JPH0345506A - High-oxygen high beta-type silicon nitride fine powder and production thereof - Google Patents

High-oxygen high beta-type silicon nitride fine powder and production thereof

Info

Publication number
JPH0345506A
JPH0345506A JP17987389A JP17987389A JPH0345506A JP H0345506 A JPH0345506 A JP H0345506A JP 17987389 A JP17987389 A JP 17987389A JP 17987389 A JP17987389 A JP 17987389A JP H0345506 A JPH0345506 A JP H0345506A
Authority
JP
Japan
Prior art keywords
silicon nitride
oxygen
fine powder
type
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17987389A
Other languages
Japanese (ja)
Inventor
Haruyoshi Kuwabara
治由 桑原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP17987389A priority Critical patent/JPH0345506A/en
Publication of JPH0345506A publication Critical patent/JPH0345506A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enable sure production of high-oxygen and high beta-type silicon nitride fine powder excellent in calcinability by treating low-oxygen and high beta-type silicon nitride fine powder with a mixed acid of hydrofluoric acid and nitric acid. CONSTITUTION:High-oxygen high beta-type silicon nitride fine powder with >0.6 to <=4wt.% oxygen content, 50-100wt.% beta-type content and >=10m<2>/g BET specific surface area is obtained by the following method. That is silicon nitride fine powder with <=0.6wt.% oxygen content and 50-100wt.% beta-type content is treated with a mixed acid of hydrofluoric acid in an amount of >30 to <=70 pts.wt. based on 100 pts.wt. silicon nitride and nitric acid. The nitric acid is preferably used in an amount of 150-200 pts.wt. based on 100 pts.wt. silicon nitride. The treatment with the mixed acid is carried out at about 60-80 deg.C temperature for about 1-2hr.

Description

【発明の詳細な説明】 及栗り立札五立夏 本発明は、β型の比率が高いと共に酸素含有量が多い窒
化ケイ素微粉末及び該窒化ケイ素を製造する方法に関す
る。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a fine silicon nitride powder having a high proportion of β type and a high oxygen content, and a method for producing the silicon nitride.

更来立技先 従来、窒化ケイ素焼結体は焼結性や強度などの点から主
にα型窒化ケイ素粉末を用いて製造されてきたが、最近
では、β型窒化ケイ素を用いるとα型窒化ケイ素粉末を
用いる場合に比較してより低い焼結温度で良好な焼結性
が得られることから。
Previously, silicon nitride sintered bodies have mainly been produced using α-type silicon nitride powder from the viewpoint of sinterability and strength, but recently, when using β-type silicon nitride, α-type This is because good sinterability can be obtained at a lower sintering temperature than when using silicon nitride powder.

β型窒化ケイ素を用いて窒化ケイ素焼結体を得ることが
望まれている。また、焼結の際、窒化ケイ素粉末中の不
純物が焼結性に影響を与えることが知られており、特に
窒化ケイ素中の酸素含有量は大きな影響を与えることが
認められ、α型窒化ケイ素では酸素含有量が1〜3%で
あることが好ましいとされている。
It is desired to obtain a silicon nitride sintered body using β-type silicon nitride. In addition, it is known that impurities in silicon nitride powder affect sinterability during sintering, and the oxygen content in silicon nitride has been found to have a particularly large effect, and α-type silicon nitride It is said that the oxygen content is preferably 1 to 3%.

このため、β型であり、しかも高酸素の窒化ケイ素粉末
が窒化ケイ素焼結体を得る点で要望される。
Therefore, silicon nitride powder of β type and high oxygen content is desired in order to obtain a silicon nitride sintered body.

従来より、窒化ケイ素粉末の製造方法としては。Conventionally, as a method for producing silicon nitride powder.

金属ケイ素粉末の直接窒化法、シリカ還元法。Direct nitriding method of metal silicon powder, silica reduction method.

