JPH0353789B2 - - Google Patents

Info

Publication number
JPH0353789B2
JPH0353789B2 JP55081316A JP8131680A JPH0353789B2 JP H0353789 B2 JPH0353789 B2 JP H0353789B2 JP 55081316 A JP55081316 A JP 55081316A JP 8131680 A JP8131680 A JP 8131680A JP H0353789 B2 JPH0353789 B2 JP H0353789B2
Authority
JP
Japan
Prior art keywords
semiconductor
avalanche photodiode
photodiode
optoelectronic switch
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55081316A
Other languages
English (en)
Japanese (ja)
Other versions
JPS577978A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8131680A priority Critical patent/JPS577978A/ja
Priority to GB8038944A priority patent/GB2078440B/en
Priority to CA000366261A priority patent/CA1153092A/en
Priority to US06/215,614 priority patent/US4368385A/en
Priority to FR8026356A priority patent/FR2482386B1/fr
Priority to DE19803047188 priority patent/DE3047188A1/de
Publication of JPS577978A publication Critical patent/JPS577978A/ja
Publication of JPH0353789B2 publication Critical patent/JPH0353789B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP8131680A 1980-03-31 1980-06-18 Opto-electronic switch Granted JPS577978A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP8131680A JPS577978A (en) 1980-06-18 1980-06-18 Opto-electronic switch
GB8038944A GB2078440B (en) 1980-03-31 1980-12-04 An optoelectronic switch
CA000366261A CA1153092A (en) 1980-03-31 1980-12-05 Optoelectronic switches
US06/215,614 US4368385A (en) 1980-03-31 1980-12-12 Optoelectronic switches
FR8026356A FR2482386B1 (fr) 1980-03-31 1980-12-12 Contacteur opto-electronique
DE19803047188 DE3047188A1 (de) 1980-03-31 1980-12-15 Optoelektronischer schalter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8131680A JPS577978A (en) 1980-06-18 1980-06-18 Opto-electronic switch

Publications (2)

Publication Number Publication Date
JPS577978A JPS577978A (en) 1982-01-16
JPH0353789B2 true JPH0353789B2 (enrdf_load_stackoverflow) 1991-08-16

Family

ID=13742984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8131680A Granted JPS577978A (en) 1980-03-31 1980-06-18 Opto-electronic switch

Country Status (1)

Country Link
JP (1) JPS577978A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6024847A (ja) * 1983-07-20 1985-02-07 大日本印刷株式会社 滅菌包装方法
JPH05275735A (ja) * 1992-03-30 1993-10-22 Hamamatsu Photonics Kk 光制御スイッチ
FR3048126B1 (fr) * 2016-02-18 2018-03-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives Structure du type photodiode, composant et procede de fabrication d'une structure
EP3559996B1 (en) 2016-12-22 2021-03-24 Lumileds LLC Light emitting diodes with sensor segment for operational feedback
JP7224823B2 (ja) * 2018-09-19 2023-02-20 キヤノン株式会社 光検出装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3995303A (en) * 1975-06-05 1976-11-30 Bell Telephone Laboratories, Incorporated Growth and operation of a step-graded ternary III-V heterojunction p-n diode photodetector
JPS5416196A (en) * 1977-07-06 1979-02-06 Nec Corp Hetero junction avalanche photo diode
JPS54110792A (en) * 1978-02-17 1979-08-30 Mitsubishi Electric Corp Avalanche photo diode
JPS553685A (en) * 1978-06-23 1980-01-11 Nec Home Electronics Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS577978A (en) 1982-01-16

Similar Documents

Publication Publication Date Title
Ishibashi et al. Uni-traveling-carrier photodiodes
Shimizu et al. InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz
Kinsey et al. Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz
Ishibashi et al. InP/InGaAs uni-traveling-carrier photodiodes
US10199525B2 (en) Light-receiving element and optical integrated circuit
US4368385A (en) Optoelectronic switches
Matsushima et al. High-speed-response InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers
Slayman et al. Frequency and pulse response of a novel high-speed interdigital surface photoconductor (IDPC)
Law et al. III-V alloy heterostructure high speed avalanche photodiodes
JPH05160426A (ja) 半導体受光素子
Berger MSM photodiodes
Li et al. A partially depleted absorber photodiode with graded doping injection regions
Jang et al. Metamorphic graded bandgap InGaAs-InGaAlAs-InAlAs double heterojunction PiIN photodiodes
US5343054A (en) Semiconductor light-detection device with recombination rates
JPH0353789B2 (enrdf_load_stackoverflow)
US4301463A (en) Demultiplexing photodetector
US5296698A (en) Lateral photo-sensing device, opt-electronic integrated circuit using the lateral photo-sensing device and photo-logic device using the lateral photo-sensing device
Berger Metal-semiconductor-metal photodetectors
Sankaralingam et al. Drift-enhanced dual-absorption PIN photodiodes
Sano et al. Performance dependence of InGaAs MSM photodetectors on barrier-enhancement layer structures
Jang et al. The impact of a large bandgap drift region in long-wavelength metamorphic photodiodes
Ito et al. High-speed and high-output uni-traveling-carrier photodiodes
US4727349A (en) Depleted channel photoconductor
DeCorby et al. Frequency-domain demonstration of transit-time-limited, large-area InGaP-InP-InGaAs MSM photodetectors
Yuang et al. Overall performance improvement in GaAs MSM photodetectors by using recessed-cathode structure