JPH0351770Y2 - - Google Patents
Info
- Publication number
- JPH0351770Y2 JPH0351770Y2 JP16865486U JP16865486U JPH0351770Y2 JP H0351770 Y2 JPH0351770 Y2 JP H0351770Y2 JP 16865486 U JP16865486 U JP 16865486U JP 16865486 U JP16865486 U JP 16865486U JP H0351770 Y2 JPH0351770 Y2 JP H0351770Y2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- coil pattern
- conductive coil
- insulating layer
- ferromagnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 31
- 230000005291 magnetic effect Effects 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 12
- 230000005294 ferromagnetic effect Effects 0.000 claims description 11
- 239000003302 ferromagnetic material Substances 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 238000005530 etching Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910000859 α-Fe Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
Description
【考案の詳細な説明】
産業上の利用分野
この考案は、DATやコンピユータ等の磁気記
録装置のR/W用薄膜磁気ヘツドの製造方法に関
し、特にその導電コイルの形成技術に関するもの
である。[Detailed Description of the Invention] Industrial Application Field This invention relates to a method of manufacturing a thin film magnetic head for R/W of magnetic recording devices such as DATs and computers, and particularly relates to a technology for forming conductive coils thereof.
従来の技術
最近脚光を浴びつつあるDAT(デイジタル・オ
ーデイオ・テープ・レコーダ)等では、磁気テー
プへの線記録密度は、限界に近づきつつある。こ
れは、DAT用磁気ヘツドがバルクコアであるこ
とに起因している。そこでDAT等では、バルク
ヘツドに代わり、薄膜ヘツドが常用され始めてい
る。BACKGROUND TECHNOLOGY In DAT (Digital Audio Tape Recorder), which has been attracting attention recently, the linear recording density on magnetic tape is approaching its limit. This is due to the fact that the DAT magnetic head is a bulk core. Therefore, thin film heads have begun to be used regularly in place of bulk heads in DATs and the like.
すなわち、薄膜ヘツドは、一般に第8図及び第
9図に示すように下部コアとなるフエライト等の
強磁性体基板1上に、磁気ギヤツプgを形成する
ための非磁性体薄膜2を形成しておき、その薄膜
2上に、例えばスパイラル状に形成する導電コイ
ルパターン3と、薄膜2以外で基板1と直接接合
し、かつ絶縁層4を介して導電コイルパターン3
上に乗り上げて鎖交する上部コアとなる強磁性体
薄膜5とをもうけている。そして、導電コイルパ
ターン3のスパイラル中心に位置する終端部6で
接続し外部へ導出する導出リード7も、同様に絶
縁層4を介して導電コイルパターン3上に乗り上
げている構造である。 That is, as shown in FIGS. 8 and 9, thin film heads generally have a nonmagnetic thin film 2 formed on a ferrite or other ferromagnetic substrate 1 serving as a lower core to form a magnetic gap g. Then, on the thin film 2, a conductive coil pattern 3 is formed, for example, in a spiral shape, and the conductive coil pattern 3 is directly bonded to the substrate 1 through an insulating layer 4 other than the thin film 2.
It has a ferromagnetic thin film 5 which becomes an upper core and interlinks with the upper core. The lead-out lead 7 connected to the terminal end 6 located at the spiral center of the conductive coil pattern 3 and led out to the outside is also structured to similarly ride on the conductive coil pattern 3 via the insulating layer 4.
このように、強磁性体薄膜5や導出リード7を
導電コイルパターン3と絶縁層4で良好に絶縁す
るためには、絶縁層4の上面を平坦化させる技術
が要求される。それで従来より、絶縁層4に乗り
上げるために生じる凹部が出来た場合には、例え
ばポイリイミド系樹脂を埋め込んだりしている。
しかしこのやり方では、原価高を招く等の欠点が
あるので、最近では、絶縁層4の上面の凹凸が生
じた場合、その凸部をバイアススパツタリングに
より消滅させる技術が推進されている。 In this way, in order to insulate the ferromagnetic thin film 5 and the lead-out leads 7 from the conductive coil pattern 3 and the insulating layer 4 well, a technique for flattening the upper surface of the insulating layer 4 is required. Therefore, conventionally, when a recess is formed due to riding on the insulating layer 4, it is filled with, for example, polyimide resin.
However, this method has drawbacks such as increased cost, and therefore, recently, a technique has been promoted in which when unevenness occurs on the upper surface of the insulating layer 4, the unevenness is eliminated by bias sputtering.
