JPH0350808A - Preparation of superstructural nitriding alloy film - Google Patents
Preparation of superstructural nitriding alloy filmInfo
- Publication number
- JPH0350808A JPH0350808A JP18648389A JP18648389A JPH0350808A JP H0350808 A JPH0350808 A JP H0350808A JP 18648389 A JP18648389 A JP 18648389A JP 18648389 A JP18648389 A JP 18648389A JP H0350808 A JPH0350808 A JP H0350808A
- Authority
- JP
- Japan
- Prior art keywords
- alloy film
- superstructured
- nitride alloy
- substrate
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000956 alloy Substances 0.000 title claims abstract description 38
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 38
- 238000005121 nitriding Methods 0.000 title abstract 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 3
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 3
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 3
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 3
- 229910052742 iron Inorganic materials 0.000 claims abstract description 3
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 3
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 3
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 3
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 3
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract 2
- 229910052759 nickel Inorganic materials 0.000 claims abstract 2
- 150000004767 nitrides Chemical class 0.000 claims description 32
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052752 metalloid Inorganic materials 0.000 claims description 2
- 150000002738 metalloids Chemical class 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 9
- 239000010409 thin film Substances 0.000 claims 1
- 230000005389 magnetism Effects 0.000 abstract description 10
- 229910052715 tantalum Inorganic materials 0.000 abstract description 2
- 229910052719 titanium Inorganic materials 0.000 abstract description 2
- 230000008020 evaporation Effects 0.000 abstract 2
- 238000001704 evaporation Methods 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 229910020018 Nb Zr Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910007744 Zr—N Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はＶＴＲ等の磁気ヘッドに適した軟磁性超構造窒
化合金膜の作製方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a soft magnetic superstructure nitride alloy film suitable for magnetic heads such as VTRs.
従来の技術
従来より、第２図に示すように 窒素ガスｌを電磁バル
ブ等によりＡｒ等のスパッタガス２中に周期的に混合し
て、反応スパッタ法を用いて窒化層と非窒化層より成る
超構造窒化合金膜を作製する方法が知られている（特願
昭６１−５４０５４．６２−８９４０２等）。Conventional technology Conventionally, as shown in Fig. 2, nitrogen gas 1 is periodically mixed into sputtering gas 2 such as Ar using an electromagnetic valve, etc., and a nitrided layer and a non-nitrided layer are formed using a reactive sputtering method. A method for producing a superstructured nitride alloy film is known (Japanese Patent Application No. 61-54054.62-89402, etc.).
発明が解決しようとする課題
この方法ではスパッタ装置もしくは蒸着装置の真空槽が
小さくかつ高速真空排気系を用いる場合は比較的問題が
ない力＜、景産装置のように上記の真空槽が大きくなる
と、明確な積層構造を有する超構造窒化合金膜が得られ
ず良好な軟磁性を示しにくくなるといった問題があっｔ
う
本発明（瓜 このような従来技術の課題を解決すること
を目的とする。Problems to be Solved by the Invention In this method, if the vacuum chamber of the sputtering device or vapor deposition device is small and a high-speed vacuum evacuation system is used, there is relatively no problem. However, there is a problem that a superstructured nitride alloy film with a clear layered structure cannot be obtained and it becomes difficult to exhibit good soft magnetic properties.
SUMMARY OF THE INVENTION An object of the present invention is to solve the problems of the prior art.
