 150000001639 boron compounds Chemical class 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000009612 ping-wei Substances 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は熱分解窒化ほう素容器、特には局部破壊などを
起り難くした、したがって寿命の長い、金属蒸着用また
はＭＢＥ用セル、ガリウムー砒素などの単結晶製造用る
つぼ、ボートとして有用とされる熱分解窒化ほう素容器
に関するものである。Detailed Description of the Invention (Industrial Field of Application) The present invention relates to a pyrolytic boron nitride container, particularly a cell for metal deposition or MBE, which is less prone to local breakage, and therefore has a long life, and a cell for gallium-arsenic, etc. This invention relates to a pyrolytic boron nitride container useful as a crucible or boat for producing single crystals.
（従来の技術）
熱分解窒化ほう素容器は三塩化ほう素（ＢＣｕ３）など
のほう素化合物とアンモニアとを原料とし、これらを高
温下に減圧で熱分解窒化ほう素とし、これを黒鉛、グラ
フアイトなどの表面にくＣ面〉方向に蒸着させ、またさ
らにこれをその表面から引剥すことによって製造されて
いる。(Prior art) A pyrolytic boron nitride container uses a boron compound such as boron trichloride (BCu3) and ammonia as raw materials, converts these into pyrolytic boron nitride under reduced pressure at high temperature, and converts this into graphite and graphite. It is produced by depositing it on the surface of an atom, etc., in the C-plane direction, and then peeling it off from the surface.
しかして、このようにして作られた耐熱容器は金属蒸着
用あるいはＭＢＥ用セル、ガリウムー砒素などのような
ＩＩＩ − Ｖ族化合物単結晶製造用るつぼ、ボートと
して用いられているが、これらの用途は使用温度が極め
て高温であるために室温にまで冷却されたときの内容物
の収縮変化が大きく、一方、熱分解窒化ほう素が成長方
向に垂直な（Ｃ面）に高度に配向しているためにくＣ面
〉方向に剥離し易いため、この方向に破壊し易いという
欠点がる．
（発明が解決しようとする課題）
そのため、この種の熱分解窒化ほう素容器について、本
発明者らはさきにこの密度の高い層とこれより密度の低
い層とを少なくとも２Ｆｌ交互辷設けて応力を緩和する
多層構造の耐熱容器を提案した（特開昭６１−２８８４
４２号公報参照）が、このものはこれを例えばガリウム
ー砒素などのようなＩＩＩ −Ｖ族化合物の引上げ用る
つぼとして使用すると、多層構造としないものに比べて
その密度は軽いというものの使用中にクラックやピンホ
ールあるいは局部剥離が生じてしまうために数１０回し
か使用できないという問題点のあることが判った．（課
題を解決するための手綾）
本発明はこのような不利を解決した熱分Ｍ窒化ほう素容
器に関するもので、これは高密度層と低密度層とを少な
くとも２層交互に設けてなり、かつ各層の厚みが１〜２
０μｍであることを特徴とするものである．
すなわち、本発明者らは熱分解窒化ほう素容器の寿命を
延長する方法について種々検討した結果、この熱分解窒
化ほう素容器については上記した特開昭８１−２６８４
４２号公報記載の方法にしたがって密度の高い層とこれ
より密度の低い層とを積層することは確かに有効である
が、このものの寿命はこの密度の高さとこの各層の厚さ
とが重要な因子となることを見出し、これについての実
験を重ねた結果、高い密度のものは２．１５〜２ＪＯｇ
／ｃｍ３とし、低い密度のものは１．７０〜２ ． １
０ｇ／ｃ１ とすると共に、これらの厚みはいずれも
１〜２０μｍのものとすればよいということを確認して
本発明を完成させた．
以下にこれをさらに詳述する．
（作用）
本発明の熱分解窒化ほう素容器は前記したように高密度
層と低密度層とを少なくとも２層交互に設けてなり、か
つ各層の厚みが１〜２０μｍであるものである．
ここに使用される熱分解窒化ほう素は三塩化ほう素（
ＢＣＩＬ３）などのほう素化合物とアンモニアとを原料
とし、これらをｔ，ｏｏｏ〜２，０００℃の高温に保持
されている基体上で、熱化学蒸着方法で熱分解窒化ほう
素として蒸着させることによって得ることができ、この
熱分解窒化ほう素は密度の高い層とこれより密度の低い
層とを作る必要があるが、これは熱分解窒化ほう素を作
るときの反応圧力を低くすれば密度の高いものとするこ
とができ、反応圧力を高くすれば密度の低いものを得る
ことができる．
しかして、本発明の熱分解窒化ほう素容器において使用
される密度の高い熱分解窒化ほう素は密度が２．３０８
／ｃｍ’より大きいと剥離強度が弱くなりすぎて局所剥
離が生じ易くなるし、密度の低い熱分解窒化ほう素の密
