JPH0353099A - Method for processing ta base material - Google Patents
Method for processing ta base materialInfo
- Publication number
- JPH0353099A JPH0353099A JP18641389A JP18641389A JPH0353099A JP H0353099 A JPH0353099 A JP H0353099A JP 18641389 A JP18641389 A JP 18641389A JP 18641389 A JP18641389 A JP 18641389A JP H0353099 A JPH0353099 A JP H0353099A
- Authority
- JP
- Japan
- Prior art keywords
- base material
- electrolyte
- sulfonic acid
- acid group
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000003792 electrolyte Substances 0.000 claims abstract description 26
- 125000000542 sulfonic acid group Chemical group 0.000 claims abstract description 21
- 150000001491 aromatic compounds Chemical class 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000011356 non-aqueous organic solvent Substances 0.000 claims description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims 3
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims 2
- 150000004996 alkyl benzenes Chemical class 0.000 claims 1
- 238000003672 processing method Methods 0.000 claims 1
- 238000005868 electrolysis reaction Methods 0.000 abstract description 13
- 238000005530 etching Methods 0.000 abstract description 12
- 239000011888 foil Substances 0.000 abstract description 9
- 125000001273 sulfonato group Chemical group [O-]S(*)(=O)=O 0.000 abstract 3
- 239000002585 base Substances 0.000 description 35
- 239000008151 electrolyte solution Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000003125 aqueous solvent Substances 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- WNXJIVFYUVYPPR-UHFFFAOYSA-N 1,3-dioxolane Chemical compound C1COCO1 WNXJIVFYUVYPPR-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910006127 SO3X Inorganic materials 0.000 description 1
- 125000001539 acetonyl group Chemical group [H]C([H])([H])C(=O)C([H])([H])* 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- JHJUUEHSAZXEEO-UHFFFAOYSA-M sodium;4-dodecylbenzenesulfonate Chemical compound [Na+].CCCCCCCCCCCCC1=CC=C(S([O-])(=O)=O)C=C1 JHJUUEHSAZXEEO-UHFFFAOYSA-M 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical class CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electrodes For Compound Or Non-Metal Manufacture (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明は、Ｔａ（タンタル）の板、箔、膜などのＴａ
基材を、電解を利用して加工するＴａ基材の加工方法に
関する。[Detailed Description of the Invention] Industrial Field of Application This invention relates to Ta (tantalum) plates, foils, films, etc.
The present invention relates to a method for processing a Ta base material in which the base material is processed using electrolysis.
従来の技術
Ｔａは、化学的に安定な金属に属するため、たとえば、
耐酸性を要求される化学工業用装置に利用されたり、あ
るいは、電解コンデンサの電極などに利用されたりして
いる。Conventional technology Since Ta belongs to chemically stable metals, for example,
It is used in chemical industrial equipment that requires acid resistance, or as electrodes for electrolytic capacitors.
Ｔａ基材の加工は、たとえば、フッ化水素酸と硝酸との
混合液、または、ＮａＯＨ水溶液とＨ２０２水溶液との
混合液などのエッチング液にＴａ基材を浸漬し、同エッ
チング液を加熱してＴａ基材をエッチングすることによ
り行われる。また、コンデンサには、できるだけ大きい
表面積を有するものを用いるため、Ｔａ基材の微粒子の
焼結体を用いている。Processing of the Ta base material is carried out, for example, by immersing the Ta base material in an etching solution such as a mixed solution of hydrofluoric acid and nitric acid, or a mixed solution of an aqueous NaOH solution and an aqueous H202 solution, and heating the etching solution. This is done by etching the Ta base material. Furthermore, in order to use a capacitor having as large a surface area as possible, a sintered body of fine particles of a Ta base material is used.
発明が解決しようとする課題
前記のようなエッチング液を用０）でＴａ基材の加工を
行うと、マスキング材料が除去されやすいので、エッチ
ング除去し．たい箇所としたくない箇所との選択性が悪
いという問題がある。Problems to be Solved by the Invention When a Ta base material is processed using the above-mentioned etching solution, the masking material is easily removed. There is a problem in that the selectivity between desired and undesired areas is poor.
他方、Ｔａ基材の平滑な表面をエッチング加工により粗
くして表面積を大きくすることも、なかなか容易ではな
い。このため、上記のように、コンデンサには、Ｔａの
微粒子の焼結体を利用しているのである。On the other hand, it is not easy to increase the surface area by roughening the smooth surface of the Ta base material by etching. Therefore, as mentioned above, a sintered body of Ta fine particles is used in the capacitor.