課題を解決するための手段
本発明では上記の超構造窒化合金膜の作製において、窒
化層形成後に非窒化層を形成する胤 真空槽内の窒素ガ
スが十分排気されるまで所定の待ち時間を設けて、この
間は基板への元素の蒸着を正塩 しかる後に元素の基板
への蒸着を再開して非窒化層を形成し これを繰り返す
ことにより明確な窒化層と非窒化層より成る下記の平均
膜組成の超構造窒化合金膜
Ｔ＝ＭｂＸ、Ｎｄ−−−（１）
を作製するものである（ただしＴはＦｅ、 Ｃｏ、 Ｎ
ｉより成る群から選択された少なくとも１種の金尻Ｍは
Ｎｂ、 Ｚｒ、 Ｔｉ、 Ｔａ、 Ｈｆ、 Ｃｒ、 Ｍ
ｏ、 Ｗ、 Ｍｎより成る群から選択された少なくとも
１種の金ＫＸはＢ、 Ｃ，Ｓｉ、 Ｇｅより成る群より
選択された少なくとも１種の半金属・半導ＥＮはＮ（窒
素）であって、ａ、 ｂ、 ｃ、 ｄは原子パーセント
を表わし それぞれ６５≦ａ≦９５
０≦ｂ≦２０
０≦ｃ≦２０
２≦ｄ≦２０
３≦ｂ十ｃ
ａ十す十ｃ十ｄ＝１００
である）。Means for Solving the Problems In the present invention, in the production of the above-mentioned superstructured nitride alloy film, a predetermined waiting time is provided until the nitrogen gas in the vacuum chamber is sufficiently exhausted after the formation of the nitrided layer. During this time, the element is deposited on the substrate using a normal salt. After that, the element is deposited on the substrate again to form a non-nitrided layer. By repeating this process, the following average film consisting of a clear nitrided layer and a non-nitrided layer is formed. A superstructured nitride alloy film with the composition T=MbX, Nd---(1) is prepared (where T is Fe, Co, Nd).
At least one type of metal shim M selected from the group consisting of i is Nb, Zr, Ti, Ta, Hf, Cr, M
At least one type of gold KX selected from the group consisting of o, W, and Mn is at least one metalloid/semiconductor EN selected from the group consisting of B, C, Si, and Ge. So, a, b, c, and d represent atomic percentages, respectively: 65≦a≦95 0≦b≦20 0≦c≦20 2≦d≦20 3≦b0c a10s10c0d=100 be).
作用
本発明の膜作製法を用いて上記のような組成の超構造窒
化合金膜を作製すれば どのような真空槽の蒸着（スパ
ッタ）装置を用いても安定して優れた軟磁性を示す超構
造窒化合金膜を作製することが可能である。Function: If a superstructured nitride alloy film with the above composition is produced using the film production method of the present invention, it will be possible to produce a superstructured nitride alloy film that stably exhibits excellent soft magnetism no matter what type of vacuum chamber vapor deposition (sputtering) equipment is used. It is possible to produce structural nitride alloy films.
実施例
以下ム 本発明の実施例について図面を参照しながら説
明する。EXAMPLES Below, examples of the present invention will be described with reference to the drawings.
（１）式において合金膜が軟磁性を示すにはａ≦９５．
３≦ｂ＋ ｃ、 −−−（２）である事が
必要であり、合金膜が高飽和磁化を有するには
６５≦ａ、 ｂ≦２０．０≦２０ −−−（３
）である事が必要である。合金膜の内部応力を抑えて膜
が基板より剥離しないためには
ｄ≦２０ −−−（
４）である事が望まし０゜更に熱的に安定な磁気特性を
得るには
２≦ｄ −−−（５）である
ことが必要である。以上（２）−（５）式より（１）式
の組成式かえられる。In equation (1), for the alloy film to exhibit soft magnetism, a≦95.
It is necessary that 3≦b+c, ---(2), and for the alloy film to have high saturation magnetization, 65≦a, b≦20.0≦20 ---(3
). In order to suppress the internal stress of the alloy film and prevent the film from peeling off from the substrate, d≦20 ---(
4) and 0°.In order to obtain more thermally stable magnetic properties, it is necessary that 2≦d---(5). The compositional formula of formula (1) can be changed from formulas (2) to (5) above.
又この窒化合金膜が優れた軟磁気特性を示すに（よ 少
なくとも作製時において膜厚方向即ち成膜方向に窒素元
素等の組成が変調された（広い意味で積層構造膜も含む
）超構造膜となっているこ七が必要であり、良好な軟磁
性を得るためにはこの組成変調波長は１００ＯＡ以下で
あることが望ましい。In addition, this nitride alloy film exhibits excellent soft magnetic properties (at least during fabrication, the composition of nitrogen elements, etc. is modulated in the film thickness direction, that is, in the film formation direction). This compositional modulation wavelength is preferably 100 OA or less in order to obtain good soft magnetism.