度が１．８０ｇ／ｃｍ’より小さいと引張強度が弱くな
りすぎてクランクが生じ易くなるし、また高密度層の密
度が２．１５ｇ／ｃｍ”より小さいか、低密度層の密度
が２．３０８７ｃｍ’より大きくなると両者の区別が不
明瞭となって応力を十分に緩和することができずクラン
クが生じ易くなるので、この密度の高い熱分解窒化ほう
素の製造時には炉内の圧力は０．１〜１ ａｍ｝Ｉｇと
低くして密度が２．ｌＯ〜２．３０ｇ／ｃ１の範囲の膜
を作るようにし、密度の低い熱分解窒化ほう素の製造時
には炉内の圧力を１〜ｌＯＩｌｍＨｇと高くしてその密
度が１．８０ 〜２．１０ｇ／ｃＩＩ１３の範囲となる
ようにする必要がある。Heat-resistant containers made in this way are used as cells for metal vapor deposition or MBE, and as crucibles and boats for producing single crystals of III-V group compounds such as gallium-arsenic, but these applications are limited to Because the operating temperature is extremely high, the shrinkage of the contents is large when cooled to room temperature, and on the other hand, the pyrolytic boron nitride is highly oriented perpendicular to the growth direction (C-plane). Since it is easy to peel off in the C-plane direction, it has the disadvantage of being easy to break in this direction. (Problem to be Solved by the Invention) Therefore, for this type of pyrolytic boron nitride container, the present inventors first provided this high-density layer and a lower-density layer alternately by at least 2F to stress the pyrolytic boron nitride container. We proposed a heat-resistant container with a multilayer structure that alleviates the
(Refer to Publication No. 42) However, when this crucible is used as a pulling crucible for III-V group compounds such as gallium-arsenic, it cracks during use, although its density is lower than that of a crucible without a multilayer structure. It was found that the problem was that it could only be used a few dozen times because it caused pinholes and local peeling. (Measures to Solve the Problems) The present invention relates to a thermal M boron nitride container that solves the above disadvantages, and is comprised of at least two alternate layers of high-density layers and low-density layers. , and the thickness of each layer is 1 to 2
It is characterized by having a thickness of 0 μm. That is, as a result of various studies on methods for extending the life of the pyrolytic boron nitride container, the present inventors found that this pyrolytic boron nitride container was disclosed in the above-mentioned Japanese Patent Application Laid-Open No. 81-2684.
It is certainly effective to laminate a high-density layer and a lower-density layer according to the method described in Publication No. 42, but the high density and the thickness of each layer are important factors for the lifespan of this product. As a result of repeated experiments, we found that the density of high-density materials is 2.15 to 2 JOg.