考案が解決しようとする問題点
ところが、上述した薄膜磁気ヘツドの絶縁層の
平坦化には、次に記す未解決な問題がある。その
問題とは、絶縁層4の上面を単にバイアススパツ
タリングを行うと、導電コイル3の終端部6の上
部のように、パターン幅寸法が広い所では、当然
絶縁層4の凸部幅寸法も広くなつてしまうので、
凸部を消滅する工数が大きくなつてしまうのであ
る。しかもバイアススパツタリングの後で、エツ
チング処理等によつてコンタクトホールを設けよ
うとする際にも、凸部が消滅しても絶縁が十分な
厚さの絶縁層4を得ようとすれば、必要以上の厚
い層を形成しなければならず、やはり、エツチン
グ工数が増す欠点があつた。Problems to be Solved by the Invention However, there are the following unresolved problems in flattening the insulating layer of the thin film magnetic head described above. The problem is that if bias sputtering is simply performed on the upper surface of the insulating layer 4, the width of the convex portion of the insulating layer 4 will naturally increase in areas where the pattern width is wide, such as the upper part of the terminal end 6 of the conductive coil 3. It also becomes wider, so
This increases the number of man-hours required to eliminate the protrusions. Moreover, even when attempting to provide a contact hole by etching or the like after bias sputtering, if an attempt is made to obtain an insulating layer 4 with a sufficient thickness for insulation even if the convex portion disappears, A thicker layer than necessary had to be formed, which also had the disadvantage of increasing the number of etching steps.
問題点を解決するための手段
この考案は、上記問題点を解決するために、下
部コアとなる強磁性体基板上に、非磁性体薄膜、
導電コイルパターン及び上部コアとなる強磁性体
薄膜を積層して設け、強磁性体基板と強磁性体薄
膜との間に磁気ギヤツプを形成する、いわゆる誘
導型薄膜ヘツドにおいて、導電コイルパターンの
外部導出リードと接続する終端部を、コイルパタ
ーンの中途部の幅寸法とほぼ等しいは歯幅寸法の
櫛形状に設定することを特徴としている。つまり
この考案は、終端部を工夫することにより、バイ
アススパツタリングによる平坦化を徹底させる意
図がある。Means for solving the problem In order to solve the above problem, this invention has a non-magnetic thin film on the ferromagnetic substrate which becomes the lower core.
In a so-called inductive thin film head, a conductive coil pattern and a ferromagnetic thin film serving as an upper core are laminated and a magnetic gap is formed between a ferromagnetic substrate and a ferromagnetic thin film. It is characterized in that the terminal end connected to the lead is set in a comb shape with a tooth width that is approximately equal to the width of the middle part of the coil pattern. In other words, this idea has the intention of thoroughly achieving flattening by bias sputtering by devising the terminal portion.
作 用
この考案によれば、導電コイルパターン終端部
が櫛形状に設定されるので、終端部上を覆う絶縁
層の櫛形状の凸部の幅寸法は、導電コイルパター
ンの中途部幅寸法とほぼ等しくなりしたがつて絶
縁層上面をバイアススパツタリングしても、導電
コイルパターンの全域に亘つて均一な速さで凸部
の除去が行われる。また導電コイルパターンを覆
う絶縁層の平坦化膜厚を、均一かつ必要最小限度
に形成することができる。Effect According to this invention, since the end portion of the conductive coil pattern is set in a comb shape, the width dimension of the comb-shaped convex portion of the insulating layer covering the end portion is approximately the width dimension of the middle portion of the conductive coil pattern. Therefore, even if the upper surface of the insulating layer is subjected to bias sputtering, the convex portions are removed at a uniform speed over the entire area of the conductive coil pattern. Further, the flattening film thickness of the insulating layer covering the conductive coil pattern can be formed uniformly and to the minimum necessary level.
実施例
第1図及び第2図は、この考案の一実施例を示
す誘導型R/W用薄膜ヘツドの平面図及び−
にて切断した断面図で、従来のヘツドを示した第
8図及び第9図と同一呼称は同一図番を付してあ
る。この実施例の薄膜磁気ヘツドは、スパイラル
状に形成した導電コイルパターン3の中央部に位
置する巻回終端部8が、パターン中途部3′の幅
寸法aに等しい歯幅寸法の櫛形に形成されてい
る。このように終端部8が形成されたことにより
生ずる長所を、以下製造工程を参照しながら説明
する。Embodiment FIGS. 1 and 2 are a plan view of an inductive R/W thin film head showing an embodiment of this invention, and FIG.
8 and 9, which show conventional heads, are given the same reference numbers. In the thin film magnetic head of this embodiment, the winding end portion 8 located at the center of the conductive coil pattern 3 formed in a spiral shape is formed in a comb shape with a face width dimension equal to the width dimension a of the pattern midway portion 3'. ing. The advantages resulting from forming the termination portion 8 in this manner will be explained below with reference to the manufacturing process.