そこで、この発明は、エッチング箇所の選択性が良く、
表面を粗くすることが容易である、Ｔａ基材の加工方法
を提供することを目的とする。Therefore, this invention has good selectivity of etching locations,
The object of the present invention is to provide a method for processing a Ta base material, which makes it easy to roughen the surface.
課題を解決するための手段
上記目的を達成するために、この発明にかかるＴａ基材
の加工方法は、Ｔａ基材を、スルホン酸基および／また
はスルホン酸塩基を有する電解質の溶液中で電解して加
工することとしている。Means for Solving the Problems In order to achieve the above object, the method for processing a Ta base material according to the present invention includes electrolyzing a Ta base material in a solution of an electrolyte having a sulfonic acid group and/or a sulfonic acid group. It is planned that the process will be carried out using
前記Ｔａ基材としては、Ｔａｏ板、箔、膜など固体であ
れば、その形状に特に限定はない。また、Ｔａ基材の純
度も特に限定はなく、たとえば、通常使用されているも
のが使用されつる。The shape of the Ta base material is not particularly limited as long as it is a solid material such as a Tao plate, foil, or film. Further, the purity of the Ta base material is not particularly limited, and for example, a commonly used Ta base material may be used.
この発明では、Ｔａ基材を電解するために、電解質とし
て、スルホン酸基およびスルホン酸塩基のうちの少なく
とも一方の基を有する化合物（以下、「電解質入」と言
う）を用いる。スルホン酸基は、− Ｓｏ３｝｛で表さ
れる１価の基であり、スルホン酸塩基は、−ＳＯ３Ｘで
表される１価の基である。ここで、Ｘは、Ｈ＋、Ｎａ＋
およびＫ＋などのアルカリ金属イオン、（ＮＲ４）＋な
どの１価のカチオンである。なお、Ｒは、Ｈ１または、
カーボン（Ｃ）の数が１〜６のアルキル基であり、４つ
ともすべて同じでもよく、いずれか１つ以上が異なって
いてもよい。In this invention, in order to electrolyze a Ta base material, a compound having at least one of a sulfonic acid group and a sulfonic acid group (hereinafter referred to as "electrolyte-containing") is used as an electrolyte. The sulfonic acid group is a monovalent group represented by -So3}{, and the sulfonic acid group is a monovalent group represented by -SO3X. Here, X is H+, Na+
and alkali metal ions such as K+, and monovalent cations such as (NR4)+. Note that R is H1 or
It is an alkyl group having 1 to 6 carbons (C), all four of which may be the same, or one or more of which may be different.
前記電解質入としては特に限定はないが、たとえば、ス
ルホン酸基および／またはスルホン酸塩基が付与された
芳香族化合物が使用されるのが好ましい。前記芳香族化
合物には、電気化学的に安定Ａものであれば、スルホン
酸基および／またはスルホン酸塩基以外の基、たとえば
、アルキル基などが１個以上付与されていてもよい。前
記電解質入として用いられる芳香族化合物としては、た
トエハ、ベンゼンスルホン酸、アルキルベンゼンスルホ
ン酸、ナフタレンスルホン酸、アルキルナフタレンスル
ホン酸、および、これらのスルホン酸の塩からなる群の
中から選ばれた少なくとも１つが使用されるのが好まし
い。このような化合物は、電気化学的に安定であるから
である。前記芳香族化合物に付与されたアルキル基とし
ては、ベンゼン環を有する化合物の場合、カーボンの数
が１８まで、ナフタレン環を有する化合物の場合、カー
ボンの数が６までが付与可能である。しかし、この発明
では、前記芳香族化合物に付与されるアルキル基の長さ
や置換数などはあまり重要ではなく、電気化学的に反応
を行ったりしないことが重要である。The electrolyte is not particularly limited, but it is preferable to use, for example, an aromatic compound provided with a sulfonic acid group and/or a sulfonic acid group. The aromatic compound may be provided with one or more sulfonic acid groups and/or groups other than sulfonic acid groups, such as alkyl groups, as long as it is electrochemically stable. The aromatic compound used as the electrolyte may be at least one selected from the group consisting of acetic acid, benzenesulfonic acid, alkylbenzenesulfonic acid, naphthalenesulfonic acid, alkylnaphthalenesulfonic acid, and salts of these sulfonic acids. Preferably one is used. This is because such compounds are electrochemically stable. As the alkyl group added to the aromatic compound, in the case of a compound having a benzene ring, up to 18 carbon atoms can be added, and in the case of a compound having a naphthalene ring, up to 6 carbon atoms can be added. However, in the present invention, the length and number of substitutions of the alkyl group imparted to the aromatic compound are not so important, and it is important that no reaction occurs electrochemically.