ところが第３図に示したような単に窒素ガスを周期的に
真空槽内に導入して反応蒸着により窒化層と非窒化層よ
りなる超構造窒化合金膜を作製しても必ずしも膜は優れ
た軟磁性を示さない。これは真空槽が大きい場合、真空
槽内の窒素ガスが十分に排気されるにはある程度時間が
かかり、単に窒素ガス導入用の電磁弁の０Ｎ１０ＦＦた
けでは界面の明確な窒化層と非窒化層より成る超構造窒
化合金膜が形成されないからである。However, even if a superstructured nitride alloy film consisting of a nitride layer and a non-nitride layer is fabricated by reactive vapor deposition by simply introducing nitrogen gas into a vacuum chamber periodically as shown in Figure 3, the film does not necessarily have excellent softness. Does not exhibit magnetism. This is because when the vacuum chamber is large, it takes some time for the nitrogen gas in the vacuum chamber to be sufficiently exhausted, and if the solenoid valve for nitrogen gas introduction is simply 0N10FF, the interface between the nitrided layer and the non-nitrided layer is This is because a superstructured nitride alloy film consisting of the above structure is not formed.
従って第１図でｔで示したような待ち時間を設け、この
間は基板の前のシャッターを閉よ 基板上に合金膜が蒸
着されないようにする本発明の膜作製法を用いれば界面
の明確な超構造窒化膜を形成することができ、得られた
膜は優れた軟磁性を示す。Therefore, provide a waiting time as indicated by t in Figure 1, and close the shutter in front of the substrate during this time.If the film fabrication method of the present invention, which prevents the alloy film from being deposited on the substrate, is used, the interface will be clearly defined. A superstructured nitride film can be formed, and the resulting film exhibits excellent soft magnetism.
この待ち時間は非窒化層の形成の前に必ず設ける必要が
あるバ 更に同図にｔ′で示したように窒化層の形成の
前にもこれを設けてこの間は基板上に合金膜が蒸着され
ないようにすれば膜の特性の装置によるバラツキをより
小さくすることができム又作製時において得られた超構
造窒化合金膜は必ずしも良好な軟磁性を示さない。この
場合は通常３００℃以上８００℃以下の磁界中もしくは
無磁界中熱処理によりその軟磁性を改善することが可能
である。This waiting time must be provided before the formation of the non-nitrided layer.Furthermore, as shown at t' in the figure, this waiting time is also provided before the formation of the nitrided layer, during which time the alloy film is deposited on the substrate. If this is avoided, it is possible to further reduce variations in film properties depending on the equipment.Furthermore, the superstructured nitride alloy film obtained at the time of fabrication does not necessarily exhibit good soft magnetism. In this case, it is possible to improve the soft magnetism by heat treatment in a magnetic field or in the absence of a magnetic field, usually at a temperature of 300° C. or more and 800° C. or less.
以下さら（ミ 具体的実施例の説明を行なう。Hereinafter, specific examples will be explained.
〈実施例１〉
ターゲットに５ｘ１５” （インチ）のＣｏ−Ｎｂ−Ｚ
ｒ及びＦ ｅ −Ｎ ｂ −８合金板を用１．ｋ ス
パッタＡｒガス中にＮ２ガスを周期的に混合することに
より、層厚１００Ａの非窒化層と窒化層より成る［Ｃｏ
−Ｎｂ−Ｚｒ／Ｃｏ−Ｎｂ−Ｚｒ−Ｎ］及び［Ｆｅ−Ｎ
ｂ−Ｂ／Ｆｅ−Ｎｂ−Ｂ−Ｎコなる平均膜組成がＣｏ？
ｅ Ｎｂａ ｚｒｓ Ｎ＋ １！及びＦｅ７ａＮｂｅ
Ｂ＋ｓＮ＋ｓなる超構造窒化合金膜を反応スパッタ法に
より水冷したガラス基板上に作製し九 なお成膜時のス
パッタガス圧は１ｘｌＯ−２Ｔｏｒｒとし窒素混合時の
窒素分圧はＩＯＸとじへ この時第２図に示したような
従来の窒素混合方法と第１図に示したような本発明方法
を用いて膜作製を行い作製時及び熱処理後の膜の磁気特
性の比較を行なっ九
結果を表−１及び表−２に示す。表に示した結果より本
発明の超構造窒化合金膜作製法が優れた軟磁性を示す膜
を得るのに有効なことがわかる。<Example 1> 5x15” (inch) Co-Nb-Z on target
r and Fe-Nb-8 alloy plate 1. k By periodically mixing N2 gas in the sputtered Ar gas, a [Co
-Nb-Zr/Co-Nb-Zr-N] and [Fe-N
The average film composition of b-B/Fe-Nb-B-N is Co?