イミドの熱分解法等の方法が知られているが、高β型窒
化ケイ素を得るには金属ケイ素粉末の直接窒化法が最も
容易である。かかる直接窒化法は、一般に水素あるいは
アンモニアガスを混合した窒素ガス雰囲気下で金属ケイ
素粉末を1350〜1500℃の温度で窒化反応を行な
い、窒化ケイ素粉末を得るものであるが、この場合、β
型含有率を上げるために、水素ガス添加量を少なくした
り、窒化温度を上げたり、あるいは仕込量を多くしたり
することが行なわれている。しかし、かかる方法ではβ
型含有率を50%以上とすることは困難である上、仕込
量を多くした場合は未反応金属ケイ素の残留量が多くな
り、収率が低下するという問題がある。
Methods such as thermal decomposition of imide are known, but direct nitriding of metal silicon powder is easiest to obtain high β-type silicon nitride. In this direct nitriding method, metal silicon powder is generally subjected to a nitriding reaction at a temperature of 1350 to 1500°C in a nitrogen gas atmosphere mixed with hydrogen or ammonia gas to obtain silicon nitride powder.
In order to increase the mold content, attempts have been made to reduce the amount of hydrogen gas added, raise the nitriding temperature, or increase the amount charged. However, in such a method, β
It is difficult to increase the mold content to 50% or more, and when the amount charged is increased, the amount of unreacted metal silicon increases, resulting in a lower yield.

かかる問題を解決するため、本発明者はBET比表面積
工〜3 rd / g、酸素含有量0.6重量%以下の
金属ケイ素微粉末を水素を4.5容量%以下又はアンモ
ニアガスを5容量%以下の量で含有する窒素ガス雰囲気
下で生成物中の未反応金属ケイ素が5重量%以下となる
ように窒化することを特徴とする高β型窒化ケイ素微粉
末の製造方法(特願平1−76970号)、あるいはβ
−Si、N、が30重量%以上の窒化ケイ素粉末を工重
量%以上添加した金属ケイ素粉末を直接窒化法により窒
化することを特徴とする高β型窒化ケイ素粉末の製造方
法(特願平1−113269号)等の方法を提案し、高
β型の窒化ケイ素粉末を得ることができた。
In order to solve this problem, the present inventor has developed a method of combining fine metal silicon powder with a BET specific surface area of ~3rd/g and an oxygen content of 0.6% by weight or less, hydrogen of 4.5% by volume or less, or ammonia gas of 5% by volume. % or less in a nitrogen gas atmosphere so that the unreacted metal silicon in the product is 5% by weight or less (Patent Application No. 1-76970) or β
- A method for producing high β-type silicon nitride powder, characterized by directly nitriding metal silicon powder to which silicon nitride powder containing 30% by weight or more of Si and N is added by a direct nitriding method (Patent Application No. -113269), and were able to obtain high β-type silicon nitride powder.

が  しようとする しかし、上記提案では高β型化を達成することができる
ものの、酸素含有量がどうしても0.6重量%以下とな
り、高酸素でかつ高β型の窒化ケイ素粉末を得ることは
困難であった。
However, although the above proposal can achieve high β-type silicon nitride powder, the oxygen content is inevitably less than 0.6% by weight, making it difficult to obtain high-oxygen and high-β silicon nitride powder. Met.

本発明は、上記事情に鑑みなされたもので、高酸素かつ
高β型の窒化ケイ素微粉末及びその製造方法を提供する
ことを目的とする。
The present invention was made in view of the above circumstances, and an object of the present invention is to provide a high-oxygen, high-β type silicon nitride fine powder and a method for producing the same.

るーめの   び 本発明者は、上記目的を達成するため鋭意検討を重ねた
結果、高β型を得られる方法、例えば上述した特願平1
−76970号あるいは特願平1−113269号など
の方法によって得られる酸素含有量が0.6%(重量%
、以下同じ)以下でβ型含有率が50−100%の窒化
ケイ素微粉末をフッ酸を窒化ケイ素100部(重量部、
以下同じ)に対し30部を超えて70部以下の量で含む
フッ酸と硝酸との混酸により処理した場合、上記原料の
窒化ケイ素微粉末の酸素含有量が0.6%以下であって
も、上記フッ酸量範囲で窒化ケイ素の酸素含有量が特異
的に増加し、0.6%を超えて4%以下の酸素含有量を
有し、BET比表面積が1On?/g以上である高酸素
の窒化ケイ素微粉末が得られること、従って、高酸素と
高β型とを兼ね備えた窒化ケイ素粉末が得られることを
見い出し、本発明をなすに至ったものである。
As a result of intensive studies to achieve the above object, the inventors of the present invention have discovered a method for obtaining a high β type, for example, the above-mentioned patent application No.
-76970 or Japanese Patent Application No. 1-113269, the oxygen content is 0.6% (by weight).
, the same applies hereafter), silicon nitride fine powder with a β-type content of 50-100%, hydrofluoric acid, and 100 parts of silicon nitride (parts by weight,
(same hereinafter) is treated with a mixed acid of hydrofluoric acid and nitric acid containing more than 30 parts and less than 70 parts, even if the oxygen content of the silicon nitride fine powder used as the raw material is 0.6% or less. , the oxygen content of silicon nitride increases specifically in the above hydrofluoric acid amount range, has an oxygen content of more than 0.6% and 4% or less, and has a BET specific surface area of 1 On? The inventors have now discovered that it is possible to obtain a silicon nitride fine powder with a high oxygen content of at least 1/g, and therefore a silicon nitride powder that has both a high oxygen content and a high β type, and has thus arrived at the present invention.