/cm3, and those with low density are 1.70 to 2. 1
The present invention was completed by confirming that it is sufficient to set the thickness to 0 g/c1 and to set the thickness of each of these to 1 to 20 μm. This will be explained in more detail below. (Function) As described above, the pyrolytic boron nitride container of the present invention is composed of at least two alternating high-density layers and low-density layers, and each layer has a thickness of 1 to 20 μm. The pyrolytic boron nitride used here is boron trichloride (
By using a boron compound such as BCIL3) and ammonia as raw materials, and depositing them as pyrolytic boron nitride using a thermochemical vapor deposition method on a substrate maintained at a high temperature of t,ooo to 2,000°C. This pyrolytic boron nitride requires the creation of a layer with a high density and a layer with a lower density, but this can be done by lowering the reaction pressure when making pyrolytic boron nitride. By increasing the reaction pressure, it is possible to obtain a product with a low density. Therefore, the dense pyrolytic boron nitride used in the pyrolytic boron nitride container of the present invention has a density of 2.308
/cm', the peel strength will be too weak and local peeling will easily occur, and if the density of low-density pyrolytic boron nitride is less than 1.80 g/cm', the tensile strength will be too weak and the crank will If the density of the high-density layer is less than 2.15 g/cm' or the density of the low-density layer is more than 2.3087 cm', the distinction between the two becomes unclear and the stress cannot be sufficiently relaxed. Therefore, when manufacturing this high-density pyrolytic boron nitride, the pressure in the furnace is kept as low as 0.1 to 1 am}Ig, and the density is reduced to 2.1 to 2.30 g/g. When producing pyrolytic boron nitride, which has a low density, the pressure in the furnace is increased to 1 to lOIlmHg so that the density is in the range of 1.80 to 2.10g/cII13. It is necessary to
また、この熱分解窒化ほう素膜の厚さは密度の高いもの
、また密度の低いもののいずれについても、これらが１
μｍ以下と薄い場合には層の強度が弱く、１回に複数の
層が剥離することになり、２０μｍよりも厚い場合には
１回に１層しかＩ１ １１１１しないが、剥離量が大き
いという不利が生じるので、これらは１〜２０μ■の範
囲とする必要がある。In addition, the thickness of this pyrolytic boron nitride film is 100% for both high density and low density films.
If it is thin (less than μm), the strength of the layer is weak, and multiple layers will peel off at one time.If it is thicker than 20 μm, only one layer will peel off at a time, but the disadvantage is that the amount of peeling will be large. These must be in the range of 1 to 20 .mu.m.
本発明の熱分解窒化ほう素容器は上記した方法で製造さ
れた密度の高い熱分解窒化ほう素とこれより密度の低い
熱分解窒化ほう素を少なくとも２層積層することによっ
て作られるが、この積層１よ前記した熱分解窒化ほう素
の製造炉内の圧力を一定時間毎に調節し、これをくり返
して密度の高い、すなわち密度が２，ｌＯ〜２．３０ｇ
／ｃｍ’である厚さが１〜２０μ−の熱分解窒化ほう素
とこれより密度が低い、密度が１．８０〜２．１０ｇ／
ｃｍ３で厚さが１〜２Ｑμｍの熱分解窒化ほう素を少な
くとも２層以上積層することによって作ればよく、この
層の数は少なくとも２層とすることは必要とされるもの
のこれはこのようにして製造された容器の使用目的、必
要とされる寿命と経済性を勘案して適宜に選定すればよ
い．
このようにして得られた熱分解窒化ほう素容器は密度の
高いものと密度の低いものの積層物であることから、高
温で使用してもその加熱や冷却のヒートサイクルやヒー
トショックによって容器が破壊したり、クラックが発生
するということが殆んどなくなるので、このものはガリ
ウム、砒素、アルξニウムなどの金属を分子線エビタキ
シー（ＭＢＥ）する際の蒸発用セルとして、またガリウ
ムー砒素、インジウムーリン、ガリウムーリンなどに代
表されるＩＩＩ − Ｖ族化合物の製造用ルツボやボー
トなどの半導体関係に有利に使用できるし、これはまた
他の金属、金属化合物、ガラス、セラ亙ツクスなどの蒸
着、融解、多結晶、単結晶の製造用耐熱容器として、使
用するごとができるし、これはまた寿命が長いという有
利性が与えられる．
（実施例）
つぎに本発明の実施例、比較例をあげる。The pyrolytic boron nitride container of the present invention is made by laminating at least two layers of high-density pyrolytic boron nitride produced by the method described above and pyrolytic boron nitride having a lower density. 1. The pressure in the pyrolytic boron nitride manufacturing furnace described above is adjusted at regular intervals, and this is repeated to obtain a high density product, that is, a density of 2.1 O to 2.30 g.
Pyrolytic boron nitride with a thickness of 1 to 20μ-/cm' and a lower density of 1.80 to 2.10g/cm'.
