JPH0350141A - Method for bonding silicon and glass - Google Patents
Method for bonding silicon and glassInfo
- Publication number
- JPH0350141A JPH0350141A JP18524289A JP18524289A JPH0350141A JP H0350141 A JPH0350141 A JP H0350141A JP 18524289 A JP18524289 A JP 18524289A JP 18524289 A JP18524289 A JP 18524289A JP H0350141 A JPH0350141 A JP H0350141A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- substrate
- silicon
- wafer
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011521 glass Substances 0.000 title claims abstract description 77
- 239000010703 silicon Substances 0.000 title claims abstract description 53
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims description 17
- 230000005684 electric field Effects 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 47
- 239000000758 substrate Substances 0.000 abstract description 43
- 229910001413 alkali metal ion Inorganic materials 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005336 cracking Methods 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 230000035882 stress Effects 0.000 description 15
- 238000005304 joining Methods 0.000 description 7
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 5
- 239000005297 pyrex Substances 0.000 description 5
- 239000012141 concentrate Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 230000006355 external stress Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
シリコンとガラスとをガラスの軟化温度以下で接合する
シリコンとガラスとの接合方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method of joining silicon and glass, which joins silicon and glass at a temperature below the softening temperature of the glass.
例えば半導体デバイスの製造工程において、シリコンウ
ェハとガラス基板とを接合する場合、接合体に残る応力
歪みを少なくするために、ガラスの軟化温度以下で接合
することが望ましい。例えば特公昭５３−２８７４’ｉ
’号公報に示された陽極接合方法が一般に行われている
。For example, in the process of manufacturing semiconductor devices, when bonding a silicon wafer and a glass substrate, it is desirable to bond at a temperature below the softening temperature of the glass in order to reduce stress strain remaining in the bonded body. For example, Tokuko Sho 53-2874'i
The anodic bonding method shown in the ' publication is generally used.
７１３図は従来のシリコンとガラスとの陽極接合を説明
するための断面図である０図において、（１）はシリコ
ンウェハ、（２）はシリコンウェハ（１）に重ネたガラ
ス基板で、一般にパイレックスガラスが用いられる。（
３）はシリコンウェハに付けた第１の電極、（４）はガ
ラス基板（２）に付けた第２の電極、（５）はシリコン
ウェハ（１）とガラス基板（２）とを加熱するためのヒ
ータである。Figure 713 is a cross-sectional view for explaining the conventional anodic bonding of silicon and glass. Pyrex glass is used. (
3) is the first electrode attached to the silicon wafer, (4) is the second electrode attached to the glass substrate (2), and (5) is for heating the silicon wafer (1) and the glass substrate (2). This is a heater.
次に、接合方法について説明する。先ず、ガラス基板（
２）の電気伝導度を上げるために、ヒータ（５）でシリ
コンウェハ（１）とガラス基板（２）とをガラス基板（
２）の軟化温度以下の適当な温度まで加熱する。Next, the joining method will be explained. First, the glass substrate (
In order to increase the electrical conductivity of the silicon wafer (1) and the glass substrate (2), the heater (5) is used to connect the silicon wafer (1) and the glass substrate (2).
2) Heat to an appropriate temperature below the softening temperature.
次に、第１の電ＦＭ （３）を正にＭ２の電極（４）を
負にして、電流を流してシリコンウェハ（１）とガラス
基板（２）とを接合する。例えばガラス基板（２）がパ
イレックスガラスの場合、４００℃に加熱し、ユ０ＩＪ
Ａ／正２の電流を１分間通じて接合を行う。Next, the first electrode FM (3) is made positive and the electrode (4) of M2 is made negative, and a current is applied to bond the silicon wafer (1) and the glass substrate (2). For example, if the glass substrate (2) is Pyrex glass, heat it to 400°C and
Bonding is performed by passing a current of A/positive 2 for 1 minute.