従って、本発明は酸素含有量が0.6%を超えて4%以
下、β型含有率が50〜100%、及びBET比表面積
が10m2/g以上である高酸素高β型窒化ケイ素微粉
末、及び酸素含有量が0.6%以下でβ型含有率が50
〜100%の窒化ケイ素微粉末を、フッ酸を窒化ケイ素
100部に対し30部を超えて70部以下の量で含むフ
ッ酸と硝酸との混酸により処理することを特徴とする上
記高酸素高β型窒化ケイ素微粉末の製造方法を提供する
ものである。
Therefore, the present invention provides high-oxygen high-β type silicon nitride fine powder having an oxygen content of more than 0.6% and 4% or less, a β-type content of 50 to 100%, and a BET specific surface area of 10 m2/g or more. , and the oxygen content is 0.6% or less and the β type content is 50
The above-mentioned high oxygen concentration method is characterized in that ~100% silicon nitride fine powder is treated with a mixed acid of hydrofluoric acid and nitric acid containing hydrofluoric acid in an amount of more than 30 parts and less than 70 parts per 100 parts of silicon nitride. A method for producing β-type silicon nitride fine powder is provided.

以下、本発明について更に詳しく説明する。The present invention will be explained in more detail below.

本発明の高酸素高β型窒化ケイ素微粉末は上述したよう
に酸素含有量が0.6%を超えて4%以下、好ましくは
1〜3%、BET比表面積が10g / g以上、好ま
しくは13〜20 rr?/ gである。
As mentioned above, the high oxygen high β type silicon nitride fine powder of the present invention has an oxygen content of more than 0.6% and 4% or less, preferably 1 to 3%, and a BET specific surface area of 10 g / g or more, preferably 13~20rr? / g.

また、平均粒径は1μ以下、特に0.3〜0.6μとす
ることが好ましい。
Further, the average particle diameter is preferably 1 μm or less, particularly 0.3 to 0.6 μm.

かかる高酸素高β型窒化ケイ素微粉末を得る場合、低酸
素高β型の窒化ケイ素微粉末をフッ酸と硝酸との混酸に
より処理する。
In order to obtain such a high-oxygen, high-β type silicon nitride fine powder, the low-oxygen, high-β type silicon nitride fine powder is treated with a mixed acid of hydrofluoric acid and nitric acid.

ここで、低酸素高β型の窒化ケイ素としては、酸素含有
量が0.6%以下、好ましくは0.4%以下でβ型の比
率が50〜100%、好ましくは80−100%の窒化
ケイ素微粉末を使用するものであり、酸素量及びβ型の
比率が上記範囲であればいずれのものも使用できる。こ
の低酸素高β型の窒化ケイ素を得るには、先に本発明者
が提案した方法が有効である。
Here, the low-oxygen, high-β type silicon nitride is a nitride with an oxygen content of 0.6% or less, preferably 0.4% or less, and a β-type ratio of 50 to 100%, preferably 80 to 100%. Any silicon fine powder can be used as long as the amount of oxygen and the ratio of β type are within the above ranges. In order to obtain this low-oxygen, high-β type silicon nitride, the method previously proposed by the present inventor is effective.

即ち、BET比表面積1〜3m2/g、酸素含有量0.
6%以下の金属ケイ素微粉末を水素を4.5容量%以下
又はアンモニアガスを5容量%以下の量で含有する窒素
ガス雰囲気下で生成物中の未反応金属ケイ素が5%以下
となるように窒化する低酸素高β型窒化ケイ素微粉末の
製造方法(特願平1−076970号)、あるいはβ−
8i3N、が30%以上の窒化ケイ素粉末を1%以上添
加した金属ケイ素粉末を直接窒化法により窒化する高β
型窒化ケイ素粉末の製造方法(特願平1−113269
号)などの方法により酸素含有量が0.6%以下、β型
の比率が50〜100%の窒化ケイ素粉末を得ることが
できる。
That is, the BET specific surface area is 1 to 3 m2/g, and the oxygen content is 0.
Under a nitrogen gas atmosphere containing 6% or less of metallic silicon fine powder in an amount of hydrogen of 4.5% by volume or less or ammonia gas in an amount of 5% by volume or less, unreacted metallic silicon in the product becomes 5% or less. A method for producing low-oxygen, high-β-type silicon nitride fine powder that is nitrided to (Patent Application No. 1-076970),
8i3N, is a high-β nitriding method that uses a direct nitriding method to nitride metal silicon powder to which 1% or more of silicon nitride powder with 30% or more is added.
Method for manufacturing molded silicon nitride powder (Patent application No. 1-113269)
Silicon nitride powder having an oxygen content of 0.6% or less and a β type ratio of 50 to 100% can be obtained by a method such as No. 1).