電解に用いる電解液の溶媒としては、電気化学的に安定
で、しかも、電解質Ａが可溶な溶媒であれば特に限定は
なく、水および非水溶媒のいずれを用いてもよい。前記
非水溶媒としては、たとえば、アセトニトリル、プロピ
レンカーボネート（２−オキソー４−メチル−１，３−
ジオキソラン）、ジメチルホルムアミド、γ−プチロラ
クトンなどの非水系の有機溶媒が挙げられるが、これら
に限定されｋい。前記電解液の溶媒として、水を用いて
も、非水系の有機溶媒を用いても良い。The solvent of the electrolytic solution used for electrolysis is not particularly limited as long as it is electrochemically stable and in which electrolyte A is soluble, and either water or non-aqueous solvents may be used. Examples of the non-aqueous solvent include acetonitrile, propylene carbonate (2-oxo-4-methyl-1,3-
Examples include, but are not limited to, nonaqueous organic solvents such as dioxolane), dimethylformamide, and γ-butyrolactone. As the solvent for the electrolytic solution, water may be used or a non-aqueous organic solvent may be used.
作用
この発明では、電解質として、スルホン酸基および／ま
たはスルホン酸塩基を有するものを用いるので、Ｔａ基
材を電解により容易Ｋ加工することが可能となった。Ｔ
ａ基材の電解液に浸される表面を絶縁膜で適当にマスキ
ングすることにより、選択的なエッチングも可能となる
。また、電解条件をコントロールすることにより、表面
を粗く加工できて、見かけ上の表面積を増大することが
可能となった。Function: In the present invention, since an electrolyte having a sulfonic acid group and/or a sulfonic acid group is used, it is possible to easily perform K processing on a Ta base material by electrolysis. T
Selective etching is also possible by appropriately masking the surface of the base material that will be immersed in the electrolyte with an insulating film. Furthermore, by controlling the electrolytic conditions, it has become possible to roughen the surface and increase the apparent surface area.
実施例 以下に本発明の実施例を示す。Example Examples of the present invention are shown below.
この発明では、たとえば第１図にみるように、Ｔａ基材
１を陽極（アノード）とし、対極には、安定な電極２を
陰極（カソード）として配し、これら両極１および２の
間に直流電源３を接続し、両極１および２０間に電圧を
印加して、電解を行う。これにより、Ｔａが電解液４中
に溶出するので、Ｔａ基材１を所望の形状に加工したり
、粗面化したりすることができる。前記安定な電極２と
しては、たとえば、Ｐｔなとの不溶性の電極が使用され
、また、不溶性の導体皮膜で覆われた電極であってもよ
い。図中、５は電解槽である。なお、直流電源３は、電
池である必要はなく、たとえば、交流電源と交流を直流
に変えつる回路とを有するものなどであってもよい。In this invention, for example, as shown in FIG. 1, a Ta base material 1 is used as an anode, a stable electrode 2 is arranged as a counter electrode as a cathode, and a direct current is applied between these two electrodes 1 and 2. A power source 3 is connected and a voltage is applied between the poles 1 and 20 to perform electrolysis. As a result, Ta is eluted into the electrolytic solution 4, so that the Ta base material 1 can be processed into a desired shape or its surface can be roughened. As the stable electrode 2, an insoluble electrode such as Pt is used, or an electrode covered with an insoluble conductive film may be used. In the figure, 5 is an electrolytic cell. Note that the DC power source 3 does not need to be a battery, and may be, for example, one having an AC power source and a circuit that converts AC into DC.