パイレックスガラスから成るガラス基板（２）の熱膨張
係数は、シリコンウェー・（１）よシ僅かに小さいので
、接合後温度が常温に戻った時、シリコンウェハ（１）
の方がガラス基板（２）よシ体積の収縮量が少し大きい
。従って、シリコンウェハ（１）とガラス基板（２）と
の接合体には、捩合部のガラス基板（２）界面に僅かに
圧縮応力が残留する。The thermal expansion coefficient of the glass substrate (2) made of Pyrex glass is slightly smaller than that of the silicon wafer (1), so when the temperature returns to room temperature after bonding, the silicon wafer (1)
The volume shrinkage of the glass substrate (2) is slightly larger than that of the glass substrate (2). Therefore, in the bonded body of the silicon wafer (1) and the glass substrate (2), a slight compressive stress remains at the interface of the glass substrate (2) at the twisted portion.
また、シリコンウェハ（１）からガラス基板（２）へ電
流が流れると、ガラス中のアルカリ金属イオンが負極で
ある第２の電極（４）の方へ移動するので、ガラス基板
（２）表面の第２の電極（４）近傍にアルカリ金属が集
中する。アルカリ金属はガラス構造中の空隙（自由体積
）に入シ込むので、温度が下がってもガラス基板（２〕
表面の第２の電極（４）近傍は、他の部分よシ体積の収
縮量が小さい。従って、接合体の接合部には第２の電極
（４）直下のガラス基板（２）界面に圧縮応力が集中し
て残留する。Furthermore, when a current flows from the silicon wafer (1) to the glass substrate (2), the alkali metal ions in the glass move toward the second electrode (4), which is the negative electrode, so that the surface of the glass substrate (2) Alkali metal concentrates near the second electrode (4). Alkali metals enter the voids (free volume) in the glass structure, so even if the temperature drops, the glass substrate (2)
The amount of volume shrinkage near the second electrode (4) on the surface is smaller than that in other parts. Therefore, compressive stress concentrates and remains at the interface of the glass substrate (2) directly under the second electrode (4) at the joint of the joined body.
上記で説明した２種類の圧縮応力が本なって、接合体の
接合部のパイレックスから成るカラス基板（２）表面に
は第４図に示すような分布の圧縮応力が残留する。この
残留応力により、シリコンウェハ（１）とパイレックス
ガラス基板（２）との接合体は第５図のように変形する
。As a result of the two types of compressive stress explained above, a compressive stress with a distribution as shown in FIG. 4 remains on the surface of the glass substrate (2) made of Pyrex at the joint part of the joined body. Due to this residual stress, the bonded body of the silicon wafer (1) and the Pyrex glass substrate (2) is deformed as shown in FIG.
従来のシリコンとガラスの接合は以上のように行われて
いるので、シリコンとガラスの接合体に応力が残留して
、接合体に変形や亀裂が発生する等の問題点があった。Since the conventional bonding of silicon and glass is carried out as described above, there have been problems such as stress remaining in the bonded body of silicon and glass, causing deformation and cracks in the bonded body.
この発明は上記のような問題点を解決するためになされ
たもので、シリコンとガラスとの接合体に変形や亀裂が
発生しないシリコンとガラスとの接合方法を得ることを
目的とする。This invention was made to solve the above-mentioned problems, and aims to provide a method for joining silicon and glass that does not cause deformation or cracks in the joined body of silicon and glass.
この発明に係るシリコンとガラスとの接合方法は、シリ
コンとシリコンよシ少なくとも大きい熱膨張係数を有す
るガラスとを接触させる工程と、上記シリコンとガラス
とを上記ガラスの軟化温度以下の温度に加熱する工程と
、上記シリコンとガラスとの接触部を通じてシリコンか
らガラスへ平等電界により正の電流を流して上記シリコ
ンとガラスとを接合する工程とを備えるようにしたもの
である。The method for bonding silicon and glass according to the present invention includes the steps of bringing silicon into contact with glass having a coefficient of thermal expansion at least larger than that of silicon, and heating the silicon and glass to a temperature below the softening temperature of the glass. and a step of bonding the silicon and glass by flowing a positive current from the silicon to the glass using a uniform electric field through the contact portion between the silicon and the glass.