It may be made by laminating at least two or more layers of pyrolytic boron nitride with a thickness of 1 to 2 Q μm in cm3, and although the number of layers is required to be at least 2, it can be made in this way. The container should be selected appropriately, taking into consideration the intended use of the manufactured container, the required lifespan, and economic efficiency. The pyrolytic boron nitride container obtained in this way is a laminate of high-density and low-density materials, so even if it is used at high temperatures, the container will be destroyed by the heat cycle and heat shock of heating and cooling. This product can be used as an evaporation cell for molecular beam epitaxy (MBE) of metals such as gallium, arsenic, and aluminum, as well as for gallium-arsenic, indium-phosphorus, and other metals. It can be advantageously used in semiconductor-related applications such as crucibles and boats for producing III-V compounds such as gallium-phosphorus, and can also be used for vapor deposition, melting, and multi-layer production of other metals, metal compounds, glass, ceramics, etc. It can be used as a heat-resistant container for the production of crystals and single crystals, and it also has the advantage of long life. (Example) Next, examples of the present invention and comparative examples will be given.
実施例１〜２、比較例１〜６
反応炉中に直径２０ｍｍφ、長さ５０開のグラファイト
板を載置し、これを２，０００℃に加熱し、ここに三塩
化ほう素０．２１／分とアンモニアガス０．４ ｆｌ／
分を入れてこのグラファイト板に熱化学蒸着させた。Examples 1 to 2, Comparative Examples 1 to 6 A graphite plate with a diameter of 20 mmφ and a length of 50 mm was placed in a reactor, heated to 2,000°C, and boron trichloride 0.21/ min and ammonia gas 0.4 fl/
Thermochemical vapor deposition was carried out on this graphite plate by adding a few minutes.
この際、反応炉内の圧力は１０〜３０分毎に０．５ｍｍ
Ｈｇから５ ｍｍＨｇにくり返し変化させて、密度が２
．２０〜２．２１ｇ／ｃｍ’で厚さが４〜１０μｍの密
度の高い層と、密度が２．００ｇ／ｃｍ３で厚さが１〜
２μｍである密度の低い層とを２００〜５００層積層し
た熱分解窒化ほう素容器を作り、ついでこの容器中で８
２０３の融解、冷却をくり返して、容器の寿命、破損状
況をしらべたところ、第１表に示した通りの結果が得ら
れた。At this time, the pressure inside the reactor is increased by 0.5 mm every 10 to 30 minutes.
The density was changed repeatedly from Hg to 5 mmHg until the density was 2.
．． A dense layer with a thickness of 20-2.21 g/cm' and a thickness of 4-10 μm and a layer with a density of 2.00 g/cm3 and a thickness of 1-10 μm.
A pyrolytic boron nitride container is made by laminating 200 to 500 layers with a low density of 2 μm, and then 8
When 203 was melted and cooled repeatedly and the lifespan and damage of the container were examined, the results shown in Table 1 were obtained.
しかし、比較のために反応圧力を変えると共に、この時
間も変動させて密度の高い層の厚みを１０〜２７μ通と
して熱分解窒化ほう素容器を作り、Ｂ２０，の融解、冷
却のくり返しで容器の寿命、破損状況をしたべたところ
、
３ｉ１表に併記したとおり
の結果が得られた．
（発明の効果）
本発明は熱分解窒化ほう素容器に関するものであり、こ
れは前記したように密度が２，！５〜２．３０ｇ／ｃｍ
’で厚さが１〜２０μ鳳の密度の高い熱分解窒化ほう素
と、密度が１．１３０〜２．１０３／Ｃｍ’で厚さが１
〜２０１．１ｍの密度の低い熱分解窒化ほう素とを２層
または２層以上に交互に積層してなるものであるが、こ
れによれば高密度のもの、低密度のものが特定の密度を
もつものであり、この厚みも１〜２０μｍとされている
ので高温で使用したときの加熱、冷却のヒートサイクル
やヒートショックによって容器が破壊したり、クランク
が発生するという不利がなくなるので、このものはＩＩ
Ｉ − Ｖ族化合物の製造用ルツボやボートまたはＭＢ
Ｅ用セルなどの半導体関係用として、またその他金属、
金属化合物、ガラス、セラミックスなどの蒸着、融解、
結晶製造用耐熱容器として使用することができるという
工業的な有利性が与えられる．手
糸充
補
正
書（自発）
１．事件の表示
平威１年特許願′！ＰＩ１９０１６５号２．
発明の名称
熱分解窒化ほう素容器
３．
４
補正をする者
事件との関係 特許出願人However, for comparison, we made a pyrolytic boron nitride container by varying the reaction pressure and time to make the dense layer 10 to 27 microns thick, and by repeating melting and cooling of B20, we made a container of pyrolytic boron nitride. When we examined the lifespan and damage status, we obtained the results as listed in Table 3i1. (Effects of the Invention) The present invention relates to a pyrolytic boron nitride container, which, as mentioned above, has a density of 2,! 5-2.30g/cm