Ｔａ基材と安定な電極との間に電圧を印加すると、電流
は時間に対して、第２図に曲線Ｒで示すような変化をす
る。初期には、Ｐｔのような電気化学的に非常に安定な
ものと同程度の電流が流れるが、ある時間以降になると
電流が徐々に減少する。これは、Ｔａ基材表面に絶縁膜
が形成されていくような現象が起こっていることを示す
。さらに電圧を印加し続けると、電流は再び増加してく
る。この時、Ｔａ基材表面を観察すると、気泡が発生し
て、Ｔａ基材がエッチングされていくことがわかる。こ
のエッチング速度は、印加する電圧値または電流値によ
って異なり、適宜設定すればよい。電圧値または電流値
が大きいほど、エッチング速度がはやくなる。Ｔａ基材
表面を粗くするためのエッチングも、印加する電圧値（
または電流値）と通電時間をコントロールすることによ
り容易に行える。また、前記電解質入は、従来使用して
いる電解質に比べてマスキング材料を除去しにくい。こ
のため、この発明において、Ｔａ基材表面を所望のパタ
ーンにマスキング材料（絶縁膜）で覆うことにより、エ
ッチング箇所の選択性が高くなる。When a voltage is applied between the Ta substrate and the stable electrode, the current changes with time as shown by curve R in FIG. Initially, a current comparable to that of an electrochemically very stable material such as Pt flows, but after a certain time, the current gradually decreases. This indicates that a phenomenon in which an insulating film is formed on the surface of the Ta base material is occurring. As the voltage continues to be applied, the current increases again. At this time, when observing the surface of the Ta base material, it can be seen that bubbles are generated and the Ta base material is etched. This etching rate varies depending on the applied voltage value or current value, and may be set as appropriate. The larger the voltage value or current value, the faster the etching rate. Etching to roughen the surface of the Ta base material also depends on the applied voltage value (
This can be easily done by controlling the current value (or current value) and the energization time. In addition, the electrolyte-containing masking material is more difficult to remove than conventionally used electrolytes. Therefore, in the present invention, by covering the surface of the Ta base material with a masking material (insulating film) in a desired pattern, the selectivity of the etching location is increased.
前記マスキング材料としては特に限定はないが、たとえ
ば、被加工部分のＴａ基材上にパターニング可能なフォ
トレジストなど皮膜形成可能な樹脂が使われる。The masking material is not particularly limited, but for example, a resin capable of forming a film such as a photoresist that can be patterned on the Ta base material of the processed portion is used.
なお、この発明の方法には、Ｔａ基材を電解研摩、電解
型彫り、電解研削などの電解加工（ＥＣＭ）により加工
する場合も含まれる。たとえば、Ｔａ基材をアノードと
し、工具をカソードとし、両極を狭いすきまで対向させ
、そのすきまに速い速度で電解液（電解質入を含むもの
）を流しながら、必要に応じて両極の少なくとも一方を
動かし、両極間に高密度電流を流すことにより電解を行
うのである。このようにして加工することにより、Ｔａ
基材は、たとえば、カソードの工具の形状に沿った形に
加工される。Note that the method of the present invention also includes the case where the Ta base material is processed by electrolytic machining (ECM) such as electrolytic polishing, electrolytic die engraving, and electrolytic grinding. For example, the Ta base material is used as an anode, the tool is used as a cathode, the two electrodes are opposed to each other with a narrow gap, and while an electrolyte (containing electrolyte) is flowing through the gap at a high speed, at least one of the two electrodes is connected as needed. Electrolysis is performed by moving a high-density current between the two electrodes. By processing in this way, Ta
For example, the base material is processed into a shape that follows the shape of the cathode tool.
また、この発明の方法によれば、電解のために印加する
電圧値（または電流値）と印加時間をコントロールする
ことにより、Ｔａ基材の表面を粗くして、その表面積が
１０〜６０倍に増大するようにすることもできる。この
ように粗面化されたＴａ基材をコンデンサに用いると、
コンデンサの小型化、大容量化に有用である。Furthermore, according to the method of the present invention, by controlling the voltage value (or current value) and application time applied for electrolysis, the surface of the Ta base material is roughened, and its surface area is increased by 10 to 60 times. It can also be made to increase. When such a roughened Ta base material is used in a capacitor,
It is useful for downsizing and increasing capacitance of capacitors.
以下に具体的な実施例を示すが、この発明は下記実施例
に限定されるものではない。Although specific examples are shown below, the present invention is not limited to the following examples.
実施例１
電解質Ａとして、ｐ一トルエンスルホン酸のテトラエチ
ルアンモニウム塩を、溶媒としてアセトニ｝ ＩＪルを
用い、０．２Ｍの濃度の電解液を調製した。この電解液
を電解槽に入れ、アノードとじて厚み０．１朋のＴａの
箔（純度９９．９９％）を用い、カソードとしてＴａ箔
の１０倍の面積を持つＰｔ板（純度９９．９９％）を用
い、これらを電解液に浸漬した。Example 1 An electrolytic solution having a concentration of 0.2M was prepared using tetraethylammonium salt of p-toluenesulfonic acid as electrolyte A and acetonyl IJ as a solvent. This electrolyte was placed in an electrolytic cell, and a 0.1 mm thick Ta foil (99.99% purity) was used as the anode, and a Pt plate (99.99% purity) with an area 10 times that of the Ta foil was used as the cathode. ), and these were immersed in an electrolytic solution.