この発明におけるシリコンとガラスとの接合方法は、シ
リコンとシリコンよシ少なくとも大きい熱膨張係数を有
するガラスを接合して、接合部のガラス界面に発生する
圧縮応力と引つ張シ応力とを相殺する。The method of joining silicon and glass in the present invention involves joining silicon and glass having a coefficient of thermal expansion at least as large as that of silicon, and canceling out the compressive stress and tensile stress generated at the glass interface at the joint. .
以下、この発明の一実施例を第１図について説明する。 An embodiment of the present invention will be described below with reference to FIG.
図において、（１）は直径１００ｍｍ、厚み０．４ｍｍ
。In the figure, (1) has a diameter of 100 mm and a thickness of 0.4 mm.
.
熱膨張係＆ ３４，５ ＸユＯ−７／℃のシリコンウェ
ハ、（２）は直径１００ｍｍ ｓ Ｒ−み３ｍｍ 、熱
＃張係数３８．５ Ｘ Ｎｏ−７７’Ｃのガラス基板、
（３）及び（４）はそれぞれ表面を平滑にしたシリコン
板を用いた第１及び第２の電極、（５）はヒータでろる
。A silicon wafer with a thermal expansion coefficient of 34.5 x 0-7/℃, (2) a glass substrate with a diameter of 100 mm and a diameter of 3 mm and a thermal tensile coefficient of 38.5 x No-77'C;
(3) and (4) are first and second electrodes each using a silicon plate with a smooth surface, and (5) is heated by a heater.
次に接合方法について説明する。先ず、ヒータ（５）で
シリコンクエバ（１）とカラス基板（２１（ｉ−４２０
”Ｃに加熱する。次にシリコンクエバ（１）側の第１の
電極（３）を正に、ガラス基板（２）側の第２の電極（
４）を負にして、直流電圧フＯＯＶを１５分間加えて、
シリコンクエバ（１）とガラス基板（２）とを接合する
。この接合体のガラス基板（２）に残留する応力は、第
２図に示すようにゼロになった。これは、ガラス基板（
２）の熱膨張係数がシリコンクエバ（１）よシ僅かに大
きいので、接合後温度が常温に戻った時、ガラス基板（
２）の方がシリコンクエバ（１）よシ体積の収縮量が大
きくなる。その接合体の接合部においてガラス基板（２
）の界面に引つ５Ｍシ応力が発生して、陽Ｗｉ接合時に
アルカリ金属イオンが第２の電極（４）付近へ集中する
ことにより接合部のガラス基板（２）界面に発生する圧
縮応力を相殺するので、接合体のガラス基板（２）に残
留する応力がゼロになったのである。Next, the joining method will be explained. First, heat the silicon cube (1) and the glass substrate (21 (i-420) using the heater (5).
Next, the first electrode (3) on the silicon substrate (1) side is directly connected to the second electrode (2) on the glass substrate (2) side.
4) Make it negative and apply DC voltage FOV for 15 minutes,
A silicon cube (1) and a glass substrate (2) are bonded. The stress remaining in the glass substrate (2) of this bonded body became zero as shown in FIG. This is a glass substrate (
The coefficient of thermal expansion of 2) is slightly larger than that of silicon Cueva (1), so when the temperature returns to room temperature after bonding, the glass substrate (
2) has a larger shrinkage amount than silicon cube (1). The glass substrate (2
), and alkali metal ions concentrate near the second electrode (4) during positive Wi bonding, thereby reducing the compressive stress generated at the interface of the glass substrate (2) at the bonding part. Since they cancel each other out, the stress remaining in the glass substrate (2) of the bonded body becomes zero.
また、上記一実施例と同じで、ただガラス基板（２）の
厚みが１ｍｍ、熱膨張係数が３（５，５Ｘ １０イ／℃
であることのみ異なる場合も、接合体の残留応力はゼロ
であった。Also, it is the same as the above example, except that the thickness of the glass substrate (2) is 1 mm, and the coefficient of thermal expansion is 3 (5.5X 10 I/℃).