本発明においては、上記低酸素高β型窒化ケイ素粉末を
フッ酸と硝酸の混酸で処理するが、この場合、窒化ケイ
素粉末は鉄メディア等による水あるいは有機溶媒を用い
た湿式微粉砕後のものを用いることが望ましく、具体的
には窒化ケイ素粉末を鉄ボールメディアでアトライタを
用いて水粉枠し、このスラリーをフッ酸、硝酸の混酸で
処理するとよい。
In the present invention, the above-mentioned low-oxygen, high-β silicon nitride powder is treated with a mixed acid of hydrofluoric acid and nitric acid. Specifically, silicon nitride powder is mixed with iron ball media using an attritor, and this slurry is preferably treated with a mixed acid of hydrofluoric acid and nitric acid.

次に、混酸中のフッ酸の量は、窒化ケイ素粉末100部
に対しフッ酸を30部を超えて70部使用する。フッ酸
の量が上記範囲外では窒化ケイ素の酸素含有量が低いも
のとなってしまう。なお、フッ酸としては一般に55部
濃度のフッ化水素酸を使用する。
Next, the amount of hydrofluoric acid in the mixed acid exceeds 30 parts to 70 parts per 100 parts of silicon nitride powder. If the amount of hydrofluoric acid is outside the above range, the oxygen content of silicon nitride will be low. As the hydrofluoric acid, generally 55 parts of hydrofluoric acid is used.

窒化ケイ素粉末を硝酸とフッ酸の混酸で処理する方法は
限定されず1通常の方法を採用できる。
The method of treating silicon nitride powder with a mixed acid of nitric acid and hydrofluoric acid is not limited, and any conventional method can be used.

例えば、鉄メディアによる湿式微粉砕後の窒化ケイ素粉
末を高純度化するための酸処理工程に準じて行なうこと
ができ、硝酸の量もこの酸処理工程に準じ、特に制限さ
れるものではないが、硝酸(比重1.38)は摩耗鉄量
を処理するのに必要な量の1.5倍以上を用い、窒化ケ
イ素100部に対し150〜200部とすることが好ま
しい。
For example, it can be carried out according to the acid treatment process for highly purifying silicon nitride powder after wet pulverization using iron media, and the amount of nitric acid is also according to this acid treatment process, although it is not particularly limited. The amount of nitric acid (specific gravity 1.38) used is at least 1.5 times the amount necessary to treat the amount of worn iron, preferably 150 to 200 parts per 100 parts of silicon nitride.

なお、酸処理は加温して行なうことが好ましく、例えば
60〜80℃とすることができる。また、時間は1〜2
時間で撹拌あるいは静置した状態で行なうことができる
Note that the acid treatment is preferably carried out at a temperature of 60 to 80°C, for example. Also, the time is 1-2
This can be carried out with stirring for a period of time or while standing still.

見豐立処果 以上説明したように、本発明は低酸素高β型の窒化ケイ
素を特定の混酸による湿式法で酸素含有量を増加させた
ことにより、高酸素かつ高β型の窒化ケイ素微粉末を確
実に製造でき、得られる高酸素高β型の窒化ケイ素微粉
末は焼結性などの特性に優れたものである。
As explained above, the present invention increases the oxygen content of low-oxygen, high-beta silicon nitride using a wet method using a specific mixed acid, thereby producing a high-oxygen, high-beta silicon nitride. The powder can be reliably produced, and the resulting high-oxygen, high-β type silicon nitride fine powder has excellent properties such as sinterability.

以下、実施例と比較例を示し、本発明を更に具体的に説
明するが、本発明は下記の実施例に制限されるものでは
ない。なお、以下の例で比表面積はBET法による比表
面積、%は重量%である。
EXAMPLES Hereinafter, the present invention will be explained in more detail by showing examples and comparative examples, but the present invention is not limited to the following examples. In addition, in the following examples, the specific surface area is the specific surface area determined by the BET method, and % is weight %.