電解液の温度を２６゜Ｃとし、Ｔａ箔とＰｔ板との間に
直流電圧２０Ｖを印加し、電流密度３ｍＡ／ｄで通電し
て電解を行った。電流は初期から時間とともに減少して
いき、ある時間からは増大しはじめて一定値となった。The temperature of the electrolytic solution was set to 26° C., a DC voltage of 20 V was applied between the Ta foil and the Pt plate, and electricity was applied at a current density of 3 mA/d to perform electrolysis. The current decreased with time from the beginning, and after a certain point it started to increase and reached a constant value.
３ｏ分間以上印加しつづけたところ、Ｔａ箔の電解液に
浸漬した部分は完全に消失しており、電解液中に白い不
溶物が沈澱していた。When the application was continued for 30 minutes or more, the portion of the Ta foil immersed in the electrolyte completely disappeared, and white insoluble matter was precipitated in the electrolyte.
電圧を印加してから電流値が減少していき、その後、徐
々に増えていく途中の状態で、Ｔａ箔を取り出して、そ
の表面を観察した。その結果、Ｔａ箔表面が凹凸にエッ
チングされていて、表面があれでいた。After the voltage was applied, the current value decreased, and then while it was in the process of gradually increasing, the Ta foil was taken out and its surface was observed. As a result, the surface of the Ta foil was etched into irregularities, and the surface was rough.
実施例２
実施例１において、電解質Ａとしてｐ−ドデシルベンゼ
ンスルホン酸ナトリウムを用い、溶媒として水を用いた
こと以外は、実施例１と同様にしてＴａの電解を行った
ところ、Ｔａ箔のエッチングが可能であった。Example 2 Ta electrolysis was performed in the same manner as in Example 1, except that sodium p-dodecylbenzenesulfonate was used as electrolyte A and water was used as the solvent. was possible.
実施例３
実施例１において、電解質入としてトリイソプロビルナ
フタレンスルホン酸ナトリウムを用い、溶媒として水を
用いたこと以外は、実施例１と同様にしてＴａの電解を
行ったところ、Ｔａ箔のエノチングが可能であった。Example 3 Ta electrolysis was carried out in the same manner as in Example 1, except that sodium triisoprobylnaphthalene sulfonate was used as the electrolyte and water was used as the solvent. was possible.
発明の効果
この発明にかかるＴａ基材の加工方法は、以上に述べた
ように、スルホン酸基またはスルホン酸塩基を有する電
解質を用いて電解を行うので、Ｔａ基材が容易に加工さ
れる。Effects of the Invention As described above, in the method for processing a Ta base material according to the present invention, electrolysis is performed using an electrolyte having a sulfonic acid group or a sulfonic acid group, so that the Ta base material can be easily processed.
第１図は、この発明にかかるＴａ基材の加工方法の一実
施例を表す概観図、第２図は、この発明にかかるＴａ基
材の加工方法を行ったときの電流の時間変化の一例を示
す特性図である。
１・・・Ｔａ基材、２・・・安定な電極、３・・・直流
電源、４・・・電解液。FIG. 1 is an overview diagram showing an embodiment of the method for processing a Ta base material according to the present invention, and FIG. 2 is an example of the temporal change in current when the method for processing a Ta base material according to the present invention is carried out. FIG. DESCRIPTION OF SYMBOLS 1... Ta base material, 2... Stable electrode, 3... DC power supply, 4... Electrolyte solution.
Claims (1)
ン酸塩基を有する電解質の溶液中で電解して加工するＴ
ａ基材の加工方法。 （２）電解質が非水系の有機溶媒に溶解されている請求
項１記載のＴａ基材の加工方法。（３）電解質が水に溶
解されている請求項１記載のＴａ基材の加工方法。 （４）電解質が、スルホン酸基および／またはスルホン
酸基を有する芳香族化合物である請求項１から３までの
いずれかに記載のＴａ基材の加工方法。 （５）芳香族化合物が、ベンゼン、アルキルベンゼン、
ナフタレンおよびアルキルナフタレンからなる群の中か
ら選ばれた少なくとも１つである請求項４記載のＴａ基
材の加工方法。[Claims] (1) T processed by electrolyzing a Ta base material in a solution of an electrolyte having a sulfonic acid group and/or a sulfonic acid group.