Even when the only difference was that , the residual stress in the bonded body was zero.
ここで、シリコンウェハ（１）とガラス基板（２）の加
熱症度は、ガラスの軟化点以下でめればよいが、あま夛
加熱湿度が低いとガラスの電気伝尋度が小さくなシ捩合
時間が長くな９、あま）加＃！温度が高いと少しの外部
応力で変形し易くなるので、４００℃〜４５０℃が好適
である。Here, the heating degree of the silicon wafer (1) and the glass substrate (2) should be equal to or lower than the softening point of the glass, but if the heating humidity is low, the electrical conductivity of the glass will be low. The meeting time is long 9, Ama) Add #! If the temperature is high, it becomes easy to deform due to a small amount of external stress, so a temperature of 400°C to 450°C is suitable.
以上のように、この発明によれば、シリコンとシリコン
より少なくとも大きい熱膨張係数を有するガラスとを接
触させる工程と、上記シリコンとガラスとの接触部を通
じてシリコンからガラスへ平等電界によ）正の電流を流
して上記シリコンとガラスとを接合する工程とを備える
ようにしたので、接合体に変形や亀裂が発生しないシリ
コンとガラスとの嵌合方法が得られる効果がある。As described above, according to the present invention, the step of bringing silicon into contact with glass having a coefficient of thermal expansion at least larger than that of silicon, and the step of bringing silicon into contact with glass having a coefficient of thermal expansion at least larger than that of silicon, and applying a positive electric field from silicon to glass through the contact portion between silicon and glass. Since the present invention includes the step of joining the silicon and glass by applying an electric current, it is possible to obtain a method of fitting silicon and glass that does not cause deformation or cracks in the joined body.
第１図はこの発明の一実施例による接合方法を示す断面
図、第２図はこの発明の一実施例による接合体のガラス
基板に残留する応力の分布を示す図、第３図は従来の方
法による接合方法を示す断面図、第４図は従来の接合方
法による欲合体の接合部のガラス基板界面に残留する応
力の分布を示す図、第５図は従来の接合方法による接合
体の変形の一例を示す断面図である。
図において、（１）はシリコンクエバ、（２Ｈｄガラス
基板、（３）及び（４）はそれぞれ第１及び第２の電極
、（５）はヒータである。
なお、図中、同一符号は同一、又は相当部分を示す。FIG. 1 is a cross-sectional view showing a bonding method according to an embodiment of the present invention, FIG. 2 is a diagram showing the distribution of stress remaining in the glass substrate of a bonded body according to an embodiment of the present invention, and FIG. 3 is a cross-sectional view showing a bonding method according to an embodiment of the present invention. Fig. 4 is a cross-sectional view showing the bonding method using the conventional bonding method. Fig. 4 is a diagram showing the distribution of stress remaining at the glass substrate interface at the bonded portion of the lustrous body formed by the conventional bonding method. Fig. 5 is a diagram showing the deformation of the bonded body by the conventional bonding method. It is a sectional view showing an example. In the figure, (1) is a silicon cube, (2Hd glass substrate), (3) and (4) are the first and second electrodes, respectively, and (5) is a heater. In the figure, the same reference numerals are the same or A considerable portion is shown.