Highly dense pyrolytic boron nitride with a thickness of 1 to 20μ and a density of 1.130 to 2.103/Cm and a thickness of 1
It is made by laminating two or more layers of pyrolytic boron nitride with a low density of ~201.1 m, but according to this, high density and low density pyrolytic boron nitrides have a specific density. The thickness is set at 1 to 20 μm, which eliminates the disadvantages of container destruction and cranking caused by heating and cooling heat cycles and heat shock when used at high temperatures. Things II
Crucible, boat or MB for producing I-V group compounds
For semiconductor-related applications such as E cells, and other metals,
Vapor deposition, melting, etc. of metal compounds, glass, ceramics, etc.
It has the industrial advantage of being able to be used as a heat-resistant container for crystal production. Teitomitsu correction form (voluntary) 1. Case display Pingwei 1 year patent application'! PI190165 No. 2. Name of the invention Pyrolytic boron nitride container 3. 4 Relationship with the case of the person making the amendment Patent applicant
Claims (2)
てなり、かつ各層の厚みが１〜２０μｍであることを特
徴とする熱分解窒化ほう素容器。1. A pyrolytic boron nitride container comprising at least two alternating high-density layers and low-density layers, each layer having a thickness of 1 to 20 μm.
であり、低密度層の密度が１．８０〜２．１０ｇ／ｃｍ
＾３である請求項１に記載の熱分解窒化ほう素容器。2. The density of the high density layer is 2.15~2.30g/cm^3
and the density of the low density layer is 1.80 to 2.10 g/cm
The pyrolytic boron nitride container according to claim 1, which is ^3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1190165A JPH083144B2 (en) | 1989-07-21 | 1989-07-21 | Pyrolysis boron nitride container |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1190165A JPH083144B2 (en) | 1989-07-21 | 1989-07-21 | Pyrolysis boron nitride container |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0356674A true JPH0356674A (en) | 1991-03-12 |
| JPH083144B2 JPH083144B2 (en) | 1996-01-17 |
Family
ID=16253514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1190165A Expired - Lifetime JPH083144B2 (en) | 1989-07-21 | 1989-07-21 | Pyrolysis boron nitride container |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH083144B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996021749A1 (en) * | 1994-09-28 | 1996-07-18 | Advanced Ceramics Corporation | High density flash evaporator |
| JP2008101947A (en) * | 2006-10-17 | 2008-05-01 | Gs Yuasa Corporation:Kk | Ultraviolet irradiation device and its adjusting method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH038792A (en) * | 1989-06-05 | 1991-01-16 | Hitachi Cable Ltd | Boron nitride crucible |
-
1989
- 1989-07-21 JP JP1190165A patent/JPH083144B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH038792A (en) * | 1989-06-05 | 1991-01-16 | Hitachi Cable Ltd | Boron nitride crucible |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996021749A1 (en) * | 1994-09-28 | 1996-07-18 | Advanced Ceramics Corporation | High density flash evaporator |
| GB2313846A (en) * | 1994-09-28 | 1997-12-10 | Advanced Ceramics Corp | High density flash evaporator |
| GB2313846B (en) * | 1994-09-28 | 1999-05-26 | Advanced Ceramics Corp | High density flash evaporator |
| JP2008101947A (en) * | 2006-10-17 | 2008-05-01 | Gs Yuasa Corporation:Kk | Ultraviolet irradiation device and its adjusting method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH083144B2 (en) | 1996-01-17 |
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