〔実施例1,2.比較例1,2〕 比表面積が2〜3 rr? / g、全粒子の粒子径が
10μ以下、酸素含有量が0.6%以下の金属ケイ素粉
末を窒素雰囲気下、最高1470℃の温度で2時間窒化
して第1表に示す窒化ケイ素を得た。
[Example 1, 2. Comparative Examples 1 and 2] Specific surface area is 2 to 3 rr? /g, metal silicon powder with a total particle size of 10μ or less and an oxygen content of 0.6% or less was nitrided in a nitrogen atmosphere at a maximum temperature of 1470°C for 2 hours to obtain the silicon nitride shown in Table 1. Ta.

得られた窒化ケイ素40kgを鉄メディアを用いたアト
ライタで粉砕した後、第2表に示す量のフッ酸と硝酸を
用い、温度75℃で1時間浸漬処理した。処理後の窒化
ケイ素微粉末について比表面積、酸素含有量などの特性
を測定した。結果を第2表に示す。
After pulverizing 40 kg of the obtained silicon nitride with an attritor using iron media, it was immersed in hydrofluoric acid and nitric acid in the amounts shown in Table 2 at a temperature of 75° C. for 1 hour. Characteristics such as specific surface area and oxygen content of the silicon nitride fine powder after treatment were measured. The results are shown in Table 2.

なお、酸素含有量の分析はEMGA2800(I場製作
所製)を用いて測定した。
The oxygen content was analyzed using EMGA2800 (manufactured by Iba Seisakusho).

第2表の結果より、本発明に従ってフッ酸を窒化ケイ素
100部に対し30部を超えて70部以下の範囲で用い
ることにより、窒化ケイ素の酸素含有量を特異的に増加
させることが認められる。
From the results in Table 2, it is recognized that the oxygen content of silicon nitride can be specifically increased by using hydrofluoric acid in a range of more than 30 parts and less than 70 parts per 100 parts of silicon nitride according to the present invention. .

Claims (1)

【特許請求の範囲】 1、酸素含有量が0.6重量%を超えて4重量%以下、
β型含有率が50〜100重量%、及びBET比表面積
が10m^2/g以上である高酸素高β型窒化ケイ素微
粉末。 2、酸素含有量が0.6重量%以下でβ型含有率が50
〜100重量%の窒化ケイ素微粉末を、フッ酸を窒化ケ
イ素100重量部に対し30重量部を超えて70重量部
以下の量で含むフッ酸と硝酸との混酸により処理するこ
とを特徴とする請求項1記載の高酸素高β型窒化ケイ素
微粉末の製造方法。
[Claims] 1. Oxygen content is more than 0.6% by weight and less than 4% by weight,
A high-oxygen, high-β type silicon nitride fine powder having a β type content of 50 to 100% by weight and a BET specific surface area of 10 m^2/g or more. 2. Oxygen content is 0.6% by weight or less and β type content is 50%.
~100% by weight of silicon nitride fine powder is treated with a mixed acid of hydrofluoric acid and nitric acid containing hydrofluoric acid in an amount of more than 30 parts by weight and less than 70 parts by weight per 100 parts by weight of silicon nitride. A method for producing a high-oxygen, high-β type silicon nitride fine powder according to claim 1.
JP17987389A 1989-07-12 1989-07-12 High-oxygen high beta-type silicon nitride fine powder and production thereof Pending JPH0345506A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17987389A JPH0345506A (en) 1989-07-12 1989-07-12 High-oxygen high beta-type silicon nitride fine powder and production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17987389A JPH0345506A (en) 1989-07-12 1989-07-12 High-oxygen high beta-type silicon nitride fine powder and production thereof

Publications (1)

Publication Number Publication Date
JPH0345506A true JPH0345506A (en) 1991-02-27

Family

ID=16073395

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17987389A Pending JPH0345506A (en) 1989-07-12 1989-07-12 High-oxygen high beta-type silicon nitride fine powder and production thereof

Country Status (1)

Country Link
JP (1) JPH0345506A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2019167879A1 (en) * 2018-02-28 2021-02-12 株式会社トクヤマ Method for manufacturing silicon nitride powder

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2019167879A1 (en) * 2018-02-28 2021-02-12 株式会社トクヤマ Method for manufacturing silicon nitride powder

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