a Processing method of base material. (2) The method for processing a Ta base material according to claim 1, wherein the electrolyte is dissolved in a non-aqueous organic solvent. (3) The method for processing a Ta base material according to claim 1, wherein the electrolyte is dissolved in water. (4) The method for processing a Ta base material according to any one of claims 1 to 3, wherein the electrolyte is a sulfonic acid group and/or an aromatic compound having a sulfonic acid group. (5) The aromatic compound is benzene, alkylbenzene,
The method for processing a Ta base material according to claim 4, wherein the Ta base material is at least one selected from the group consisting of naphthalene and alkylnaphthalene.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18641389A JPH0353099A (en) | 1989-07-19 | 1989-07-19 | Method for processing ta base material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18641389A JPH0353099A (en) | 1989-07-19 | 1989-07-19 | Method for processing ta base material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0353099A true JPH0353099A (en) | 1991-03-07 |
Family
ID=16187987
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18641389A Pending JPH0353099A (en) | 1989-07-19 | 1989-07-19 | Method for processing ta base material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0353099A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0993513A4 (en) * | 1997-06-30 | 2001-04-04 | Candescent Tech Corp | Impedance-assisted electrochemical technique and electrochemistry for removing material, particularly excess emitter material in electron-emitting device |
| NL1014727C2 (en) * | 2000-03-23 | 2001-09-25 | Univ Eindhoven Tech | A method for electrolytically polishing a metal in the presence of an electrolyte composition, as well as a molded article obtained by such a method. |
| KR20030047276A (en) * | 2001-12-10 | 2003-06-18 | 김시환 | Compact Disk Case and Sheet for the same, and Method for making the same |
| JP2003526299A (en) * | 2000-03-10 | 2003-09-02 | ノキア コーポレイション | Microphone structure |
| JP2006283189A (en) * | 2005-03-15 | 2006-10-19 | Komag Inc | Electrochemical etching |
| KR100644617B1 (en) * | 2004-06-16 | 2006-11-10 | 삼성전자주식회사 | Apparatus and method for reproducing 7.1 channel audio |
| WO2007026931A1 (en) * | 2005-09-02 | 2007-03-08 | Ebara Corporation | Electrochemical machining method and electrochemical machining apparatus |
| WO2007121999A2 (en) * | 2006-04-26 | 2007-11-01 | Supramol.Lecular Systems, S.L. | Electrolytic solution for the electrochemical polishing of metal articles |
-
1989
- 1989-07-19 JP JP18641389A patent/JPH0353099A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0993513A4 (en) * | 1997-06-30 | 2001-04-04 | Candescent Tech Corp | Impedance-assisted electrochemical technique and electrochemistry for removing material, particularly excess emitter material in electron-emitting device |
| JP2003526299A (en) * | 2000-03-10 | 2003-09-02 | ノキア コーポレイション | Microphone structure |
| NL1014727C2 (en) * | 2000-03-23 | 2001-09-25 | Univ Eindhoven Tech | A method for electrolytically polishing a metal in the presence of an electrolyte composition, as well as a molded article obtained by such a method. |
| WO2001071068A1 (en) * | 2000-03-23 | 2001-09-27 | Technische Universiteit Eindhoven | Method for the electrolytic polishing of a metal in the presence of an electrolyte composition, as well as a moulded element obtained by using such a method |
| KR20030047276A (en) * | 2001-12-10 | 2003-06-18 | 김시환 | Compact Disk Case and Sheet for the same, and Method for making the same |
| KR100644617B1 (en) * | 2004-06-16 | 2006-11-10 | 삼성전자주식회사 | Apparatus and method for reproducing 7.1 channel audio |
| JP2006283189A (en) * | 2005-03-15 | 2006-10-19 | Komag Inc | Electrochemical etching |
| WO2007026931A1 (en) * | 2005-09-02 | 2007-03-08 | Ebara Corporation | Electrochemical machining method and electrochemical machining apparatus |
| WO2007121999A2 (en) * | 2006-04-26 | 2007-11-01 | Supramol.Lecular Systems, S.L. | Electrolytic solution for the electrochemical polishing of metal articles |
| WO2007121999A3 (en) * | 2006-04-26 | 2009-05-22 | Supramol Lecular Systems S L | Electrolytic solution for the electrochemical polishing of metal articles |
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