Claims (1)
有するガラスとを接触させる工程と、上記シリコンとガ
ラスとを上記ガラスの軟化温度以下の温度に加熱する工
程と、上記シリコンとガラスとの接触部を通じてシリコ
ンからガラスへ平等電界により正の電流を流して上記シ
リコンとガラスとを接合する工程とを備えたことを特徴
とするシリコンとガラスとの接合方法。contacting silicon with glass having a coefficient of thermal expansion at least larger than silicon; heating the silicon and glass to a temperature below the softening temperature of the glass; A method for bonding silicon and glass, comprising the step of bonding the silicon and glass by flowing a positive current through the glass using a uniform electric field.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18524289A JP2870822B2 (en) | 1989-07-17 | 1989-07-17 | Bonding method between silicon and glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18524289A JP2870822B2 (en) | 1989-07-17 | 1989-07-17 | Bonding method between silicon and glass |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0350141A true JPH0350141A (en) | 1991-03-04 |
| JP2870822B2 JP2870822B2 (en) | 1999-03-17 |
Family
ID=16167377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18524289A Expired - Lifetime JP2870822B2 (en) | 1989-07-17 | 1989-07-17 | Bonding method between silicon and glass |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2870822B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996011806A1 (en) * | 1994-10-13 | 1996-04-25 | Michael Harz | Process for changing the bend of anodically bonded flat composite bodies made of glass and metal or semiconductor materials |
| US5900671A (en) * | 1994-07-12 | 1999-05-04 | Mitsubishi Denki Kabushiki Kaisha | Electronic component including conductor connected to electrode and anodically bonded to insulating coating |
| DE19525388B4 (en) * | 1994-07-12 | 2005-06-02 | Mitsubishi Denki K.K. | Electronic component with anodically bonded lead frame |
| DE19549750B4 (en) * | 1994-07-12 | 2005-07-14 | Mitsubishi Denki K.K. | Electronic component with anodisch gebontetem lead frame |
| DE112011104798T5 (en) | 2011-01-31 | 2013-12-19 | Suzuki Motor Corporation | Drive control device for hybrid vehicle |
| CN110246769A (en) * | 2019-05-10 | 2019-09-17 | 太原理工大学 | Based on cationic electroconductive metal and glass surface original position metallization eutectic bonding method |
-
1989
- 1989-07-17 JP JP18524289A patent/JP2870822B2/en not_active Expired - Lifetime
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6181009B1 (en) | 1994-07-12 | 2001-01-30 | Mitsubishi Denki Kabushiki Kaisha | Electronic component with a lead frame and insulating coating |
| US5900671A (en) * | 1994-07-12 | 1999-05-04 | Mitsubishi Denki Kabushiki Kaisha | Electronic component including conductor connected to electrode and anodically bonded to insulating coating |
| US6087201A (en) * | 1994-07-12 | 2000-07-11 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing ball grid array electronic component |
| US6133069A (en) * | 1994-07-12 | 2000-10-17 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing the electronic using the anode junction method |
| US6268647B1 (en) | 1994-07-12 | 2001-07-31 | Mitsubishi Denki Kabushiki Kaisha | Electronic component with an insulating coating |
| US6310395B1 (en) | 1994-07-12 | 2001-10-30 | Mitsubishi Denki Kabushiki Kaisha | Electronic component with anodically bonded contact |
| DE19525388B4 (en) * | 1994-07-12 | 2005-06-02 | Mitsubishi Denki K.K. | Electronic component with anodically bonded lead frame |
| DE19549750B4 (en) * | 1994-07-12 | 2005-07-14 | Mitsubishi Denki K.K. | Electronic component with anodisch gebontetem lead frame |
| JPH10507415A (en) * | 1994-10-13 | 1998-07-21 | ハルツ，ミカエル | Method of changing the curvature of anodically bonded two-dimensional composite of glass and metal or semiconductor material |
| US5827343A (en) * | 1994-10-13 | 1998-10-27 | Engelke; Heinrich | Process for changing the bend of anodically bonded flat composite bodies made of glass and metal or semiconductor materials |
| WO1996011806A1 (en) * | 1994-10-13 | 1996-04-25 | Michael Harz | Process for changing the bend of anodically bonded flat composite bodies made of glass and metal or semiconductor materials |
| DE112011104798T5 (en) | 2011-01-31 | 2013-12-19 | Suzuki Motor Corporation | Drive control device for hybrid vehicle |
| CN110246769A (en) * | 2019-05-10 | 2019-09-17 | 太原理工大学 | Based on cationic electroconductive metal and glass surface original position metallization eutectic bonding method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2870822B2 (en) | 1999-03-17 |
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