JPH0354457B2 - - Google Patents
Info
- Publication number
- JPH0354457B2 JPH0354457B2 JP58222644A JP22264483A JPH0354457B2 JP H0354457 B2 JPH0354457 B2 JP H0354457B2 JP 58222644 A JP58222644 A JP 58222644A JP 22264483 A JP22264483 A JP 22264483A JP H0354457 B2 JPH0354457 B2 JP H0354457B2
- Authority
- JP
- Japan
- Prior art keywords
- internal electrode
- gas
- chamber
- etching
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H10P50/00—
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58222644A JPS60126833A (ja) | 1983-11-24 | 1983-11-24 | プラズマエツチング装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58222644A JPS60126833A (ja) | 1983-11-24 | 1983-11-24 | プラズマエツチング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60126833A JPS60126833A (ja) | 1985-07-06 |
| JPH0354457B2 true JPH0354457B2 (enExample) | 1991-08-20 |
Family
ID=16785678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58222644A Granted JPS60126833A (ja) | 1983-11-24 | 1983-11-24 | プラズマエツチング装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60126833A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62241336A (ja) * | 1986-04-11 | 1987-10-22 | Nec Kyushu Ltd | プラズマエツチング装置 |
| JP2832724B2 (ja) * | 1989-06-16 | 1998-12-09 | 東京エレクトロン株式会社 | 被処理体処理装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52127761A (en) * | 1976-04-19 | 1977-10-26 | Fujitsu Ltd | Gas plasma etching unit |
| JPS5358761A (en) * | 1976-11-08 | 1978-05-26 | Sony Corp | Vapor phase growth apparatus |
-
1983
- 1983-11-24 JP JP58222644A patent/JPS60126833A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60126833A (ja) | 1985-07-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4358686A (en) | Plasma reaction device | |
| US7255773B2 (en) | Plasma processing apparatus and evacuation ring | |
| JP3468446B2 (ja) | プラズマ処理装置 | |
| US4512841A (en) | RF Coupling techniques | |
| JP3242166B2 (ja) | エッチング装置 | |
| US5647912A (en) | Plasma processing apparatus | |
| KR100554645B1 (ko) | 처리 장치, 및 가스 방전 억제 부재 | |
| US6916401B2 (en) | Adjustable segmented electrode apparatus and method | |
| KR20010089689A (ko) | 플라즈마 리액터 내의 천공된 플라즈마 한정 링 | |
| JP2002246368A (ja) | ウェハー表面径方向均一プラズマを用いるウェハー処理システム | |
| JP2000058518A (ja) | 基板処理装置 | |
| JP3050716B2 (ja) | プラズマ処理装置 | |
| JPH0359573B2 (enExample) | ||
| US4352974A (en) | Plasma etcher having isotropic subchamber with gas outlet for producing uniform etching | |
| JPH0473289B2 (enExample) | ||
| JPH0423429A (ja) | 半導体装置のプラズマ処理装置及びプラズマ処理方法 | |
| JPS6345468B2 (enExample) | ||
| JPH0452611B2 (enExample) | ||
| JPH0354457B2 (enExample) | ||
| JPH02106925A (ja) | ドライエッチング装置 | |
| JP2978857B2 (ja) | プラズマエッチング装置 | |
| JPS6234834B2 (enExample) | ||
| EP0033345B1 (en) | High capacity etching apparatus | |
| US6551520B1 (en) | Exhausting method and means in a dry etching apparatus | |
| US6123805A (en) | Discharge electrode and process chamber of dry etching facility for manufacturing semiconductor devices |