JPH0353789B2 - - Google Patents
Info
- Publication number
- JPH0353789B2 JPH0353789B2 JP8131680A JP8131680A JPH0353789B2 JP H0353789 B2 JPH0353789 B2 JP H0353789B2 JP 8131680 A JP8131680 A JP 8131680A JP 8131680 A JP8131680 A JP 8131680A JP H0353789 B2 JPH0353789 B2 JP H0353789B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- avalanche photodiode
- photodiode
- optoelectronic switch
- switching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 37
- 230000005693 optoelectronics Effects 0.000 claims description 24
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 18
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 229910052785 arsenic Inorganic materials 0.000 claims 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Light Receiving Elements (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8131680A JPS577978A (en) | 1980-06-18 | 1980-06-18 | Opto-electronic switch |
| GB8038944A GB2078440B (en) | 1980-03-31 | 1980-12-04 | An optoelectronic switch |
| CA000366261A CA1153092A (en) | 1980-03-31 | 1980-12-05 | Optoelectronic switches |
| US06/215,614 US4368385A (en) | 1980-03-31 | 1980-12-12 | Optoelectronic switches |
| FR8026356A FR2482386B1 (fr) | 1980-03-31 | 1980-12-12 | Contacteur opto-electronique |
| DE19803047188 DE3047188A1 (de) | 1980-03-31 | 1980-12-15 | Optoelektronischer schalter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8131680A JPS577978A (en) | 1980-06-18 | 1980-06-18 | Opto-electronic switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS577978A JPS577978A (en) | 1982-01-16 |
| JPH0353789B2 true JPH0353789B2 (ko) | 1991-08-16 |
Family
ID=13742984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8131680A Granted JPS577978A (en) | 1980-03-31 | 1980-06-18 | Opto-electronic switch |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS577978A (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6024847A (ja) * | 1983-07-20 | 1985-02-07 | 大日本印刷株式会社 | 滅菌包装方法 |
| JPH05275735A (ja) * | 1992-03-30 | 1993-10-22 | Hamamatsu Photonics Kk | 光制御スイッチ |
| EP3559996B1 (en) | 2016-12-22 | 2021-03-24 | Lumileds LLC | Light emitting diodes with sensor segment for operational feedback |
| JP7224823B2 (ja) * | 2018-09-19 | 2023-02-20 | キヤノン株式会社 | 光検出装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51148392A (en) * | 1975-06-05 | 1976-12-20 | Western Electric Co | Hetero juntion optical detector |
| JPS5416196A (en) * | 1977-07-06 | 1979-02-06 | Nec Corp | Hetero junction avalanche photo diode |
| JPS54110792A (en) * | 1978-02-17 | 1979-08-30 | Mitsubishi Electric Corp | Avalanche photo diode |
| JPS553685A (en) * | 1978-06-23 | 1980-01-11 | Nec Home Electronics Ltd | Semiconductor device |
-
1980
- 1980-06-18 JP JP8131680A patent/JPS577978A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51148392A (en) * | 1975-06-05 | 1976-12-20 | Western Electric Co | Hetero juntion optical detector |
| JPS5416196A (en) * | 1977-07-06 | 1979-02-06 | Nec Corp | Hetero junction avalanche photo diode |
| JPS54110792A (en) * | 1978-02-17 | 1979-08-30 | Mitsubishi Electric Corp | Avalanche photo diode |
| JPS553685A (en) * | 1978-06-23 | 1980-01-11 | Nec Home Electronics Ltd | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS577978A (en) | 1982-01-16 |
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