まず第3図及び−線にて切断した断面を示
す第4図のように、Mn−Znフエライト基板1上
に、Al2O3の非磁性体薄膜2を、磁気ギヤツプg
のギヤツプ長にほぼ等しい厚さに形成し、さらに
終端部8を櫛形とするスパイラル状導電コイルパ
ターン3を形成する。ここで、導電コイルパター
ン3で囲まれ終端部8近傍の中央部には、上部コ
アを下部コアである基板1と磁気的に接続させる
ために、窓部9を開け、フエライトの地肌を露出
させてある。つぎに第5図に示すように、コイル
絶縁層4として、例えばSiO2薄膜を被着させる。
このSiO2薄膜4の上面は、導電コイルパターン
3に対応する部分が凸部となる凹凸面となつてい
る。それから、PRバイアススパツタリングによ
つて、第6図に示すようにSiO2薄膜4の上面の
凸部を除去し平坦化する。すなわち、PRマグネ
トロンスパツタリング装置を用いて、基板1に負
のバイアス電圧を印加し、ターゲツト材として
SiO2を設定して、破線10で示す凸部を物理的
にエツチング除去する。尚、バイアススパツタリ
ングの原理は、公知であるが、説明すると、概略
次の通りである。まずPRマグネトロンスパツタ
リング装置に、不活性ガスとして、Arガスを導
入しておき、基板1を負電位とするRF電圧を印
加すると、Arガスがイオン化して一旦スパツタ
リング装置内のSiO2のターゲツトへ入射して、
エツチングされ、SiO2薄膜4上へ堆積する。し
かしそのSiO2薄膜4上へは、Arイオンも入射す
るので、凸部10は再度スパツタリングされエツ
チング除去されるのである。この時バイアススパ
ツタリング速度は、凸部10の幅寸法a′に比例す
るので、終端部8の歯幅寸法aは、その上の
SiO2薄膜を完璧に除去できるように、寸法a″を
つまりa″<a′となるように挟すると好適である。
その後第7図の通り、終端部8上のSiO2薄膜を
HF等の酸でエツチングして、櫛形の終端8′を
露出させ、第1,2図に示したように、導出リー
ド7を成膜させて磁気ヘツドを製作する。 First, as shown in FIG. 3 and FIG. 4 showing a cross section taken along the - line, a non-magnetic thin film 2 of Al 2 O 3 is deposited on a Mn--Zn ferrite substrate 1 with a magnetic gap g.
A spiral conductive coil pattern 3 is formed to have a thickness approximately equal to the gap length of the spiral conductive coil pattern 3, and has a comb-shaped end portion 8. Here, in the central part surrounded by the conductive coil pattern 3 and near the termination part 8, a window part 9 is opened to expose the bare surface of the ferrite in order to magnetically connect the upper core to the substrate 1 which is the lower core. There is. Next, as shown in FIG. 5, a thin film of SiO 2 , for example, is deposited as the coil insulating layer 4 .
The upper surface of this SiO 2 thin film 4 is an uneven surface with convex portions corresponding to the conductive coil pattern 3. Then, as shown in FIG. 6, the protrusions on the top surface of the SiO 2 thin film 4 are removed and flattened by PR bias sputtering. That is, using a PR magnetron sputtering device, a negative bias voltage is applied to the substrate 1, and the substrate 1 is sputtered as a target material.
SiO 2 is set, and the convex portions indicated by broken lines 10 are physically removed by etching. The principle of bias sputtering is well known, but it will be briefly explained as follows. First, Ar gas is introduced as an inert gas into the PR magnetron sputtering device, and when an RF voltage is applied that makes the substrate 1 a negative potential, the Ar gas is ionized and once the SiO 2 target in the sputtering device is released. incident on the
It is etched and deposited on the SiO 2 thin film 4. However, since Ar ions are also incident on the SiO 2 thin film 4, the convex portion 10 is sputtered and etched away again. At this time, the bias sputtering speed is proportional to the width dimension a' of the convex part 10, so the face width dimension a of the terminal end part 8 is
In order to completely remove the SiO 2 thin film, it is preferable to set the dimension a″ so that a″<a′.
After that, as shown in Fig. 7, the SiO 2 thin film on the terminal part 8 is
Etching is performed with an acid such as HF to expose the comb-shaped terminal end 8', and as shown in FIGS. 1 and 2, the lead-out leads 7 are formed to form a magnetic head.
考案の効果
この考案を実施すると、従来は幅広でバイアス
スパツタリングによつても絶縁層の平坦化に多大
の工数要していた点が改善され、しかも絶縁層の
厚さぽ最小限定にすることができ、工数低減と製
造歩留り工場が同時に達成できる。またこの考案
は、以前より行われていた樹脂埋め込み平坦化は
行わなくて済むので、当然原価低減にも寄与す
る。またガラスボンデイングやアニールによる高
温度にも安定であり、プロセス設計に幅がもたせ
られる。Effects of the Idea By implementing this idea, the problem that conventionally required a large amount of man-hours to flatten the insulating layer using bias sputtering due to its wide width can be improved, and the thickness of the insulating layer can be reduced to a minimum. It is possible to reduce man-hours and improve manufacturing yield at the same time. Furthermore, since this invention eliminates the need for resin embedding and flattening, which has been done in the past, it naturally contributes to cost reduction. It is also stable at high temperatures during glass bonding and annealing, providing flexibility in process design.