e Nba zrs N+ 1! and Fe7aNbe
A superstructured nitride alloy film of B+sN+s was fabricated on a water-cooled glass substrate by reactive sputtering.The sputtering gas pressure during film formation was 1xlO-2Torr, and the nitrogen partial pressure when nitrogen was mixed was set to IOX. Films were fabricated using the conventional nitrogen mixing method as shown in Figure 1 and the method of the present invention as shown in Figure 1, and the magnetic properties of the films during fabrication and after heat treatment were compared.The results are shown in Tables 1 and 1. It is shown in Table-2. From the results shown in the table, it can be seen that the method for producing a superstructured nitride alloy film of the present invention is effective in obtaining a film exhibiting excellent soft magnetism.
なおこの待ち時間（ｔ、 ｔｌ ）は装置の大きさや真
空排気系の能力に応じてきめればよくこの実施例はあく
まで一例である。又スパッタ法に限らず反応蒸着法を用
いたこのような超構造窒化合金膜の作製に本発明法が適
用できることはその原理からして明かである。Note that this waiting time (t, tl) may be determined depending on the size of the apparatus and the capacity of the evacuation system, and this embodiment is merely an example. Furthermore, it is clear from its principle that the method of the present invention can be applied to the production of such a superstructured nitride alloy film using not only the sputtering method but also the reactive vapor deposition method.
表−１
表−２
発明の効果
以上述べたように 本発明は優れた軟磁性を示す超構造
窒化合金膜を装置の大きさの如何にかかわらず安定に作
製することを可能にするものである。Table 1 Table 2 Effects of the Invention As stated above, the present invention makes it possible to stably produce a superstructured nitride alloy film exhibiting excellent soft magnetism, regardless of the size of the device. .
第１図は本発明の超構造窒化合金膜作製時の窒素ガス混
合法を示すタイミング医 第２図は従来法の超構造窒化
合金膜作製時の窒素ガスの混合方法を示すタイミング医
第３図（よ 超構造窒化合金膜作製時の窒素ガス混合
装置の略示断面図である。
ｔ、 ｔｌ・・・非窒化層を形成する前と窒化層を形成
する前にシャッターを閉じて基板への合金膜形成を中断
する待ち時肌Fig. 1 is a timing diagram showing the method of mixing nitrogen gas when producing a superstructured nitride alloy film according to the present invention. Fig. 2 is a timing diagram showing a method of mixing nitrogen gas when producing a superstructured nitride alloy film using the conventional method. (This is a schematic cross-sectional view of a nitrogen gas mixing apparatus during the production of a superstructured nitride alloy film. t, tl... Before forming a non-nitrided layer and before forming a nitrided layer, the shutter is closed and the air is heated to the substrate. Waiting time to interrupt alloy film formation
Claims (4)
、窒化層と非窒化層よりなる超構造窒化合金膜を基板上
に形成する超構造窒化合金膜の作成方法において、窒化
層形成後に非窒化層を形成する際、真空槽内の窒素ガス
が十分排気されるまで所定の待ち時間を設けて基板への
元素の蒸着を止め、しかる後に元素の基板への蒸着を再
開して非窒化層を形成し、これを繰り返すことにより下
記の平均膜組成の超構造窒化合金膜 Ｔ＿ａＭ＿ｂＸ＿ｃＮ＿ｄ を作製することを特徴とする超構造窒化合金膜の作製方
法（ただしＴはＦｅ，Ｃｏ，Ｎｉより成る群から選択さ
れた少なくとも１種の金属、ＭはＮｂ，Ｚｒ，Ｔｉ，Ｔ
ａ，Ｈｆ，Ｃｒ，Ｍｏ，Ｗ，Ｍｎより成る群から選択さ
れた少なくとも１種の金属、ＸはＢ，Ｃ，Ｓｉ，Ｇｅよ
り成る群より選択された少なくとも１種の半金属・半導
体、ＮはＮ（窒素）であってａ，ｂ，ｃ，ｄは原子パー
