JPH0351673B2 - - Google Patents
Info
- Publication number
- JPH0351673B2 JPH0351673B2 JP60173940A JP17394085A JPH0351673B2 JP H0351673 B2 JPH0351673 B2 JP H0351673B2 JP 60173940 A JP60173940 A JP 60173940A JP 17394085 A JP17394085 A JP 17394085A JP H0351673 B2 JPH0351673 B2 JP H0351673B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- crucible
- magnetic field
- melt
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17394085A JPS6236097A (ja) | 1985-08-07 | 1985-08-07 | 単結晶の製造方法およびその装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17394085A JPS6236097A (ja) | 1985-08-07 | 1985-08-07 | 単結晶の製造方法およびその装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6236097A JPS6236097A (ja) | 1987-02-17 |
| JPH0351673B2 true JPH0351673B2 (cs) | 1991-08-07 |
Family
ID=15969882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17394085A Granted JPS6236097A (ja) | 1985-08-07 | 1985-08-07 | 単結晶の製造方法およびその装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6236097A (cs) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0362567B1 (en) * | 1988-09-07 | 1992-12-09 | Ishida Scales Mfg. Co., Ltd. | Waterproof automatic weighing apparatus |
| JPH02292428A (ja) * | 1989-04-30 | 1990-12-03 | Kudan Kenchiku Kenkyusho:Kk | 現場打設コンクリート充填型pc梁 |
| JP2013056812A (ja) * | 2011-09-09 | 2013-03-28 | Sharp Corp | 多結晶シリコンインゴットの製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6036392A (ja) * | 1983-08-05 | 1985-02-25 | Toshiba Corp | 単結晶引上装置 |
-
1985
- 1985-08-07 JP JP17394085A patent/JPS6236097A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6236097A (ja) | 1987-02-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5363796A (en) | Apparatus and method of growing single crystal | |
| US3716345A (en) | Czochralski crystallization of gallium arsenide using a boron oxide sealed device | |
| CA1336061C (en) | High-oxygen-content silicon monocrystal substrate for semiconductor devices and production method therefor | |
| JPH11268987A (ja) | シリコン単結晶およびその製造方法 | |
| JP2688137B2 (ja) | シリコン単結晶の引上げ方法 | |
| JP3086850B2 (ja) | 単結晶の成長方法及び装置 | |
| JPH0212920B2 (cs) | ||
| JPS5850953B2 (ja) | 結晶成長法 | |
| US5840116A (en) | Method of growing crystals | |
| JPH0351673B2 (cs) | ||
| JPH03115188A (ja) | 単結晶製造方法 | |
| GB2120954A (en) | Reducing impurity levels in pulled single crystals | |
| JP3750440B2 (ja) | 単結晶引上方法 | |
| JPS5850951B2 (ja) | 結晶の成長方法とこれに用いる結晶成長装置 | |
| JPH0524969A (ja) | 結晶成長装置 | |
| JPS6236096A (ja) | 単結晶の製造方法およびその装置 | |
| JPH0480875B2 (cs) | ||
| JP3018738B2 (ja) | 単結晶製造装置 | |
| Hoshikawa et al. | Control of oxygen concentration in CZ silicon growth | |
| JPS6317291A (ja) | 結晶成長方法及びその装置 | |
| JP2758038B2 (ja) | 単結晶製造装置 | |
| JPH09235192A (ja) | 低酸素濃度単結晶インゴット及び単結晶引上方法 | |
| JPS61158897A (ja) | 化合物半導体単結晶の引上げ方法 | |
| JPH0733304B2 (ja) | 結晶成長方法 | |
| JPH0248492A (ja) | 単結晶成長装置 |