第1図及び第2図は、この考案の一実施例を示
す薄膜磁気ヘツドの平面図及び−線にて切断
した断面図である。第3図〜第7図は、その各製
造工程における薄膜磁気ヘツドの平面図又は断面
図である。第8図及び第9図は、従来の薄膜磁気
ヘツドの平面図及び−線にて切断した断面図
である。
1……基板、2……非磁性体薄膜、3……導電
コイルパターン、4……絶縁層、5……強磁性体
膜、8……終端部、g……磁気ギヤツプ。
1 and 2 are a plan view and a cross-sectional view taken along the - line of a thin film magnetic head showing an embodiment of this invention. FIGS. 3 to 7 are plan views or cross-sectional views of the thin film magnetic head in each manufacturing process. 8 and 9 are a plan view and a cross-sectional view taken along the - line of a conventional thin film magnetic head. DESCRIPTION OF SYMBOLS 1...Substrate, 2...Nonmagnetic thin film, 3...Conductive coil pattern, 4...Insulating layer, 5...Ferromagnetic film, 8...Terminal part, g...Magnetic gap.
Claims (1)
膜、導電コイルパターン、絶縁層、及び上部コア
となる強磁性体薄膜を積層して設け、上記強磁性
体基板と強磁性体薄膜との間に磁気ギヤツプを形
成する磁気ヘツドにおいて、 上記導電コイルパターンの外部導出リードと接
続する終端部を、コイルパターンの中途部の幅寸
法とほぼ等しい歯幅寸法の櫛形状としたことを特
徴とする薄膜磁気ヘツド。[Claims for Utility Model Registration] A non-magnetic thin film, a conductive coil pattern, an insulating layer, and a ferromagnetic thin film that becomes the upper core are laminated on a ferromagnetic substrate that becomes the lower core, and the ferromagnetic material In a magnetic head that forms a magnetic gap between a substrate and a ferromagnetic thin film, the terminal end of the conductive coil pattern connected to the external lead is connected to a comb having a face width approximately equal to the width of the middle part of the coil pattern. A thin film magnetic head characterized by its shape.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16865486U JPH0351770Y2 (en) | 1986-10-31 | 1986-10-31 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16865486U JPH0351770Y2 (en) | 1986-10-31 | 1986-10-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6374707U JPS6374707U (en) | 1988-05-18 |
JPH0351770Y2 true JPH0351770Y2 (en) | 1991-11-07 |
Family
ID=31101728
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16865486U Expired JPH0351770Y2 (en) | 1986-10-31 | 1986-10-31 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0351770Y2 (en) |
-
1986
- 1986-10-31 JP JP16865486U patent/JPH0351770Y2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS6374707U (en) | 1988-05-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5995342A (en) | Thin film heads having solenoid coils | |
US4195323A (en) | Thin film magnetic recording heads | |
US5173826A (en) | Thin film head with coils of varying thickness | |
US4318148A (en) | Thin-film magnetic head | |
JPH07118057B2 (en) | Method of manufacturing thin film magnetic head | |
JPH0351770Y2 (en) | ||
US20020048117A1 (en) | Magnetic recording head with dielectric layer | |
JPS60177418A (en) | Thin film head for vertical magnetic recording and reproduction and its production | |
EP0585930A2 (en) | Thin film magnetic head | |
JP2528860B2 (en) | Manufacturing method of thin film magnetic head | |
JPH07210821A (en) | Thin-film magnetic head and its production | |
JPS6247812A (en) | Thin film magnetic head | |
JPH04356707A (en) | Thin film magnetic head | |
JPS6353615B2 (en) | ||
JP2635670B2 (en) | Thin film magnetic head | |
JPS62164203A (en) | Production of thin film magnetic head | |
SU1531141A1 (en) | Multitrack unit of thin film magnetic heads | |
JPS61110319A (en) | Production of thin-film magnetic head | |
JPS6180513A (en) | Manufacture of thin-film magnetic head | |
JP2747216B2 (en) | Thin film magnetic head | |
JPH0352124B2 (en) | ||
JP2595600B2 (en) | Method for manufacturing thin-film magnetic head | |
JP2002279608A (en) | Thin-film magnetic head and its manufacturing method | |
JPS61296521A (en) | Multitrack magnetic head and its production | |
JPS5857614A (en) | Production of thin film magnetic head |