セントを表わし、それぞれ ６５≦ａ≦９３ ０≦ｂ≦２０ ０≦ｃ≦２０ ２≦ｄ≦２０ ３≦ｂ＋ｃ ａ＋ｂ＋ｃ＋ｄ＝１００ である）。(1) Nitrogen layer formation in a method for creating a superstructured nitride alloy film in which a superstructured nitride alloy film consisting of a nitrided layer and a non-nitrided layer is formed on a substrate by periodically mixing nitrogen gas and reacting with the deposited elements. When forming a non-nitrided layer later, the vapor deposition of elements onto the substrate is stopped after a predetermined waiting time until the nitrogen gas in the vacuum chamber is sufficiently exhausted, and then the vapor deposition of elements onto the substrate is resumed to form a non-nitrided layer. A method for producing a superstructured nitride alloy film, characterized by forming a nitride layer and repeating this process to produce a superstructured nitride alloy film T_aM_bX_cN_d having the following average film composition (where T is composed of Fe, Co, and Ni). at least one metal selected from the group M is Nb, Zr, Ti, T
a, Hf, Cr, Mo, W, at least one metal selected from the group consisting of Mn, X at least one metalloid/semiconductor selected from the group consisting of B, C, Si, Ge, N is N (nitrogen), and a, b, c, and d represent atomic percent, respectively: 65≦a≦93 0≦b≦20 0≦c≦20 2≦d≦20 3≦b+c a+b+c+d=100 ).
とを特徴とする請求項１記載の超構造窒化合金膜の作製
方法。(2) The method for producing a superstructured nitride alloy film according to claim 1, characterized in that a predetermined waiting time is provided also when forming the nitride layer.
とする請求項１または２記載の超構造窒化合金膜の作製
方法。(3) The method for producing a superstructured nitride alloy film according to claim 1 or 2, characterized in that a sputtering method is used as the thin film forming method.
金膜を３００℃以上８００℃以下で熱処理して軟磁気特
性を改善することを特徴とする超構造窒化合金膜の作製
方法。(4) A method for producing a superstructured nitride alloy film, characterized in that the superstructured nitride alloy film produced according to claim 1, 2, or 3 is heat-treated at a temperature of 300°C or more and 800°C or less to improve soft magnetic properties. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18648389A JPH0350808A (en) | 1989-07-19 | 1989-07-19 | Preparation of superstructural nitriding alloy film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18648389A JPH0350808A (en) | 1989-07-19 | 1989-07-19 | Preparation of superstructural nitriding alloy film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0350808A true JPH0350808A (en) | 1991-03-05 |
Family
ID=16189277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18648389A Pending JPH0350808A (en) | 1989-07-19 | 1989-07-19 | Preparation of superstructural nitriding alloy film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0350808A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09503025A (en) * | 1993-09-24 | 1997-03-25 | イノベイティブ スパッタリング テクノロジー エヌ．ヴイ．（アイ．エス．ティー．） | Stacked metal structures |
| JP2008536541A (en) * | 2005-03-15 | 2008-09-11 | セブ ソシエテ アノニム | Easy-to-clean cooking surfaces and household appliances including such surfaces |
-
1989
- 1989-07-19 JP JP18648389A patent/JPH0350808A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09503025A (en) * | 1993-09-24 | 1997-03-25 | イノベイティブ スパッタリング テクノロジー エヌ．ヴイ．（アイ．エス．ティー．） | Stacked metal structures |
| JP2008536541A (en) * | 2005-03-15 | 2008-09-11 | セブ ソシエテ アノニム | Easy-to-clean cooking surfaces and household appliances including such surfaces |
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